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分立IGBT

共 33,694 个型号

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02

分立IGBT系列产品

(5)

DIIBSS84 transistor

Compact P/N-channel MOSFET transistors for low-power electronic circuits

DIIDMN2004 transistor

N-channel MOSFET transistors in compact SMD packages for low-power applications

DIIDMP2004 transistor

P-channel MOSFET transistors in compact SMD packages

DIIZVN4206 transistor

N-channel MOSFET transistors for low-power electronic circuits

DIIZXM61 transistor

Compact N and P-channel MOSFET transistors in SOT-23 packages

03

分立IGBT - 型号列表

共 35,631 个型号

漏极电流（Idss）@ Vds（Vgs=0）

额定功率

导通电阻 Rds(on) (最大) @ Id, Vgs

标准包装数量

封装形式

首抽头延迟

其他名称

峰值脉冲电流（10/1000µs）

供应商器件封装

阈值电压

集电极-发射极饱和电压（最大）@ Vge, Ic

导通电阻（最大）

工厂包装数量

Vgs(th)（最大）@ Id

击穿电压

导通电阻 RDS(On)

最大功耗

连续漏极电流（Id）@ 25°C

最大功率

输入电容（Ciss）（最大）@ Vds

包装方式

供电电压

开关时间（Ton, Toff）（最大）

宽度

尺寸/外形

工作温度

最大额定电流

海关税号

最大栅源电压 Vgs

漏电流（最大）

峰值脉冲电流（8/20µs）

漏源电压（Vdss）

栅极触发电压 Vgt (最大)

重量

类型

总长度

包装数量

外壳尺寸-插件

下降时间

上升时间（典型）

RoHS

冷却的封装

极性

标准封装名称

触点电压（最大）

最小输入电压

零件号别名

产品类别

关断延迟时间

电流传输比（最大）

高度

长度

安装类型

配置

结工作温度

引脚样式

下降时间（典型）

传播延迟（最大）

每端口功率（瓦）

供电电压 (Vcc/Vdd)

匹配码

栅极电荷（Qg）（最大）@ Vgs

浪涌电流

钳位电压

最小供电电压

输入类型

SVHC

FET特性

开通延迟时间

晶体管类型

电流传输比（最小）

端接方式

安装样式

材料表面处理

位数

通道类型

卡标准

印刷电路板数量

最小起订量

单位包装

深度

SMD标记

峰值脉冲功率

反向漏电流 @ Vr

系列

应用

端口方向

机械寿命

Td（开/关）@ 25°C

集电极电流（Ic）（最大）

集电极截止电流（最大）

集电极脉冲电流 (Icm)

测试条件

制造商零件编号库存价格RoHS包装方式封装形式工作温度标准包装数量安装类型集电极-发射极饱和电压（最大）@ Vge, Ic供应商器件封装产品类别配置工厂包装数量额定功率晶体管类型导通电阻 Rds(on) (最大) @ Id, Vgs漏极电流（Idss）@ Vds（Vgs=0）击穿电压位数最大功率首抽头延迟峰值脉冲电流（10/1000µs）安装样式类型最大栅源电压 Vgs元件数量最大功耗极性通道类型其他名称SVHC海关税号FET类型FET特性Vgs(th)（最大）@ Id阈值电压导通电阻 RDS(On)导通电阻（最大）漏源电压（Vdss）栅极触发电压 Vgt (最大)输入电容（Ciss）（最大）@ Vds连续漏极电流（Id）@ 25°C重量引脚数材料表面处理标准封装名称引脚样式包装数量宽度冷却的封装尺寸/外形欧盟RoHS机械寿命开关时间（Ton, Toff）（最大）总长度抗辐射加固噪声系数额定输出功率最大频率漏电流（最大）Vce饱和电压（最大）@ Ib, Ic外壳尺寸-插件印刷电路板数量供电电压高度长度卡标准结工作温度最大额定电流峰值脉冲电流（8/20µs）端接方式触点电压（最大）下降时间上升时间（典型）开通延迟时间关断延迟时间电流传输比（最大）极化最小起订量单位包装最小输入电压零件号别名电流传输比（最小）无铅定义下降时间（典型）传播延迟（最大）每端口功率（瓦）供电电压 (Vcc/Vdd)匹配码标准交期深度栅极电荷（Qg）（最大）@ Vgs浪涌电流峰值脉冲功率钳位电压电源线保护最小供电电压应用输入类型胶带最大宽度SMD标记测试温度已删除通道数输出电流反向漏电流 @ Vr系列端口方向Td（开/关）@ 25°C集电极电流（Ic）（最大）集电极截止电流（最大）集电极脉冲电流 (Icm)测试条件单向通道数连接器类型 - 电压输入汽车级插片宽度颜色间距触头类型外壳颜色连接器类型紧固类型排数壳体材料触点数接触件端接备注连接器性别双向通道数电容 @ 频率端接样式IGBT类型栅极电荷开关能量反向恢复时间（trr）能量输出数量峰值输出电流Vce饱和电压（最大）商标名ESD保护
2N7000G
7
2N7000G

Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk MOSFET N-CH 60V 200MA TO-92 2N7000G, N-channel MOSFET Transistor 0.2A 60V, 3-Pin TO-92 MOSFET 60V 200mA N-Channel MOSFET, N, 60V, 0.2A, TO-92 MOSFET;N-Ch;VDSS60VDC;RDS(ON)5Ohms;ID200mA;TO-92(TO-226);PD350mW;-55degc ON Semiconductor , N沟道 MOSFET, 200 mA, Vds=60 V, 3针 TO-92封装

on semiconductor

39509¥0.50Lead free / RoHS CompliantBulk3TO-92-55 to 150 °CBoxed, BulkThrough Hole60 VTO-92-3MOSFETSingle10000.35 WN-Channel5000@10V mOhm200 mA60 V3350mW10 ns0.2 AThrough HoleSmall Signal±20 V10.35 WNEnhancement-:No SVHC (20-Jun-2013)85331000MOSFET N-Channel, Metal OxideStandard3V @ 1mA:3V:5ohm5 Ω60V+/- 20 V60pF @ 25V200mA (Ta)0.27:3:MSL 1 - Unlimited---4.19mmTO-925.2 x 4.19 x 5.33mm--10(Max) ns-NoNot Required dBNot Required dBNot Required MHz0.2 ANot Required %---5.33mm5.2mmSmall Signal+150°C-:500mA:Through Hole---10ns10ns100MicromhosN-Channel----0.0001 S-------------------------------:S(1)G(2)D(3)---------------------------
2N7002,215
4
2N7002,215

Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R MOSFET N-CH 60V 300MA SOT-23 2N7002,215, N-channel MOSFET Transistor 0.3A 60V, 3-Pin TO-236AB MOSFET, N CH, 60V, 300MA, SOT-23-3 NXP N沟道 Si MOSFET , 300 mA, Vds=60 V, 3针 TO-236AB封装

nxp semiconductors

-Lead free / RoHS CompliantTape and Reel3TO-236AB-65 to 150 °CCut TapeSurface Mount60 VSOT-23-3-Single-0.83 W:N Channel5000@10V mOhm0.3 A60 V3830mW-0.3 A-Power MOSFET30 V10.83 WNEnhancement568-1369-1:No SVHC (20-Jun-2013)85412900MOSFET N-Channel, Metal OxideLogic Level Gate2.5V @ 250µA:2V:2.8ohm5 Ω60V-50pF @ 10V300mA (Ta)0.00001:3:MSL 1 - UnlimitedSOT-23Gull-wingTO-236AB1.4mmTO-236AB3 x 1.4 x 1mmCompliant--3(Max)NoNot Required dBNot Required dBNot Required MHz0.3 ANot Required %1(Max)3-1mm3mmPower MOSFET---------------------------------------------------------------------------
2N7002-7-F
9
2N7002-7-F

Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R N-CH MOS 0,210A 60V SOT23 MOSFET N-CH 60V 115MA SOT23-3 MOSFET 60V 200mW MOSFET, N CH, 60V, 0.115A, SOT23 N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET N, 60 V 0.115 A 0.3 W SOT-23, 2N7002-7-F, Diodes Incorporated

diodes, inc

118291¥0.10Lead free / RoHS CompliantTape & Reel (TR)3SOT-23-55 to 150 °CTape & ReelSurface Mount70 VSOT-23-3MOSFETSingle30000.3 WN-Channel7500@5V mOhm0.210A60 V-300mW7.6 ns0.21 ASMD/SMT-±20 V-:300mWN-CHANNELEnhancement2N7002-FDICT:No SVHC (16-Dec-2013)85412100MOSFET N-Channel, Metal OxideStandard2.5V @ 250µA:2.5V:13.5ohm-60V+/- 20 V50pF @ 25V115mA (Ta)0.000008:3:MSL 1 - Unlimited--------2.8 ns--------------:800mA-:SMD:60V------30003000--0.08 SRoHS-conform5.6 ns3 ns0.370W60V2N7002-7-F11 weeks-------------------------AEC-Q(101)--------------------------
2N7002LT1G
10
2N7002LT1G

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R MOSFET N-CH 60V 115MA SOT-23 2N7002LT1G, N-channel MOSFET Transistor 0.115A 60V, 3-Pin SOT-23 MOSFET, N, SOT-23 N CHANNEL MOSFET, 60V, 115mA SOT-23, FULL REEL MOSFET;N-Ch;VDSS60VDC;RDS(ON)7.5Ohms;ID+/-115mA;SOT-23(TO-236);PD225mW;-55 ON Semiconductor , N沟道 MOSFET, 115 mA, Vds=60 V, 3针 SOT-23封装 MOSFET 60V 115mA N-Channel

on semiconductor

23066¥0.09Lead free / RoHS CompliantTape and Reel3SOT-23-55 to 150 °CTape & ReelSurface Mount60VSOT-23-3 (TO-236)-Single--:N Channel7500@10V mOhm±115mA60 V3225mW40(Max) ns0.115 A--±20 V10.3 W-Enhancement2N7002LT1GOSTR:No SVHC (20-Jun-2013)85412900MOSFET N-Channel, Metal OxideLogic Level Gate2.5V @ 250µA:2.5V:7.5ohm7.5 Ω60V-50pF @ 25V115mA (Tc)0.000033:3:MSL 1 - UnlimitedSOT-23Gull-wingSOT-231.3mmSOT-232.9 x 1.3 x 0.94mmCompliant-20(Max) ns2.9------0.943-1.5V0.94mm2.9mmSmall Signal+150°C-:800mA-:60V--20ns40ns80MillimhosN-Channel------------:2.5mm--------:8mm:702:25°C----------------------------------------
STW20NM60
3
STW20NM60

Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube MOSFET N-CH 600V 20A TO-247 MOSFET N-Ch 600 Volt 20 Amp MOSFET, N CH, 600V, 20A, TO-247

stmicroelectronics

270¥23.28Lead free / RoHS CompliantTube3TO-247-65 to 150 °CRail / TubeThrough Hole600 VTO-247-3MOSFETSingle30192 WN-Channel290@10V mOhm20 A600 V3192W42 ns20 AThrough HolePower MOSFET±30 V1:192WNEnhancement497-3263-5:No SVHC (20-Jun-2013)85423300MOSFET N-Channel, Metal OxideStandard5V @ 250µA:4V:250mohm0.29 ohm600V+/- 30 V1500pF @ 25V20A (Tc)0.0002:3:-TO-247Through HoleTO-2475.15(Max)TO-247-Compliant-25 ns15.75(Max)NoNot Required dBNot Required dBNot Required MHz20 ANot Required %20.15(Max)3-----:20A-:Through Hole:600V11 ns20 ns----------11 ns20 ns-----54nC @ 10V----------Compliant-------------Tab-------------------------
0351550212
0351550212

Conn Housing F 2 POS 2.5mm Crimp ST Cable Mount Bag CONN FEMALE HOUSING 2POS RED

molex

10¥0.86Lead free / RoHS CompliantBag--BulkStraight----------2----Housing---------------------------Compliant--7.5-------------3/Contact-----------250VDC|250VAC---------10.5--------------------------Red2.5 mmFemale SocketNaturalReceptacleLatch Lock1Polybutylene Terephthalate2CrimpContacts Not ProvidedF-------------
1SMB20CAT3
5
1SMB20CAT3

TVS Diodes - Transient Voltage Suppressors 20V 600W Diode TVS Single Bi-Dir 20V 600W 2-Pin SMB T/R TVS DIODE 20VWM 32.4VC SMB

ON Semiconductor

2150¥1.15RoHS CompliantReelDO-214AA- 65 C2,500Surface Mount-SMBTVS Diodes - Transient Voltage Suppressors-2500----22.2 V2----Zener-1-Bidirectional-1SMB20CAT3OSTR---------------DO-214-AAJ-LeadSMB3.81(Max)-3.81(Max) mm W x 4.57(Max) mm L-Obsolete-4.57(Max)------2.41(Max)220V----65 to 150-18.5----------20-----------18.5 A600 W32.4 VNo20 VGeneral Purpose-----1 Channel151SMB10CAT3GBi-Directional---------------------1425pF @ 1MHzSMD/SMT----------
IKU06N60R
IKU06N60R

IGBT Transistors 600V Trenchstop RC Hard SW App, IGBT IGBT 600V 12A 100W TO251-3

Infineon Technologies

1500¥3.89RoHS CompliantTubeTO-251-3 Short Leads, IPak, TO-251AA-1,500Through Hole2.1V @ 15V, 6APG-TO251-3---------100W--------------------------------End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.----------600V-----------------IKU06N60RBKMA1 IKU06N60RXK SP000623352---------48nC------Standard-------TrenchStop®-12ns/127ns12A18A18A400V, 6A, 23 Ohm, 15V-------------------Trench48nC330µJ68ns330µJ-----
1N6278HE3/54
4
1N6278HE3/54

TVS Diodes - Transient Voltage Suppressors 1500W 20V 10% Unidir TVS DIODE 16.2VWM 29.1VC 1.5KE

Vishay Semiconductors

-RoHS Compliant By ExemptionReelDO-201AA- 55 C1,400Through Hole-1.5KETVS Diodes - Transient Voltage Suppressors-1400----18 V---51.5A-Zener---Unidirectional----------------------5.3 (Max) mm W x 9.5 (Max) mm L-Obsolete----------16.2V----------------------------51.5 A1500 W29.1 VNo16.2 VTelecom---------------1----------------------------
BUK107-50DL,115
2
BUK107-50DL,115

MOSFET TAPE-7 TOPFET TOPFET LOGIC LVL 50V SOT-223

NXP Semiconductors

-RoHS CompliantReelSOT-223+ 150 C1,000Surface Mount50 VSC-73MOSFETSingle Dual Drain10001800 mWN-Channel200 mOhms0.7 A---3000 ns-SMD/SMTLow Side-------------150 mOhm--------------Obsolete-------------------30000 ns30000 ns-------BUK107-50DL T/R----------------Non-Inverting--------------------------------------11.1A---
MGP15N40CL
2
MGP15N40CL

IGBT Transistors 15A 410V Ignition Trans IGBT Chip N-CH 440V 15A 3-Pin(3+Tab) TO-220AB Rail IGBT 440V 15A 150W TO220AB

ON Semiconductor

-NoTubeTO-220-3+ 150 C50Through Hole2.25V @ 4V, 15ATO-220ABIGBT TransistorsSingle50150 W----3150W--Through Hole-22 V-150000-NMGP15N40CLOS---------------TO-220Through HoleTO-220AB----Obsolete----------440 V----------------440----------150 W------Logic----------/4µs15 A1550A300V, 6.5A, 1 kOhm--------------------------10 V--
SI6866DQ-T1
SI6866DQ-T1

MOSFET 20V 5.8A

Vishay/Siliconix

-NoReelTSSOP-8+ 150 C--20 V-MOSFETDual30001.2 WN-Channel30 mOhms5.8 A---41 ns-SMD/SMT----------------+/- 12 V------------Obsolete-------------------37 ns37 ns----10--------------------------------------------------------------
BSN20,215
4
BSN20,215

Trans MOSFET N-CH 50V 0.173A 3-Pin TO-236AB T/R Trans MOSFET N-CH 50V 0.173A 3-Pin TO-236AB MOSFET N-CH 50V 173MA SOT-23 BSN20,215, N-channel MOSFET Transistor 0.173A 50V, 3-Pin TO-236AB MOSFET N-CH TRNCH 50V 173MA MOSFET, N CH, 50V, 0.173A, SOT23 NXP N沟道 MOSFET 晶体管 , 170 mA, Vds=50 V, 3针 TO-236AB封装

nxp semiconductors

-Lead free / RoHS CompliantTape and Reel3TO-236AB-65 to 150 °CTape & ReelSurface Mount50 VSOT-23-3MOSFETSingle3000830 mWN-Channel15000@10V mOhm0.173 A50 V3830mW-0.173 ASMD/SMT-±20 V10.83 W-Enhancement568-1658-1:No SVHC (20-Jun-2013)85412100MOSFET N-Channel, Metal OxideLogic Level Gate1V @ 1mA:1V:2.8ohm15 Ω50V+/- 20 V25pF @ 10V173mA (Ta)0.000033:3:MSL 1 - UnlimitedSOT-23Gull-wingTO-236AB1.4mmTO-236AB3 x 1.4 x 1mmCompliant--3(Max)------1(Max)3-1mm3mmPower MOSFET--------------BSN20 T/R------------------------------------------------------------
BSS123LT1G
7
BSS123LT1G

Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R MOSFET N-CH 100V 170MA SOT-23 BSS123LT1G, N-channel MOSFET Transistor 0.17A 100V, 3-Pin SOT-23 MOSFET 100V 170mA N-Channel MOSFET, N CH, 100V, 170MA, SOT-23-3 MOSFET, N, SOT-23 MOSFET,Power;N-Ch;VDSS100VDC;RDS(ON)5Ohms;ID0.17A;SOT-23(TO-236);PD225mW ON Semiconductor , N沟道 MOSFET, 170 mA, Vds=100 V, 3针 SOT-23封装

on semiconductor

17694¥0.17Lead free / RoHS CompliantTape and Reel3SOT-23-55 to 150 °CTape & ReelSurface Mount100 VSOT-23-3 (TO-236)MOSFETSingle30000.225 WN-Channel6000@10V mOhm170 mA100 V3225mW40 ns0.17 ASMD/SMTPower MOSFET±20 V10.225 WNEnhancementBSS123LT1GOSTR:No SVHC (16-Dec-2013)85412900MOSFET N-Channel, Metal OxideLogic Level Gate2.8V @ 1mA:20V:5ohm6 Ω100V+/- 20 V20pF @ 25V170mA (Ta)0.000033:3:MSL 1 - UnlimitedSOT-23Gull-wingSOT-231.3mmSOT-232.9 x 1.3 x 0.94mmCompliant-20 ns2.9NoNot Required dBNot Required dBNot Required MHz0.17 ANot Required %0.9431.3V0.94mm2.9mmPower MOSFET+150°C:170mA:680mA-:100V--20ns40ns80MillimhosN-Channel----0.08 S-------:2.5mm--------:8mm:SA:25°C----------------------------------------
BSS138-7-F
8
BSS138-7-F

Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R N-CH MOS-FET 0,20A 50V SOT23 MOSFET N-CH 50V 200MA SOT23-3 MOSFET 300mW 50V DSS MOSFET, N CH, 50V, 0.2A, SOT23-3 MOSFET N, 50 V 0.2 A 0.2 W SOT-23, BSS138-7-F, Diodes Incorporated

diodes, inc

28945¥0.24Lead free / RoHS CompliantTape & Reel (TR)3SOT-23-55 to 150 °CTape & ReelSurface Mount50 VSOT-23-3MOSFETSingle3000300 mWN-Channel3500@10V mOhm0.2A50 V3300mW20 ns0.2 ASMD/SMTSmall Signal±20 V1:300mWN-CHANNELEnhancementBSS138-FDICT:No SVHC (16-Dec-2013)85412100MOSFET N-Channel, Metal OxideLogic Level Gate1.5V @ 250µA:1.2V:1.4ohm3.5 ohm50V+/- 20 V50pF @ 10V200mA (Ta)0.000008:3:MSL 1 - Unlimited----SOT-23---20(Max) ns-NoNot Required dBNot Required dBNot Required MHz0.2 ANot Required %-------:200mA---------30003000---RoHS-conform--0.3W50VBSS13811 weeks----------------------------------------------------
BUK9675-100A /T3
BUK9675-100A /T3

MOSFET TAPE13 PWR-MOS

NXP Semiconductors

-RoHS CompliantReel - 13 inSOT-404+ 175 C--100 V-MOSFETSingle80098 WN-Channel0.072 Ohms23 A---58 ns-SMD/SMT----------------+/- 15 V------------Obsolete-------------------57 ns120 ns-------BUK9675-100A,118------------------------------------------------------------
BSS138LT1G
8
BSS138LT1G

Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R MOSFET N-CH 50V 200MA SOT-23 BSS138LT1G, N-channel MOSFET Transistor 0.2A 50V, 3-Pin SOT-23 MOSFET, N CH, 50V, 200MA, SOT-23-3 MOSFET, N, 50V, 0.2A, SOT-23 MOSFET,Power;N-Ch;VDSS50VDC;RDS(ON)3.5Ohms;ID200mA;SOT-23(TO-236);PD225mW ON Semiconductor , N沟道 MOSFET, 200 mA, Vds=50 V, 3针 SOT-23封装 MOSFET 50V 200mA N-Channel

on semiconductor

169161¥0.17Lead free / RoHS CompliantTape and Reel3SOT-23-55 to 150 °CTape & ReelSurface Mount50 VSOT-23-3 (TO-236)-Single-0.225 W:N Channel3500@5V mOhm0.2 A50 V3225mW20 ns0.2 A-Power MOSFET±20 V10.225 WNEnhancementBSS138LT1GOSTR:No SVHC (16-Dec-2013)85411000MOSFET N-Channel, Metal OxideLogic Level Gate1.5V @ 1mA:1.5V:3.5ohm3.5 Ω50V-50pF @ 25V200mA (Ta)0.000033:3:MSL 1 - UnlimitedSOT-23Gull-wingSOT-231.3mmSOT-232.9 x 1.3 x 0.94mmCompliant-20(Max) ns-NoNot Required dBNot Required dBNot Required MHz0.2 ANot Required %---0.94mm2.9mmPower MOSFET+150°C--:SMD---20ns20ns100MillimhosN-Channel----------------------------------------------------------------
DMN2004K-7
7
DMN2004K-7

Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R N-CH MOS-FET+ESD 20V 1,5A SOT23 MOSFET N-CH 20V 540MA SOT23-3 MOSFET 20V 540mA MOSFET, N CH, 20V, 0.54A, SOT-23

diodes, inc

15836¥0.37Lead free / RoHS CompliantTape and Reel3SOT-23-65 to 150 °CCut Tape, Tape & ReelSurface Mount20 VSOT-23-3MOSFETSingle3000350 mWN-Channel550@4.5V mOhm1.5A20 V3350mW59.4 ns0.63 ASMD/SMTSmall Signal±8 V1:350mWN-CHANNELEnhancementDMN2004KDICT:No SVHC (16-Dec-2013)85412100MOSFET N-Channel, Metal OxideLogic Level Gate1V @ 250µA:1.6V:550mohm0.55 ohm20V+/- 8 V150pF @ 16V630mA (Ta)0.000008:3:MSL 1 - UnlimitedSOT-23Gull-wingSOT-231.3SOT-23-Compliant-5.7 ns2.9NoNot Required dBNot Required dBNot Required MHz0.63 ANot Required %13-----:540mA-:SMD:20V------30003000---RoHS-conform37.6 ns8.4 ns0.35W20VDMN2004K11 weeks------------Compliant---------------------------------------
SMBJ9.0-E3/5B
3
SMBJ9.0-E3/5B

TVS Diodes - Transient Voltage Suppressors 600W 9.0V 10% Uni Diode TVS Single Uni-Dir 9V 600W 2-Pin SMB T/R TVS DIODE 9VWM 16.9VC SMB

Vishay Semiconductors

-RoHS Compliant By ExemptionReelDO-214AA- 55 C3,200Surface Mount-DO-214AA (SMB)TVS Diodes - Transient Voltage Suppressors-3200----10 V2--35.5A-Zener-1-Unidirectional-----------------DO-214-AAJ-LeadSMB--3.94(Max) mm W x 4.57(Max) mm LCompliantObsolete----------9V----55 to 150-35.5----------9-----------100 A600 W16.9 VNo9 VTelecom-----1 Channel110-Uni-Directional-----1--------------------------TRANSZORBNo
SSP1N60B_Q
SSP1N60B_Q

MOSFET N-Ch/600V/1a/12Ohm

onsemi

-NoTubeTO-220+ 150 C--600 V-MOSFETSingle-34 WN-Channel12 Ohms1 A---25 ns-Through Hole----------------+/- 30 V------------Obsolete-------------------35 ns45 ns--------------------------------------------------------------------
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