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CSD17308Q3
| 制造商 | Texas Instruments Incorporated |
| 描述 | Trans MOSFET N-CH 30V 47A 8-Pin SON EP T/R MOSFET N-CH 30V 47A 8SON MOSFET 30V NCh NexFET Pwr MOSFET MOSFET, N CH, 30V, 47A, 8SON 30V N-Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 47 A, Vds=30 V, 8针 SON封装 |
| 分类 |
商业参数
| 商标名 | NexFET | 其他名称 | 296-27210-2 |
| 产品类别 | MOSFET | 标准包装数量 | Cut Tape |
| 工厂包装数量 | 2500 | ||
合规参数
| RoHS | Contains lead / RoHS compliant by exemption | SVHC | :No SVHC (16-Dec-2013) |
| 欧盟RoHS | Compliant | 海关税号 | 85412900 |
| 零件状态 | ACTIVE | 抗辐射加固 | No |
电气参数
| FET类型 | MOSFET N-Channel, Metal Oxide | 下降时间 | 2.3 ns |
| 最大栅源电压 Vgs | 10 V | FET特性 | Standard |
| 栅极电荷 | 3.9 nC | 最大功率 | 2.7W |
| 额定功率 | 2.7 W | 下降时间（典型） | 2.3 ns |
| 上升时间（典型） | 5.7 ns | 晶体管类型 | N-Channel |
| 首抽头延迟 | 9.9 ns | 元件数量 | 1 |
| Vgs(th)（最大）@ Id | 1.8V @ 250µA | 击穿电压 | 30 V |
| 阈值电压 | :1.3V | 最大额定电流 | Catalog |
| 导通电阻 RDS(On) | :0.0094ohm | 导通电阻 Rds(on) (最大) @ Id, Vgs | 10.3@8V mOhm |
| 最大功耗 | :2.7W | 传播延迟（最大） | 5.7 ns |
| 集电极-发射极饱和电压（最大）@ Vge, Ic | 30 V | 逻辑电压 - VIL, VIH | Yes |
| 导通电阻（最大） | 10.3@8V | 电流传输比（最小） | 37 S |
| 栅极电荷（Qg）（最大）@ Vgs | 5.1nC @ 4.5V | 峰值脉冲电流（8/20µs） | 78 |
| 开关时间（Ton, Toff）（最大） | 4.5 ns | 漏源电压（Vdss） | 30V |
| 峰值脉冲电流（10/1000µs） | 47 A | 栅极触发电压 Vgt (最大) | 10 V |
| 漏极电流（Idss）@ Vds（Vgs=0） | 47 A | 输入电容（Ciss）（最大）@ Vds | 700pF @ 15V |
| 连续漏极电流（Id）@ 25°C | 13A (Ta), 47A (Tc) | ||
机械参数
| 宽度 | 3.3 | 重量 | 0.0035 |
| 包装方式 | Tape and Reel | 安装类型 | Surface Mount |
| 安装样式 | SMD/SMT | 引脚数 | :8 |
| 封装形式 | 8SON EP | 冷却的封装 | SON EP |
| 材料表面处理 | :MSL 1 - Unlimited | 总长度 | 3.3 |
| 包装数量 | SON EP | 位数 | 8 |
| 外壳尺寸-插件 | 1 | 供应商器件封装 | 8-SON |
产品信息
| 类型 | Power MOSFET | 系列 | CSD17308Q3 |
| 极性 | N | 软件 | SLPS262A |
| 通道类型 | Enhancement | 配置 | Single |
| 图案编号 | Y | 使用的IC/零件 | View |
| 其他规格 | 0.8 | 印刷电路板数量 | 8 |
环境参数
| 测试温度 | -55 to 150 | 工作温度 | -55 to 150 °C |
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