Vishay Intertechnology, Inc.- MOSFET模块

Vishay Intertechnology, Inc. 于1962年由 Felix Zandman 博士创立，总部位于美国宾夕法尼亚州马尔文市。公司是全球最大的分立半导体与被动电子元器件制造商之一，核心业务涵盖二极管、MOSFET、光电元件、电阻器、电感器和电容器的设计、制造与销售。在分立半导体领域，重点产品线包括 TrenchFET® MOSFET、肖特基二极管，以及用于传感与遥控的红外发射/探测器系列。被动元件方面，Vishay 提供业界领先的 IHLP® 大电流功率电感器、用于精密电流检测的 Power Metal Strip® 电阻器，以及 Tantamount® 品牌下的钽电容和 MLCC 等系列。产品广泛应用于工业、电源、汽车、计算、消费电子、通信、军事、航空和医疗等终端市场。Vishay 在功率分立器件和无源元件领域占据全球领先地位，以持续的技术创新和丰富的产品组合著称。通过“一站式”服务模式和成功的收购战略，公司能够为客户提供完整的器件解决方案。其制造设施遍布美洲、欧洲和亚洲，并是 Digi-Key 等分销商的重要合作伙伴，彰显了强大的全球供应能力。

MOSFET模块 - 型号列表

共 352 个型号

制造商零件编号	库存	价格	RoHS	包装方式	封装形式	标准包装数量	FET类型	FET特性	最大功率	Vgs(th)（最大）@ Id	导通电阻 Rds(on) (最大) @ Id, Vgs	栅极电荷（Qg）（最大）@ Vgs	漏源电压（Vdss）	输入电容（Ciss）（最大）@ Vds	连续漏极电流（Id）@ 25°C	安装类型	供应商器件封装	系列	产品类别	工厂包装数量	晶体管类型	工作温度	技术	安装样式	漏极电流（Idss）@ Vds（Vgs=0）	商标名	制造商全称	首抽头延迟	集电极-发射极饱和电压（最大）@ Vge, Ic	配置	栅极触发电压 Vgt (最大)	额定功率	栅极电荷	电流传输比（最小）	下降时间	上升时间（典型）	宽度	高度	长度	最小起订量	单位包装	其他名称	海关税号	最大栅源电压 Vgs	元件数量	击穿电压	阈值电压	导通电阻 RDS(On)	最大功耗	导通电阻（最大）	开关时间（Ton, Toff）（最大）	峰值脉冲电流（10/1000µs）	重量	引脚数	冷却的封装	材料表面处理	尺寸/外形	位数	通道类型	卡标准	标准封装名称	欧盟RoHS	插片宽度	总长度	包装数量	外壳尺寸-插件	印刷电路板数量	零件号别名	引脚样式	供电电压	类型	机械寿命	汽车级	无铅定义	逻辑类型	每端口功率（瓦）	供电电压 (Vcc/Vdd)	匹配码	标准交期	热阻 @ GPM
VSKC71/12P Discrete Semiconductor Modules 1200 Volt 80 Amp Vishay Semiconductors	-		RoHS Compliant	Bulk	ADD-A-PAK	-	-	-	-	-	-	-	-	-	-	-	-	-	Discrete Semiconductor Modules	10	-	-	-	Screw	-	-	-	-	-	-	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5 V	Switching Diode	Obsolete	-	-	-	-	-	-	-	-
4 SIHB24N65E-E3 MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS MOSFET N-CH 650V 24A D2PAK MOSFET N-Channel 650V 24A D2PAK MOSFET, N CH, 650V, 24A, D2PAK Vishay / Siliconix	910	1: ¥40.528	Lead free / RoHS Compliant	Tube	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	145 mOhm @ 12A, 10V	122nC @ 10V	650V	2740pF @ 100V	24A (Tc)	Surface Mount	D²PAK	E	MOSFET	-	N-Channel	+150 °C	-	SMD/SMT	24 A	-	-	70 ns	650 V	Single	+/- 20 V	250 W	81 nC	7.1 S	-	-	9.65mm	4.83mm	10.67mm	1	0	SIHB24N65EE3	85044090	±20 V	1	650 V	:2V	:0.12ohm	250 W	0.145 Ω	24 ns	24 A	0.00143	:3	D2PAK	:MSL 1 - Unlimited	10.67 x 9.65 x 4.83mm	3	Enhancement	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SIHG22N60E-E3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC MOSFET N-CH 600V 21A TO247AC MOSFET N-Channel 600V 21A TO247AC MOSFET, N CH, 600V, 21A, TO-247AC Vishay E Series 系列 N沟道 MOSFET 晶体管 , 21 A, Vds=600 V, 3针 TO-247AC封装 Vishay / Siliconix	1066	1: ¥30.464	Lead free / RoHS Compliant	Tube	TO-247-3	500	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	180 mOhm @ 11A, 10V	86nC @ 10V	600V	1920pF @ 100V	21A (Tc)	Through Hole	TO-247AC	E	MOSFET	-	N-Channel	+150 °C	-	Through Hole	21 A	-	-	59 ns	600 V	Single	+/- 20 V	227 W	57 nC	6.4 S	-	-	5.31mm	20.7mm	15.87mm	1	0	SIHG22N60EE3	85044090	±20 V	1	600 V	:2V	:0.15ohm	227 W	0.18 Ω	18 ns	21 A	0.006	:3	TO247AC	:MSL 1 - Unlimited	15.87 x 5.31 x 20.7mm	3	N	Power MOSFET	TO-247	Compliant	Tab	15.87(Max)	TO-247AC	20.7(Max)	3	-	Through Hole	-	-	-	-	-	-	-	-	-	-	-
4 SIHP24N65E-E3 MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB MOSFET N-CH 650V 24A TO220AB MOSFET N-Channel 650V 24A TO220AB MOSFET, N CH, 650V, 24A, TO-220AB Vishay / Siliconix	1000	1: ¥42.908	Lead free / RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	145 mOhm @ 12A, 10V	122nC @ 10V	650V	2740pF @ 100V	24A (Tc)	Through Hole	TO-220AB	-	-	-	:N Channel	+150 °C	-	-	-	-	-	70 ns	-	-	-	-	-	-	-	-	4.65mm	15.49mm	10.51mm	-	-	SIHP24N65EE3	85044090	±20 V	1	650 V	:2V	:0.12ohm	250 W	0.145 Ω	24 ns	24 A	0.00195	:3	TO220AB	:MSL 1 - Unlimited	10.51 x 4.65 x 15.49mm	3	Enhancement	Power MOSFET	TO-220	Compliant	Tab	10.41(Max)	TO-220AB	9.01(Max)	3	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB30N60E-E3 MOSFET N-Channel 600V MOSFET N-CH 600V 29A D2PAK Vishay / Siliconix	10	1000: ¥20.7536	Lead free / RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	125 mOhm @ 15A, 10V	130nC @ 10V	600V	2600pF @ 100V	29A (Tc)	Surface Mount	D²PAK (TO-263)	E	-	1000	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SIHB22N60E-GE3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK MOSFET 650V 180mOhm 21A TO263 MOSFET N-CH 600V 21A D2PAK MOSFET N-Channel 600V 21A D2PAK MOSFET, N CH, 600V, 21A, D2PAK Vishay , N沟道 MOSFET, 21 A, Vds=600 V, 3针 D2PAK封装 Vishay / Siliconix	143	1: ¥28.152	Lead free / RoHS Compliant	Tube	TO263	1,000	MOSFET N-Channel, Metal Oxide	Super Junction	227W	4V @ 250µA	n.s.Ohm	86nC	600V	1920pF @ 100V	21A (Tc)	Surface Mount	D²PAK	-	-	-	:N Channel	+150 °C	ESeries	-	22A	-	-	59 ns	-	-	-	-	-	-	-	-	9.65mm	4.83mm	10.67mm	1000	1000	SIHB22N60EGE3	85044090	±20 V	1	600 V	:2V	:0.15ohm	227 W	0.18 Ω	18 ns	21 A	0.00143	:3	D2PAK	:MSL 1 - Unlimited	10.67 x 9.65 x 4.83mm	3	N	Power MOSFET	D2PAK	Compliant	Tab	10.41(Max)	D2PAK	4.83(Max)	2	-	Gull-wing	-	-	-	NO	RoHS-conform	NO	227W	600V	SIHB22N60E	12 weeks	0.55K/W
2 SIHB22N60E-E3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS MOSFET N-CH 600V 21A D2PAK Vishay / Siliconix	1000	1: ¥28.152	RoHS Compliant	Tube	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Super Junction	227W	4V @ 250µA	180 mOhm @ 11A, 10V	86nC @ 10V	600V	1920pF @ 100V	21A (Tc)	Surface Mount	D²PAK	E	-	1000	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHB22N60EE3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SiHG32N50D-E3 MOSFET N-CH 500V 32A TO-247AC MOSFET 500V 32A 390W 150mOhm @ 10V MOSFET N-CH 500V 30A TO-247AC VISHAY	10	225: ¥28.968	Lead free / RoHS Compliant	Tube	TO-247-3	500	MOSFET N-Channel, Metal Oxide	Standard	390W	5V @ 250µA	150 mOhm @ 16A, 10V	96nC @ 5V	500V	2550pF @ 100V	30A (Tc)	Through Hole	TO-247AC	E	MOSFET	500	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	5.31 mm	20.82 mm	15.87 mm	500	500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHG32N50D	-	-	-	-	-	-	-	-	-	-	-	-
SIHD7N60E-E3 MOSFET N CH 600V 7A TO-252 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS MOSFET N-CH 600V 7A TO-252 VISHAY	10	3000: ¥5.95	Lead free / RoHS Compliant	Tape & Reel (TR)	TO-252-3, DPak (2 Leads + Tab), SC-63	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	600 mOhm @ 3.5A, 10V	40nC @ 10V	600V	680pF @ 100V	7A (Tc)	Surface Mount	D-PAK (TO-252AA)	E	MOSFET	3000	N-Channel	- 55 C	Si	SMD/SMT	7 A	TrenchFET	Vishay Semiconductors	-	600 V	Single	-	-	-	-	-	-	-	-	-	3000	3000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHD7N60E	-	-	-	-	-	-	-	-	-	-	-	-
SIHP7N60E-E3 MOSFET N CH 600V 7A TO-220AB MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS MOSFET N-CH 600V 7A TO-220AB VISHAY	10	560: ¥8.296	Lead free / RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	600 mOhm @ 3.5A, 10V	40nC @ 10V	600V	680pF @ 100V	7A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	7 A	TrenchFET	Vishay Semiconductors	-	600 V	Single	-	78 W	-	-	-	-	-	-	-	1000	1000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHP7N60E	-	-	-	-	-	-	-	-	-	-	-	-
SIHD6N62E-GE3 MOSFET N-CH 620V 6A TO-252 MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS Vishay Siliconix	10	3000: ¥4.0902	RoHS Compliant	Tape & Reel (TR)	TO-252-3, DPak (2 Leads + Tab), SC-63	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	900 mOhm @ 3A, 10V	34nC @ 10V	620V	578pF @ 100V	6A (Tc)	Surface Mount	D-PAK (TO-252AA)	E	MOSFET	3000	N-Channel	- 55 C	Si	SMD/SMT	6 A	TrenchFET	Vishay Semiconductors	22 ns	700 V	Single	20 V	78 W	34 nC	1.8 S	16 ns	10 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHU6N62E-GE3 MOSFET N-CH 620V 6A TO-251 MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS Vishay Siliconix	2987	1: ¥11.288	RoHS Compliant	Tube	TO-251-3 Long Leads, IPak, TO-251AB	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	900 mOhm @ 3A, 10V	34nC @ 10V	620V	578pF @ 100V	6A (Tc)	Through Hole	IPAK (TO-251)	E	MOSFET	3000	N-Channel	- 55 C	Si	Through Hole	6 A	TrenchFET	Vishay Semiconductors	22 ns	700 V	Single	20 V	78 W	34 nC	1.8 S	16 ns	10 ns	2.39 mm	6.22 mm	6.73 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP12N65E-GE3 MOSFET N-CH 650V 12A TO-220AB MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS Vishay Siliconix	95	1: ¥16.116	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	156W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHF12N65E-GE3 MOSFET N-CH 650V 12A TO-220 MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS Vishay Siliconix	640	5: ¥15.30	RoHS Compliant	Bulk	TO-220-3 Full Pack	1,000	MOSFET N-Channel, Metal Oxide	Standard	33W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Through Hole	TO-220 Full Pack	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB12N65E-GE3 MOSFET N-CH 650V 12A D2PAK MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS Vishay Siliconix	399	1: ¥13.125	RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	156W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Surface Mount	D²PAK (TO-263)	E	MOSFET	1000	N-Channel	- 55 C	Si	SMD/SMT	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP23N60E-GE3 MOSFET N-CH 600V 23A TO-220AB MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS Vishay Siliconix	915	1: ¥22.10	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	227 W	95 nC	6.4 S	34 ns	38 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHF23N60E-GE3 MOSFET N-CH 600V 23A TO-220 MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS Vishay Siliconix	23	1: ¥23.256	RoHS Compliant	Bulk	TO-220-3 Full Pack	1,000	MOSFET N-Channel, Metal Oxide	Standard	35W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Through Hole	TO-220 Full Pack	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	35 W	95 nC	6.4 S	34 ns	38 ns	4.7 mm	15.49 mm	10.41 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SIHP21N65EF-GE3 MOSFET N-CH 650V 21A TO-220AB MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS MOSFET 650V Vds +/-30V Vgs Rds(On) 0.18@10V Vishay Siliconix	1043	1: ¥30.192	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	208W	4V @ 250µA	180 mOhm @ 11A, 10V	106nC @ 10V	650V	2322pF @ 100V	21A (Tc)	Through Hole	TO-220AB	EF	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	21 A	TrenchFET	Vishay Semiconductors	68 ns	700 V	Single	20 V	208 W	106 nC	7 S	68 ns	34 ns	4.7 mm	15.49 mm	10.41 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB23N60E-GE3 MOSFET N-CH 60V 23A D2PAK MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS MOSFET N-CH 600V 23A D2PAK Vishay Siliconix	80	1: ¥26.86	RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Surface Mount	D²PAK (TO-263)	E	MOSFET	1000	N-Channel	- 55 C	Si	SMD/SMT	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	227 W	95 nC	6.4 S	34 ns	38 ns	9.65 mm	4.83 mm	10.67 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SIHP24N65EF-GE3 MOSFET N-CH 650V 24A TO220AB MOSFET 650V 156mOhms@10V 24A N-Ch EF-SRS Vishay Siliconix	10	1000: ¥14.45	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	156 mOhm @ 12A, 10V	122nC @ 10V	650V	2656pF @ 100V	24A (Tc)	Through Hole	TO-220AB	EF	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	24 A	TrenchFET	Vishay Semiconductors	80 ns	700 V	Single	20 V	250 W	122 nC	7.2 S	46 ns	34 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-