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CSD17313Q2
| 制造商 | Texas Instruments Incorporated |
| 描述 | Trans MOSFET N-CH 30V 5A 6-Pin SON T/R MOSFET N-CH 30V 5A 6SON MOSFET Transistor 30V N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 5 A, Vds=30 V, 6针 SON封装 MOSFET 30V N Channel NexFET Power MOSFET |
| 分类 |
商业参数
| 其他名称 | 296-27233-2 | 标准包装数量 | Tape & Reel, Cut Tape |
| 标准封装名称 | SON | ||
合规参数
| RoHS | Lead free / RoHS Compliant | 欧盟RoHS | Compliant |
| 海关税号 | 85412100 | 零件状态 | ACTIVE |
电气参数
| FET类型 | MOSFET N-Channel, Metal Oxide | 最大栅源电压 Vgs | 10 V |
| FET特性 | Logic Level Gate | 最大功率 | 2.3W |
| 下降时间（典型） | 1.3 ns | 晶体管类型 | :N Channel |
| 首抽头延迟 | 4.2 ns | 元件数量 | 1 |
| Vgs(th)（最大）@ Id | 1.8V @ 250µA | 击穿电压 | 30 V |
| 阈值电压 | :1.3V | 最大额定电流 | Catalog |
| 导通电阻 RDS(On) | :26mohm | 导通电阻 Rds(on) (最大) @ Id, Vgs | 30@8V mOhm |
| 最大功耗 | :2.3W | 传播延迟（最大） | 3.9 ns |
| 集电极-发射极饱和电压（最大）@ Vge, Ic | 30 | 导通电阻（最大） | 30@8V |
| 栅极电荷（Qg）（最大）@ Vgs | 2.7nC @ 4.5V | 峰值脉冲电流（8/20µs） | 20 |
| 开关时间（Ton, Toff）（最大） | 2.8 ns | 漏源电压（Vdss） | 30V |
| 峰值脉冲电流（10/1000µs） | 5 A | 输入电容（Ciss）（最大）@ Vds | 340pF @ 15V |
| 连续漏极电流（Id）@ 25°C | 5A (Tc) | ||
机械参数
| 宽度 | 2 | 重量 | 0.00001 |
| 包装方式 | Tape and Reel | 安装类型 | Surface Mount |
| 封装形式 | 6SON | 总长度 | 2 |
| 包装数量 | SON | 位数 | 6 |
| 外壳尺寸-插件 | 0.75(Max) | 供应商器件封装 | 6-SON (2x2) |
产品信息
| 软件 | SLPS260D | 通道类型 | Enhancement |
| 配置 | Single | 图案编号 | Y |
| 功能框图 | alt_slps260d.gif | 使用的IC/零件 | View |
| 其他规格 | 0.4 | 印刷电路板数量 | 6 |
环境参数
| 测试温度 | -55 to 150 | 工作温度 | -55 to 150 °C |
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