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CSD16323Q3
| 制造商 | Texas Instruments Incorporated |
| 描述 | Trans MOSFET N-CH 25V 21A 8-Pin SON EP MOSFET N-CH 25V 3.3X3.3 8-SON MOSFET, N CH, 25V, 60A, 8SON N-Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 60 A, Vds=25 V, 8针 SON封装 MOSFET N-Ch NexFET Pwr MOSFET |
| 分类 |
商业参数
| 其他名称 | 296-24522-2 | 标准包装数量 | Tape & Reel |
合规参数
| RoHS | Contains lead / RoHS compliant by exemption | SVHC | :No SVHC (20-Jun-2013) |
| 欧盟RoHS | Compliant | 海关税号 | 85412900 |
| 零件状态 | ACTIVE | ||
电气参数
| FET类型 | MOSFET N-Channel, Metal Oxide | 最大栅源电压 Vgs | 10 V |
| FET特性 | Logic Level Gate | 最大功率 | 3W |
| 下降时间（典型） | 6.3 ns | 晶体管类型 | :N Channel |
| 首抽头延迟 | 13 ns | 元件数量 | 1 |
| Vgs(th)（最大）@ Id | 1.4V @ 250µA | 击穿电压 | 25 V |
| 阈值电压 | :1.1V | 最大额定电流 | :60A |
| 导通电阻 RDS(On) | :4.4mohm | 触点电压（最大） | :25V |
| 导通电阻 Rds(on) (最大) @ Id, Vgs | 4.5@8V mOhm | 最大功耗 | :3W |
| 传播延迟（最大） | 15 ns | 集电极-发射极饱和电压（最大）@ Vge, Ic | 25 |
| 逻辑电压 - VIL, VIH | Yes | 导通电阻（最大） | 4.5@8V |
| 栅极电荷（Qg）（最大）@ Vgs | 8.4nC @ 4.5V | 峰值脉冲电流（8/20µs） | 112 |
| 开关时间（Ton, Toff）（最大） | 5.3 ns | 漏源电压（Vdss） | 25V |
| 峰值脉冲电流（10/1000µs） | 21 A | 输入电容（Ciss）（最大）@ Vds | 1300pF @ 12.5V |
| 连续漏极电流（Id）@ 25°C | 21A (Ta), 60A (Tc) | ||
机械参数
| 宽度 | 3.3 | 重量 | 0.0001 |
| 包装方式 | Tape & Reel (TR) | 端接方式 | :SMD |
| 安装类型 | Surface Mount | 引脚数 | :8 |
| 封装形式 | 8SON EP | 材料表面处理 | :MSL 1 - Unlimited |
| 总长度 | 3.3 | 包装数量 | SON EP |
| 位数 | 8 | 外壳尺寸-插件 | 1 |
| 供应商器件封装 | 8-SON | ||
产品信息
| 软件 | SLPS224B | 通道类型 | Enhancement |
| 配置 | Single | 图案编号 | Y |
| 功能框图 | alt_slps224b.gif | 使用的IC/零件 | View |
| 其他规格 | 1.1 | 印刷电路板数量 | 8 |
环境参数
| 测试温度 | -55 to 150 | 工作温度 | -55 to 150 °C |
文档与媒体
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