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CSD16301Q2
| 制造商 | Texas Instruments Incorporated |
| 描述 | Trans MOSFET N-CH 25V 5A 6-Pin SON T/R MOSFET N-CH 25V 6-SON MOSFET N-Channel NexFET Power MOSFET MOSFET,N CH,25V,5A,SON-6 N-Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 5 A, Vds=25 V, 6针 SON封装 |
| 分类 |
商业参数
| 商标名 | NexFET | 其他名称 | 296-25260-2 |
| 产品类别 | MOSFET | 标准包装数量 | Tape & Reel |
| 工厂包装数量 | 3000 | 标准封装名称 | SON |
合规参数
| RoHS | Lead free / RoHS Compliant | SVHC | :No SVHC (16-Dec-2013) |
| 欧盟RoHS | Compliant | 海关税号 | 85412900 |
| 零件状态 | ACTIVE | 抗辐射加固 | No |
电气参数
| FET类型 | MOSFET N-Channel, Metal Oxide | 下降时间 | 1.7 ns |
| 最大栅源电压 Vgs | 10 V | FET特性 | Logic Level Gate |
| 栅极电荷 | 2 nC | 最大功率 | 2.3W |
| 噪声系数 | Not Required dB | 额定功率 | 2.3 W |
| 额定输出功率 | Not Required dB | 下降时间（典型） | 1.7 ns |
| 最大频率 | Not Required MHz | 上升时间（典型） | 4.4 ns |
| 晶体管类型 | N-Channel | 首抽头延迟 | 4.1 ns |
| 元件数量 | 1 | Vgs(th)（最大）@ Id | 1.55V @ 250µA |
| 击穿电压 | 25 V | 阈值电压 | :1.2V |
| 最大额定电流 | :5A | 导通电阻 RDS(On) | :0.019ohm |
| 导通电阻 Rds(on) (最大) @ Id, Vgs | 24@8V mOhm | 最大功耗 | :2.3W |
| 传播延迟（最大） | 4.4 ns | 集电极-发射极饱和电压（最大）@ Vge, Ic | 25 V |
| 漏电流（最大） | 5 A | 逻辑电压 - VIL, VIH | Yes |
| 导通电阻（最大） | 24@8V | 电流传输比（最小） | 16.5 S |
| 栅极电荷（Qg）（最大）@ Vgs | 2.8nC @ 4.5V | 峰值脉冲电流（8/20µs） | 20 |
| 开关时间（Ton, Toff）（最大） | 2.7 ns | Vce饱和电压（最大）@ Ib, Ic | Not Required % |
| 漏源电压（Vdss） | 25V | 峰值脉冲电流（10/1000µs） | 5 A |
| 栅极触发电压 Vgt (最大) | 10 V | 漏极电流（Idss）@ Vds（Vgs=0） | 5 A |
| 输入电容（Ciss）（最大）@ Vds | 340pF @ 12.5V | 连续漏极电流（Id）@ 25°C | 5A (Tc) |
机械参数
| 宽度 | 2 | 重量 | 0.00001 |
| 包装方式 | Tape and Reel | 安装类型 | Surface Mount |
| 安装样式 | SMD/SMT | 引脚数 | :6 |
| 封装形式 | 6SON | 冷却的封装 | SON |
| 材料表面处理 | :MSL 1 - Unlimited | 总长度 | 2 |
| 包装数量 | SON | 位数 | 6 |
| 外壳尺寸-插件 | 0.75(Max) | 供应商器件封装 | 6-SON |
产品信息
| 类型 | Power MOSFET | 系列 | CSD16301Q2 |
| 已删除 | Compliant | 极性 | N |
| 软件 | SLPS235C | 通道类型 | Enhancement |
| 配置 | Single | 图案编号 | Y |
| 功能框图 | alt_slps235c.gif | 使用的IC/零件 | View |
| 其他规格 | 0.4 | 印刷电路板数量 | 6 |
环境参数
| 测试温度 | -55 to 150 | 工作温度 | -55 to 150 °C |
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