Vishay Intertechnology, Inc.- 标准逻辑IC

Vishay Intertechnology, Inc. 于1962年由 Felix Zandman 博士创立，总部位于美国宾夕法尼亚州马尔文市。公司是全球最大的分立半导体与被动电子元器件制造商之一，核心业务涵盖二极管、MOSFET、光电元件、电阻器、电感器和电容器的设计、制造与销售。在分立半导体领域，重点产品线包括 TrenchFET® MOSFET、肖特基二极管，以及用于传感与遥控的红外发射/探测器系列。被动元件方面，Vishay 提供业界领先的 IHLP® 大电流功率电感器、用于精密电流检测的 Power Metal Strip® 电阻器，以及 Tantamount® 品牌下的钽电容和 MLCC 等系列。产品广泛应用于工业、电源、汽车、计算、消费电子、通信、军事、航空和医疗等终端市场。Vishay 在功率分立器件和无源元件领域占据全球领先地位，以持续的技术创新和丰富的产品组合著称。通过“一站式”服务模式和成功的收购战略，公司能够为客户提供完整的器件解决方案。其制造设施遍布美洲、欧洲和亚洲，并是 Digi-Key 等分销商的重要合作伙伴，彰显了强大的全球供应能力。

标准逻辑IC - 型号列表

共 205 个型号

制造商零件编号	库存	价格	标准包装数量	封装形式	导通电阻（最大）	最小起订量	单位包装	RoHS	FET类型	FET特性	最大功率	Vgs(th)（最大）@ Id	导通电阻 Rds(on) (最大) @ Id, Vgs	漏源电压（Vdss）	连续漏极电流（Id）@ 25°C	包装方式	安装类型	供应商器件封装	配置	欧盟RoHS	最大栅源电压 Vgs	元件数量	击穿电压	最大功耗	峰值脉冲电流（10/1000µs）	包装数量	位数	类型	通道类型	工作温度	宽度	额定功率	集电极-发射极饱和电压（最大）@ Vge, Ic	漏极电流（Idss）@ Vds（Vgs=0）	总长度	外壳尺寸-插件	印刷电路板数量	标准封装名称	输入电容（Ciss）（最大）@ Vds	晶体管类型	首抽头延迟	传播延迟（最大）	栅极电荷（Qg）（最大）@ Vgs	开关时间（Ton, Toff）（最大）	引脚样式	冷却的封装	下降时间（典型）	供电电压	重量	极性	产品类别	工厂包装数量	海关税号	关断延迟时间	阈值电压	导通电阻 RDS(On)	高度	长度	其他名称	栅极触发电压 Vgt (最大)	安装样式	引脚数	抗辐射加固	材料表面处理	尺寸/外形	卡标准	输入信号	开启时间	开关功能/额定值	下降时间	上升时间（典型）	最大额定电流	端接方式	已删除	技术	触点电压（最大）	插片宽度	SPG	单元数量	噪声系数	额定输出功率	开通延迟时间	最大频率	漏电流（最大）	电流传输比（最大）	Vce饱和电压（最大）@ Ib, Ic	极化	峰值脉冲电流（8/20µs）	测试温度	热阻	共模瞬态抗扰度（最小）	商标名	零件号别名	自然散热热阻	制造商全称	汽车级	无铅定义	逻辑类型	每端口功率（瓦）	供电电压 (Vcc/Vdd)	匹配码	标准交期	热阻 @ GPM	SMD标记	二极管配置	模块/板类型	系列	深度	胶带最大宽度	结工作温度	栅极电荷	电流传输比（最小）	直流电阻（DCR）- 初级	原理图	SVHC	引脚间距
2N6661JTXV02 Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD MOSFET N-CH 90V 860MA TO-205 vishay / siliconix	10	1: ¥3,255.976	Bulk	3TO-205AD	4000@10V	20	20	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	725mW	2V @ 1mA	4000@10V mOhm	90V	860mA (Tc)	Tube	Through Hole	TO-39	-	Not Compliant	±20 V	1	90 V	725	0.86 A	TO-205AD	3	Power MOSFET	Enhancement	-55 to 150 °C	8.15(Max)	0.725 W	90 V	0.86 A	9.4(Max)	6.6(Max)	3	-	50pF @ 25V	-	-	-	-	-	-	TO-205AD	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SI4947ADY-T1-E3 Trans MOSFET P-CH 30V 3.9A 8-Pin SOIC N T/R MOSFET P-CH DUAL 30V 3.0A 8-SOIC SI4947ADY-T1-E3, Dual P-channel MOSFET Transistor 3.9A 30V, 8-Pin SOIC MOSFET 30V 3.9A 2W MOSFET, DUAL P, SO-8 MOSFET;SO8Dual30VP-CH,4.5VRated vishay / siliconix	10	2500: ¥2.2372	Tape & Reel	8SOIC N	0.08 Ω	-	-	Lead free / RoHS Compliant	2 P-Channel (Dual)	Logic Level Gate	1.2W	1V @ 250µA	80@10V mOhm	30V	3A	Tape and Reel	Surface Mount	8-SOIC N	Dual, Dual Drain	Compliant	±20 V	2	30 V	2 W	3.9 A	SOIC N	8	Power MOSFET	P	-55 to 150 °C	4mm	2 W	30 V	3 A	5(Max)	1.55(Max)	8	SOIC	-	P-Channel	21 ns	9 ns	8nC @ 5V	8 ns	Gull-wing	SOIC N	10 ns	-1.2V	0.000001	P	MOSFET	2500	85322300	21ns	:-1V	:62mohm	1.55mm	5mm	SI4947ADY-T1-E3CT	+/- 20 V	SMD/SMT	:8	No	:MSL 1 - Unlimited	5 x 4 x 1.55mm	Power MOSFET	-	-	-	10 ns	9 ns	:-3A	:SMD	Compliant	-	-	-	-	-	Not Required dB	Not Required dB	8ns	Not Required MHz	3.9 A	5S	Not Required %	P-Channel	-	-	-	-	TrenchFET	SI4947ADY-E3	87°C/W	-	-	-	-	-	-	-	-	-	-	:SOIC	:Dual	-	-	-	-	-	-	-	-	-	-
6 SI3552DV-T1-E3 Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET N/P-CH 30V 2.5/1.8A 6TSOP MOSFET;Dual; Complementary; 30V; 2.5/1.8A; TSOP-6 MOSFET 30V 2.5/1.8A MOSFET,Dual,Complementary,30V,2.5/1.8A,TSOP-6 vishay / siliconix	24	1: ¥25.641	Tape & Reel	6TSOP	0.105/0.2Ohms	3000	3000	Lead free / RoHS Compliant	N and P-Channel	Logic Level Gate	1.15W	1V @ 250µA	105@10V@N Channel\|200@10V@P Channel mOhm	30V	2.5A, 1.8A	Tape and Reel	Surface Mount	6-TSOP	Dual	Compliant	±20 V	2	30 V	1.15W	2.5@N Channel\|1.8@P Channel A	TSOP	6	Complementary	N\|P	-55 to 150 °C	1.65 mm	1.15 W	+/- 30 V	2.5 A, 1.8 A	3.05	1(Max)	6	TSOP	-	N and P-Channel	13@N Channel\|12@P Channel ns	9@N Channel\|12@P Channel ns	3.2nC @ 5V	7@N Channel\|8@P Channel ns	Gull-wing	-	5@N Channel\|7@P Channel ns	0.81/-0.83V	-	-	MOSFET	3000	-	13/12ns	-	-	1.1 mm	3.05 mm	SI3552DV-T1-E3CT	+/- 20 V	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	Si	-	-	-	-	-	-	7/8ns	-	-	4.3/2.4S	-	N-ChannelandP-Channel	-	-	-	-	TrenchFET	SI3552DV-E3	130°C/W	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	TrenchFET®	-	-	-	-	-	-	-	-	-
2 SI4816DY-T1-E3 Trans MOSFET N-CH 30V 5.3A/7.7A 8-Pin SOIC N T/R MOSFET N-CH DUAL 30V 8-SOIC DUAL N CH/SCHOTTKY MOSFET, 30V SOIC vishay / siliconix	10	1: ¥12.308	Tape & Reel	8SOIC N	22@10V@Channel 1\|13@10V@Channel 2	1	0	Lead free / RoHS Compliant	2 N-Channel (Dual)	Logic Level Gate	1W, 1.25W	2V @ 250µA	22@10V@Channel 1\|13@10V@Channel 2 mOhm	30V	5.3A, 7.7A	Tape and Reel	Surface Mount	8-SOIC N	-	Compliant	20 V	2	30 V	1000@Channel 1\|1250@Channel 2	5.3@Channel 1\|7.7@Channel 2 A	SOIC N	8	Power MOSFET	Enhancement	-55 to 150 °C	4(Max)	7.7 W	30 V	5.3 A	5(Max)	1.55(Max)	8	SOIC	-	:N Channel + Schottky	26@Channel 1\|44@Channel 2 ns	5 ns	12nC @ 5V	10@Channel 1\|15@Channel 2 ns	Gull-wing	SOIC N	8@Channel 1\|12@Channel 2 ns	-	0.002	N	-	-	85412100	-	:2V	:18mohm	-	-	SI4816DY-T1-E3CT	-	-	-	No	-	-	-	-	-	-	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 SUM45N25-58-E3 Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 MOSFET 250V 45A 375W 58mohm @ 10V N-CH 250V 45A 58mOhm TO263-3 MOSFET N-CH 250V 45A D2PAK SUM45N25-58-E3, N-channel MOSFET Transistor 45A 250V, 3-Pin TO-263 MOSFET,N CH,W DIODE,250V,45A,D2PAK Vishay N沟道 Si MOSFET , 45 A, Vds=250 V, 3针 TO-263封装 vishay / siliconix	10	1: ¥22.911	Rail / Tube, Tape & Reel	3TO-263	0.058 Ω	800	800	RoHS Compliant By Exemption	MOSFET N-Channel, Metal Oxide	Standard	3.75W	4V @ 250µA	58@10V mOhm	250V	45A (Tc)	Reel	Surface Mount	TO-263 (D2Pak)	Single	Compliant	±30 V	1	250 V	3.75 W	45 A	TO-263	3	-	Enhancement	-55 to 175 °C	9.65mm	3.75 W	250 V	45 A	-	-	-	D2PAK	5000pF @ 25V	N-Channel	40 ns	220 ns	140nC	22 ns	Gull-wing	TO-263	145 ns	-	0.00143	-	MOSFET	800	85412900	-	:4V	:0.047ohm	4.83mm	10.41mm	SUM45N25-58-E3CT	+/- 30 V	SMD/SMT	:3	-	:MSL 1 - Unlimited	10.41 x 9.65 x 4.83mm	Power MOSFET	-	-	-	145 ns	220 ns	-	-	-	TrenchFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	RoHS-conform	NO	375W	250V	SUM45N25-58-E3	15 weeks	0.4K/W	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9562901QCA Analog Switch Dual SPST 14-Pin CDIP vishay / siliconix	10	2: ¥850.204	Rail / Tube	14CDIP	70@±15V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Dual SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	425@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	1000@±15V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 IRF840ASPBF Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK N-CH 500V 8A 850mOhm TO263-3 MOSFET N-CH 500V 8A D2PAK IRF840ASPBF, N-channel MOSFET Transistor 8A 500V, 3-Pin D2PAK MOSFET N-Chan 500V 8.0 Amp MOSFET, N, 500V, 8A, D2-PAK TRANSITOR,IRF840ASPBF Transistor: N-MOSFET; unipolar; 500V; 8A; 125W; D2PAK Vishay , N沟道 MOSFET, 8 A, Vds=500 V, 3针 D2PAK封装 Vishay Intertechnology, Inc.	10	1: ¥11.9805	Bulk, Rail / Tube	3D2PAK	0.85 Ω	1000	50	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	3.1W	4V @ 250µA	850@10V mOhm	500V	8A (Tc)	Tube	Surface Mount	D2PAK	Single	Compliant	±30 V	1	500 V	3.1 W	8 A	D2PAK	3	Power MOSFET	Enhancement	-55 to 150 °C	9.65mm	3.1 W	500 V	8A	10.41(Max)	4.83(Max)	2	D2PAK	1018pF @ 25V	N-Channel	26 ns	23 ns	38nC	11 ns	Gull-wing	D2PAK	19 ns	-	0.0018	N	MOSFET	1000	85412900	-	:4V	:850mohm	4.83mm	10.67mm	*IRF840ASPBF	+/- 30 V	SMD/SMT	:3	No	:-	10.67 x 9.65 x 4.83mm	Power MOSFET	-	-	-	19 ns	23 ns	:8A	:SMD	Compliant	HighV.	:500V	Tab	50	1	Not Required dB	Not Required dB	-	Not Required MHz	8 A	-	Not Required %	-	:32A	:25°C	:1°C/W	-	-	-	-	-	NO	RoHS-conform	NO	125W	500V	IRF840ASPBF	12 weeks	1K/W	:IRF840AS	-	-	-	-	-	-	-	-	-	-	-	-
7 IRFL9110PBF Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 MOSFET P-CH 100V 1.1A SOT223 IRFL9110PBF, P-channel MOSFET Transistor 1.1A 100V, 4-Pin SOT-223 MOSFET, P, -100V, -1.1A, SOT-223 MOSFET, P CH, 100V, 1.1A, SOT-223 MOSFET,Power;P-Ch;VDSS-100V;RDS(ON)1.2Ohms;ID-1.1A;SOT-223;PD3.1W;VGS+/-2 Transistor: P-MOSFET; unipolar; -100V; -1.1A; 3.1W; SOT223 MOSFET P, -100 V -1.1 A 2 W SOT-223, IRFL9110PBF, Vishay Vishay , P沟道 MOSFET, 1.1 A, Vds=100 V, 3+Tab针 SOT-223封装 Vishay Intertechnology, Inc.	2417	1: ¥3.0804	Bulk, Rail / Tube	4SOT-223	1.2 Ω	4000	80	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	Standard	2W	4V @ 250µA	1200@10V mOhm	100V	1.1A (Tc)	Tube	Surface Mount	SOT-223	Dual Drain, Single	Compliant	±20 V	1	100 V	2 W	1.1 A	SOT-223	4	Power MOSFET	P	-55 to 150 °C	3.7mm	2 W	100 V	1.1 A	6.7(Max)	1.8(Max) - 0.061	3	SOT-223	200pF @ 25V	:P Channel	15 ns	27 ns	8.7nC @ 10V	10 ns	Gull-wing	SOT-223	17 ns	-5.5V	0.0002	P	-	-	85412900	15ns	:-4V	:1.2ohm	1.45mm	6.7mm	-	-	-	:3	No	:MSL 1 - Unlimited	6.7 x 3.7 x 1.45mm	Power MOSFET	-	-	-	-	-	:-1.1A	:SMD	Compliant	-	:-100V	Tab	160	1	Not Required dB	Not Required dB	10ns	Not Required MHz	1.1 A	0.82S	Not Required %	P-Channel	:8.8A	:25°C	:60°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	:FL9110	-	-	-	:7.3mm	:12mm	+150°C	-	-	-	-	-	-
5962-8671602EA Analog Switch Quad SPST 20-Pin LCC vishay / siliconix	-		Rail / Tube	20LCC	50@±15V Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Yes	65@±10V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 SI7882DP-T1-E3 Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R N-CH REDUCED QG FAST SWITCH MOSFET MOSFET N-CH D-S 12V PPAK 8SOIC MOSFET, N, 8-SOIC vishay / siliconix	10	1: ¥7.344	Tape & Reel	8PowerPAK SO	5.5@4.5V	1	0	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1.9W	1.4V @ 250µA	5.5@4.5V mOhm	12V	13A (Ta)	Tape and Reel	Surface Mount	PowerPAK® SO-8	-	Compliant	±8 V	1	12 V	:5W	13 A	PowerPAK SO	8	-	Enhancement	-55 to 150 °C	5.89	-	-	-	4.9	1.04	8	-	-	:N Channel	82 ns	32 ns	30nC @ 4.5V	28 ns	No Lead	-	35 ns	-	0.0001	-	-	-	85412900	-	:1.4V	:5.5mohm	-	-	-	-	-	:8	-	:MSL 1 - Unlimited	-	-	-	-	-	-	-	:13A	:SMD	-	-	:12V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG411AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-9076401MEA Analog Switch Quad SPST 16-Pin SBCDIP vishay / siliconix	10	50: ¥124.032	Rail / Tube	16SBCDIP	60@15V@-3V Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±10 V	-	-	-	-	-	50@15V@-3V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	70@15V@-3V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VQ1001P QUAD N-CH MOSFET SIDEBRAZE-14 30V 1.0 OHM (HOTS) Trans MOSFET N-CH 30V 0.83A 14-Pin SBCDIP MOSFET N-CH QD 30V 830mA 14DIP MOSFET QD 30V 0.53A MOSFET 4N-CH 30V 830MA 14DIP vishay / siliconix	10	25: ¥320.008	Rail / Tube	14SBCDIP	1000@12V	50	25	Contains lead / RoHS non-compliant	4 N-Channel	Logic Level Gate	1.3W	2.5V @ 1mA	1000@12V mOhm	30V	830mA	*	Through Hole	*	Quad	Not Compliant	±20 V	4	30 V	2000	0.83 A	SBCDIP	14	-	Enhancement	-55 to 150 °C	7.87 mm	2 W	30 V	0.83 A	19.56(Max)	3.05(Max)	14	SBCDIP	110pF @ 15V	N-Channel	-	-	-	-	Through Hole	-	-	-	0.042329 oz	-	MOSFET	25	-	-	-	-	4.45 mm	19.56 mm	-	+/- 20 V	Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N6660JTXV02 Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD MOSFET N-CH 60V 990MA TO-205 vishay / siliconix	10	20: ¥1,351.296	Bulk	3TO-205AD	3000@10V	20	20	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	Standard	725mW	2V @ 1mA	3000@10V mOhm	60V	990mA (Tc)	Tube	Through Hole	TO-39	-	Supplier Unconfirmed	±20 V	1	60 V	725	0.99 A	TO-205AD	3	Power MOSFET	Enhancement	-55 to 125 °C	8.15(Max)	0.725 W	60 V	0.99 A	9.4(Max)	6.6(Max)	3	TO-205AD	50pF @ 25V	-	-	-	-	-	-	TO-205AD	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Military	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DG412AP/883 Analog Switch Quad SPST 16-Pin PDIP vishay / siliconix	-		Rail / Tube	16PDIP	80@10.8V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Quad SPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	145@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	250@12V ns	SPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VP0808B Trans MOSFET P-CH 80V 0.88A 3-Pin TO-205AD MOSFET P-CH 80V 3A TO-205 MOSFET P-CH 80V 880MA TO-205 vishay / siliconix	10	100: ¥456.96	Bulk	3TO-205AD	5000@10V	-	-	Contains lead / RoHS non-compliant	MOSFET P-Channel, Metal Oxide	Standard	6.25W	4.5V @ 1mA	5000@10V mOhm	80V	880mA (Ta)	*	Through Hole	*	-	Not Compliant	±20 V	1	80 V	6250	0.88 A	TO-205AD	3	-	P	-55 to 150 °C	-	-	-	-	-	-	-	TO-205AD	150pF @ 25V	-	20 ns	30 ns	-	11 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD9123 -60V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PACKAG TRANSISTOR:FET:SM SIGNAL MOSFET P-CH 100V 1A 4-DIP MOSFET P-Chan 100V 1.0 Amp Vishay Intertechnology, Inc.	10	1800: ¥8.976	2,500	4-DIP (0.300", 7.62mm)	-	1	0	Contains lead / RoHS non-compliant	MOSFET P-Channel, Metal Oxide	Standard	1.3W	4V @ 250µA	600 mOhm @ 600mA, 10V	100V	1A (Ta)	Bulk	Through Hole	4-HVMDIP	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	390pF @ 25V	-	-	-	18nC @ 10V	-	-	-	-	-	-	-	MOSFET	2500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5962-8996101EA Analog Switch Dual DPST 16-Pin CDIP vishay / siliconix	-		Rail / Tube	16CDIP	55@±13.5V Ohm	1	0	-	-	-	-	-	-	-	-	-	-	-	Dual DPST	-	-	-	-	-	-	-	-	Analog Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±7 V	-	-	-	-	-	100@±15V ns	-	-	-	-	-	-	-	-	-	-	-	-	Yes	150@±15V ns	DPST	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
11 IRFBF30PBF Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB MOSFET N-Chan 900V 3.6 Amp MOSFET N-CH 900V 3.6A TO-220AB IRFBF30PBF, N-channel MOSFET Transistor, 3.6A 900V, 3-Pin TO-220AB N CHANNEL MOSFET, 900V, 3.6A TO-220 IRFBF30PBF Transistor: N-MOSFET; unipolar; 900V; 3.6A; 125W; TO220AB Vishay , N沟道 MOSFET, 3.6 A, Vds=900 V, 3针 TO-220AB封装 Vishay Intertechnology, Inc.	13	1: ¥17.3775	Rail / Tube	3TO-220AB	3.7 Ω	1000	50	RoHS Compliant By Exemption	MOSFET N-Channel, Metal Oxide	Standard	125W	4V @ 250µA	3700@10V mOhm	900V	3.6A (Tc)	Tube	Through Hole	TO-220AB	Single	Compliant	±20 V	1	900 V	125 W	3.6 A	TO-220AB	3	-	Enhancement	-55 to 150 °C	4.7mm	125 W	900 V	3.6 A	10.41(Max)	9.01(Max)	3	TO-220	1200pF @ 25V	N-Channel	90 ns	25 ns	78nC @ 10V	14 ns	Through Hole	TO-220AB	30 ns	-	0.00204	unipolar	MOSFET	1000	85412900	-	:4V	:3.7ohm	9.01mm	10.41mm	*IRFBF30PBF	+/- 20 V	Through Hole	:3	-	-	10.41 x 4.7 x 9.01mm	Power MOSFET	-	-	-	30 ns	25 ns	-	-	-	-	-	Tab	10	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	78 nC	2.3 S	2.3 S	see	-	-
10 IRFP360LCPBF Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC MOSFET N-CH 400V 23A TO-247AC IRFP360LCPBF, N-channel MOSFET Transistor, 23A 400V, 3-Pin TO-247AC MOSFET N-Chan 400V 23 Amp Trans MOSFET N-CH 400V 23A 3-Pin (3+Tab) TO-247AC MOSFET, N, 400V, 23A, TO-247AC IRFP360LCPBF Transistor: N-MOSFET; unipolar; 400V; 23A; 280W; TO247AC Vishay , N沟道 MOSFET, 23 A, Vds=400 V, 3针 TO-247AC封装 Vishay Intertechnology, Inc.	565	1: ¥28.424	Bulk, Rail / Tube	3TO-247AC	0.2 Ω	500	25	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	280W	4V @ 250µA	200@10V mOhm	400V	23A (Tc)	Tube	Through Hole	TO-247-3	Single	Compliant	±30 V	1	400 V	280 W	23 A	TO-247AC	3	-	Enhancement	-55 to 150 °C	5.31mm	280 W	400 V	23 A	15.87(Max)	20.7(Max)	3	TO-247	3400pF @ 25V	N-Channel	42 ns	75 ns	110nC @ 10V	16 ns	Through Hole	TO-247AC	50 ns	-	0.006	unipolar	MOSFET	500	85412900	-	:4V	:200mohm	20.7mm	15.87mm	*IRFP360LCPBF	+/- 30 V	Through Hole	:3	-	:-	15.87 x 5.31 x 20.7mm	Power MOSFET	-	-	-	50 ns	75 ns	:23A	:Through Hole	-	-	:400V	Tab	30	1	-	-	-	-	-	-	-	-	:92A	:25°C	:0.45°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:No SVHC (19-Dec-2012)	:5.45mm

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Vishay Intertechnology, Inc.- 标准逻辑IC

标准逻辑IC - 型号列表

导通电阻（最大）

封装形式

导通电阻 Rds(on) (最大) @ Id, Vgs

连续漏极电流（Id）@ 25°C

峰值脉冲电流（10/1000µs）

最大功率

最大功耗

漏极电流（Idss）@ Vds（Vgs=0）

供应商器件封装

击穿电压

漏源电压（Vdss）

宽度

包装数量

首抽头延迟

传播延迟（最大）

栅极电荷（Qg）（最大）@ Vgs

集电极-发射极饱和电压（最大）@ Vge, Ic

输入电容（Ciss）（最大）@ Vds

外壳尺寸-插件

下降时间（典型）

开关时间（Ton, Toff）（最大）

重量

最小起订量

额定功率

总长度

标准封装名称

导通电阻 RDS(On)

配置

单位包装

Vgs(th)（最大）@ Id

冷却的封装

其他名称

关断延迟时间

高度

长度

标准包装数量

FET类型

工厂包装数量

晶体管类型

尺寸/外形

包装方式

位数

印刷电路板数量

下降时间

上升时间（典型）

供电电压

阈值电压

最大额定电流

开启时间

最大栅源电压 Vgs

触点电压（最大）

SPG

RoHS

欧盟RoHS

元件数量

类型

极性

通道类型

工作温度

海关税号

开通延迟时间

漏电流（最大）

电流传输比（最大）

引脚样式

技术

峰值脉冲电流（8/20µs）

热阻

FET特性

安装类型

零件号别名

栅极触发电压 Vgt (最大)

端接方式

极化

安装样式

引脚数

材料表面处理

自然散热热阻

每端口功率（瓦）