STMicroelectronics N.V.- DDR SDRAM存储芯片

意法半导体公司（STMicroelectronics N.V.）成立于1987年，由意大利SGS微电子公司和法国汤姆逊半导体公司合并而成。公司总部位于瑞士日内瓦，并于1994年上市，在纽约证券交易所、泛欧巴黎证券交易所和米兰证券交易所挂牌交易。ST是全球最大的半导体公司之一，业务涵盖汽车、工业、个人电子和通信基础设施等领域。公司提供极为广泛的产品组合，核心产品包括微控制器（MCU）、模拟芯片、功率器件和传感器等。在MCU领域，STM32系列是业界最知名的32位微控制器，广泛应用于嵌入式系统。模拟产品方面，ST提供运算放大器、比较器和数据转换器，电源管理芯片包括各类电压调节器和电机驱动器。在功率器件上，ST拥有MOSFET、IGBT和碳化硅（SiC）等先进产品，支持高效能电源转换。传感器产品线包括MEMS加速度计、陀螺仪、环境传感器以及飞行时间（ToF）测距传感器。ST技术实力雄厚，拥有强大的研发和制造能力，在全球半导体市场中占据重要地位。根据营收排名，ST常年位列全球半导体前十，并在汽车IC、MEMS传感器和通用MCU等领域保持市场领先。

DDR SDRAM存储芯片 - 型号列表

共 205 个型号

制造商零件编号	库存	价格	标准包装数量	RoHS	欧盟RoHS	接口	存储器容量	存储器类型	额定电压	供电电压	最小供电电压	包装方式	安装类型	封装形式	冷却的封装	包装数量	位数	工作温度	宽度	供应商器件封装	类型	产品类别	工厂包装数量	安装样式	抗辐射加固	存取时间	密度	制造商全称	标准封装名称	重量	引脚数	总长度	外壳尺寸-插件	已删除	印刷电路板数量	SVHC	海关税号	存储器	输出电流	共模瞬态抗扰度（最小）	材料表面处理	最大额定电流	高度	长度	存储器格式	平均整流电流 Io	转速	最小起订量	单位包装	最小输入电压	尺寸/外形	数据转换器	结工作温度	汽车级	无铅定义	频率	VCCB电压	匹配码	标准交期	最高温度限值	自然散热热阻	总线连接	偏置电流	漏电流	输出电压4	输入电容值	上升/下降时间（典型）	开关时间（Ton, Toff）（最大）	ESD保护	最大频率	写入周期时间 - 字、页	引脚样式	SPG	可编程性	单元数量	存储器架构	产品特性	栅极触发电压 Vgt (最大)	基本单元	时钟速率	时钟频率	电容 @ Vr, F	核心数/总线宽度	零件状态	端接方式	其他名称	RAM 大小	日期格式	时间格式	复位时间	温度范围	功能	电池系列	供电电流	最大功耗	系列	电池节数	供电电压 (Vcc/Vdd)	延迟时间	启动定时方式	使用的IC/零件	可编程特性	容差	输入逻辑低电平	输入逻辑高电平	每元件位数	字容量	输入功率	空闲电流，典型值 @ 25°C	结构（如双向、串接等）	字符数	RAM容量/已安装	色温 (K)
9 M24256-BWMN6P EEPROM Serial-I2C 256K-bit 32K x 8 3.3V/5V 8-Pin SO N IC EEPROM 256KBIT 1MHZ 8SO M24256-BWMN6P, Serial EEPROM Memory 256kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC IC, EEPROM SERIAL 256K, SMD, SO-8-8 EEPROMSERIAL256K,SMD,SO-8-8PKG Memory; EEPROM; I2C; 32kx8bit; 2.5÷5.5V; SO8 EEPROM I²C 32 k x 8 Bit SO-8, M24256-BWMN6P, ST STMicroelectronics M24256-BWMN6TP 串行 EEPROM 存储器, 256kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装 EEPROM 256K (32Kx8) stmicroelectronics	1704	1: ¥3.256	Rail / Tube	Lead free / RoHS Compliant	Compliant	Serial-I2C	256K (32K x 8)	EEPROM	3.3\|5 V	2.5V	5.5 V	Tube	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	8-SO	I2C	-	-	-	No	450 ns	256 Kb	32Kx8	SOIC	0.002	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423261	:32K x 8bit	2 mA	Industrial	:-	2.5	1.25mm	4.9mm	EEPROMs - Serial	-	1MHz	1	100	3.5to6.5V	4.9 x 3.9 x 1.25mm	40(Min) Year	85C	NO	RoHS-conform	0.4 MHz	:5V	M24256-BWMN6P	5 weeks	85°C	-40°C	-	2mA(Read),5mA(Write)	±2μA	0.4V	8pF	50ns	50ns	Yes	1 MHz	4M	Gull-wing	500	Yes	1	32kx8bit	-	2.5 to 5.5 V	:24256	-	:1MHz	8pF	-	:24256	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	:5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 M24C01-WMN6TP EEPROM Serial-I2C 1K-bit 128 x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 1KBIT 400KHZ 8SO M24C01-WMN6TP, Serial EEPROM Memory 1kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 1K EEPROM, 1KBIT, I2C, 8SOIC, REEL E-EPROM1K(24C01)SO08.15JED E²ser.I²C 128x8 SO8 2.5V stmicroelectronics	801	35: ¥0.9792	Tape & Reel	Lead free / RoHS Compliant	Compliant	Serial-I2C	1K (128 x 8)	EEPROM	3.3\|5 V	2.5V	5.5 V	Tape and Reel	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	8-SO	I2C	EEPROM	2500	SMD/SMT	No	900 ns	1 Kb	128x8	SOIC	0.003	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423300	:128 x 8	2 mA	Industrial	:MSL 1 - Unlimited	2 mA	1.25mm	4.9mm	EEPROMs - Serial	2 mA	400kHz	2500	2500	3.5to6.5V	4.9 x 3.9 x 1.25mm	40(Min) Year	85C	NO	RoHS-conform	0.4 MHz	-	M24C01-WMN6TP	5 weeks	85°C	-40°C	-	2mA	±2μA	0.4V	8pF(SDA),6pF(OtherPins)	50ns	50ns	Yes	0.4 MHz	1M	Gull-wing	-	Yes	-	-	-	2.5 to 5.5 V	-	0.4 MHz	:400kHz	-	-	-	-	497-8631-1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 M24C02-WMN6TP EEPROM Serial-I2C 2K-bit 256 x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 2KBIT 400KHZ 8SO M24C02-WMN6TP, Serial EEPROM Memory 2kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 2K EEPROM, 2KBIT, I2C, 8SOIC, REEL SERIALEEPROM,256X8,CMOS,SOP,8PIN,PLASTIC STMicroelectronics M24C02-WMN6P 串行 EEPROM 存储器, 2kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装 stmicroelectronics	5000	5000: ¥0.884	Cut Tape	Lead free / RoHS Compliant	Compliant	Serial-I2C	2K (256 x 8)	EEPROM	3.3\|5 V	2.5V	5.5 V	Tape and Reel	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	8-SO	I2C	EEPROM	2500	SMD/SMT	No	900 ns	2 Kb	256x8	SOIC	0.003	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423300	:256 x 8	2 mA	Industrial	:MSL 1 - Unlimited	2 mA	1.25mm	4.9mm	EEPROMs - Serial	2 mA	400kHz	2500	2500	3.5to6.5V	4.9 x 3.9 x 1.25mm	40(Min) Year	85C	NO	RoHS-conform	0.4 MHz	-	M24C02-WMN6TP	5 weeks	85°C	-40°C	-	2mA	±2μA	0.4V	8pF(SDA),6pF(OtherPins)	50ns	50ns	Yes	0.4 MHz	1M	Gull-wing	-	Yes	-	-	-	2.5 to 5.5 V	-	0.4 MHz	:400kHz	-	-	-	-	497-8552-1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 M24C16-WMN6TP EEPROM Serial-I2C 16K-bit 2K x 8 3.3V/5V 8-Pin SO N T/R M24C16-WMN6TP, Serial EEPROM Memory 16kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S I2C 16k EEPROM, 16KBIT, I2C, 8SOIC, REEL SERIALEEPROM,2KX8,CMOS,SOP,8PIN,PLASTIC Memory; EEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8 STMicroelectronics M24C16-WMN6P 串行 EEPROM 存储器, 16kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装 stmicroelectronics	20000	5000: ¥0.4141	Tape & Reel	Compliant	Compliant	Serial-I2C	16kbit	SerialEEPROM	3.3\|5 V	2.5V	5.5 V	Tape and Reel	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	-	I2C	EEPROM	2500	SMD/SMT	No	900 ns	16 Kb	2Kx8	SOIC	0.003	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423300	:2K x 8bit	2 mA	Industrial	:MSL 1 - Unlimited	2 mA	1.25mm	4.9mm	-	2 mA	-	2500	2500	3.5to6.5V	4.9 x 3.9 x 1.25mm	40(Min) Year	85C	NO	RoHS-conform	0.4 MHz	-	M24C16-WMN6TP	5 weeks	85°C	-40°C	-	2mA	±2μA	0.4V	8pF(SDA),6pF(OtherPins)	50ns	50ns	Yes	0.4 MHz	1M	Gull-wing	2500	Yes	2500	2kx8bit	-	2.5 to 5.5 V	-	0.4 MHz	:400kHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 M24C64-WMN6TP EEPROM Serial-I2C 64K-bit 8K x 8 3.3V/5V 8-Pin SO N T/R IC EEPROM 64KBIT 400KHZ 8SO M24C64-WMN6TP, Serial EEPROM Memory 64kbit, Serial-I2C, 900ns 2.5 to 5.5V, 8-Pin SOIC EEPROM EEPROM S. I2C 64k EEPROM, 64KBIT, I2C, 8SOIC, REEL E-EPROM64K(24C64)SO08.15JE Memory; EEPROM; I2C; 8kx8bit; 2.5÷5.5V; SO8 STMicroelectronics M24C64-WMN6P 串行 EEPROM 存储器, 64kbit, 串行 - I2C接口, 900ns, 2.5 → 5.5 V, 8针 SOIC封装 stmicroelectronics	17500	2500: ¥1.8591	Tape & Reel	Lead free / RoHS Compliant	Compliant	Serial-I2C	64K (8K x 8)	EEPROM	3.3\|5 V	2.5V	5.5 V	Tape and Reel	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	8-SO	I2C	EEPROM	2500	SMD/SMT	No	450 ns	64 Kb	8Kx8	SOIC	0.003	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423300	:8K x 8bit	5 mA	Industrial	:MSL 1 - Unlimited	2 mA	1.25mm	4.9mm	EEPROMs - Serial	5 mA	400kHz	2500	2500	3.1to6.1V	4.9 x 3.9 x 1.25mm	200(Min) Year	85C	NO	RoHS-conform	0.4 MHz	-	M24C64-WMN6TP	5 weeks	85°C	-40°C	-	2mA(Read),5mA(Write)	±2μA	0.4V	8pF	50ns	50ns	Yes	1 MHz	4M	Gull-wing	2500	Yes	2500	8kx8bit	-	2.5 to 5.5 V	-	0.4 MHz	:1MHz	8pF	-	-	-	497-8650-1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 M93C46-WMN6TP EEPROM Serial-Microwire 1K-bit 128 x 8/64 x 16 3.3V/5V 8-Pin SO N T/R IC EEPROM 1KBIT 2MHZ 8SO M93C46-WMN6TP, Serial EEPROM Memory 1kbit, Serial-Microwire, 200ns 2.5 to 5.5V, 8-Pin SOIC EEPROM 1K (64x8 or 32x16) EEPROM, 1KBIT, MW, 8SOIC, REEL SERIALEEPROM1KBIT5.5V,8PINSOIC STMicroelectronics M93C46-WMN6P 串行 EEPROM 存储器, 1kbit, 串行 - Microwire接口, 200ns, 2.5 → 5.5 V, 8针 SOIC封装 E²ser. 1K x8/x16 SO8 2.5V stmicroelectronics	6000	41: ¥1.666	Tape & Reel	Lead free / RoHS Compliant	Compliant	Serial-Microwire	1K (128 x 8 or 64 x 16)	EEPROM	3.3\|5 V	2.5V	5.5 V	Tape and Reel	Surface Mount	8SO N	SO N	SO N	8	-40 to 85 °C	3.90 mm	8-SO	MICROWIRE	EEPROM	2500	SMD/SMT	No	200 ns	1 Kb	128x8\|64x16	SOIC	0.003	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423300	:128 x 8	2 mA	Industrial	:MSL 1 - Unlimited	2 mA	1.25mm	4.9mm	EEPROMs - Serial	2 mA	2MHz	2500	2500	3.5to6.5V	4.9 x 3.9 x 1.25mm	40(Min) Year	85C	NO	RoHS-conform	2 MHz	-	M93C46-WMN6TP	8 weeks	85°C	-40°C	-	2mA	±2.5μA	0.4V	5pF	50ns	50ns	Yes	2 MHz	1M	Gull-wing	-	Yes	-	-	-	2.5 to 5.5 V	-	2 MHz	:2MHz	5pF	-	-	-	497-5090-1	-	-	-	-	-	-	-	-	-	-	-	-	50ns	0ns	-	-	-	-	-	-	-	-	-	-	-	-	-
9 M93C56-WMN6P EEPROM SERL-MICROWIRE 2KBIT 256X8/128X16 3.3V/5V 8PIN SO EEPROM Serial-Microwire 2K-bit 256 x 8/128 x 16 3.3V/5V 8-Pin SO N Tube IC EEPROM 2KBIT 2MHZ 8SO M93C56-WMN6P, EEPROM Memory Chip 2kbit,, 4mm x, 8bit,, 200ns 2.5 to 5.5V, 8-Pin SO-8 MEMORY; 2KBIT EEPROM; 2.5 V (MIN.); 10MS; SO8; 0.7 V (MIN.); -0.45 V (MIN.) EEPROM 2K (256x8 or 128x16) EEPROM SERIAL 2K, SMD, 93C56, SOIC8 MEMORY;2KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.) Memory; EEPROM; Microwire; 256x8bit; 2.5÷5.5V; SO8 EEPROM 128 x 16 Bit / 256 x 8 Bit SO-8, M93C56-WMN6P, ST STMicroelectronics EEPROM 芯片, 2kbit, 256 x, 8bit, 200ns, 2.5 → 5.5 V, 8针 SOIC封装 E²ser. 2K x8/x16 SO8 2.5V stmicroelectronics	583	52: ¥1.5586	100	Lead free / RoHS Compliant	Compliant	Serial-Microwire	2K (256 x 8 or 128 x 16)	EEPROM	2.5 V	2.5V	5.5 V	Tube	Surface Mount	SOP8	SO-8	SO N	8	-40°C ~ 85°C	3.90 mm	8-SO	MICROWIRE	EEPROM	2000	SMD/SMT	No	200ns	2Kbit	256x8\|128x16	SOIC	0.000001	:8	5(Max)	1.65(Max)	Compliant	8	:No SVHC (20-Jun-2013)	85423261	:256 x 8, 128 x 16	2 mA	Industrial	:-	2 mA	1.5mm	5mm	EEPROMs - Serial	2 mA	2MHz	100	100	3.5to6.5V	5 x 4 x 1.5mm	40 yr	85C	NO	RoHS-conform	2 MHz	:5V	M93C56-WMN6P	5 weeks	85°C	-40°C	-	2mA	±2.5μA	0.4V	5pF	50ns	50ns	Yes	2 MHz	1M	Gull-wing	1000	Yes	1	256x8bit	-	-	:93	2 MHz	:2MHz	5pF	-	:93C56	-	-	-	-	-	-	-	-	-	-	-	-	-	:5V	50ns	0ns	:M93C56-WMN6P	-	:10%	–0.45V	0.7V	8bit	256	-	-	-	-	-	-
6 M48Z12-150PC1 NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin PCDIP Tube IC NVSRAM 16KBIT 150NS 24DIP NVRAM 16K (2Kx8) 150ns IC, SRAM, 16KB, 5V , 16kbit NVRAM 存储器, 4.5 → 5.5 V, 0 → +70 °C, 24针 PCDIP封装 stmicroelectronics	533	1: ¥190.672	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	16K (2K x 8)	NVSRAM (Non-Volatile SRAM)	4.5	5 V	4.5 V	Tube	Through Hole	24PCDIP	PCDIP	PCDIP	24	0 to 70 °C	18.34(Max)	24-PCDIP, CAPHAT®	NVSRAM	NVRAM	14	Through Hole	No	150 ns	16 Kb	2Kx8	CDIP	0.003333	:24	34.8(Max)	8.89(Max)	Compliant	24	:No SVHC (20-Jun-2013)	85423245	:2K x 8bit	80 mA	Commercial	:-	80	-	-	RAM	80 mA	150ns	-	-	-	-	-	-	-	-	-	:5V	-	-	-	-	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Internal Battery	-	:48	-	-	-	8 Bit	-	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 M48Z02-150PC1 NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin PCDIP Tube IC NVSRAM 16KBIT 150NS 24DIP NVRAM 16K (2Kx8) 150ns SRAM;16KbitSRAM;-0.3to7V;150;PCDIP24;0.8V(Max.);0.3V(Max.);0 NV-RAM 2 k x 8 Bit PCDIP-24, M48Z02-150PC1, ST STMicroelectronics , 16kbit SRAM 内存, 2K x 8, 4.75 → 5.5 V, 24针 PCDIP封装 stmicroelectronics	771	1: ¥205.156	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	16K (2K x 8)	NVSRAM (Non-Volatile SRAM)	4.75	5 V	4.75 V	Tube	Through Hole	24PCDIP	PCDIP	PCDIP	8Bit	0 to 70 °C	18.34mm	24-PCDIP, CAPHAT®	NVSRAM	NVRAM	14	Through Hole	No	150 ns	16 Kb	2Kx8	CDIP	-	24	34.8(Max)	8.89(Max)	Compliant	24	-	-	-	80 mA	Commercial	-	80	8.89mm	34.8mm	RAM	80 mA	150ns	-	-	5.05to5.8V	34.8 x 18.34 x 9.89mm	10yrs.	-	-	-	-	-	-	-	-	-	Parallel	80mA	±1μA	0.4V	10pF	≤5ns	≤5ns	-	-	-	-	-	-	-	-	-	-	-	-	-	10pF	8 Bit	-	-	-	-	-	-	-	-	-	-	80 mA	1W	M48Z02	-	-	-	-	-	-	-	-	-	-	-	4.75...5.5 V	是	2K x 8	2K	16Kbit	-
6 M48Z58-70PC1 NVRAM NVSRAM Parallel 64K-Bit 5V 28-Pin PCDIP Tube ZP8K X 85% IC NVSRAM 64KBIT 70NS 28DIP NVRAM 64K (8Kx8) 70ns ZEROPOWER SRAM 64K, 48Z58, DIP28 Memory; NV SRAM; 8kx8bit; 70ns; DIP28 STMicroelectronics , 64kbit SRAM 内存, 8K x 8 位, 1MHz, 4.75 → 5.5 V, 28针 PCDIP封装 stmicroelectronics	10	1: ¥156.6915	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	64K (8K x 8)	NVSRAM (Non-Volatile SRAM)	4.75	5 V	4.75 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34(Max)	28-PCDIP, CAPHAT®	NVSRAM	NVRAM	12	Through Hole	No	70 ns	64 Kb	8Kx8	-	0.000001	:28	39.88(Max)	8.89(Max)	Compliant	28	:No SVHC (20-Jun-2013)	85423245	:8K x 8bit	50 mA	-	:-	50	-	-	RAM	50 mA	70ns	120	12	-	-	-	-	-	-	-	:5V	-	-	-	-	Parallel	-	-	-	-	-	-	-	-	-	-	10	-	1	8kx8bit	:Internal Battery	-	:48	-	-	-	8 Bit	:48Z58	-	-	-	-	-	:10Yr	:Commercial	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 M48Z35-70PC1 NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin PCDIP Tube ZEROPOWER SRAM 32KX8 70NS DIP28 IC NVSRAM 256KBIT 70NS 28DIP NVRAM 256K (32Kx8) 70ns IC, SRAM ZEROPOWER 256K Memory; NV SRAM; 32kx8bit; 4.75÷5.5V; 70ns; DIP28 , 256kbit NVRAM 存储器, 4.75 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装 stmicroelectronics	256	1: ¥82.484	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	256K (32K x 8)	NVSRAM (Non-Volatile SRAM)	4.75	5 V	4.75 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	-	28-PCDIP, CAPHAT®	NVSRAM	NVRAM	12	Through Hole	No	70ns	256 Kb	32Kx8	-	10.21	:28	-	-	Compliant	-	:No SVHC (20-Jun-2013)	85411000	:32K x 8bit	50 mA	Commercial	:-	50	-	-	RAM	50 mA	70ns	12	12	5.5V	-	-	-	NO	RoHS-conform	-	:5V	M48Z35-70PC1	15 weeks	70°C	0°C	Parallel	-	-	-	-	-	-	-	-	-	-	24	-	1	32kx8bit	:Internal Battery	-	-	-	-	-	8 Bit	-	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 M93S66-WMN6P EEPROM Serial-Microwire 4K-Bit 256 x 16 3.3V/5V 8-Pin SO N Tray EEPROM Serial-Microwire 4K-bit 256 x 16 3.3V/5V 8-Pin SO N Tray IC EEPROM 4KBIT 2MHZ 8SO EEPROM 5.5V 4K (256x16) MEMORY;4KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.) Memory; EEPROM; Microwire; 256x16bit; 2.5÷5.5V; SO8 stmicroelectronics	76	1: ¥9.765	Rail / Tube	Lead free / RoHS Compliant	Compliant	Serial-Microwire	4K (256 x 16)	EEPROM	3.3\|5 V	2.5 V ~ 5.5 V	2.5 V	Tray	Surface Mount	8SO N	SOIC	SO N	8	-40 to 85 °C	4(Max)	8-SO	memory	EEPROM	2000	SMD/SMT	No	-	4 Kb	256x16	SOIC	0.21 g	-	5(Max)	1.65(Max)	Compliant	8	-	-	-	2 mA	Industrial	-	2 mA	1.65 mm (Max)	5 mm (Max)	EEPROMs - Serial	2 mA	2MHz	-	-	-	-	40(Min) Year	85C	-	-	2 MHz	-	-	-	-	-	-	-	-	-	-	-	-	Yes	2 MHz	Yes	Gull-wing	100	Yes	1	256x16bit	-	2.5 to 5.5 V	-	2 MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	2 mA	-	M93S66-W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 M48Z58Y-70MH1F NVRAM NVSRAM Parallel 64K-Bit 5V 28-Pin SOH T/R ZEROPOWER SRAM 8KX8 70NS SOH28 IC NVSRAM 64KBIT 70NS 28SOH NVRAM 64K (8Kx8) 70ns stmicroelectronics	10	1: ¥111.3105	Tape & Reel	Lead free / RoHS Compliant	Compliant	Parallel	64K (8K x 8)	NVSRAM (Non-Volatile SRAM)	4.5	5 V	4.5 V	Tape and Reel	Surface Mount	28SOH	SOH	SOH	28	0 to 70 °C	330mil	28-SOH	NVSRAM	NVRAM	936	SMD/SMT	No	70ns	64 Kb	8Kx8	SOH	-	-	18.49(Max)	2.69(Max)	-	28	-	-	-	50 mA	Commercial	-	50	-	-	RAM	50 mA	70ns	1	936	5.5V	-	-	-	NO	RoHS-conform	-	-	M48Z58Y-70MH1F	15 weeks	70°C	0°C	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8 Bit	-	-	497-4730-1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50mA
8 M48T35AV-10PC1 NVRAM NVSRAM Parallel 256K-Bit 3.3V 28-Pin PCDIP Tube Real Time Clock Parallel 256Byte 28-Pin PCDIP Tube TK 32K X 83.3V IC TIMEKPR NVRAM 256KBIT 3V 28DI M48T35AV-10PC1, NVRAM Memory 256kbit Through Hole, 3 to 3.6V, 0 to +70°C, 28-Pin, PCDIP NVRAM 256K (32Kx8) 100ns NVRAM, TIMEKEEPER, 3V, 256K, CAPHAT M48Z35AV-10MH1E IC RTC CLK/CALENDAR PAR 28-DI , 256kbit NVRAM 存储器, 3 → 3.6 V, 0 → +70 °C, 28针 PCDIP封装 stmicroelectronics	478	1: ¥219.572	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	256kbit	:NVRAM	3 V	3.3 V	3.6 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34mm	28-PCDIP, CAPHAT®	NVSRAM	NVRAM	12	Through Hole	No	100ns	256 Kb	32Kx8	CDIP	0.006669	:28	39.88(Max)	8.89(Max)	Compliant	28	:No SVHC (20-Jun-2013)	85423245	:32K x 8bit	30 mA	-	:-	-	8.89mm	39.88mm	8 b	30 mA	-	60	12	-	39.98 x 18.34 x 8.89mm	-	70C	-	-	-	:3.3V	-	-	-	-	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Leap Year	-	:48	-	-	-	8 Bit	-	:Through Hole	-	256 B	DW:DM:M:Y	HH:MM:SS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 M48Z35Y-70PC1 NVRAM NVSRAM Parallel 256K-Bit 5V 28-Pin PCDIP Tube ZEROPOWER SRAM 32KX8 70NS DIP28 IC NVSRAM 256KBIT 70NS 18DIP M48Z35Y-70PC1, NVRAM Memory 256kbit Through Hole, 4.5 to 5.5V, 0 to +70°C, 28-Pin, PCDIP NVRAM 256K (32Kx8) 70ns NVRAM, 10 YR BATTERY 256K, 48Z35 Memory;256Kbit;4.5to5.5V;70;PCDIP28;0.8V(Max.);2.2V(Min.);0;70 NV-RAM 32 k x 8 Bit PCDIP-28, M48Z35Y-70PC1, ST , 256kbit NVRAM 存储器, 4.5 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装 stmicroelectronics	729	1: ¥202.9861	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	256K (32K x 8)	NVSRAM (Non-Volatile SRAM)	4.5 V	5 V	5.5 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34mm	28-PCDIP, CAPHAT®	NVSRAM	NVRAM	12	Through Hole	No	70ns	256 Kb	32Kx8	-	0.0062	:28	39.88(Max)	8.89(Max)	Compliant	28	:No SVHC (20-Jun-2013)	85423245	:32K x 8bit	50 mA	Commercial	:-	50	8.89mm	39.88mm	RAM	50 mA	70ns	120	12	5.5V	39.98 x 18.34 x 8.89mm	10yrs.	-	NO	RoHS-conform	-	:5V	M48Z35Y-70PC1	15 weeks	70°C	0°C	Parallel	50mA	±1μA	0.4V	10pF	≤5ns	≤5ns	-	-	-	-	-	-	-	-	:Internal Battery	-	:48	-	-	10pF	8 Bit	:48Z35	-	-	-	-	-	:10Yr	:Commercial	-	-	-	1W	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 M48T18-150PC1 Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28-DI Memory; 64Kbit SRAM; 4.5 to 5.5 V; 150; PCDIP 28 pin; -0.3 V (Min.); 2.2 V (Min. Real Time Clock 64K (8Kx8) 150ns IC, SRAM TIMEKEEPER 64K Memory;64KbitSRAM;4.5to5.5V;150;PCDIP28pin;-0.3V(Min.);2.2V(Min. NV-RAM 8 k x 8 Bit PCDIP-28, M48T18-150PC1, ST 实时时钟 (RTC), 计时器 SRAM功能, 64kbit RAM, 4.5 → 5.5 V电源, 28针 PCDIP封装 stmicroelectronics	416	1: ¥338.436	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	:64Kbit	:NVRAM	4.5	5 V	4.5 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34(Max)	28-PCDIP, CAPHAT®	Clock/Calendar	Real Time Clock	12	Through Hole	No	:150ns	64K	8K×8	CDIP	0.15	:28	39.88(Max)	8.89(Max)	Compliant	28	:No SVHC (20-Jun-2013)	85411000	8 KB	-	-	:-	-	-	-	-	-	-	-	-	4.8to5.8V	-	10yrs.	70C	-	-	:32768Hz	:5V	-	-	-	-	Parallel	80mA	±1μA	0.4V	10pF	≤5ns	≤5ns	-	-	-	-	-	-	-	-	Leap Year, Watchdog Timer	-	-	-	-	10pF	-	-	:Through Hole	-	8192 byte	DW:DM:M:Y	HH:MM:SS	-	-	Clock/Calendar/NV Timekeeping RAM/Battery Backup	Yes	-	1W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 M48T58Y-70PC1 Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28DIP M48T58Y-70PC1, Real Time Clock, Battery Backup, Calendar, Clock, 8192B RAM, Parallel, 5V, 28-Pin PCDIP Real Time Clock 64K (8Kx8) 70ns IC, NVRAM, 10 YR BATTERY 64K, 48T58 RTC,M48T58Y-70PC1 实时时钟 (RTC), 备用电池、日历、芯片取消选择、转移、写入保护功能, 8192B RAM, 并行总线, 4.5 → 5.5 V电源, 28针 PCDIP封装 stmicroelectronics	10	1: ¥224.5425	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	:64Kbit	:NVRAM	4.5 V	5 V	5.5 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34mm	28-PCDIP, CAPHAT®	Clock/Calendar	Real Time Clock	12	Through Hole	No	:70ns	-	-	CDIP	0.0062	:28	-	-	Compliant	-	:No SVHC (20-Jun-2013)	85423245	8 KB	-	Commercial	:-	-	8.89mm	39.88mm	-	-	-	-	-	-	39.88 x 18.34 x 8.89mm	-	70C	-	-	-	:5V	-	-	-	-	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Leap Year	-	:48	-	-	-	-	:48T58	-	-	8192 byte	DW:DM:M:Y	HH:MM:SS	:10Yr	:Commercial	Clock/Calendar/NV Timekeeping RAM/Battery Backup	Yes	-	-	-	-	-	-	-	-	Battery Backup, Calendar, Chip Deselect, Clock, Switch Over, Write Protection	-	-	-	-	-	-	-	-	-	-	-
8 M48T35-70PC1 Real Time Clock Parallel 32KByte 28-Pin PCDIP Tube TIMEKEEPER SRAM 32KX8 DIP28 IC TIMEKPR NVRAM 256KBIT 5V 28DI M48T35-70PC1, Non Volatile RAM + RTC Through Hole, 4.75 to 5.5V, 0 to +70°C, 28-Pin, PCDIP Real Time Clock 256K (32Kx8) 70ns IC, SRAM TIMEKEEPER 256K MEMORYM48T35-70PC1 Memory; NV SRAM; 32kx8bit; 4.75÷5.5V; 70ns; DIP28 IC RTC CLK/CALENDAR PAR 28-DI , 32kbit NVRAM + RTC, 4.75 → 5.5 V, 0 → +70 °C, 28针 PCDIP封装 stmicroelectronics	494	1: ¥128.52	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	:256Kbit	:NVRAM	4.75 V	5 V	5.5 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34mm	28-PCDIP, CAPHAT®	TIMEKEEPER	Real Time Clock	12	Through Hole	-	70ns	256Kbit	32Kx8	CDIP	0.17	:28	-	-	-	-	:No SVHC (20-Jun-2013)	85411000	32 KB	-	Commercial	:-	-	8.89mm	39.88mm	-	-	-	60	12	5.0V	39.98 x 18.34 x 8.89mm	-	-	NO	RoHS-conform	:32768Hz	:5V	M48T35-70PC1	27 weeks	70°C	0°C	Parallel	-	-	-	-	-	-	-	-	-	-	48	-	1	32kx8bit	Leap Year	-	-	-	-	-	-	-	:Through Hole	-	32768 byte	DW:DM:M:Y	HH:MM:SS	-	-	Clock/Calendar/NV Timekeeping RAM/Watchdog Timer/Battery Backup	Yes	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 M48T18-100PC1 Real Time Clock Parallel 8KByte 28-Pin PCDIP Tube IC TIMEKPR NVRAM 64KBIT 5V 28-DI M48T18-100PC1, Real Time Clock, Battery Backup, Calendar, Clock, 8192B RAM, Parallel, 5V, 28-Pin PCDIP Real Time Clock 64K (8Kx8) 100ns SRAM TIMEKEEPER 64K, 48T18, DIP28 Memory; NV SRAM; 8kx8bit; 100ns; DIP28 实时时钟 (RTC), 备用电池、日历、芯片取消选择、转移、写入保护功能, 8192B RAM, 并行总线, 4.5 → 5.5 V电源, 28针 PCDIP封装 TIMEKEEPER SRAM 8KX8 DIP28 stmicroelectronics	10	1: ¥215.4915	Rail / Tube	Lead free / RoHS Compliant	Compliant	Parallel	:64Kbit	:NVRAM	4.5 V	5 V	5.5 V	Tube	Through Hole	28PCDIP	PCDIP	PCDIP	28	0 to 70 °C	18.34mm	28-PCDIP, CAPHAT®	Clock/Calendar	Real Time Clock	12	Through Hole	-	:100ns	-	-	CDIP	0.000001	:28	39.88(Max)	8.89(Max)	-	28	:No SVHC (20-Jun-2013)	85423245	8 KB	-	-	:-	-	8.89mm	39.88mm	-	-	-	-	-	-	39.88 x 18.34 x 8.89mm	-	-	-	-	-	:5V	-	-	-	-	Parallel	-	-	-	-	-	-	-	-	-	-	3	-	1	8kx8bit	Leap Year, Watchdog Timer	-	:48	-	-	-	-	:48T18	-	-	8192 byte	DW:DM:M:Y	HH:MM:SS	:10Yr	:Commercial	Clock/Calendar/NV Timekeeping RAM/Battery Backup	Yes	-	-	-	-	-	-	-	:M48T18-100PC1	Battery Backup, Calendar, Chip Deselect, Clock, Switch Over, Write Protection	-	-	-	-	-	-	-	-	-	-	-
2 M93S56-WMN6P EEPROM Serial-Microwire 2K-bit 128 x 16 3.3V/5V 8-Pin SO N Tray IC EEPROM 2KBIT 2MHZ 8SO EEPROM 2.5 V to 5.5V 16K MEMORY;2KBITEEPROM;2.5V(MIN.);10MS;SO8;0.7V(MIN.);-0.45V(MIN.) stmicroelectronics	10	1: ¥2.9505	Rail / Tube	Lead free / RoHS Compliant	Compliant	Serial-Microwire	2K (128 x 16)	EEPROM	3.3\|5 V	2.5 V ~ 5.5 V	2.5 V	Tray	Surface Mount	8SO N	SOIC N	SO N	8	-40 to 85 °C	4(Max)	8-SO	-	EEPROM	100	SMD/SMT	No	-	2 Kb	128x16	SOIC	-	-	5(Max)	1.65(Max)	Compliant	8	-	-	-	2 mA	Industrial	-	2 mA	1.65 mm (Max)	5 mm (Max)	EEPROMs - Serial	2 mA	2MHz	-	-	-	-	40(Min) Year	85C	-	-	2 MHz	-	-	-	-	-	-	-	-	-	-	-	-	Yes	2 MHz	Yes	Gull-wing	-	Yes	-	-	-	2.5 to 5.5 V	-	2 MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	2 mA	-	M93S56-W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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STMicroelectronics N.V.- DDR SDRAM存储芯片

DDR SDRAM存储芯片 - 型号列表

存储器容量

存取时间

匹配码

重量

制造商全称

密度

存储器

SPG

额定电压

最小起订量

零件状态

最小输入电压

冷却的封装

类型

工厂包装数量

转速

输出电流

最小供电电压

宽度

长度

封装形式

尺寸/外形

存储器架构

其他名称

平均整流电流 Io

单位包装

标准包装数量

海关税号

存储器类型

偏置电流

数据转换器

供电电压

输入电容值

最大额定电流

高度

引脚数

总长度

位数

供应商器件封装

标准交期

标准封装名称

频率

接口

时钟频率

最大频率

漏电流

电容 @ Vr, F

写入周期时间 - 字、页

包装方式

包装数量

外壳尺寸-插件

基本单元

存储器格式

印刷电路板数量

工作温度

产品类别

产品特性

系列

RAM 大小

RoHS

VCCB电压

上升/下降时间（典型）

开关时间（Ton, Toff）（最大）

共模瞬态抗扰度（最小）

端接方式

安装类型

材料表面处理

单元数量

最高温度限值

自然散热热阻

结工作温度

时钟速率

安装样式

使用的IC/零件

供电电流

功能