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Infineon Technologies AG

Infineon Technologies AG- 通用双极型晶体管

英飞凌科技股份公司(Infineon Technologies AG)于1999年5月1日由西门子半导体部门独立并更名成立,总部位于德国慕尼黑。公司是全球领先的半导体解决方案提供商,核心业务涵盖汽车、工业、通信及消费电子领域。主要产品线包括功率器件(如CoolMOS、OptiMOS、CoolSiC、CoolGaN系列)、微控制器(AURIX、TRAVEO、XMC系列)、传感器(磁性传感器、压力传感器、雷达芯片)以及安全芯片(SLE 78、OPTIGA系列)等。英飞凌致力于应对能源效率、出行和安全三大社会核心挑战。公司在全球多个国家拥有制造基地和研发中心,构建了完整的产业链。英飞凌在汽车电子和功率半导体领域居于市场领导地位,是全球最大的汽车半导体供应商之一。其企业口号为'永不停止思考',彰显持续创新的精神。在中国,英飞凌曾投资成立奇梦达生产内存产品,并与本地代理商广泛合作。凭借先进的工艺技术和系统级方案,英飞凌不断推动智能化和绿色电子系统发展。

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通用双极型晶体管 - 型号列表

1,719 个型号

直流电流增益 hFE (最小) @ Ic, Vce

零件号别名

供电电压

集电极截止电流(最大)

其他名称

集电极电流(Ic)(最大)

封装形式

系列

标准包装数量

工厂包装数量

最大功率

过渡频率

Vce饱和电压(最大)@ Ib, Ic

集电极-发射极饱和电压(最大)@ Vge, Ic

供应商器件封装

增益带宽积

最大功耗

产品类别

电阻匹配比

配置

工作温度

Vce饱和电压(最大)

晶体管类型

基极电阻(R1)

包装方式

增益

噪声系数(dB典型值 @ f)

最大频率

最小输入电压

类型

平均正向功率

宽度

高度

制造商零件编号库存价格直流电流增益 hFE (最小) @ Ic, Vce安装类型标准包装数量包装方式封装形式产品类别RoHS工厂包装数量最大功率晶体管类型供电电压过渡频率Vce饱和电压(最大)@ Ib, Ic集电极电流(Ic)(最大)供应商器件封装工作温度集电极截止电流(最大)零件号别名配置安装样式最大功耗集电极-发射极饱和电压(最大)@ Vge, Ic其他名称系列增益带宽积机械寿命宽度制造商全称Vce饱和电压(最大)类型平均正向功率高度长度电阻匹配比最大频率最小输入电压位数基极电阻(R1)发射极-基极电阻(R2)集电极脉冲电流 (Icm)增益噪声系数(dB典型值 @ f)标准封装名称欧盟RoHS引脚样式包装数量元件数量电源电压(最大)频率额定功率技术总长度外壳尺寸-插件印刷电路板数量
BCR 198S E6327

Transistors Switching - Resistor Biased PNP Silicon Digital TRANSISTOR TRANS PREBIAS DUAL PNP SOT363

Infineon Technologies

-70Surface Mount3,000ReelSOT-363-6Transistors Switching - Resistor BiasedRoHS Compliant18000250mWPNP50 V190MHz300mV @ 500µA, 10mA100mAPG-SOT363-6+ 150 C-BCR198SE6327XTDualSMD/SMT-----Obsolete-------1---47 KOhms47k100 mA--------------
BFG 196 E6327

Transistors Bipolar - BJT NPN Silicon RF TRANSISTOR TRANSISTOR RF NPN 12V SOT-223

Infineon Technologies

-70 at 50 mA at 8 VSurface Mount2,000ReelSOT-223-4Transistors Bipolar - BJTRoHS Compliant1000800mWNPN12 V7.5GHz2 V150mAPG-SOT223-4+ 150 C0.15 A-SingleSMD/SMT800 mW20 V--7500 MHzObsolete--------------9dB ~ 14.5dB1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz------------
BCP 56-10 H6433

Transistors Bipolar - BJT AF TRANSISTOR TRANS NPN AF 80V 1A SOT223

Infineon Technologies

-63 @ 150mA, 2VSurface Mount4,000ReelTO-261-4, TO-261AATransistors Bipolar - BJTRoHS Compliant40002WNPN80V100MHz500mV @ 50mA, 500mA1APG-SOT223-4--BCP5610H6433XT----SP000748368--Obsolete----------------------------
BCX 56-16 E6327

Transistors Bipolar - BJT NPN Silicon AF TRANSISTOR TRANSISTOR NPN AF 80V SOT-89

Infineon Technologies

50001000: ¥0.856825Surface Mount1,000ReelSOT-89Transistors Bipolar - BJTRoHS Compliant10002WNPN80 V100MHz5 V1APG-SOT89-4+ 150 C1 ABCX5616E6327HTSA1 BCX5616E6327XT SP000010913SingleSMD/SMT1000 mW100 VBCX 56-16 E6327CTBCX56100 MHz---5 V-------------------------
BC847CE6327XT

Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R

infineon technologies

420001: ¥0.0748420@2mA@5VSurface MountCut Tape-3SOT-23-----------65 to 150 °C0.1 A---330 mW50 V-------NPN----250(Typ) MHz45 V3-----------------
MMBT 2222A LT1
4

Transistors Bipolar - BJT AF TRANS GP BJT NPN 40V 0.6A TRANSISTOR SWITCHING NPN SOT-23 Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.6A

Infineon Technologies

4793421: ¥3.12835 at 100 uA at 10 VSurface Mount3,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant45000330mWNPN40 V300MHz6 V600mAPG-SOT23-3+ 150 C0.6 AMMBT2222ALT1HTSA1 MMBT2222ALT1XT SP000011174SingleSMD/SMT330 mW75 VMMBT2222ALT1INDKRMMBT2222300 MHz-1.3 mmInfineon Technologies1 V-330 mW1 mm2.9 mm---------------------
MMBT 3904 LT1
4

Transistors Bipolar - BJT AF TRANS GP BJT NPN 40V 0.2A TRANSISTOR HI-VOLT NPN SOT-23 Bipolar Transistors - BJT AF TRANS GP BJT NPN 40V 0.2A

Infineon Technologies

300003000: ¥0.207540 at 100 uA at 1 VSurface Mount3,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant54000330mWNPN40 V300MHz6 V200mAPG-SOT23-3+ 150 C0.2 AMMBT3904LT1HTSA1 MMBT3904LT1XT SP000011671SingleSMD/SMT330 mW60 VMMBT3904LT1INDKRMMBT3904300 MHz-1.3 mmInfineon Technologies0.3 V-330 mW1 mm2.9 mm---------------------
BCX 51-16 E6327

Transistors Bipolar - BJT PNP Silicon AF TRANSISTOR TRANSISTOR PNP AF 45V SOT-89

Infineon Technologies

101000: ¥0.856825Surface Mount1,000ReelSOT-89Transistors Bipolar - BJTRoHS Compliant10002WPNP45 V125MHz5 V1APG-SOT89-4+ 150 C1 ABCX5116E6327HTSA1 BCX5116E6327XT SP000014827SingleSMD/SMT1000 mW45 VBCX 51-16 E6327CTBCX51125 MHz---5 V-------------------------
JANS2N6851U

HEXFET, HI-REL, QPL, SPACE

Infineon Technologies AG

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OMD100LP

QUAD MOSFET

Infineon Technologies AG

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OMD200LP

QUAD MOSFET

Infineon Technologies AG

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BC847AE6327XT

Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R

infineon technologies

101: ¥0.253110@2mA@5VSurface MountTape & ReelTape and Reel3SOT-23-----------65 to 150 °C0.1 A---330 mW50 V-------NPN----250(Typ) MHz45 V3-----SOT-23CompliantGull-wingSOT-2316------
IRHNA57163SED/SLDC

130V 750.000A HEXFET RADHARD

Infineon Technologies AG

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IRFM7150

HEXFET, HI-REL

Infineon Technologies AG

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BCX 42 E6433
3

Transistors Bipolar - BJT NPN Silicn AF/SWITCH TRANSISTOR TRANSISTOR SW AF PNP SOT-23 Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Infineon Technologies

99981: ¥3.0625Surface Mount10,000ReelSOT-23Transistors Bipolar - BJTRoHS Compliant10000330mWPNP125 V150MHz5 V800mAPG-SOT23-3+ 150 C0.8 ABCX42E6433HTMA1 BCX42E6433XT SP000010902SingleSMD/SMT330 mW125 V-BCX42150 MHz-1.3 mmInfineon Technologies--330 mW1 mm (Max)2.9 mm---------------------
BCR 135 E6327

Transistors Switching - Resistor Biased NPN Silicon Digital TRANSISTOR TRANS PREBIAS NPN 200MW SOT23-3 TRANSISTOR NPN DGTL AF SOT-23 Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Infineon Technologies

105: ¥0.93170Surface Mount3,000ReelSOT-23-3Transistors Switching - Resistor BiasedRoHS Compliant3000200mWNPN50 V150MHz300mV @ 500µA, 10mA100mAPG-SOT23-3+ 150 C100 mABCR135E6327HTSA1 BCR135E6327XT SP000010765SingleSMD/SMT--BCR 135 E6327CTBCR135--1.3 mmInfineon Technologies---1 mm2.9 mm0.21---10 KOhms47k100 mA--------------
BFP 520 H6327
2

Transistors RF Bipolar Small Signal RF BIP TRANSISTOR TRANS RF NPN 3.5V 40MA SOT343 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR

Infineon Technologies

60001: ¥2.99270 @ 20mA, 2VSurface Mount3,000ReelSC-82A, SOT-343Transistors RF Bipolar Small SignalRoHS Compliant3000100mWNPN3.5V45GHz1 V40mAPG-SOT343-4-50 mABFP520H6327XT BFP520H6327XTSA1 SP000745280Single Dual EmitterSMD/SMT--BFP 520 H6327CTBFP520---Infineon Technologies-RF Bipolar Small Signal125 mW---45 GHz-----22.5dB0.95dB @ 1.8GHz------45 GHz125 mWSi---
BCP 54-16 E6433

Transistors Bipolar - BJT NPN Silicon AF TRANSISTOR TRANSISTOR NPN AF 45V SOT-223

Infineon Technologies

40004000: ¥1.094125 at 5 mA at 2 V, 100 at 150 mA at 2 V, 25 at 500 mA at 2 VSurface Mount4,000ReelSOT-223-4Transistors Bipolar - BJTRoHS Compliant40002WNPN45 V100MHz5 V1APG-SOT223-4+ 150 C1 ABCP5416E6433HTMA1 BCP5416E6433XT SP000010717SingleSMD/SMT2000 mW45 VBCP 54-16 E6433CTBCP54100 MHz-----------------------------
BCR108B6327XT

Transistors Switching - Resistor Biased NPN Silicon Digital TRANSISTOR Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Infineon Technologies

1030000: ¥0.138770@5mA@5VSurface Mount-Reel-Transistors Switching - Resistor BiasedRoHS Compliant--------150100-Single-200----Obsolete1.3--NPN---0.047-503-----SOT-23CompliantGull-wingSOT-23-----2.91(Max)3
BDP 954 H6327

Transistors Bipolar - BJT AF TRANSISTOR TRANS PNP AF PWR 100V 3A SOT223

Infineon Technologies

-85 @ 500mA, 1VSurface Mount1,000ReelTO-261-4, TO-261AATransistors Bipolar - BJTRoHS Compliant10005WPNP100V100MHz500mV @ 200mA, 2A3APG-SOT223-4--BDP954H6327XT----SP000748528--Obsolete----------------------------
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