TP65H035G4WSQA
| 制造商 | |
| 描述 | . TP65H035G4WSQA - N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3 from Renesas Electronics Corporation. from now! |
| 分类 |
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规格参数
| Mfr | Renesas Electronics Corporation | Grade | Automotive |
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) | FET Feature | - |
| Part Status | Obsolete | Mounting Type | Through Hole |
| Qualification | AEC-Q101 | Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA | Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V | Power Dissipation (Max) | 187W (Tc) |
| Supplier Device Package | TO-247-3 | Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V | Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 47.2A (Tc) |