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IPS13 transistor 系列

N-channel MOSFET transistors for power applications, 30V 30A, TO-251 package

系列图片(4 张)

文档与媒体

IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD13N03LA_Rev2.2_G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42a9a6943b4
IPD135N03LG_rev1.04.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42730253bcb
IPD135N03LG_rev1.04.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a30431936bc4b011999904c006875

常见问答

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IPS13 transistor - 型号列表

7 个型号

击穿电压

导通电阻 Rds(on) (最大) @ Id, Vgs

工作温度

最大功耗

导通电阻(最大)

标准包装数量

最大栅源电压 Vgs

峰值脉冲电流(10/1000µs)

安装类型

封装形式

通道类型

RoHS

最大功率

Vgs(th)(最大)@ Id

栅极电荷(Qg)(最大)@ Vgs

漏源电压(Vdss)

输入电容(Ciss)(最大)@ Vds

宽度

制造商零件编号库存价格产品类别安装类型最大栅源电压 Vgs击穿电压峰值脉冲电流(10/1000µs)通道类型工作温度标准包装数量导通电阻 Rds(on) (最大) @ Id, Vgs封装形式元件数量最大功耗导通电阻(最大)宽度包装数量位数首抽头延迟开关时间(Ton, Toff)(最大)RoHSFET类型FET特性最大功率Vgs(th)(最大)@ Id栅极电荷(Qg)(最大)@ Vgs漏源电压(Vdss)输入电容(Ciss)(最大)@ Vds连续漏极电流(Id)@ 25°C包装方式供应商器件封装标准封装名称欧盟RoHS插片宽度引脚样式总长度外壳尺寸-插件印刷电路板数量下降时间(典型)商标名零件号别名工厂包装数量下降时间额定功率开通延迟时间输出功能上升时间(典型)晶体管类型关断延迟时间供电电压通道数量输入电阻平均正向功率集电极-发射极饱和电压(最大)@ Vge, Ic栅极触发电压 Vgt (最大)漏极电流(Idss)@ Vds(Vgs=0)高度长度安装样式引脚数冷却的封装尺寸/外形系列功能技术制造商全称卡标准配置
IPS135N03LG
IPS135N03LG

Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251

infineon technologies

2861¥1.30-Surface Mount±20 V30 V30 AEnhancement-55 to 175 °CRail / Tube13.5@10V mOhm3TO-251------12 ns3 ns------------------2 ns-----------------------------
IPS135N03L G
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IPS135N03L G

MOSFET N-CH 30V 30A 13.5mOhms MOSFET N-CH 30V 30A TO251-3 MOSFET N-Channel 30V 30A OptiMOS3 TO251 Infineon OptiMOS 3 系列 Si N沟道 MOSFET 晶体管 , 30 A, Vds=30 V, 3针 TO-251封装 MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3

Infineon Technologies

307¥1.35MOSFETThrough Hole±20 V30 V30 AEnhancement+175 °C1,50013.5 mOhm @ 30A, 10VTO-251-3 Short Leads, IPak, TO-251AA131 W20.5 mΩ @ 4.5 V6.22mmTO-251312 ns3 nsCompliantMOSFET N-Channel, Metal OxideLogic Level Gate31W2.2V @ 250µA10nC @ 10V30V1000pF @ 15V30A (Tc)TubePG-TO251-3--------OptiMOSIPS135N03LGAKMA1 SP00078822015002 ns31 W3 ns增强3 nsN-Channel12 ns30 V1 Channel0.0205 Ω31 W30 V+/- 20 V30 A2.41mm6.73mmThrough Hole3PG-TO-251-3-116.73 x 6.22 x 2.41mmIPS135N03YGaNInfineon TechnologiesDC/DC Converter, SMPSSingle
IPS13N03LAG
IPS13N03LAG

MOSFET N-KANAL POWER MOS

Infineon Technologies

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IPS135N03LGXK
IPS135N03LGXK

Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251

Infineon Technologies AG

0-Through Hole±203030N175---13100013.5@10V2.3TO-2513-------------TO-251CompliantTabThrough Hole6.56.223------------------------------
IPS13N03LAGXK
IPS13N03LAGXK

Trans MOSFET N-CH 25V 30A 3-Pin(3+Tab) TO-251

Infineon Technologies AG

0-Through Hole±202530N175---14600012.8@10V2.3TO-2513-------------TO-251CompliantTabThrough Hole6.56.223------------------------------
IPS13N03LA G
IPS13N03LA G

MOSFET N-CH 25V 30A IPAK

Infineon Technologies

0-Through Hole-----1,50012.8 mOhm @ 30A, 10VTO-251-3 Short Leads, IPak, TO-251AA--------Lead free / RoHS CompliantMOSFET N-Channel, Metal OxideLogic Level Gate46W2V @ 20µA8.3nC @ 5V25V1043pF @ 15V30A (Tc)TubePG-TO251-3-------------------------------------
IPS135N03LGAKMA1
IPS135N03LGAKMA1

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies

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