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Toshiba Corporation
绝缘栅双极型晶体管和功率驱动器

Toshiba Corporation- 绝缘栅双极型晶体管和功率驱动器

东芝株式会社是一家日本跨国综合企业，总部位于东京港区，由芝浦制作所和东京电气于1939年合并成立，历史可追溯至1875年。核心业务涵盖半导体、存储解决方案、基础设施系统和数字解决方案等领域。在半导体领域，东芝提供分立器件、光电器件、模拟IC和微控制器等丰富产品线。重点产品系列包括光耦TLP系列、功率MOSFET（如SSM和DT系列）以及IGBT模块（如MG系列）。东芝还推出基于ARM的TXZ系列微控制器，用于嵌入式应用，以及面向工业和汽车市场的电机驱动IC。自1986年以来，东芝一直位居全球光电器件和分立半导体供应商第一位，行业地位显著。其技术优势体现在专有半导体工艺和高效功率器件上，如碳化硅（SiC）功率产品。东芝电子器件与存储事业群持续在物联网、汽车和数据中心等领域推动创新。凭借卓越的品质和可靠性传承，东芝成为全球电子制造商值得信赖的合作伙伴。

MODELS

绝缘栅双极型晶体管和功率驱动器 - 型号列表共 5 个型号

制造商零件编号	价格/库存	Supplier Package	Maximum Gate Emitter Voltage	Maximum Continuous Collector Current	EU RoHS	Maximum Operating Temperature	Channel Type	Maximum Collector Emitter Voltage	Maximum Power Dissipation	Minimum Operating Temperature	Pin Count	Transistor Type	DC Collector Current	Collector Emitter Voltage Vces	Power Dissipation Pd	Collector Emitter Voltage V(br)ceo	Transistor Case Style	No. of Pins	MSL	SVHC	Current Ic Continuous a Max	Power Dissipation Max	Pulsed Current Icm	Rise Time	Termination Type	Transistor Polarity	Voltage Vces	Weight (kg)	Tariff No.	Operating Temperature Min	Operating Temperature Max	Fall Time Typ	Operating Temperature Range	Package	Configuration	Maximum Collector Emitter Voltage	Maximum Continuous Collector Current	Maximum Gate Emitter Voltage	Mounting	Standard Package	Standard Package Name	Junction Temperature Tj Max	Junction to Case Thermal Resistance A	Pin Format
GT50J102 Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) toshiba	询价	TO-3P(LH)	±20	50	Not Compliant	150	N	600	200000	-55	3	:IGBT	:50A	:2.7V	:200W	:600V	:TO-3P	:3	:-	:No SVHC (20-Jun-2013)	:50A	:200W	:100A	:120ns	:Through Hole	:N Channel	:600V	0.00975	85412900	:-55°C	:150°C	:150ns	:-55°C to +150°C	3TO-3P(LH)	Single	600 V	50 A	±20 V	Through Hole	Trays	-	-	-	-
2 GT30J324 Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN toshiba	询价	TO-3PN	±20	30	Not Compliant	150	N	600	170000	-55	3	:IGBT	:30A	:2.45V	:170W	:600V	:TO-3P	:3	:-	:No SVHC (20-Jun-2013)	:30A	:170W	:60A	:70ns	:Through Hole	:N Channel	:600V	0.0046	85412900	:-55°C	:150°C	:50ns	:-55°C to +150°C	3TO-3PN	Single	600 V	30 A	±20 V	Through Hole	Rail / Tube	TO-3PN	:150°C	:0.735°C/W	-
2 GT50J325 Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) toshiba	询价	TO-3P(LH)	±20	50	Not Compliant	150	N	600	240000	-55	3	:IGBT	:50A	:2.45V	:240W	:600V	:TO-3P	:3	:-	:No SVHC (20-Jun-2013)	:50A	:240W	:100A	:70ns	:Through Hole	:N Channel	:600V	0.00975	85412900	:-55°C	:150°C	:50ns	:-55°C to +150°C	3TO-3P(LH)	Single	600 V	50 A	±20 V	Through Hole	Trays	-	:150°C	:0.521°C/W	-
2 GT25Q102 Trans IGBT Chip N-CH 1.2KV 25A 3-Pin TO-3P Toshiba	询价	TO-3P	±20	25	Not Compliant	150	N	1200	200000	-55	3	:IGBT	:25A	:2.7V	:200W	:1.2kV	:TO-3P	:3	:-	:No SVHC (20-Jun-2013)	:25A	:200W	:50A	:100ns	:Through Hole	:N Channel	:1.2kV	0.00975	85412900	:-55°C	:150°C	:160ns	:-55°C to +150°C	-	-	-	-	-	-	-	TO-3P	-	-	-
GT10Q101 Trans IGBT Chip N-CH 1.2KV 10A 3-Pin(3+Tab) TO-3PN Toshiba	询价	TO-3PN	±20	10	Not Compliant	150	N	1200	140000	-55	3	:IGBT	:10A	:2.7V	:140W	:1.2kV	:TO-3P	:3	:-	:No SVHC (20-Jun-2013)	:10A	:140W	:20A	:70ns	:Through Hole	:N Channel	:1.2kV	0.0046	85412900	-	-	-	-	-	-	-	-	-	-	-	TO-3PN	-	-	:GCE