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STMicroelectronics N.V.

STMicroelectronics N.V.- 晶体管(双极结型晶体管与可编程单结晶体管)

意法半导体公司(STMicroelectronics N.V.)成立于1987年,由意大利SGS微电子公司和法国汤姆逊半导体公司合并而成。公司总部位于瑞士日内瓦,并于1994年上市,在纽约证券交易所、泛欧巴黎证券交易所和米兰证券交易所挂牌交易。ST是全球最大的半导体公司之一,业务涵盖汽车、工业、个人电子和通信基础设施等领域。公司提供极为广泛的产品组合,核心产品包括微控制器(MCU)、模拟芯片、功率器件和传感器等。在MCU领域,STM32系列是业界最知名的32位微控制器,广泛应用于嵌入式系统。模拟产品方面,ST提供运算放大器、比较器和数据转换器,电源管理芯片包括各类电压调节器和电机驱动器。在功率器件上,ST拥有MOSFET、IGBT和碳化硅(SiC)等先进产品,支持高效能电源转换。传感器产品线包括MEMS加速度计、陀螺仪、环境传感器以及飞行时间(ToF)测距传感器。ST技术实力雄厚,拥有强大的研发和制造能力,在全球半导体市场中占据重要地位。根据营收排名,ST常年位列全球半导体前十,并在汽车IC、MEMS传感器和通用MCU等领域保持市场领先。

02
MODELS

晶体管(双极结型晶体管与可编程单结晶体管) - 型号列表342 个型号

Matchcode

Maximum Power Dissipation

Vce Saturation (Max) @ Ib, Ic

Power Dissipation Pd

Weight (kg)

Other Names

Minimum DC Current Gain

Maximum Collector Emitter Saturation Voltage

Maximum Power Dissipation

Supplier Device Package

Power - Max

Package / Case

DC Current Gain (hFE) (Min) @ Ic, Vce

DC Collector Current

Package

Maximum DC Collector Current

Current - Collector (Ic) (Max)

DC Current Gain hFE

Power Dissipation

Supplier Package

MOQ

Collector- Emitter Voltage VCEO Max

Collector Emitter Voltage V(br)ceo

Current Ic Continuous a Max

Maximum Collector Emitter Voltage

Voltage - Collector Emitter Breakdown (Max)

Maximum Operating Temperature

Package Type

DC Collector/Base Gain hfe Min

Continuous Collector Current Ic Max

Hfe Min

Power Dissipation Ptot Max

Gross weight

Collector Current (DC) (Max)

Collector Current (DC)

Maximum Collector Emitter Voltage

Operating Temperature

Maximum DC Collector Current

Maximum Collector Base Voltage

Standard Package Name

Standard Leadtime

Current - Collector Cutoff (Max)

Minimum Operating Temperature

Collector- Base Voltage VCBO

Continuous Collector Current

Current Ic hFE

Operating Temp Range

PackageType

PowerDissipation

Maximum Operating Temperature

P(tot)

Dimensions

Height

Length

Collector-Emitter Saturation Voltage

Transistor Case Style

Case

Collective package [pcs]

DC Current Gain

Device Marking

Operating Temperature Range

Voltage Vcbo

Pin Count

Maximum Collector Base Voltage

Standard Package

Minimum Operating Temperature

Unit Pack

Transistor Type

Configuration

Width

Factory Pack Quantity

Emitter- Base Voltage VEBO

Operating Temperature Max

No. of Pins

Collector Emitter Voltage Vces

Tariff No.

Power

Collector-emitter voltage

Collector current

spg

Collector-Emitter Voltage

Number of Elements

Operating Temperature Min

DC Current Gain hFE Max

Gain Bandwidth Product fT

DC Current Gain (Min)

Number of Elements per Chip

Package Length

Package Height

Packaging

Operating Temperature Classification

Base Number

IC Generic Number

Input Type

Package/Case

Frequency - Transition

Collector-Base Voltage

Frequency

Gain Bandwidth ft Typ

Current,Collector

Current,Gain

Voltage,Breakdown,CollectortoEmitter

Voltage,CollectortoEmitter

Voltage,CollectortoEmitter,Saturation

I(C)

Type

Package Width

PCB

Maximum Emitter Base Voltage

Polarisation

Maximum Emitter Base Voltage

Product Category

Transistor Polarity

No. of Transistors

Number of channels

Input Voltage Max

Comparator Type

Top(max)

Channels

Icc/Channel

Supply Voltage Range

Maximum Operating Frequency

Maximum Transition Frequency

Emitter-Base Voltage

Resistance,Thermal,JunctiontoCase

Voltage,CollectortoBase

Voltage,EmittertoBase

Current gain

Transition Frequency ft

Mounting

Lead Shape

I(C) max

V(CB0) I(E)=0

V(CE) sat

I(B) sat

V(CE0) I(B)=0

Mounting Type

rohs

Maximum Base Emitter Saturation Voltage

Mounting Style

MSL

Termination Type

Transistor type

Peak DC Collector Current

Maximum Collector Emitter Saturation Voltage

Maximum Continuous DC Collector Current

Technology

Polarity

Module Configuration

No. of Channels

DriverType

Integrated circuit type

Maximum Continuous Collector Current

Input Voltage Min

Supply Voltage Max

Supply Voltage Min

Number of Channels per Chip

Maximum Single Supply Voltage

Maximum Dual Supply Voltage

Number of Channels

Supply Voltage - Max

Supply Voltage - Min

Offset Voltage (Max)

Supply Current (Max)

Manufacturer Type

Maximum Dual Supply Voltage

Maximum Supply Current

Maximum Single Supply Voltage

Maximum Input Offset Voltage

Input bias

Vcc(max)

Footprint

Top(min)

Number of Elements

Voltage - Input Offset (Max)

Current - Output (Typ)

Voltage - Supply, Single/Dual (±)

Offset Voltage - Max

Supply Current - Max

Input Offset Voltage

Single Supply Voltage (Max)

Dual Supply Voltage (Max)

Supply Current

No. of Comparators

Amplifier Case Style

IC Output Type

Input Offset Voltage Max

No.Comparators

Current,Supply

NumberofAmplifiers

Temperature,Operating,Range

Voltage,Saturation,CollectortoEmitter

Frequency (Max)

Gain Bandwidth ft Min

V(CEO)

V(CBO)

制造商零件编号价格/库存TypePin CountStandard PackagePackagingMounting TypeSupplier Device PackagePackage / CaserohsNo. of PinsWeight (kg)Tariff No.PackageMountingMaximum Operating TemperatureMinimum Operating TemperatureOperating Temperature MaxSVHCMinimum Operating Temperature EU RoHSSupplier PackageStandard Package NameMaximum Operating Temperature Package TypeLead ShapeUnit PackMOQProduct CategoryRoHSMSLMounting StyleOperating Temp RangeNumber of ElementsOperating Temperature ClassificationRad HardenedOperating TemperatureMaximum Power DissipationNumber of Elements per ChipTransistor TypeConfigurationTransistor PolarityCollector Emitter Voltage V(br)ceoDC Collector CurrentMaximum Collector Emitter VoltageMaximum Collector Emitter Saturation VoltageMatchcodeStandard LeadtimeLeadfree Defin.Current - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Factory Pack QuantityDC Current Gain hFETransistor Case StyleCurrent Ic Continuous a MaxMaximum DC Collector CurrentMaximum Collector Emitter Voltage Power - MaxDC Current Gain (hFE) (Min) @ Ic, VcePower Dissipation PdMinimum DC Current GainCollector-Emitter Saturation VoltageCollector- Emitter Voltage VCEO MaxOther NamesOperating Temperature MinPower DissipationMaximum Power Dissipation Collector Current (DC) (Max)Collector-Emitter VoltageCollector Current (DC)Operating Temperature RangePCBPackage Height DimensionsHeightLengthWidthDC Collector/Base Gain hfe MinTermination TypeMaximum DC Collector Current Package Width Package Length Maximum Emitter Base Voltage Emitter- Base Voltage VEBOCollector- Base Voltage VCBOContinuous Collector CurrentCollector Emitter Voltage VcesHfe MinCasePolarityNo. of TransistorsMaximum Collector Base Voltage Current - Collector Cutoff (Max)Continuous Collector Current Ic MaxCurrent Ic hFEPower Dissipation Ptot MaxGross weightCollective package [pcs]AutomotiveDC Current GainMaximum Collector Base VoltagePolarisationCategoryMaximum Emitter Base VoltageMultiplicityspgChannelsPackageTypePowerDissipationVoltage VcboP(tot)TechnologyDevice MarkingPackage/CaseCollector-Base VoltageEmitter-Base VoltageDC Current Gain (Min)TabPowerCollector-emitter voltageCollector currentPeak DC Collector CurrentNumber of Channels per ChipOutput TypeTypical Response TimeTypical Voltage GainMinimum Single Supply VoltageMaximum Single Supply VoltageMinimum Dual Supply VoltageMaximum Dual Supply VoltageComparator TypeNumber of ChannelsSupply Voltage - MaxSupply Voltage - MinOffset Voltage (Max)Supply Current (Max)Response TimeOutput Current (Typ)Manufacturer TypeTypical Single Supply Voltage Rail to RailTypical Response Time Maximum Dual Supply Voltage Maximum Input Bias Current Typical Voltage Gain Power Supply TypeMaximum Single Supply Voltage Minimum Dual Supply Voltage Typical Dual Supply Voltage Maximum Input Offset Voltage Minimum Single Supply Voltage Response timeR2RVcc(min)Input biasVcc(max)Top(max)Input offsetTop(min)Icc/ChannelNumber of ElementsCurrent - Input Bias (Max)Current - Quiescent (Max)Voltage - Input Offset (Max)Current - Output (Typ)Voltage - Supply, Single/Dual (±)Input Bias Current (Typ)Input Offset VoltagePower Supply RequirementDual Supply Voltage (Min)Single Supply Voltage (Min)Single Supply Voltage (Max)Single Supply Voltage (Typ)Dual Supply Voltage (Max)Voltage Gain in dBSupply CurrentNo. of ComparatorsSupply Voltage RangeAmplifier Case StyleIC Output TypeOutput CompatibilityNo.ComparatorsDC Current Gain hFE MaxGain Bandwidth Product fTTransistor typeMaximum Collector Emitter Saturation Voltage Maximum Continuous DC Collector Current Base NumberIC Generic NumberInput TypeModule ConfigurationNo. of ChannelsOutput Current MaxOutput Voltage MaxIntegrated circuit typeNumber of channelsSupply Voltage MaxSupply Voltage MinOptimisationOffset Voltage - MaxSupply Current - MaxOutput Current - TypFrequency - TransitionFrequencyGain Bandwidth ft TypCurrent,CollectorCurrent,GainPrimaryTypeVoltage,Breakdown,CollectortoEmitterVoltage,CollectortoEmitterVoltage,CollectortoEmitter,SaturationVoltage,EmittertoBaseI(C)V(CEO)Current gainV(CBO)Maximum Base Emitter Saturation VoltageOL Detec.ad OFFOL DetectionOL Detec.ad ONDriverTypeOutput currentOutput voltageKind of integrated circuitMaximum Continuous Collector CurrentInput Voltage MaxMaximum Supply Current Output stageFootprintInput Offset Voltage MaxMaximum Operating FrequencyMaximum Transition Frequency Full Power Rating TemperatureGain Bandwidth ft MinResistance,Thermal,JunctiontoCaseVoltage,CollectortoBaseTransition Frequency ftI(C) maxV(CB0) I(E)=0V(CE) satI(B) satV(CE0) I(B)=0Input Voltage MinAmplifierTypeCurrent,InputBiasCurrent,InputOffsetCurrent,OutputCurrent,SupplyNumberofAmplifiersTemperature,Operating,RangeVoltage,GainVoltage,InputVoltage,InputOffsetVoltage,SupplyVoltage,Saturation,CollectortoEmitterV(op,max)V(op,min)ApplicationFrequency (Max)Application CodeDELETEDNumber of Drivers/ReceiversTemperatureRange,Junction,OperatingVoltage,Sustaining,CollectortoEmitterDC Current Gain Max (hfe)Package Diameter RF Transistor CaseContinuous Collector Current IcCurrent,BaseCurrent,CollectorCutoffGain,DCCurrent,MaximumGain,DCCurrent,MinimumTransistorTypeAlternate Case StyleCurrent Gain Hfe MaxCurrent Ic @ Vce SatHfe TypStandard Pack:ComparatorTypeCurrent,Offset,InputImpedance,ThermalOutputTypeResponseTimeTemperature,Operating,MaximumTemperature,Operating,MinimumTemperature,StorageVoltage,DifferentialInputVoltage,Offset,InputVoltage,SaturationKind of comparatorSupply voltageDelay time
BUL39D
7
BUL39D

Trans GP BJT NPN 450V 4A 3-Pin(3+Tab) TO-220 Tube

stmicroelectronics

询价NPN3Rail / TubeTubeThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant:30.002854129003TO-220Through Hole+150 °C-65 °C:150°C:No SVHC (20-Jun-2013)-65CompliantTO-220TO-220150TO-220Through Hole503000Transistors Bipolar - BJTRoHS Compliant:-Through Hole-----65 to 150 °C70000 mW1NPNSingleNPN:450V:2.5A450 V0.5@0.2A@1A|1.1@0.5A@2.5A VBUL39D15 weeksRoHS-conform4A1.1V @ 500mA, 2.5A450V50:10:TO-220:2.5A4 A45070W10 @ 10mA, 5V:70W4@5A@10V|10@10mA@5V1.1 V450 V---70000----39.15(Max)9.15 x 10.4 x 4.6mm9.15mm10.4mm4.6mm4:Through Hole44.6(Max)10.4(Max)99 V800 V4 A:500mV:10TO220--850100µA:4A:10mA:70W1.38 g400--850 VNPNBipolar Power9 V1400----70W------Tab70W450V4A---------------------------------------------------------------NPN-------------------------------1.3 V--------------------4A850V1.1V0.5A450V--------------------------------------------------
ULN2001A
9
ULN2001A

Trans Darlington NPN 50V 0.5A 16-Pin PDIP

stmicroelectronics

询价NPN16Rail / TubeTubeThrough Hole16-DIP16-DIP (0.300", 7.62mm)Lead free / RoHS Compliant:160.0000018542319016PDIPThrough Hole+ 85 C- 20 C:85°C:No SVHC (20-Jun-2013)-40CompliantPDIPPDIP85PDIPThrough Hole255000Transistors DarlingtonRoHS Compliant:-Through Hole-20C to 85C7CommercialNo--77 NPN DarlingtonArray 7NPN:50V:500mA50 V1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA VULN2001A14 weeksRoHS-conform500mA1.6V @ 500µA, 350mA50V25:1000:DIP:500mA0.5 A50-1000 @ 350mA, 2V-1000@350mA@2V1.1 V50 V497-2340-5:-20°C--0.5 A50 V0.5 A:-20°C to +85°C------1000----------DIP16NPN:7-----5 mg25NO1000----125-----DIP16:ULN2001A--------0.5 A---------------------------------------------------------------1.1@250uA@100mA|1.3@350uA@200mA|1...0.5:2001:2001:CMOS, DTL, PMOS, TTL:Seven:7:500mA:50Vdriver7---------------------NY/N/NA/NANNANY/N/NA/NANNY/N/NA/NANArray500mA50Vdarlington--------------------------------------------------------------------
ULN2002A
8
ULN2002A

Trans Darlington NPN 50V 0.5A 16-Pin PDIP

stmicroelectronics

询价NPN16Rail / TubeTubeThrough Hole16-DIP16-DIP (0.300", 7.62mm)Lead free / RoHS Compliant:160.0000018542319016PDIPThrough Hole+85 °C-20 °C:85°C:No SVHC (20-Jun-2013)-40CompliantPDIPPDIP85PDIPThrough Hole--Transistors DarlingtonRoHS Compliant:-Through Hole-20C to 85C7CommercialNo-40°C ~ 85°C-7NPNArray 7NPN:50V:500mA50 V1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V------25:1000:DIP:500mA0.5 A50---1000@350mA@2V1.1 V50 V-:-20°C--0.5 A50 V0.5 A:-20°C to +85°C--20 x 7.1 x 5.1mm5.1mm20mm7.1mm------------NPN:7--------1000------------:ULN2002A16-DIP (0.300", 7.62mm)-------0.5 A---------------------------------------------------------------1.1@250uA@100mA|1.3@350uA@200mA|1...0.5:2002:2002:PMOS, 14V / 25V:Seven:7:500mA:50V--:25V:14V----------------------Darlington---0.5 A:25V----------------:14V------------------6/0------------------------------
LM2901D
6
LM2901D

Comparator Quad ±16V/32V 14-Pin SO Tube

stmicroelectronics

询价General Purpose14Rail / TubeTubeSurface Mount14-SOSO-14Lead free / RoHS Compliant:140.00018542330014SOSurface Mount+ 125 C- 40 C:125°C:No SVHC (20-Jun-2013)-40CompliantSOICSOIC125SOGull-wing5050Comparator ICsRoHS Compliant-SMD/SMT-40C to 125C4AutomotiveNo-40 to 125 °C830 mW--------LM2901D16 weeksRoHS-conform---50------------:-40°C830 W----:-40°C to +125°C141.65(Max)-----:SMD-4(Max)8.75(Max)----------------NO-------4----Bipolar-14-SOIC (0.154", 3.90mm Width)--------4Open Collector1.3 us106.02 dB2 V32 V±1 V±16 VMagnitude432 V2 V7 mV2 mA1.3 us0.1 nALow Power Comparator3|5|9|12|15|18|24|28No1.3±160.25@5V106.02Single|Dual32±1±3|±5|±9|±12|±157@5V21.3µsNO2V25nA31V125°C1mV-40°C275µA40.25µA @ 5V2.5mA7mV @ 5V16mA @ 5V2 V ~ 32 V, ±1 V ~ 16 V250 nA7 mVSingle/Dual�1 V2 V32 V3/5/9/12/15/18/24/28 V�16 V106.02 dB2 mA:4:± 1V to ± 16V:SOIC:CMOS, DTL, ECL, MOS, TTL:CMOS, DTL, ECL, MOS, TTL:4--------------:36V:2VLowPower7 mV2 mA0.1 nA------------------------2@5VOpenCollec55mm²:7mV--------------------------------------------------------------
LM339DT
7
LM339DT

Comparator Quad ±16V/32V 14-Pin SO T/R

stmicroelectronics

询价General Purpose14Tape & ReelReelSurface Mount14-SOSO-14Lead free / RoHS Compliant:140.0038542330014SOSurface Mount+ 70 C0 C:70°C:No SVHC (20-Jun-2013)0CompliantSOICSOIC70SOGull-wing25002500Comparator ICsRoHS Compliant:MSL 1 - UnlimitedSMD/SMT0C to 70C4CommercialNo0 to 70 °C830 mW--------LM339DT16 weeksRoHS-conform---2500-----------497-1588-2:0°C830 W----:0°C to +70°C141.65(Max)-------4(Max)8.75(Max)----------------NO-------4SO-14830mW--Bipolar-14-SOIC (0.154", 3.90mm Width)--------4Open Collector1.3 us106.02 dB2 V32 V±1 V±16 V:Precision Voltage436 V2 V5 mV2 mA1.3 us0.1 nALow Power Comparator3|5|9|12|15|18|24|28No1.3±160.25@5V106.02Single|Dual32±1±3|±5|±9|±12|±155@30V21.3µsNO2V0.025nA36V70°C1mV0°C0.1µA40.25µA @ 5V2.5mA5mV @ 30V16mA @ 5V2 V ~ 32 V, ±1 V ~ 16 V250 nA5 mVSingle/Dual�1 V2 V32 V3/5/9/12/15/18/24/28 V�16 V106.02 dB2 mA:4:2V to 36V:SOIC:Open Collector:CMOS, DTL, ECL, MOS, TTL:4----------------LowPower--------------------------------------------Comparator25nA5nA0.1nA1.3mAQuad0to70°C200V/mV-0.3to36V1mV±1to±18V--------------------------------------
ULN2075B
7
ULN2075B

Trans Darlington NPN 80V 1.75A 16-Pin Power PDIP

stmicroelectronics

询价NPN16Rail / TubeTubeThrough Hole16-PowerDIP (20x7.10)16-PowerDIP (0.300", 7.62mm)Contains lead / RoHS non-compliant:160.0028541210016Power PDIPThrough Hole+85 °C-20 °C:85°C--20CompliantPower PDIPPDIP85Power PDIPThrough Hole251000Transistors DarlingtonRoHS Compliant-Through Hole-20C to 85C4CommercialNo--44 NPN Darlington (Quad)QuadNPN:80V:1.5A80 V1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V---1.75A1.5V @ 2.25mA, 1.5A80V25---1.75 A801W-:1W--80 V497-3084-5:-20°C4.3 W43001.75 A80 V1.75 A---20 x 7.1 x 5.1mm5.1mm20mm7.1mm--------1.5 A---NPN-----------------Powerdip1W(Max.)@70°C------------1.75 A---------------------------------------------------------------1.1@625uA@500mA|1.2@935uA@750mA|1...1.75---------------------------------Darlington---1.75 A-----------------------------1.1V(Max.)@500mA--------20to+85°C50V(Min.)@100mA----------------------------
ULN2803A
8
ULN2803A

Trans Darlington NPN 50V 0.5A 18-Pin PDIP Tube

stmicroelectronics

询价NPN18Rail / TubeTubeThrough Hole18-DIP18-DIP (0.300", 7.62mm)Lead free / RoHS Compliant:180.0028542319018PDIPThrough Hole--:85°C:No SVHC (20-Jun-2013)-20CompliantPDIPPDIP85PDIPThrough Hole2020--:---20C to 85C8CommercialNo--88 NPN DarlingtonOctal Common Emitter:NPN:50V:500mA50 V1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA VULN2803A13 weeksRoHS-conform500mA1.6V @ 500µA, 350mA50V-:1000:DIP:500mA-502.25W1000 @ 350mA, 2V:2.25W-1.1 V-497-2356-5:-20°C-22500.5 A50 V0.5 A:-20°C to +85°C-----------------DIP18NPN:8-----2.44 g1000------110000.5-----:ULN2803A--------0.5 A---------------------------------------------------------------1.1@250uA@100mA|1.3@350uA@200mA|1...0.5:2803:2803:CMOS, TTL:Eight:8:500mA:50Vdriver8---------------------NY/N/NA/NANNANY/N/NA/NANNY/N/NA/NAN-500mA50Vdarlington-:5V-----------------------------85V-20V8----------------------------------
ULN2804A
9
ULN2804A

Trans Darlington NPN 50V 0.5A 18-Pin PDIP Tube

stmicroelectronics

询价NPN18Rail / TubeTubeThrough Hole18-DIP18-DIP (0.300", 7.62mm)Lead free / RoHS Compliant:180.0018542319018PDIPThrough Hole+85 °C-20 °C:85°C:No SVHC (20-Jun-2013)-----PDIP-203000--:---20C to 85C8CommercialNo--88 NPN DarlingtonOctal:NPN:50V:500mA50 V1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA VULN2804A13 weeksRoHS-conform500mA1.6V @ 500µA, 350mA50V-:1000:DIP:500mA--2.25W1000 @ 350mA, 2V:2.25W-1.1 V-497-2357-5:-20°C--0.5 A50 V0.5 A:-20°C to +85°C--23.24 x 7.1 x 3.93mm3.93mm23.24mm7.1mm-----------DIP18NPN:8-----2.3 g400------14000.5-----:ULN2804A--------0.5 A-----------------------------------------------------------------:2804:2804:CMOS:Eight:8:500mA:50Vdriver8---------------------NY/N/NA/NANNANY/N/NA/NANNY/N/NA/NAN-500mA50Vdarlington0.5 A:15V----------------:6V------------85V-20V8------:1000---------------------------
2N5416
6
2N5416

Trans GP BJT PNP 300V 1A 3-Pin TO-39 Bag

stmicroelectronics

询价PNP3BagBagThrough HoleTO-39TO-205AD, TO-39-3 Metal CanLead free / RoHS Compliant:30.0024854129003TO-39Through Hole+200 °C-65 °C-:No SVHC (20-Jun-2013)-65CompliantTO-39TO-205-AF200TO-39Through Hole100800Transistors Bipolar - BJTRoHS Compliant:-Through Hole-65C to 200C1MilitaryNo-65 to 200 °C1000 mW1PNPSinglePNP:300V:-1A300 V2.5@5mA@50mA V---1A2.5V @ 5mA, 50mA300V100:30:TO-39:1A1 A3001W30 @ 50mA, 10V:10W30@50mA@10V- 2.5 V- 300 V497-2596-5-1 W10001 A300 V1 A-36.6(Max)6.6 x 9.4 x 9.4mm6.6mm9.4mm9.4mm30-1--6- 6 V350 V- 1 A-:30TO5PNP:135050µA:1A:50mA:10W1.4 g400-30350 VbipolarBipolar Power6 V1400-TO-3910W:350V--:2N5416-350 V6 V30-10W350V1A-------------------------------------------------------------12015 MHzPNP-----------------15MHz15 MHz:15MHz-1A120Si-300V-300V-2.5V-6V------------------15(Min) MHz15(Min):25°C:15MHz17.5°C/W-350V-------------------2.5V---15 MHz------9.4(Max):TO-39:1A-0.5A-50μA12030PNP-------------------
TIP42C
7
TIP42C

Trans GP BJT PNP 100V 6A 3-Pin(3+Tab) TO-220 Tube

stmicroelectronics

询价PNP3Rail / TubeTubeThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant:30.002854129003TO-220Through Hole+150 °C-65 °C:150°C:No SVHC (20-Jun-2013)-65CompliantTO-220TO-220150TO-220Through Hole5050--:---65C to 150C1MilitaryNo-65 to 150 °C65000 mW1PNPSinglePNP:100V:6A100 V1.5@0.6A@6A VTIP42C12 weeksRoHS-conform6A1.5V @ 600mA, 6A100V-:75:TO-220:6A6 A10065W15 @ 3A, 4V:65W30@300mA@4V|15@3A@4V--497-2629-5-65 W650006 A100 V6 A-39.15(Max)9.15 x 10.4 x 4.6mm9.15mm10.4mm4.6mm--64.6(Max)10.4(Max)5---:-1.5V:30TO220PNP:1100700µA:6A:300mA:65W2.68 g750NO30100 VPNPBipolar Power5 V1750-TO-22065W:100V65W---100 V5 V30Tab65W115V6A---------------------------------------------------------------PNP---------------------6A75Si-100V-100V-1.5V-5V10A100V30100V----------------:25°C:3MHz--100V--------------------------------------------------------
BD139
8
BD139

Trans GP BJT NPN 80V 3A 3-Pin(3+Tab) SOT-32 Tube

stmicroelectronics

询价NPN3Rail / TubeTubeThrough HoleSOT-32-3TO-225AA, TO-126-3Lead free / RoHS Compliant:30.00064854129003SOT-32Through Hole+150 °C-65 °C:150°C:No SVHC (20-Jun-2013)-65CompliantSOT-32TO-126150SOT-32Through Hole5050Transistors Bipolar - BJTRoHS Compliant:-SMD/SMT-65C to 150C1MilitaryNo-65 to 150 °C1250 mW1NPNSingleNPN:80V:1.5A80 V0.5@0.05A@0.5A VBD13912 weeksRoHS-conform1.5A500mV @ 50mA, 500mA80V50:250:SOT-32:1A3 A801.25W40 @ 150mA, 2V:1.25W25@5mA@2V|25@500mA@2V|40@150mA@2V- 0.5 V, + 0.5 V80 V--1.25 W12503 A80 V3 A---10.8 x 7.8 x 2.7mm10.8mm7.8mm2.7mm40:Through Hole3--55 V80 V1.5 A:500mV:40TO126NPN:180-:1.5A:150mA:12.5W1.37 g2000-2580 VNPNBipolar Power5 V12000-SOT-3212.5W:80V12.5W-:BD139-80 V5 V25-12W80V1.5A-------------------------------------------------------------250-NPN------------------50MHz-1.5A250Si80V80V0.5V5V1.5A80V4080V----------------:25°C-10°C/W80V--------------------------------------------------------
LM2903D
7
LM2903D

Comparator Dual ±18V/36V 8-Pin SO N

stmicroelectronics

询价General Purpose8Rail / TubeTubeSurface Mount8-SOSO-8Lead free / RoHS Compliant:80.01854233008SO NSurface Mount+ 125 C- 40 C:125°C:No SVHC (20-Jun-2013)-40CompliantSO NSOIC125SO NGull-wing100100Comparator ICsRoHS Compliant-SMD/SMT-40C to 125C2AutomotiveNo-40 to 125 °C710 mW--------LM2903D16 weeksRoHS-conform---100------------:-40°C830 W----:-40°C to +125°C81.65(Max)-----:SMD-4(Max)5(Max)----------------NO-------2----Bipolar-8-SOIC (0.154", 3.90mm Width)--------2Open Collector1.3 us106.02 dB2 V36 V±1 V±18 V:Low Power236 V18 V7 mV1 mA1.3 us0.1 nAVoltage Comparator3|5|9|12|15|18|24|28No1.3±180.25@5V106.02Single|Dual36±1±3|±5|±9|±12|±157@5V21.3µsNO2V25nA36V125°C1mV-40°C400µA20.25µA @ 5V2.5mA7mV @ 5V16mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V250 nA7 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mA:2:± 1V to ± 18V:SOIC:CMOS, DTL, ECL, MOS, TTL:CMOS, DTL, ECL, MOS, TTL:2--------------:36V:2VLowPower7 mV1 mA0.1 nA------------------------1@5VOpenCollec31mm²:7mV--------------------------------------------------------------
BD534
3
BD534

Trans GP BJT PNP 45V 8A 3-Pin(3+Tab) TO-220 Tube

stmicroelectronics

询价PNP3Rail / TubeTubeThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant:30.002854129003TO-220Through Hole+ 150 C- 65 C:150°C:No SVHC (20-Jun-2013)-65CompliantTO-220TO-220150-Through Hole--Transistors Bipolar - BJTRoHS Compliant:-Through Hole-----65 to 150 °C50000 mW1PNPSinglePNP:45V:-6A45 V0.8@0.2A@2A V---8A800mV @ 600mA, 6A45V-:40:TO-220:-6A8 A4550W25 @ 2A, 2V:50W20@10mA@5V|25@2A@2V0.8 V45 V---50000----39.15(Max)----20:Through Hole84.6(Max)10.4(Max)55 V45 V8 A:800mV:25--:145100µA:8A:2A:50W-------------:45V-------Tab-----------------------------------------------------------------12 MHz-------------------------------------------------:3MHz-------------------------:GP--------------------------------
BD711
5
BD711

Trans GP BJT NPN 100V 12A 3-Pin(3+Tab) TO-220 Tube

stmicroelectronics

询价NPN3Rail / TubeTubeThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant:30.002854129003TO-220Through Hole+150 °C-65 °C:150°C:No SVHC (20-Jun-2013)-----TO-220-5050Transistors Bipolar - BJTRoHS Compliant:-Through Hole-----65 to 150 °C75000 mW1NPNSinglePNP:100V:12A100 V1@0.4A@4A VBD711101 weeksRoHS-conform12A1V @ 400mA, 4A100V-:120:TO-220:4A12 A-75W15 @ 4A, 4V:75W40@0.5A@2V|15@4A@4V|8(Typ)@10A@4V1 V100 V497-6963-5---------9.15 x 10.4 x 4.6mm9.15mm10.4mm4.6mm40:Through Hole----5 V100 V12 A:1V-TO220-:1-100mA:12A:500mA:75W--NO-100 VNPNBipolar Power5 V-----:100V75W-------75W100V12A-------------------------------------------------------------4003 MHz------------------3MHz3MHz:3MHz-------12A100V8100V--------------3(Min) MHz-----:3MHz----------------------:GP-------------:SOT-78B:400:4A:120---------------
MJD44H11T4
7
MJD44H11T4

Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) DPAK T/R

stmicroelectronics

询价NPN3Cut TapeTape and ReelSurface MountD-PakTO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS Compliant:30.00195854129003DPAKSurface Mount+150 °C-55 °C:150°C:No SVHC (20-Jun-2013)-55CompliantDPAKDPAK150DPAKGull-wing25002500Transistors Bipolar - BJTRoHS Compliant:MSL 1 - UnlimitedSMD/SMT-55C to 150C1MilitaryNo-55 to 150 °C20000 mW1NPNSingleNPN:80V:10A80 V1@0.4A@8A VMJD44H11T412 weeksRoHS-conform8A1V @ 400mA, 8A80V2500:60:TO-252:8A8 A8020W40 @ 4A, 1V:20W60@2A@1V|40@4A@1V1 V80 V497-2504-2:-55°C20 W200008 A80 V8 A:-55°C to +150°C--2.4 x 6.6 x 6.2mm2.4mm6.6mm6.2mm60:SMD8--55 V80 V8 A:1V:60-PNP--10µA------6080 VNPNBipolar Power5 V---TO-25220W-20W---80 V5 V60-----------------------------------------------------------------------------------------8A60Si-80V-80V-1V-5V8A80V4080V1.5 V-----------------6.25°C/W------------------------------------------2,500--------------
2N5195
5
2N5195

Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) SOT-32 Tube

stmicroelectronics

询价PNP3Rail / TubeTubeThrough HoleSOT-32-3TO-225AA, TO-126-3Lead free / RoHS Compliant:30.00068854121003SOT-32Through Hole+ 150 C- 65 C:150°C:No SVHC (20-Jun-2013)-65CompliantSOT-32TO-126150SOT-32Through Hole502000Transistors Bipolar - BJTRoHS Compliant:-SMD/SMT-65C to 150C1MilitaryNo-65 to 150 °C40000 mW1PNPSinglePNP:-80V:4A80 V0.6@0.15A@1.5A|1.2@1A@4A V---4A1.2V @ 1A, 4A80V2000:20:SOT-32:4A4 A8040W20 @ 1.5A, 2V:40W20@1.5A@2V|7@4A@2V- 1.2 V- 80 V497-2585-5:-65°C40 W400004 A80 V4 A:-65°C to +150°C310.8(Max)----20:Through Hole42.7(Max)7.8(Max)5- 5 V- 80 V- 4 A:80V:7---801mA------20--------------80 V5 V20Tab----------------------------------------------------------------802 MHz------------------2MHz2 MHz:2MHz-------------------------2(Min) MHz2(Min)----:2MHz---------------------2 MHz-Compliant-------------------------------
LM293N
6
LM293N

Comparator Dual ±18V/36V 8-Pin PDIP

stmicroelectronics

询价General Purpose8Rail / TubeTubeThrough Hole8-DIPPDIP-8Lead free / RoHS Compliant:80.04854110008PDIPThrough Hole+ 105 C- 40 C:105°C:No SVHC (20-Jun-2013)-40CompliantPDIPPDIP105PDIPThrough Hole5050Comparator ICsRoHS Compliant:-Through Hole-40C to 105C2IndustrialNo-40 to 105 °C1250 mW--------LM293N TD45 weeksRoHS-conform---2000-----------497-1567-5:-40°C1250 W----:-40°C to +105°C-------:Through Hole---------DIP8-------0 mg350NO-------2DIP-81250mW--Bipolar-8-DIP (0.300", 7.62mm)--------2Open Collector1.3 us106.02 dB2 V36 V±1 V±18 V:Low Power236 V2 V5 mV1 mA1.3 us0.1 nAVoltage Comparator3|5|9|12|15|18|24|28No1.3±180.25@5V106.02Single|Dual36±1±3|±5|±9|±12|±155@30V21.3µsNO2V0.025nA36V105°C1mV-40°C0.1µA20.25µA @ 5V2.5mA5mV @ 30V18mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V250 nA5 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mA:2:± 1V to ± 18V:DIP:CMOS, DTL, ECL, MOS, TTL:CMOS, DTL, ECL, MOS, TTL:2------------comparator2:36V:2V-5 mV1 mA0.1 nA---------------------------:5mV-------------Comparator25nA5nA0.1nA1mADual-40to105°C200V/mV-0.3to36V1mV±1to±18V------------------------Voltage5nA85°C/WTTL,DTL,ECL,MOS,CMOS1.3μs105°C-40°C-65to150°C±36V1mV250Vlow-power2...36V DC1.3µs
2STA1695
5
2STA1695

Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3P Tube

stmicroelectronics

询价PNP330TubeThrough HoleTO-3PTO-3P-3, SC-65-3Lead free / RoHS Compliant:30.0114385412900--+ 150 C- 65 C:150°C:No SVHC (20-Jun-2013)-65CompliantTO-3PTO-3P150----Transistors Bipolar - BJTRoHS Compliant:-------100000 mW1PNPSinglePNP:140V:7A-----10A700mV @ 700mA, 7A140V-:70:TO-3P:7A10 A140100W70 @ 3A, 4V:100W70@3A@4V|50@5A@4V-140 V---100000----------70:Through Hole10--66 V140 V-:500mV:70---140-:10A:3A:100W-------------:140V-------------------------------------------------------------------------20 MHz------------------20MHz-:20MHz--------------------------20(Typ)----:20MHz-------------------------------------------------------
LM2903DT
8
LM2903DT

Comparator Dual ±18V/36V 8-Pin SO N T/R

stmicroelectronics

询价General Purpose8Tape & ReelReelSurface Mount8-SOSO-8Lead free / RoHS Compliant:80.003854233008SO NSurface Mount+ 125 C- 40 C:125°C:No SVHC (20-Jun-2013)-40CompliantSO NSOIC125SO NGull-wing25002500Comparator ICsRoHS Compliant:MSL 1 - UnlimitedSMD/SMT-40C to 125C2AutomotiveNo-40 to 125 °C710 mW--------LM2903DT16 weeksRoHS-conform---2500-----------497-1559-2:-40°C710 W----:-40°C to +125°C81.65(Max)-------4(Max)5(Max)----------------NO-------2----Bipolar-8-SOIC (0.154", 3.90mm Width)--------2Open Collector1.3 us106.02 dB2 V36 V±1 V±18 V:Low Power236 V18 V7 mV1 mA1.3 us0.1 nAVoltage Comparator3|5|9|12|15|18|24|28No1.3±180.25@5V106.02Single|Dual36±1±3|±5|±9|±12|±157@5V21.3µsNO2V25nA36V125°C1mV-40°C400µA20.25µA @ 5V2.5mA7mV @ 5V16mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V250 nA7 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mA:2:2V to 36V:SOIC:Open Collector:CMOS, DTL, ECL, MOS, TTL:2----------------LowPower7 mV1 mA0.1 nA------------------------1@5VOpenCollec31mm²-------------------------------Compliant-------------------------------
BUL138
7
BUL138

Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220 Tube

stmicroelectronics

询价NPN3Rail / TubeTubeThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant:30.002854129003TO-220Through Hole+150 °C-65 °C:150°C:No SVHC (20-Jun-2013)-65CompliantTO-220TO-220150TO-220Through Hole502000Transistors Bipolar - BJTRoHS Compliant:-Through Hole-65C to 150C1MilitaryNo-65 to 150 °C80000 mW1NPNSingleNPN:400V:5A400 V0.5@0.2A@1A|0.7@0.4A@2A|1@0.6A@3A|1@1A@4A VBUL13815 weeksRoHS-conform5A700mV @ 1A, 5A400V50:10:TO-220:5A5 A40080W8 @ 2A, 5V:80W8@2A@5V|10@10mA@5V1 V400 V--80 W800005 A400 V5 A-39.15(Max)9.15 x 10.4 x 4.6mm9.15mm10.4mm4.6mm8-54.6(Max)10.4(Max)99 V800 V5 A:500mV:8---800250µA:5A:2A:80W---8800 VNPNBipolar Power9 V-----:800V80W---800 V9 V8Tab----------------------------------------------------------------40---------------------------------1.5 V--------------------5A800V1V1A400V--------------------------------------------------
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