Renesas Electronics Corporation- 场效应晶体管（FET）

瑞萨电子株式会社（Renesas Electronics Corporation）是一家全球领先的半导体制造商，总部位于日本东京。公司于2010年4月由NEC电子与瑞萨科技合并成立，融合了两家公司数十年的微电子技术积累。瑞萨电子专注于为汽车、工业、基础设施和物联网领域提供先进的半导体解决方案。核心产品线包括丰富的微控制器系列，如超低功耗的RL78、高性能的RX以及基于Arm Cortex-M内核的灵活RA系列。公司还提供模拟和功率器件，包括电源管理IC、MOSFET、IGBT和电池管理方案，并通过收购Intersil和Dialog Semiconductor增强了该领域实力。在汽车领域，瑞萨电子推出R-Car片上系统（SoC）用于车载信息娱乐和高级驾驶辅助系统（ADAS），以及车辆控制MCU。瑞萨电子被公认为全球最大的汽车MCU供应商，在整体MCU市场中始终处于领先地位，占据重要市场份额。其产品以高可靠性、低功耗和完善的生态系统支持而著称，助力实现智能高效的电子系统。公司大力投入研发，积极应对电气化、自动驾驶和边缘人工智能等新兴趋势。瑞萨电子通过广泛的销售和支持网络服务全球客户，致力于成为值得信赖的半导体合作伙伴。

MODELS

场效应晶体管（FET） - 型号列表共 340 个型号

制造商零件编号	价格/库存	Standard Package	FET Feature	Packaging	Mounting Type	Current - Continuous Drain (Id) @ 25° C	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Power - Max	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) @ Vds	rohs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) @ Vgs	Channel Mode	Unit Pack	MOQ	Other Names	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Maximum Gate Source Voltage	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Operating Temperature	Mounting	Package	Maximum Gate Source Voltage	Maximum Drain Source Voltage	EU RoHS	Maximum Drain Source Resistance	Number of Elements per Chip	Minimum Operating Temperature	Maximum Operating Temperature	Channel Type	Maximum Continuous Drain Current	Typical Fall Time	Maximum Power Dissipation	Pin Count	Vgs(th) (Max) @ Id	Package Width	PCB	Supplier Package	Package Length	Package Height	Package/Case	Gate-Source Voltage (Max)	Operating Temp Range	Package Type	Polarity	Type	Number of Elements	Operating Temperature Classification	Drain-Source On-Volt	Rad Hardened	Continuous Drain Current	P(tot)	Matchcode	LogicLevel	Standard Leadtime	Q(g)	Automotive	I(D)	V(DS)	Technology	RDS(on)at10V	Leadfree Defin.	Standard Package Name	Tab	Lead Shape	Power Dissipation	R(thJC)	LLRDS(on)	LLRDS(on)at	DELETED	Drain Current (Max)	Frequency (Max)	Output Power (Max)	Noise Figure	Drain-Source On-Res	Drain Efficiency	Power Gain
NP109N04PUG-E1-AY Trans MOSFET N-CH 40V 110A 3-Pin(2+Tab) TO-263 T/R renesas electronics	询价	Tape & Reel	Standard	Tape & Reel (TR)	Surface Mount	110A	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3	2.3 mOhm @ 55A, 10V	MOSFET N-Channel, Metal Oxide	1.8W	40V	15750pF @ 25V	Lead free / RoHS Compliant	110A (Tc)	270nC @ 10V	Enhancement	800	1	-	40 V	110 A	2.3@10V mOhm	±20 V	47 ns	35 ns	90 ns	-55 to 175 °C	Surface Mount	3TO-263	-	-	-	-	-	-	-	-	-	-	-	-	4V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	220W	NP109N04PUG-E1-AY	NO	22 weeks	270nC	AEC-Q(101)	110A	40V	NP-Series	0.0023Ohm	RoHS-conform	-	-	-	-	0.68K/W	n.s.Ohm	n.s.V	-	-	-	-	-	-	-	-
HAT2168H-EL-E Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) LFPAK T/R renesas electronics	询价	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	30A	SC-100, SOT-669	LFPAK	7.9 mOhm @ 15A, 10V	MOSFET N-Channel, Metal Oxide	15W	30V	1730pF @ 10V	Lead free / RoHS Compliant	30A (Ta)	11nC @ 4.5V	Enhancement	-	-	HAT2168H-EL-E-ND	30 V	30 A	7.9@10V mOhm	±20 V	8 ns	20 ns	40 ns	-55 to 150 °C	Surface Mount	5LFPAK	±20	30	Compliant	7.9@10V	1	-55	150	N	30	4 ns	-	5	-	3.95	4	LFPAK	4.9	1(Max)	SC-100, SOT-669	�20 V	-55C to 150C	LFPAK	N	Power MOSFET	1	Military	30 V	No	30 A	-	-	-	-	-	-	-	-	-	-	-	LFPAK	Tab	Gull-wing	-	-	-	-	Compliant	30 A	Not Required MHz	Not Required W	Not Required dB	0.0079 ohm	Not Required %	Not Required dB
2SK2225-E 2SK2225-E renesas electronics	询价	1	Standard	Tube	Through Hole	2A	TO-3PFM, SC-93-3	TO-3PFM	12 Ohm @ 1A, 15V	MOSFET N-Channel, Metal Oxide	50W	1500V (1.5kV)	984.7pF @ 30V	Lead free / RoHS Compliant	2A (Ta)	-	-	30	1000	-	-	-	-	-	-	-	-	-	THT	TO-3P	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100W	2SK2225-E	NO	22 weeks	n.s.nC	NO	2A	1500V	HighPWR	12Ohm	RoHS-conform	-	-	-	-	n.s.K/W	n.s.Ohm	n.s.V	-	-	-	-	-	-	-	-
RJK0853DPB-00#J5 Trans MOSFET N-CH 80V 40A 5-Pin(4+Tab) LFPAK T/R renesas electronics	询价	Tape & Reel	Logic Level Gate	Tape & Reel (TR)	Surface Mount	40A (Ta)	SC-100, SOT-669	LFPAK	8 mOhm @ 20A, 10V	MOSFET N-Channel, Metal Oxide	65W	80V	6170pF @ 10V	Lead free / RoHS Compliant	40A (Ta)	40nC @ 4.5V	Enhancement	-	-	RJK0853DPB-00#J5DKR	80 V	40 A	8@10V mOhm	±20 V	14 ns	7.2 ns	70 ns	-55 to 150 °C	Surface Mount	5LFPAK	-	-	-	-	-	-	-	-	-	12 ns	-	4 +Tab	-	-	-	-	-	-	-	�20 V	-55C to 150C	LFPAK	N	Power MOSFET	1	Military	80 V	No	40 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	65 W	-	-	-	-	-	-	-	-	-	-	-
2 RJK0353DPA-00#J0 Trans MOSFET N-CH 30V 35A 8-Pin WPAK T/R renesas electronics	询价	2,500	Logic Level Gate	Tape and Reel	Surface Mount	35A (Ta)	8-WDFN Exposed Pad	8-WPAK	5.2 mOhm @ 17.5A, 10V	MOSFET N-Channel, Metal Oxide	40W	30V	2180pF @ 10V	Lead free / RoHS Compliant	35A (Ta)	14nC @ 4.5V	Enhancement	-	-	RJK0353DPA-00#J0CT	30 V	35 A	5.2@10V mOhm	±20 V	8.5 ns	4.8 ns	47.5 ns	-55 to 150 °C	Surface Mount	8WPAK	±20	30	Compliant	5.2@10V	1	-55	150	N	35	6 ns	40000	8	-	6.1	8	WPAK	5.1	0.8(Max)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK0389DPA-00#J53 RENRJK0389DPA-00#J53 MOSFET W-PAK, 30V, renesas electronics	询价	3,000	Logic Level Gate, 4.5V Drive	Tape & Reel (TR)	Surface Mount	15A, 20A	8-WFDFN Exposed Pad	8-WPAK	10.7 mOhm @ 7.5A, 10V	2 N-Channel (Half Bridge)	10W	30V	860pF @ 10V	Lead free / RoHS Compliant	15A, 20A	6.3nC @ 10V	-	0	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8-WFDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 RJK03C0DPA-00#J53 Trans MOSFET N-CH 30V 70A 8-Pin WPAK T/R renesas electronics	询价	3,000	Logic Level Gate	Tape & Reel (TR)	Surface Mount	70A (Ta)	8-WDFN Exposed Pad	8-WPAK	2 mOhm @ 35A, 10V	MOSFET N-Channel, Metal Oxide	65W	30V	11000pF @ 10V	Lead free / RoHS Compliant	70A (Ta)	66nC @ 4.5V	Enhancement	-	-	RJK03C0DPA-00#J53TR	30 V	70 A	2@10V mOhm	±20 V	28 ns	14.2 ns	102 ns	-55 to 150 °C	Surface Mount	8WPAK	-	-	-	-	-	-	-	-	-	40 ns	-	-	2.5V @ 1mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK03E2DNS-00#J5 RENRJK03E2DNS-00#J5 MOSFET,N-CH,30V,16A, renesas electronics	询价	5,000	Logic Level Gate	Tape & Reel (TR)	Surface Mount	16A (Ta)	8-WDFN Exposed Pad	8-HWSON (3.3x3.3)	9 mOhm @ 8A, 10V	MOSFET N-Channel, Metal Oxide	12.5W	30V	1540pF @ 10V	Lead free / RoHS Compliant	16A (Ta)	7.3nC @ 4.5V	-	0	1	RJK03E2DNS-00#J5DKR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK1053DPB-00#J5 RENRJK1053DPB-00#J5 100V/25A PCH POWER M renesas electronics	询价	2,500	Logic Level Gate	Tape and Reel	Surface Mount	25A (Ta)	SC-100, SOT-669	LFPAK	13 mOhm @ 12.5A, 10V	MOSFET N-Channel, Metal Oxide	65W	100V	6160pF @ 10V	Lead free / RoHS Compliant	25A (Ta)	43nC @ 4.5V	Enhancement	-	-	RJK1053DPB-00#J5DKR	-	-	-	-	-	-	-	-	-	-	±20	100	Compliant	13@10V	1	-55	150	N	25	-	65000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK0329DPB-01#J0 JET MOSFET, 30V, LFPAK, PB/HALOGEN FREE renesas electronics	询价	2,500	Logic Level Gate	Tape & Reel (TR)	Surface Mount	55A (Ta)	SC-100, SOT-669	LFPAK	2.3 mOhm @ 27.5A, 10V	MOSFET N-Channel, Metal Oxide	60W	30V	5330pF @ 10V	Lead free / RoHS Compliant	55A (Ta)	35nC @ 4.5V	-	-	-	RJK0329DPB-01#J0TR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.5V @ 1mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK1555DPA-00#J0 JET SERIES MOSFET, 150V, WPAK, PB-F, HF renesas electronics	询价	2,500	Standard	Tape & Reel (TR)	Surface Mount	25A (Ta)	8-WDFN Exposed Pad	8-WPAK	48 mOhm @ 12.5A, 10V	MOSFET N-Channel, Metal Oxide	30W	150V	2400pF @ 25V	Lead free / RoHS Compliant	25A (Ta)	38nC @ 10V	-	0	1	RJK1555DPA-00#J0DKR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK0214DPA-00#J53 TRANS MOSFET N-CH 30V 60A 5PIN LFPAK renesas electronics	询价	3,000	Logic Level Gate, 4.5V Drive	Tape & Reel (TR)	Surface Mount	15A, 45A	8-WDFN Exposed Pad	8-DFN (5x6)	9.2 mOhm @ 7.5A, 10V	2 N-Channel (Half Bridge)	10W, 35W	25V	1130pF @ 10V	Lead free / RoHS Compliant	15A, 45A	6.2nC @ 4.5V	-	0	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8-WDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 RJK0364DPA-00#J0 Trans MOSFET N-CH 30V 35A 8-Pin WPAK T/R renesas electronics	询价	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	35A (Ta)	8-WDFN Exposed Pad	8-WPAK	7.8 mOhm @ 17.5A, 10V	MOSFET N-Channel, Metal Oxide	35W	30V	1600pF @ 10V	Lead free / RoHS Compliant	35A (Ta)	10nC @ 4.5V	Enhancement	-	-	RJK0364DPA-00#J0CT	30 V	35 A	7.8@10V mOhm	±20 V	5.8 ns	4.5 ns	34.8 ns	-55 to 150 °C	Surface Mount	8WPAK	±20	30	Compliant	7.8@10V	1	-55	150	N	35	-	35000	8	-	6.1	8	WPAK	5.1	0.8(Max)	8-WDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK1557DPA-00#J0 JET SERIES MOSFET, 150V, WPAK, PB FREE renesas electronics	询价	2,500	Standard	Tape & Reel (TR)	Surface Mount	25A (Ta)	8-WDFN Exposed Pad	8-WPAK	58 mOhm @ 12.5A, 10V	MOSFET N-Channel, Metal Oxide	30W	150V	1250pF @ 25V	Lead free / RoHS Compliant	25A (Ta)	20nC @ 10V	-	0	1	RJK1557DPA-00#J0DKR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP80N04MDG-S18-AY Trans MOSFET N-CH 40V 80A Tube renesas electronics	询价	Rail / Tube	Logic Level Gate	Tube	Through Hole	80A	TO-220-3 Full Pack	TO-220-3	4.8 mOhm @ 40A, 10V	MOSFET N-Channel, Metal Oxide	1.8W	40V	6900pF @ 25V	Lead free / RoHS Compliant	80A (Tc)	135nC @ 10V	Enhancement	0	1	-	40 V	80 A	4.8@10V mOhm	±20 V	17 ns	18 ns	74 ns	-55 to 175 °C	-	-	±20	40	Compliant	4.8@10V	1	-55	175	N	80	8 ns	1800	-	2.5V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK03E1DNS-00#J5 Trans MOSFET N-CH 30V 25A 8-Pin HWSON T/R Renesas Electronics Corporation	询价	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	25A (Ta)	8-WDFN Exposed Pad	8-HWSON (3.3x3.3)	6.9 mOhm @ 12.5A, 10V	MOSFET N-Channel, Metal Oxide	15W	30V	2300pF @ 10V	Lead free / RoHS Compliant	25A (Ta)	10.7nC @ 4.5V	Enhancement	0	1	RJK03E1DNS-00#J5DKR	30 V	25 A	6.9@10V mOhm	±20 V	9.4 ns	4.5 ns	36 ns	-55 to 150 °C	Surface Mount	8HWSON	±20	30	Compliant	6.9@10V	1	-55	150	N	25	5.1 ns	15000	8	-	3.3	8	HWSON	3.3	0.8(Max)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK0456DPB-00#J5 Trans MOSFET N-CH 40V 50A 5-Pin(4+Tab) LFPAK T/R renesas electronics	询价	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	50A (Ta)	SC-100, SOT-669	LFPAK	3.2 mOhm @ 25A, 10V	MOSFET N-Channel, Metal Oxide	65W	40V	3000pF @ 10V	Lead free / RoHS Compliant	50A (Ta)	39nC @ 10V	Enhancement	2500	5000	RJK0456DPB-00#J5DKR	40 V	50 A	3.2@10V mOhm	±20 V	14 ns	6.8 ns	34 ns	-55 to 150 °C	Surface Mount	5LFPAK	±20	40	Compliant	3.2@10V	1	-55	150	N	50	8 ns	65000	5	-	3.95	4	LFPAK	4.9	1(Max)	-	�20 V	-55C to 150C	LFPAK	N	Power MOSFET	1	Military	40 V	No	50 A	65W	RJK0456DPB-00#J5	NO	22 weeks	39nC	NO	50A	40V	JetSeries	0.0032Ohm	RoHS-conform	LFPAK	Tab	Gull-wing	65 W	-	-	-	Compliant	-	-	-	-	-	-	-
RJK2055DPA-00#J0 JET SERIES MOSFET, 200V, WPAK, PB FREE renesas electronics	询价	2,500	Standard	Tape and Reel	Surface Mount	20A (Ta)	8-WDFN Exposed Pad	8-WPAK	69 mOhm @ 10A, 10V	MOSFET N-Channel, Metal Oxide	30W	200V	2400pF @ 25V	Lead free / RoHS Compliant	20A (Ta)	38nC @ 10V	Enhancement	0	1	RJK2055DPA-00#J0DKR	-	-	-	-	-	-	-	-	Surface Mount	-	±30	200	Compliant	69@10V	1	-55	150	N	20	-	30000	8	-	-	-	-	-	-	-	�30 V	-55C to 150C	WPAK EP	N	Power MOSFET	1	Military	200 V	No	20 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30 W	-	-	-	-	-	-	-	-	-	-	-
NP80N04NDG-S18-AY Trans MOSFET N-CH 40V 80A Tube renesas electronics	询价	Rail / Tube	Logic Level Gate	Tube	Through Hole	80A	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	4.8 mOhm @ 40A, 10V	MOSFET N-Channel, Metal Oxide	1.8W	40V	6900pF @ 25V	Lead free / RoHS Compliant	80A (Tc)	135nC @ 10V	Enhancement	0	1	-	40 V	80 A	4.8@10V mOhm	±20 V	17 ns	18 ns	74 ns	-55 to 175 °C	-	-	±20	40	Compliant	4.8@10V	1	-55	175	N	80	8 ns	1800	-	2.5V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP82N04NDG-S18-AY Trans MOSFET N-CH 40V 82A 3-Pin(3+Tab) TO-262 Tube renesas electronics	询价	Rail / Tube	Logic Level Gate	Tube	Through Hole	82A	TO-262-3 Full Pack, I²Pak	TO-262-3	4.2 mOhm @ 41A, 10V	MOSFET N-Channel, Metal Oxide	1.8W	40V	9000pF @ 25V	Lead free / RoHS Compliant	82A (Tc)	150nC @ 10V	Enhancement	0	1	-	40 V	82 A	4.2@10V mOhm	±20 V	26 ns	68 ns	73 ns	-55 to 175 °C	Through Hole	3TO-262	±20	40	Compliant	4.2@10V	1	-55	175	N	82	11 ns	1800	3	2.5V @ 250µA	4.45	3	TO-262	10	8.9	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	I2PAK	Tab	Through Hole	-	-	-	-	-	-	-	-	-	-	-	-

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Renesas Electronics Corporation- 场效应晶体管（FET）

场效应晶体管（FET） - 型号列表共 340 个型号

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) @ Vds

Gate Charge (Qg) @ Vgs

Current - Continuous Drain (Id) @ 25° C

Current - Continuous Drain (Id) @ 25°C

Other Names

Power - Max

RDS-on

Typical Turn-Off Delay Time

Maximum Continuous Drain Current

Typical Turn-On Delay Time

Typical Rise Time

Supplier Device Package

Maximum Drain Source Resistance

Package / Case

Drain to Source Voltage (Vdss)

Typical Fall Time

Maximum Continuous Drain Current

Package

Standard Package

Maximum Power Dissipation

Unit Pack

Package Width

Maximum Drain Source Voltage

Supplier Package

Package Length

Pin Count

Drain-Source On-Volt

Continuous Drain Current

Maximum Drain Source Voltage

Mounting

P(tot)

Matchcode

MOQ

Q(g)

I(D)

Technology

RDS(on)at10V

FET Feature

Packaging

Vgs(th) (Max) @ Id

PCB

Package Height

Package/Case

Operating Temperature

R(thJC)

Automotive

V(DS)

Mounting Type

FET Type

Maximum Gate Source Voltage

Standard Package Name

Maximum Operating Temperature

Lead Shape

Gate-Source Voltage (Max)

Package Type

Power Dissipation