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onsemi

onsemi- 晶体管(双极结型晶体管与可编程单结晶体管)

onsemi(前身为安森美半导体)是一家为绿色电子产品提供高性能、高能效硅解决方案的顶级供应商,总部位于美国亚利桑那州菲尼克斯。公司于1999年从摩托罗拉半导体部门分拆成立,逐步成长为全球半导体行业的创新者。核心业务涵盖电源管理、信号处理、逻辑、分立器件及定制半导体,服务于汽车、工业、通信、计算机、消费电子、医疗和军事/航空等市场。产品组合包括功率分立器件和模块,如MOSFET、IGBT以及EliteSiC品牌碳化硅器件,还有LDO、DC-DC转换器和控制器等电源管理IC。信号管理方面提供运算放大器、比较器、电压基准和数据转换器等产品。通过收购Catalyst Group,公司还拥有可编程存储器(EEPROM、闪存、NVRAM)以及数字电位计和微控制器监控电路。传感器产品线包括CMOS图像传感器、智能传感解决方案,以及激光雷达、超声波和接近传感器,用于高级驾驶辅助系统(ADAS)。公司在全球设有制造厂、设计中心和销售办事处,形成了增值型供应链网络,覆盖北美、欧洲和亚太地区。2009年公司收入为17.69亿美元,如今已成为《财富》美国500强企业和全球半导体前20强,尤其在汽车和工业功率半导体领域具有显著优势。

02
MODELS

晶体管(双极结型晶体管与可编程单结晶体管) - 型号列表816 个型号

Other Names

Minimum DC Current Gain

Maximum Collector Emitter Saturation Voltage

Vce Saturation (Max) @ Ib, Ic

DC Current Gain (hFE) (Min) @ Ic, Vce

DC Collector/Base Gain hfe Min

Package / Case

Collector-Emitter Saturation Voltage

Power Dissipation

Package

Maximum Power Dissipation

Maximum Power Dissipation

Supplier Device Package

Package Type

Collector- Emitter Voltage VCEO Max

Collector- Base Voltage VCBO

DC Current Gain

Collector Emitter Voltage V(br)ceo

DC Collector Current

DC Current Gain hFE

Maximum Collector Emitter Voltage

Maximum Operating Frequency

Voltage - Collector Emitter Breakdown (Max)

Power - Max

Collector-Emitter Voltage

Power Dissipation Pd

Weight (kg)

Maximum DC Collector Current

Supplier Package

Maximum Collector Emitter Voltage

Current - Collector (Ic) (Max)

Frequency - Transition

Minimum Operating Temperature

Factory Pack Quantity

Gain Bandwidth Product fT

Continuous Collector Current

Collector Current (DC) (Max)

Collector-Base Voltage

Collector Current (DC)

Transition Frequency ft

Maximum Collector Base Voltage

Maximum Transition Frequency

Packaging

Dimensions

Height

Length

Frequency (Max)

Frequency

PackageType

Maximum Collector Base Voltage

Transistor Type

Maximum Base Emitter Saturation Voltage

Maximum Operating Temperature

Width

Transistor Case Style

PowerDissipation

Pin Count

Standard Package

Maximum DC Collector Current

Standard Package Name

Operating Temp Range

Collector Emitter Voltage Vces

Hfe Min

Voltage,CollectortoEmitter,Saturation

DC Current Gain (Min)

Current - Collector Cutoff (Max)

Operating Temperature

Maximum Operating Temperature

Minimum Operating Temperature

Configuration

Emitter- Base Voltage VEBO

Emitter-Base Voltage

Number of Elements

Operating Temperature Min

No. of Pins

Gain Bandwidth ft Typ

Tariff No.

Current,Collector

Current,Gain

Voltage,Breakdown,CollectortoEmitter

Voltage,CollectortoBase

Voltage,CollectortoEmitter

Case

Gross weight

PCB

Package Length

Type

Maximum Emitter Base Voltage

Number of Elements per Chip

Lead Shape

Maximum Emitter Base Voltage

Product Category

Operating Temperature Classification

Operating Temperature Max

Current Ic Continuous a Max

Current Ic hFE

Device Marking

Operating Temperature Range

Resistance,Thermal,JunctiontoCase

Voltage,EmittertoBase

Collector-emitter voltage

Collector current

Collective package [pcs]

spg

Maximum Input Offset Voltage

Voltage - Input Offset (Max)

Comparator Type

IC Output Type

Peak DC Collector Current

Maximum Continuous Collector Current

Mounting

Mounting Type

Category

Transistor Polarity

Mounting Style

MSL

SVHC

Continuous Collector Current Ic Max

Gain Bandwidth ft Min

Power Dissipation Ptot Max

Voltage Vcbo

Polarity

Transistor type

Power

Number of Channels per Chip

Typical Response Time

Minimum Single Supply Voltage

Minimum Dual Supply Voltage

Number of Channels

Supply Voltage - Min

Offset Voltage (Max)

Supply Current (Max)

Response Time

Output Current (Typ)

Manufacturer Type

Typical Single Supply Voltage

Typical Response Time

Package Width

Maximum Supply Current

Minimum Dual Supply Voltage

Minimum Single Supply Voltage

Package Height

Number of Elements

Voltage - Supply, Single/Dual (±)

Package/Case

Offset Voltage - Max

Supply Current - Max

Output Current - Typ

Input Offset Voltage

Dual Supply Voltage (Min)

Single Supply Voltage (Min)

Single Supply Voltage (Typ)

Supply Current

No. of Comparators

Supply Voltage Range

Output Compatibility

No.Comparators

Supply Voltage Min

Current,Supply

NumberofAmplifiers

Voltage,InputOffset

Voltage,Supply

Maximum Continuous DC Collector Current

Maximum Collector Emitter Saturation Voltage

Maximum Collector Cut-off Current

制造商零件编号价格/库存PackageTypePin CountMountingStandard PackagePackagingMounting TypeSupplier Device PackagePackage / CaserohsMaximum Operating TemperatureMinimum Operating TemperaturePackage TypeFactory Pack QuantityProduct CategoryMounting StyleRoHSPower DissipationWeight (kg)Tariff No.Operating Temp RangeNumber of ElementsOperating Temperature ClassificationRad HardenedNo. of PinsEU RoHSMaximum Operating Temperature Minimum Operating Temperature Supplier PackageMaximum Collector Emitter VoltageMaximum DC Collector CurrentMinimum DC Current GainMaximum Collector Emitter Saturation VoltageOperating TemperatureMaximum Power DissipationMaximum Power Dissipation Current - Collector (Ic) (Max)Transistor TypeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)DC Current Gain (hFE) (Min) @ Ic, VceConfigurationTransistor PolarityDC Collector/Base Gain hfe MinCollector- Emitter Voltage VCEO MaxCollector Emitter Voltage V(br)ceoDC Collector CurrentDC Current Gain hFEOther NamesStandard Package NameLead ShapeFrequency - TransitionPower - MaxEmitter- Base Voltage VEBOCollector- Base Voltage VCBOContinuous Collector CurrentTransition Frequency ftPower Dissipation PdNumber of Elements per ChipCollector-Emitter Saturation VoltageCollector Current (DC) (Max)Collector-Emitter VoltageCollector Current (DC)DC Current GainMaximum Collector Base VoltageMaximum Collector Emitter Voltage Emitter-Base VoltageMSLMaximum Operating FrequencyMaximum Emitter Base Voltage HeightLengthGain Bandwidth Product fTCollector-Base VoltageFrequency (Max)FrequencyOperating Temperature MinOperating Temperature MaxMaximum Collector Base Voltage DimensionsWidthSVHCMaximum DC Collector Current Maximum Transition Frequency Maximum Emitter Base VoltageTransistor Case StyleMaximum Base Emitter Saturation VoltageOperating Temperature RangePackageTypePolarityPowerDissipationDC Current Gain (Min)CategoryCurrent,CollectorCurrent,GainPrimaryTypeVoltage,Breakdown,CollectortoEmitterVoltage,CollectortoEmitterVoltage,CollectortoEmitter,SaturationVoltage,EmittertoBaseCurrent - Collector Cutoff (Max)Package Width PCBPackage Length Package Height Collector Emitter Voltage VcesGain Bandwidth ft TypHfe MinVoltage,CollectortoBaseResistance,Thermal,JunctiontoCaseCaseMultiplicityGross weightCollective package [pcs]spgNumber of Channels per ChipOutput TypeTypical Response TimeTypical Voltage GainMinimum Single Supply VoltageMaximum Single Supply VoltageMinimum Dual Supply VoltageMaximum Dual Supply VoltageNumber of ChannelsSupply Voltage - MaxSupply Voltage - MinOffset Voltage (Max)Supply Current (Max)Response TimeOutput Current (Typ)Manufacturer TypeTypical Single Supply Voltage Rail to RailTypical Response Time Maximum Dual Supply Voltage Maximum Input Bias Current Maximum Supply Current Typical Voltage Gain Power Supply TypeMaximum Single Supply Voltage Minimum Dual Supply Voltage Typical Dual Supply Voltage Maximum Input Offset Voltage Minimum Single Supply Voltage TechnologyNumber of ElementsCurrent - Input Bias (Max)Current - Quiescent (Max)Voltage - Input Offset (Max)Current - Output (Typ)Voltage - Supply, Single/Dual (±)Package/CaseOffset Voltage - MaxSupply Current - MaxOutput Current - TypInput Bias Current (Typ)Input Offset VoltagePower Supply RequirementDual Supply Voltage (Min)Single Supply Voltage (Min)Single Supply Voltage (Max)Single Supply Voltage (Typ)Dual Supply Voltage (Max)Voltage Gain in dBSupply CurrentComparator TypeTermination TypePeak DC Collector CurrentMaximum Continuous Collector CurrentCurrent Ic Continuous a MaxCurrent Ic hFEDevice MarkingTransistor typePolarisationCollector-emitter voltageCollector currentNo. of ComparatorsSupply Voltage RangeAmplifier Case StyleIC Output TypeMaximum Continuous DC Collector Current Maximum Collector Emitter Saturation Voltage Maximum Collector Cut-off CurrentContinuous Collector Current Ic MaxFull Power Rating TemperatureGain Bandwidth ft MinNo. of TransistorsPower Dissipation Ptot MaxVoltage VcboPowerOutput CompatibilityNo.ComparatorsSupply Voltage MaxSupply Voltage MinAmplifierTypeCurrent,InputBiasCurrent,InputOffsetCurrent,SupplyNumberofAmplifiersTemperature,Operating,RangeVoltage,GainVoltage,InputOffsetVoltage,SupplyMaximum Base Emitter Saturation Voltage Current Ic @ Vce SatCurrent Ic Fall Time MeasurementFall Time @ IcPin ConfigurationIntegrated circuit typeKind of comparatorNumber of channelsSupply voltageDelay timeBase NumberComparator FeaturesIC Generic NumberIC Temperature RangeLogic Function Number典型双电源电压比较器类型Board Level Components典型电压增益典型响应时间安装类型高度电源类型最低工作温度典型单电源电压宽度封装类型最高工作温度引脚数目长度每片芯片通道数目输出类型尺寸Supply TypeDual Supply VoltageOperating Supply CurrentIb - Input Bias CurrentOperating Supply VoltageProductReference VoltageBrandVcm - Common Mode VoltageVoltage Gain dBVos - Input Offset VoltageSeriesOutput Current per ChannelShutdownPd - Power DissipationBase-Emitter Saturation Voltage (Max)Transistor kindAv Current IcPulsed Current IcmDC Current Gain Hfe MinPeak Current Icm
2N4401G
6
2N4401G

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk

on semiconductor

询价3TO-92NPN3Through HoleBulkBulkThrough HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)Lead free / RoHS Compliant+150 °C-55 °CTO-925000Transistors Bipolar - BJTThrough HoleRoHS Compliant0.625 W0.000285412900-55C to 150C1MilitaryNo:3Compliant150-55TO-9240 V0.6 A20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V0.4@15mA@150mA|0.75@50mA@500mA V-55 to 150 °C625 mW625600mANPN750mV @ 50mA, 500mA40V100 @ 150mA, 1VSingleNPN20 at 0.1 mA at 1 V40 V:40V:600mA:250-TO-92Through Hole250MHz625mW6 V60 V0.6 A:250MHz:625mW10.75 V0.6 A40 V0.6 A2060 V406 V:MSL 1 - Unlimited250(Min) MHz65.33mm5.2mm250 MHz60 V250 MHz250 MHz:-55°C:150°C605.33 x 5.2 x 4.19mm4.19mm:No SVHC (20-Jun-2013)0.6250(Min)6 V:TO-921.2 V:-55°C to +150°CTO-92NPN1.5W-Bipolar Small Signal600mA40Si40V40V0.75V6V-----:400mV:250MHz:4060V83.3°C/W-----------------------------------------------------------:600mA:1mA:2N4401-----------:600mA:25°C:250MHz:1:625mW:60V---------------:150mA:150mA:255ns:b-------------------------------------------------
2N5401RLRAG
4
2N5401RLRAG

Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 T/R

on semiconductor

询价3TO-92PNP3Through HoleTape & ReelTape and ReelThrough HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA) Formed LeadsLead free / RoHS Compliant+ 150 C- 55 CTO-922000Transistors Bipolar - BJTThrough HoleRoHS Compliant0.625 W0.0002385412100-55C to 150C1MilitaryNo:3Compliant150-55TO-92150 V0.6 A50@1mA@5V|60@10mA@5V|50@50mA@5V0.2@1mA@10mA|0.5@5mA@50mA V-55 to 150 °C625 mW625600mAPNP500mV @ 5mA, 50mA150V60 @ 10mA, 5VSinglePNP50 at 1 mA at 5 V150 V:150V:500mA:1002N5401RLRAGOSTRTO-92Formed300MHz625mW5 V160 V0.6 A:300MHz:625mW10.5 V0.6 A150 V0.6 A50160 V1505 V-300 MHz5--300 MHz160 V300 MHz300 MHz--160---0.6300-------50---------------------------------------------------------------------------------------------------------------------------------------------------------------------
2N5551G
6
2N5551G

Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk

on semiconductor

询价3TO-92NPN3Through HoleBulkBulkThrough HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)Lead free / RoHS Compliant+150 °C-55 °CTO-925000Transistors Bipolar - BJTThrough HoleRoHS Compliant0.625 W0.00285412900-55C to 150C1MilitaryNo:3Compliant150-55TO-92160 V0.6 A80@1mA@5V|80@10mA@5V|30@50mA@5V0.15@1mA@10mA|0.2@5mA@50mA V-55 to 150 °C625 mW625600mANPN200mV @ 5mA, 50mA160V80 @ 10mA, 5VSingleNPN80 at 1 mA at 5 V160 V:160V:600mA:100-TO-92Through Hole300MHz625mW6 V180 V0.6 A:300MHz:625mW10.25 V0.6 A160 V0.6 A80180 V1606 V:MSL 1 - Unlimited300 MHz65.33mm5.2mm300 MHz180 V300 MHz300 MHz:-55°C:150°C1805.33 x 5.2 x 4.19mm4.19mm:No SVHC (20-Jun-2013)0.63006 V:TO-921 V:-55°C to +150°CTO-92NPN1.5W80Bipolar Small Signal600mA30Si160V160V0.2V6V--------180V83.3°C/W---------------------------------------------------------------------------------------------------------------------------------------------------
MPSA06RLRAG
5
MPSA06RLRAG

Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 T/R

on semiconductor

询价3TO-92NPN3Through HoleTape & ReelReelThrough HoleTO-92-3TO-92-3 (TO-226)Lead free / RoHS Compliant+ 150 C- 55 CTO-922000Transistors Bipolar - BJTThrough HoleRoHS Compliant0.625 W0.00285411000-55C to 150C1MilitaryNo:3----80 V0.5 A100@10mA@1V|100@100mA@1V0.25@10mA@100mA V-55 to 150 °C625 mW-500mANPN250mV @ 10mA, 100mA80V100 @ 100mA, 1VSingleNPN100 at 10 mA at 1 V80 V:80V:500mA:100MPSA06RLRAGOSCT--100MHz625mW4 V80 V0.5 A:100MHz:625mW-80 V0.5 A80 V0.5 A100--4 V-100(Min) MHz---100 MHz80 V100 MHz100 MHz---------------100--------100nA------------------------------------------------------------------------------------------------------------------------------------------------------------
BUX85G
8
BUX85G

Trans GP BJT NPN 450V 2A 3-Pin(3+Tab) TO-220AB Rail

on semiconductor

询价3TO-220ABNPN3Through HoleRail / TubeRailThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant+150 °C-65 °CTO-220AB50Transistors Bipolar - BJTThrough HoleRoHS Compliant50 W0.00285412100-65C to 150C1MilitaryNo:3Compliant150-65TO-220AB450 V2 A30@100mA@5V0.8@30mA@0.3A|1@200mA@1A V-65 to 150 °C50000 mW500002ANPN1V @ 200mA, 1A450V30 @ 100mA, 5VSingleNPN30450 V:450V:2A:4BUX85GOSTO-220Through Hole4MHz50W5 V1 kV2 A:4MHz:50W11 V2 A450 V2 A30-4505 V:-4(Min) MHz59.28mm10.28mm4 MHz-4 MHz4 MHz:-65°C:150°C-9.28 x 10.28 x 4.82mm4.82mm:No SVHC (20-Jun-2013)24(Min)5 V:TO-2201.1 V:-65°C to +150°CTO-220ABNPN50W30Bipolar Power2A50Si450V1000V1V5V200µA----:30V:4MHz:30-2.5°C/WTO6612.8 g100100---------------------------------------------------------NPNbipolar1kV2A-------------40W-------------------------------------------------------------------
LM2903DG
9
LM2903DG

Comparator Dual ±18V/36V 8-Pin SOIC N Rail

on semiconductor

询价8SOIC NGeneral Purpose8Surface MountRail / TubeTubeSurface Mount8-SOIC NSOIC-8Lead free / RoHS Compliant+ 105 C- 40 CSOIC N98Comparator ICsSMD/SMTRoHS Compliant570 W0.00285411000-40C to 105C2IndustrialNo:8Compliant105-40SOIC N-----40 to 105 °C570 mW570-------------SOICGull-wing--------------------------------------------------4(Max)85(Max)1.5(Max)----------2Open Collector1.5 us106.02 dB2 V36 V±1 V±18 V236 V2 V7 mV1 mA1.5 us16 mALow Offset Comparator3|5|9|12|15|18|24|28No1.5±180.25@5V1@5V106.02Single|Dual36±1±3|±5|±9|±12|±157@30V2Bipolar20.25µA @ 5V2.5mA7mV @ 30V16mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V8-SOIC (0.154", 3.90mm Width)7 mV1 mA16 mA250 nA7 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mA:Precision----------:2:± 1V to ± 18V:SOIC:CMOS, MOS, TTL, DTL, ECL-----------------------------------------------------------------------------
LM339DR2G
7
LM339DR2G

Comparator Quad ±18V/36V 14-Pin SOIC T/R

on semiconductor

询价14SOICGeneral Purpose14Surface MountCut TapeReelSurface Mount14-SOICNSOIC-14Lead free / RoHS Compliant70 °C0 °CSOIC2500Comparator ICsSMD/SMTRoHS Compliant1000 W2.27854233000C to 70C4CommercialNo:14Compliant700SOIC N----0 to 70 °C1000 mW1000------------LM339DR2GOSTRSOICGull-wing----------------:---------:0°C:70°C---:No SVHC (20-Jun-2013)-----:0°C to +70°CSOIC-14-1W----------4(Max)148.75(Max)1.5(Max)-----SO1410.42 g250025004Open Collector1.3 us106.02 dB3 V36 V±1.5 V±18 V436 V3 V5 mV2 mA1.3 us16 mAComparator5|9|12|15|18|24|28No1.3±180.25@5V2@5V106.02Single|Dual36±1.5±3|±5|±9|±12|±155@5V3Bipolar40.25µA @ 5V2.5mA5mV @ 5V16mA @ 5V3 V ~ 36 V, ±1.5 V ~ 18 V14-SOIC (0.154", 3.90mm Width)5 mV2 mA16 mA250 nA5 mVSingle/Dual�1.5 V3 V36 V5/9/12/15/18/24/28 V�18 V106.02 dB2 mA:General Purpose:SMD---------:4:3V to 36V:SOIC:CMOS, TTL----------:CMOS, TTL:4:36V:3VComparator25nA±5nA1mAQuad0to70°C200V/mV±2mV±18V-----comparatorlow-power41...36V DC1.3s--------------------------------------------
LM393DG
8
LM393DG

Comparator Dual ±18V/36V 8-Pin SOIC N Rail

on semiconductor

询价8SOIC NGeneral Purpose8Surface MountRail / TubeTubeSurface Mount8-SOIC NSOIC-8Lead free / RoHS Compliant+ 70 C0 CSOIC N98Comparator ICsSMD/SMTRoHS Compliant570 W0.002854110000C to 70C2CommercialNo:8Compliant700SOIC N----0 to 70 °C570 mW570-------------SOICGull-wing----------------:---------:0°C:70°C---:No SVHC (20-Jun-2013)-----:0°C to +70°C-------------4(Max)85(Max)1.5(Max)----------2Open Collector1.3 us106.02 dB2 V36 V±1 V±18 V236 V2 V5 mV1 mA1.5 us0.1 nALow Offset Comparator3|5|9|12|15|18|24|28No1.3±180.25@5V1@5V106.02Single|Dual36±1±3|±5|±9|±12|±155@30V2Bipolar20.25µA @ 5V2.5mA5mV @ 30V16mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V8-SOIC (0.154", 3.90mm Width)5 mV1 mA0.1 nA250 nA5 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mA:Precision:SMD----:LM393DG.----:2:± 1V to ± 18V:SOIC:CMOS, DTL, ECL, MOS, TTL----------:CMOS, DTL, ECL, MOS, TTL:2:36V:2V-------------------:393:Dual Low Power:393:Commercial:393---------------------------------------
LM393DR2G
5
LM393DR2G

Comparator Dual ±18V/36V 8-Pin SOIC N T/R

on semiconductor

询价8SOIC NGeneral Purpose8Surface MountCut TapeReelSurface Mount8-SOIC NSOIC-8Lead free / RoHS Compliant+ 70 C0 CSOIC N2500Comparator ICsSMD/SMTRoHS Compliant570 W--0C to 70C2CommercialNo-Compliant700SOIC N----0 to 70 °C570 mW570------------LM393DR2GOSTRSOICGull-wing-------------------1.5 mm (Max)5 mm (Max)----------------SOIC-8-570mW----------4(Max)85(Max)1.5(Max)----------2Open Collector1.3 us106.02 dB2 V36 V±1 V±18 V236 V2 V5 mV1 mA1.5 us0.1 nALow Offset Comparator3|5|9|12|15|18|24|28No1.3±180.25@5V1@5V106.02Single|Dual36±1±3|±5|±9|±12|±155@30V2Bipolar20.25µA @ 5V2.5mA5mV @ 30V16mA @ 5V2 V ~ 36 V, ±1 V ~ 18 V8-SOIC (0.154", 3.90mm Width)5 mV1 mA0.1 nA250 nA5 mVSingle/Dual�1 V2 V36 V3/5/9/12/15/18/24/28 V�18 V106.02 dB1 mAGeneral Purpose----------------------------Comparator25nA±5nA0.4mADual0to70°C200V/mV±1mV±1to±18V---------------±12 V, ±15 V, ±3 V, ±5 V, ±9 V通用Y106.02 dB1.3µs表面贴装1.5mm双,单0 °C3 → 28 V4mmSOIC+70 °C85mm2开路集电极5 x 4 x 1.5mmSingle, Dual+/- 3 V, +/- 5 V, +/- 9 V, +/- 12 V, +/- 15 V1 mA250 nA3 V, 5 V, 9 V, 12 V, 15 V, 18 V, 24 V, 28 VAnalog ComparatorsYesON SemiconductorNegative Rail to Positive Rail - 1.5 V106.02 dB5 mVLM39316 mANo Shutdown570 mW------
MBT3904DW1T1G
7
MBT3904DW1T1G

Trans GP BJT NPN 40V 0.2A 6-Pin SOT-363 T/R

on semiconductor

询价6SOT-363NPN6Surface MountTape & ReelTape and ReelSurface MountSC-88/SC70-6/SOT-3636-TSSOP, SC-88, SOT-363Lead free / RoHS Compliant+ 150 C- 55 CSOT-3633000Transistors Bipolar - BJTSMD/SMTRoHS Compliant0.15 W0.00000685411000-55C to 150C2MilitaryNo:6Compliant150-55SC-8840 V0.2 A40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V0.2@1mA@10mA|0.3@5mA@50mA V-55 to 150 °C150 mW150200mA2 NPN (Dual)300mV @ 5mA, 50mA40V100 @ 10mA, 1VDualNPN40 at 0.1 mA at 1 V- 35 V:40V:200mA:30MBT3904DW1T1GOSTRSOT-23Gull-wing300MHz150mW6 V- 55 V- 2 A:300MHz:150mW20.3 V0.2 A40 V0.2 A4060 V406 V:MSL 1 - Unlimited300(Min) MHz6--300 MHz60 V300 MHz300 MHz:-55°C:150°C60--:No SVHC (16-Dec-2013)0.2300(Min)-:SOT-363-:-55°C to +150°CSOT-363NPN150W--200mA30Si40V40V0.3V6V-1.25620.9:100V:300MHz:30060V---------------------------------------------------------:SMD--:200mA---------------------------------------------------------------------------------------
MC1413BDR2G
7
MC1413BDR2G

Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R

on semiconductor

询价16SOICNPN16Surface MountTape & ReelTape and ReelSurface Mount16-SOIC16-SOIC (0.154", 3.90mm Width)Lead free / RoHS Compliant+85 °C-40 °CSOIC2500Transistors DarlingtonSMD/SMTRoHS Compliant-0.00285411000-40C to 85C7IndustrialNo-Compliant85-40SOIC50 V0.5 A1000@350mA@2V1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V---500mA7 NPN Darlington1.6V @ 500µA, 350mA50V1000 @ 350mA, 2VArray 7NPN100050 V:1.1V:500mA:1000MC1413BDR2GOSCTSOICGull-wing-------71.6 V0.5 A50 V0.5 A1000-50----1.5mm10mm----:-40°C:85°C-10 x 4 x 1.5mm4mm--------NPN-----------4(Max)1610(Max)1.5(Max)--------------------------------------------------------------0.5 A500 mA-----------0.51.6@500uA@350mA|1.3@350uA@200mA|1...---------------------------------------------------------------------------
MJD112T4G
6
MJD112T4G

Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK T/R

on semiconductor

询价3DPAKNPN3Surface MountTape & ReelTape & Reel (TR)Surface MountDPAK-3TO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS Compliant+150 °C-65 °CDPAK2500Transistors DarlingtonSMD/SMTRoHS Compliant20 W085412100----:3----100 V2 A500@0.5A@3V|1000@2A@3V|200@4A@3V2@8mA@2A|3@40mA@4A V---2ANPN - Darlington3V @ 40mA, 4A100V1000 @ 2A, 3VSingleNPN200, 500, 1000100 V:100V:2A:12MJD112T4GOSCT--25MHz1.75W5 V100 V2 A:25MHz:20W1-----100 V-----2.38mm6.73mm-------6.73 x 6.22 x 2.38mm6.22mm---5 V-4 V-------------20µA------------------------------------------------------------------2 A4 A-------------0.02mA--------------------------------------------------------------------------
MJD122T4G
6
MJD122T4G

Trans Darlington NPN 100V 8A 3-Pin(2+Tab) DPAK T/R

on semiconductor

询价3DPAKNPN3Surface MountTape & ReelTape and ReelSurface MountDPAK-3TO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS Compliant+150 °C-65 °CDPAK2500Transistors DarlingtonSMD/SMTRoHS Compliant20 W0.0003385412900----:3Compliant150-65DPAK100 V8 A1000@4A@4V|100@8A@4V2@16mA@4A|4@80mA@8A V--17508ANPN - Darlington4V @ 80mA, 8A100V1000 @ 4A, 4VSingleNPN100, 1000100 V:100V:8A:100MJD122T4GOSCTDPAKGull-wing4MHz1.75W5 V100 V8 A:4MHz:2W1-----100 V100-:MSL 1 - Unlimited-52.38mm6.73mm----:-65°C:150°C1006.73 x 6.22 x 2.38mm6.22mm:No SVHC (16-Dec-2013)--5 V:TO-2524.5 V-------------10µA------------------------------------------------------------------8 A8 A-----------82@16mA@4A|4@80mA@8A0.01mA--------------------4.5@80mA@8A-----------------------------------------------------
MJD127T4G
8
MJD127T4G

Trans Darlington PNP 100V 8A 3-Pin(2+Tab) DPAK T/R

on semiconductor

询价3DPAKPNP3Surface MountTape & ReelTape and ReelSurface MountDPAK-3TO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS Compliant+150 °C-65 °CDPAK2500Transistors DarlingtonSMD/SMTRoHS Compliant20 W0.0003385412900-65C to 150C1MilitaryNo:3Compliant150-65DPAK100 V8 A1000@4A@4V|100@8A@4V2@16mA@4A|4@80mA@8A V--17508APNP - Darlington4V @ 80mA, 8A100V1000 @ 4A, 4VSinglePNP100, 1000100 V:-100V:-8A:100MJD127T4GOSCTDPAKGull-wing4MHz1.75W5 V100 V8 A:4MHz:20W12 V8 A100 V8 A1000100 V1005 V:MSL 1 - Unlimited-52.38mm6.73mm-100 V--:-65°C:150°C1006.73 x 6.22 x 2.38mm6.22mm:No SVHC (16-Dec-2013)--5 V:TO-2524.5 V--PNP----------10µA---------DPAK10.45 g25002500----------------------------------------------------8 A8 A---PNPbipolar100V8A----82@16mA@4A|4@80mA@8A0.01mA------20W-------------4.5@80mA@8A-----------------------------------------------4.5 VDarlington----
MJD31CT4G
5
MJD31CT4G

Trans GP BJT NPN 100V 3A 3-Pin(2+Tab) DPAK T/R

on semiconductor

询价3DPAKNPN3Surface MountTape & ReelTape and ReelSurface MountDPAK-3TO-252-3, DPak (2 Leads + Tab), SC-63Lead free / RoHS Compliant+150 °C-65 °CDPAK2500Transistors Bipolar - BJTSMD/SMTRoHS Compliant1.56 W0.0003385412900-65C to 150C1MilitaryNo:3Compliant150-65DPAK100 V3 A25@1A@4V|10@3A@4V1.2@375mA@3A V-65 to 150 °C1560 mW15603ANPN1.2V @ 375mA, 3A100V10 @ 3A, 4VSingleNPN25 at 1 A at 4 V100 V:100V:3A:10MJD31CT4GOSCTDPAKGull-wing3MHz1.56W5 V100 V3 A:3MHz:15W11.2 V3 A100 V3 A25100 V1005 V:MSL 1 - Unlimited3(Min) MHz52.38mm6.73mm3 MHz100 V3 MHz3 MHz:-65°C:150°C1002.38 x 6.73 x 6.22mm6.22mm:No SVHC (16-Dec-2013)33(Min)5 V:TO-252-----25Bipolar Power-------50µA------------------------------------------------------------------------------------------------------------------------------------------------------------
MJE15035G
6
MJE15035G

Trans GP BJT PNP 350V 4A 3-Pin(3+Tab) TO-220AB Rail

on semiconductor

询价3TO-220ABPNP3Through HoleRail / TubeRailThrough HoleTO-220ABTO-220-3Lead free / RoHS Compliant+150 °C-65 °CTO-220AB50Transistors Bipolar - BJTThrough HoleRoHS Compliant2 W085412900-65C to 150C1MilitaryNo:3Compliant150-65TO-220AB350 V4 A100@100mA@5V|100@500mA@5V|50@1A@5V|10@2A@5V0.5@0.1A@1A V-65 to 150 °C2000 mW20004APNP500mV @ 100mA, 1A350V10 @ 2A, 5VSingle Dual CollectorPNP100350 V:-350V:-4A:100MJE15035GOSTO-220Through Hole30MHz2W5 V350 V4 A:30MHz:50W10.5 V4 A350 V4 A100350 V3505 V-30(Min) MHz59.28mm10.28mm30 MHz350 V30 MHz30 MHz--3509.28 x 10.28 x 4.82mm4.82mm-430(Min)5 V------100Bipolar Power--------------------------------------------------------------------------------------------------------------------------------------------------------------------
MJE170G
5
MJE170G

Trans GP BJT PNP 40V 3A 3-Pin TO-225 Bulk

on semiconductor

询价3TO-225PNP3Through HoleBoxedBulkThrough HoleTO225AATO-225AA, TO-126-3Lead free / RoHS Compliant+ 150 C- 65 CTO-225500Transistors Bipolar - BJTThrough HoleRoHS Compliant12.5 W0.0006885412900-65C to 150C1MilitaryNo:3Compliant150-65TO-22540 V3 A50@100mA@1V|30@500mA@1V|12@1.5A@1V0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A V-65 to 150 °C12500 mW125003APNP1.7V @ 600mA, 3A40V50 @ 100mA, 1VSinglePNP5040 V:40V:-3A:50MJE170GOS--50MHz1.5W7 V60 V3 A:50MHz:12.5W11.7 V3 A40 V3 A5060 V407 V:-50(Min) MHz7--50 MHz60 V50 MHz50 MHz--60---350(Min)-------50---------------------------------------------------------------------------------------------------------------------------------------------------------------------
MJE182G
6
MJE182G

Trans GP BJT NPN 80V 3A 3-Pin(3+Tab) TO-225 Box

on semiconductor

询价3TO-225NPN3Through HoleBulkBoxThrough HoleTO225AATO-225AA, TO-126-3Lead free / RoHS Compliant+150 °C-65 °CTO-225AA500Transistors Bipolar - BJTThrough HoleRoHS Compliant12.5 W0.00285411000-65C to 150C1MilitaryNo:3Compliant150-65TO-22580 V3 A50@100mA@1V|30@500mA@1V|12@1.5A@1V0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A V-65 to 150 °C12500 mW125003ANPN1.7V @ 600mA, 3A80V50 @ 100mA, 1VSingleNPN5080 V:80V:3A:50MJE182GOS--50MHz1.5W7 V100 V3 A:50MHz:12.5W11.7 V3 A80 V3 A50100 V807 V:-50(Min) MHz711.1mm7.8mm50 MHz100 V50 MHz50 MHz--1007.8 x 3 x 11.1mm3mm-350(Min)7 V-2 V-TO-225AANPN1.5W50Bipolar Power3A12Si80V80V1.7V7V--------80V10°C/W---------------------------------------------------------------------------------------------------------------------------------------------------
MJL1302AG
6
MJL1302AG

Trans GP BJT PNP 200V 15A 3-Pin(3+Tab) TO-3BPL Rail

on semiconductor

询价3TO-3BPLPNP3Through HoleRail / TubeTubeThrough HoleTO-264TO-264-3, TO-264AALead free / RoHS Compliant+ 150 C- 65 CTO-3BPL25Transistors Bipolar - BJTThrough HoleRoHS Compliant200 W0.0000185412900-65C to 150C1MilitaryNo:3----200 V15 A60@100mA@5V|60@1A@5V|60@3A@5V|60@5A@5V|60@7A@5V|45@8A@5V|12@15A@5V3@1A@10A V-65 to 150 °C200000 mW-15APNP3V @ 1A, 10A260V75 @ 5A, 5VSinglePNP60200 V:200V:15A:175MJL1302AGOS--30MHz200W7 V230 V15 A:30MHz:200W-3 V15 A200 V15 A60230 V-7 V:-30(Typ) MHz---30 MHz230 V30 MHz30 MHz:-65°C:150°C---:No SVHC (20-Jun-2013)---:TO-264-:-65°C to +150°C-----------------:-3V:20MHz:60-------------------------------------------------------------:15A:7A:MJL1302A-----------:15A:25°C:30MHz:1:200W:200V----------------------------------------------------------------:15A:25A--
MMBT2222ALT1G
9
MMBT2222ALT1G

Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R

on semiconductor

询价3SOT-23NPN3Surface MountTape & ReelTape and ReelSurface MountSOT-23TO-236-3, SC-59, SOT-23-3Lead free / RoHS Compliant+150 °C-55 °CSOT-233000Transistors Bipolar - BJTSMD/SMTRoHS Compliant0.3 W0.00285412100-55C to 150C1MilitaryNo:3Compliant150-55SOT-2340 V0.6 A35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V0.3@15mA@150mA|1@50mA@500mA V-55 to 150 °C300 mW300600mANPN1V @ 50mA, 500mA40V100 @ 150mA, 10VSingleNPN10040 V:40V:600mA:300MMBT2222ALT1GOSCTSOT-23Gull-wing300MHz225mW6 V75 V0.6 A:300MHz:225mW11 V0.6 A40 V0.6 A3575 V406 V:MSL 1 - Unlimited300(Min) MHz60.94mm2.9mm300 MHz (Min)75 V300 MHz300 MHz:-55°C:150°C750.94 x 2.9 x 1.3mm1.3mm:No SVHC (20-Jun-2013)0.6300(Min)6 V:SOT-232 V:-55°C to +150°CSOT-23NPN225mW-Bipolar Small Signal600mA40Si40V40V1V6V-----:300mV:300MHz:10075V-SOT2310.03 g30003000---------------------------------------------------:SMD---:300mA-NPNbipolar40V600mA-------------------------------------------------------------------------------:100:1.1A
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