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Microchip Technology Inc.
场效应晶体管（FET）

Microchip Technology Inc.- 场效应晶体管（FET）

微芯科技公司（Microchip Technology Inc.）成立于1989年，总部位于美国亚利桑那州钱德勒市。公司是全球领先的微控制器、模拟、混合信号和闪存IP解决方案供应商。产品线覆盖8位、16位和32位微控制器（MCU），包括经典的PIC、AVR、SAM系列以及dsPIC数字信号控制器。8位MCU主要包含PIC10、PIC12、PIC16、PIC18等系列，AVR系列提供低功耗高性能的8位和32位MCU，SAM系列基于ARM Cortex-M内核，另有PIC32系列32位MCU和dsPIC33系列数字信号控制器。除了MCU，微芯还提供丰富的模拟产品，如电源管理、线性、混合信号、热管理和射频器件。近年来通过收购增添了PolarFire系列FPGA，进一步完善系统解决方案能力。在全球微控制器市场中，微芯长期占据8位MCU市场首位，整体MCU市场份额位居前列。凭借低功耗、高性能、高集成度和易用性等优势，其产品广泛应用于汽车、工业、消费电子、航空航天、国防及物联网等众多领域。公司以低风险开发、更低系统总成本和快速上市时间著称，并提供卓越的技术支持与可靠的交付质量。

MODELS

场效应晶体管（FET） - 型号列表共 180 个型号

制造商零件编号	价格/库存	FET Feature	Packaging	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Standard Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) @ Vds	Package / Case	Mounting Style	Transistor Polarity	RoHS	Configuration	Minimum Operating Temperature	Typical Turn-Off Delay Time	Maximum Operating Temperature	Channel Mode	Typical Turn-On Delay Time	Rise Time	Fall Time	Height	Length	Width	Unit Pack	MOQ	Current - Continuous Drain (Id) @ 25° C	Power - Max	Gate Charge (Qg) @ Vgs	Package/Case	rohs	Other Names	Continuous Drain Current	Rds On	Power Dissipation	Drain-Source Breakdown Voltage	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Power Dissipation Pd	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	No. of Pins	MSL	SVHC	Weight (kg)	Tariff No.	Brand	Technology	Category	Channel Type	Dimensions	Maximum Continuous Drain Current	Maximum Drain Source Resistance	Maximum Drain Source Voltage	Maximum Gate Source Voltage	Maximum Power Dissipation	Number of Elements per Chip	Package Type	Pin Count	Typical Gate Charge @ Vgs	Typical Input Capacitance @ Vds	Factory Pack Quantity	Vds - Drain-Source Breakdown Voltage	Transistor Type	Number of Channels	Rds On - Drain-Source Resistance	Product	Forward Transconductance - Min	Gate Charge Qg	Id - Continuous Drain Current	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Type	Series
3 MCP87130T-U/LC MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.7V @ 250µA	8-PDFN (3x3)	13.5 mOhm @ 10A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	400pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Single Triple Source	- 55 C	4.2 ns	+ 150 C	-	-	5.4 ns	2.1 ns	-	-	-	3300	3300	42A (Tc)	1.8W	8nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87130T-U/LCCT	42 A	13.8 mOhms	1.8 W	25 V	:42A	:25V	:0.0173ohm	:3.3V	:1.35V	:1.8W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40 S	5.5 nC	-	-	-	-	-
4 MCP87090T-U/LC MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.7V @ 250µA	8-PDFN (3x3)	10.5 mOhm @ 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	580pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	5.3 ns	+150 °C	Enhancement	2.5 ns	9.3 ns	2.9 ns	1mm	3.3mm	3.3mm	3300	3300	48A (Tc)	2.2W, 1.8W	10nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87090T-U/LCCT	48 A	10 mOhms	1.8 W	25 V	:48A	:25V	:0.01ohm	:4.5V	:1.35V	:1.8W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	3.3 x 3.3 x 1mm	48 A	12 mΩ	25 V	10 V, -8 V	1.8 W	1	PDFN	8	7.5 nC @ 4.5 V	580 pF @ 12.5 V	-	-	-	-	-	-	62 S	7.5 nC	-	-	-	-	-
5 MCP87055T-U/LC MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.7V @ 250µA	8-PDFN (3x3)	6 mOhm @ 20A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	890pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	9 ns	+150 °C	Enhancement	4.5 ns	-	-	1mm	3.3mm	3.3mm	3300	3300	60A (Tc)	1.8W	14nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87055T-U/LCCT	60 A	5.7 mOhms	1.8 W	25 V	:60A	:25V	:0.0057ohm	:4.5V	:1.35V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	3.3 x 3.3 x 1mm	60 A	7 mΩ	25 V	10 V, -8 V	1.8 W	1	PDFN	8	11 nC @ 4.5 V	890 pF @ 12.5 V	-	-	-	-	-	-	-	-	-	-	-	-	-
4 MCP87130T-U/MF MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.7V @ 250µA	8-PDFN (5x6)	13.5 mOhm @ 10A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	400pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	4.2 ns	+150 °C	Enhancement	2.2 ns	5.4 ns	2.1 ns	1mm	5mm	6mm	3300	3300	54A (Tc)	2.2W	8nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87130T-U/MFCT	54 A	13.8 mOhms	2.2 W	25 V	:54A	:25V	:0.0173ohm	:3.3V	:1.35V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	54 A	17.3 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	5.5 nC @ 4.5 V	400 pF @ 12.5 V	-	-	-	-	-	-	40 S	5.5 nC	-	-	-	-	-
5 MCP87090T-U/MF MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.7V @ 250µA	8-PDFN (5x6)	10.5 mOhm @ 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	580pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	5.3 ns	+150 °C	Enhancement	2.5 ns	9.3 ns	2.9 ns	1mm	5mm	6mm	3300	3300	64A (Tc)	2.2W	10nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87090T-U/MFCT	64 A	10 mOhms	2.2 W	25 V	:64A	:25V	:0.01ohm	:4.5V	:1.35V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	64 A	12 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	7.5 nC @ 4.5 V	580 pF @ 12.5 V	-	-	-	-	-	-	62 S	7.5 nC	-	-	-	-	-
4 MCP87050T-U/MF MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.6V @ 250µA	8-PDFN (5x6)	5 mOhm @ 20A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	1040pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	11 ns	+150 °C	Enhancement	5 ns	-	-	1mm	5mm	6mm	3300	3300	100A (Tc)	2.2W	15nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87050T-U/MFCT	100 A	5 mOhms	2.2 W	25 V	:100A	:25V	:0.005ohm	:4.5V	:1.3V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	100 A	6 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	12.5 nC @ 4.5 V	1040 pF @ 12.5 V	-	-	-	-	-	-	-	-	-	-	-	-	-
4 MCP87030T-U/MF MOSFET N-CH 25V 100A 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.6V @ 250µA	8-PDFN (5x6)	3.5 mOhm @ 20A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	1635pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	14 ns	+150 °C	Enhancement	5 ns	17 ns	16 ns	1mm	5mm	6mm	3300	3300	100A (Tc)	2.2W	22nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87030T-U/MFCT	100 A	3.3 mOhms	2.2 W	25 V	:100A	:25V	:0.0028ohm	:10V	:1.3V	:2.2W	:-55°C	:150°C	:PDFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	100 A	4 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	17 nC @ 4.5 V	1635 pF @ 12.5 V	-	-	-	-	-	-	113 S	17 nC	-	-	-	-	-
4 MCP87022T-U/MF MOSFET N-CH 25V 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.6V @ 250µA	8-PDFN (5x6)	2.3 mOhm @ 25A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	2310pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	21 ns	+150 °C	Enhancement	7.6 ns	-	-	1mm	5mm	6mm	3300	3300	100A (Tc)	2.2W	29nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87022T-U/MFCT	100 A	2.2 mOhms	2.2 W	25 V	:100A	:25V	:0.0022ohm	:4.5V	:1.3V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	100 A	2.6 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	25.5 nC @ 4.5 V	2310 pF @ 12.5 V	-	-	-	-	-	-	-	-	-	-	-	-	-
5 MCP87018T-U/MF MOSFET N-CH 25V 100A 8PDFN Microchip Technology	询价	Logic Level Gate	Tape & Reel (TR)	Surface Mount	1.6V @ 250µA	8-PDFN (5x6)	1.9 mOhm @ 25A, 10V	MOSFET N-Channel, Metal Oxide	3,300	25V	2925pF @ 12.5V	PDFN-8	SMD/SMT	N-Channel	RoHS Compliant	Quad Drain, Triple Source	-55 °C	26.35 ns	+150 °C	Enhancement	6.53 ns	28.3 ns	28.05 ns	1mm	5mm	6mm	3300	3300	100A (Tc)	2.2W	37nC @ 4.5V	8-PowerTDFN	Lead free / RoHS Compliant	MCP87018T-U/MFCT	100 A	2.2 mOhms	2.2 W	25 V	:100A	:25V	:0.0018ohm	:4.5V	:1.3V	:2.2W	:-55°C	:150°C	:DFN	:8	:MSL 1 - Unlimited	:No SVHC (16-Dec-2013)	0.10472	85412900	-	-	Power MOSFET	N	5 x 6 x 1mm	100 A	2.2 mΩ	25 V	10 V, -8 V	2.2 W	1	PDFN	8	32.5 nC @ 4.5 V	2925 pF @ 12.5 V	-	-	-	-	-	-	162 S	32.5 nC	-	-	-	-	-
TC8020K6-G MOSFET 6N/6P-CH 200V 56VQFN Microchip Technology	询价	Standard	*	*	2.4V @ 1mA	*	8 Ohm @ 1A, 10V	6 N and 6 P-Channel	250	200V	50pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	-	-	-	-	-	Enhancement	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	250	200 V, - 200 V	6 N-Channel, 6 P-Channel	12 Channel	9 Ohms, 10 Ohms	-	-	-	-	-	-	-	-
LP1030DK1-G MOSFET 2P-CH 300V 5SOT-23 Microchip Technology	询价	Standard	*	*	2.4V @ 1mA	*	180 Ohm @ 20mA, 7V	2 P-Channel (Dual)	2,500	300V	10.8pF @ 25V	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TC6320K6-G MOSFET N/P-CH 200V 8VDFN Microchip Technology	询价	Standard	*	*	2V @ 1mA	*	7 Ohm @ 1A, 10V	N and P-Channel	3,000	200V	110pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	Dual Dual Drain	- 55 C	20 ns	+ 150 C	Enhancement	10 ns	15 ns	15 ns	1.37 mm	4.89 mm	3.91 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	200 V	1 N-Channel, 1 P-Channel	2 Channel	7 Ohms, 8 Ohms	MOSFET Small Signal	-	-	5.2 A	-	-	-	-
TC6320TG-G MOSFET N/P-CH 200V 8SOIC Microchip Technology	询价	Standard	*	*	2V @ 1mA	*	7 Ohm @ 1A, 10V	N and P-Channel	2,000	200V	110pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	Dual Dual Drain	- 55 C	20 ns	+ 150 C	Enhancement	10 ns	15 ns	15 ns	1.65 mm	4.9 mm	3.9 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	200 V	1 N-Channel, 1 P-Channel	2 Channel	8 Ohms, 7 Ohms	MOSFET Small Signal	-	-	2 A	-	-	-	-
TC6215TG-G MOSFET N/P-CH 150V 8SOIC Microchip Technology	询价	Standard	*	*	2V @ 1mA	*	4 Ohm @ 2A, 10V	N and P-Channel	2,000	150V	120pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	1 N-Channel, 1 P-Channel	- 55 C	17.2 ns, 16.2 ns	+ 150 C	Enhancement	2.5 ns, 2.4 ns	2.3 ns, 2.3 ns	11.3 ns, 11.1 ns	1.65 mm	4.9 mm	3.8 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	150 V, - 150 V	1 N-Channel, 1 P-Channel	2 Channel	4 Ohms, 7 Ohms	MOSFET Small Signal	-	-	-	+/- 20 V, +/- 20 V	1 V, - 2 V	Enhancement Mode Dual Channel N & P	TC621
TD9944TG-G MOSFET 2N-CH 240V 8SOIC Microchip Technology	询价	Standard	*	*	2V @ 1mA	*	6 Ohm @ 500mA, 10V	2 N-Channel (Dual)	2,000	240V	125pF @ 25V	*	SMD/SMT	N-Channel	RoHS Compliant	Dual Dual Drain	- 55 C	20 ns	+ 150 C	Enhancement	10 ns	10 ns	10 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	240 V	2 N-Channel	2 Channel	6 Ohms	MOSFET Small Signal	-	-	1 A	20 V	-	-	-
TC2320TG-G MOSFET N/P-CH 200V 8SOIC Microchip Technology	询价	Standard	*	*	2V @ 1mA	*	7 Ohm @ 1A, 10V	N and P-Channel	2,000	200V	110pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	Dual Dual Drain	- 55 C	25 ns, 20 ns	+ 150 C	Enhancement	20 ns, 10 ns	15 ns	15 ns	1.65 mm	4.9 mm	3.9 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	200 V	1 N-Channel, 1 P-Channel	2 Channel	7 Ohms, 12 Ohms	MOSFET Small Signal	-	-	2 A	20 V	-	-	-
TC7920K6-G MOSFET 2N/2P-CH 200V 12VDFN Microchip Technology	询价	Standard	*	*	2.4V @ 1mA	*	10 Ohm @ 1A, 10V	2 N and 2 P-Channel	3,000	200V	52pF @ 25V	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TC8220K6-G MOSFET 2N/2P-CH 200V 12VDFN Microchip Technology	询价	Standard	*	*	2.4V @ 1mA	*	6 Ohm @ 1A, 10V	2 N and 2 P-Channel	3,000	200V	56pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	2 N-Channel, 2 P-Channel	- 55 C	20 ns, 20 ns	+ 150 C	Enhancement	-	15 ns, 15 ns	15 ns, 15 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	200 V, - 200 V	2 N-Channel, 2 P-Channel	4 Channel	6 Ohms, 7 Ohms	MOSFET Small Signal	-	-	2.3 A, - 2.3 A	10 V, - 10 V	1 V, - 2.4 V	-	-
TC1550TG-G MOSFET N/P-CH 500V 8SOIC Microchip Technology	询价	Standard	*	*	4V @ 1mA	*	60 Ohm @ 50mA, 10V	N and P-Channel	2,000	500V	55pF @ 25V	*	SMD/SMT	N-Channel, P-Channel	RoHS Compliant	1 N-Channel, 1 P-Channel	- 55 C	10 ns, 15 ns	+ 150 C	Enhancement	10 ns	15 ns, 10 ns	15 ns, 10 ns	1.65 mm	4.9 mm	3.9 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	3300	500 V	1 N-Channel, 1 P-Channel	2 Channel	125 Ohms	MOSFET Small Signal	-	-	16 A	20 V	-	-	-
TC8020K6-G-M937 MOSFET 6N/6P-CH 200V 56VQFN Microchip Technology	询价	Standard	*	*	2.4V @ 1mA	*	8 Ohm @ 1A, 10V	6 N and 6 P-Channel	2,000	200V	50pF @ 25V	*	-	-	RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Microchip Technology Inc.- 场效应晶体管（FET）

场效应晶体管（FET） - 型号列表共 180 个型号

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) @ Vds

Typical Turn-Off Delay Time

Other Names

Rise Time

Fall Time

Typical Turn-On Delay Time

Rds On - Drain-Source Resistance

Gate Charge (Qg) @ Vgs

On Resistance Rds(on)

Maximum Drain Source Resistance

Typical Gate Charge @ Vgs

Typical Input Capacitance @ Vds

Current - Continuous Drain (Id) @ 25° C

FET Type

Drain to Source Voltage (Vdss)

Continuous Drain Current

Rds On

Continuous Drain Current Id

Vgs(th) (Max) @ Id

Standard Package

Configuration

Maximum Continuous Drain Current

Width

Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Forward Transconductance - Min

Gate Charge Qg

Length

Transistor Type

Supplier Device Package

Power - Max

Rds(on) Test Voltage Vgs

Height

Number of Channels

Vgs - Gate-Source Voltage

FET Feature

Packaging

Mounting Type

Transistor Polarity

Power Dissipation

Minimum Operating Temperature

Package / Case

Maximum Operating Temperature

Threshold Voltage Vgs

Power Dissipation Pd

Transistor Case Style

Dimensions

Maximum Power Dissipation

Factory Pack Quantity

Vgs th - Gate-Source Threshold Voltage