International Rectifier- 单场效应晶体管

国际整流器公司（International Rectifier，简称IR）成立于1947年，总部位于美国加利福尼亚州埃尔塞贡多，是全球功率半导体和管理方案的先驱与领导厂商。IR于2015年被英飞凌科技收购，但其品牌和产品线依然作为核心部分延续至今。公司核心业务涵盖模拟与混合信号集成电路、先进功率器件和集成功率系统，广泛应用于高性能计算、高效电机驱动、汽车电子及航空航天等领域。其标志性产品系列包括HEXFET功率MOSFET、IGBT、高压集成电路（HVIC）、智能功率模块（IPM）以及各类电源管理芯片。IR凭借HEXFET技术彻底革新了功率MOSFET市场，确立了快速开关和低导通电阻的行业基准。这些创新帮助客户实现更高能效、更小尺寸和更低成本的电源转换与电机控制方案。在被收购前，IR长期位居全球分立功率半导体供应商前列，尤其在计算机电源和汽车电机驱动领域占有重要市场份额。凭借深厚的知识产权和数十年技术积淀，IR的解决方案成为下一代计算机、节能电器、照明、车辆和卫星系统的电源管理标杆。如今作为英飞凌的重要组成部分，IR继续通过遍布全球的设计中心、制造基地和分销网络推动电源管理技术进步，其中包括位于中国天津的大型封装和测试工厂，并在深圳、上海、北京等地设有代理和研发机构。

MODELS

单场效应晶体管 - 型号列表共 2,500 个型号

制造商零件编号	价格/库存	Package	Mounting	Standard Package	Packaging	Mounting Type	Supplier Device Package	Power - Max	Package / Case	rohs	Factory Pack Quantity	Transistor Polarity	Mounting Style	Power Dissipation	RoHS	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Maximum Gate Source Voltage	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Operating Temperature	FET Feature	Current - Continuous Drain (Id) @ 25° C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) @ Vds	Gate Charge (Qg) @ Vgs	Gate-Source Breakdown Voltage	Continuous Drain Current	Drain-Source Breakdown Voltage	Gate Charge Qg	Package Type	Pin Count	Case	Transistor type	Power	Multiplicity	Gross weight	Collective package [pcs]	spg	Typical Fall Time	Configuration	Minimum Operating Temperature	Maximum Operating Temperature	Polarity	Type	Operating Temperature Classification	Rad Hardened	PackageType	PowerDissipation	Drain-source voltage	Polarisation	Drain current	Gate-Source Voltage (Max)	Drain-Source On-Res	Operating Temp Range	Number of Elements	Drain-Source On-Volt	Current,Drain	GateCharge,Total	Polarization	Resistance,DraintoSourceOn	Time,Turn-OffDelay	Time,Turn-OnDelay	Voltage,Breakdown,DraintoSource	Voltage,Forward,Diode	Voltage,GatetoSource	Channel Type	Weight (kg)	Tariff No.	Temperature,Operating,Maximum	Temperature,Operating,Minimum	Transconductance,Forward	Number of Elements per Chip	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Power Dissipation Pd	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	No. of Pins	MSL	SVHC	Operating Temperature Range	Transistor kind	Drain Current (Max)	Frequency (Max)	Output Power (Max)	Noise Figure	Drain Efficiency	Power Gain	Height	Voltage Vgs Max	Voltage Vgs Rds on Measurement	Category	Maximum Drain Source Resistance	Maximum Power Dissipation	Typical Gate Charge @ Vgs	Typical Input Capacitance @ Vds	Pulse Current Idm	Gate charge	gate-source voltage	On-state resistance	Rise Time	DELETED	Current Id Max	Voltage Vds Typ	Rds On	Fall Time	Dimensions	Length	Width	EU RoHS	Maximum Operating Temperature	Standard Package Name	Minimum Operating Temperature	Supplier Package	Maximum Power Dissipation	Lead Shape	Maximum Gate Source Voltage	Maximum Drain Source Resistance	Maximum Drain Source Voltage	Maximum Continuous Drain Current	Package/Case	Other Names	Current Temperature	Full Power Rating Temperature	No. of Transistors	Termination Type	Junction to Case Thermal Resistance A	SMD Marking	Junction-to-case thermal resistance	Forward Transconductance - Min	ChannelType	External Depth	External Length / Height	External Width	Junction-to-ambient thermal resistance	Voltage,DraintoSource	Pin Format	Resistance,Thermal,JunctiontoCase	Row Pitch	Pin Configuration	Voltage Vgs th Max	Package Height	Package Width	Package Length	PCB	Lead Spacing	Package type	Junction Temperature Tj Min	Alternate Case Style	Life	Tape Width	Continuous Drain Current Id, N Channel	Drain Source Voltage Vds, N Channel	Junction Temperature Tj Max	Module Configuration	On Resistance Rds(on), N Channel	Temperature,Operating	ThermalResistance,JunctiontoAmbient	Fall Time tf	On State resistance @ Vgs = 10V	Tab	Maximum Collector Emitter Voltage	Maximum Continuous Collector Current	Maximum Gate Emitter Voltage	Maximum Gate Emitter Voltage	Maximum Continuous Collector Current	Maximum Collector Emitter Voltage	Gate Charge	Current - Collector (Ic) (Max)	Switching Energy	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Input Type	Test Condition	Current - Collector Pulsed (Icm)	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Collector- Emitter Voltage VCEO Max	Collector Current (DC) (Max)	Collector-Emitter Voltage	Operating Temperature (Max)	Operating Temperature (Min)	Gate to Emitter Voltage (Max)	Collector Current (DC)	Transistor Type	DC Collector Current	Collector Emitter Voltage Vces	Collector Emitter Voltage V(br)ceo	Current Ic Continuous a Max	Fall Time Max	Power Dissipation Max	Pulsed Current Icm	Voltage Vces	Capacitance,Gate	Current,Collector	EnergyRating	Speed,Switching	Voltage,CollectortoEmitterShorted	Voltage,CollectortoEmitter,Saturation	Collector-emitter voltage	Collector current	Device Marking
IRFB4321GPBF Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	330W	TO-220-3	Lead free / RoHS Compliant	50	N-Channel	Through Hole	330 W	RoHS Compliant	Enhancement	150 V	83 A	15@10V mOhm	±30 V	18 ns	60 ns	25 ns	-55 to 175 °C	Standard	83A (Tc)	5V @ 250µA	150V	15 mOhm @ 33A, 10V	MOSFET N-Channel, Metal Oxide	4460pF @ 25V	110nC @ 10V	30 V	83 A	150 V	71 nC	-	-	-	-	-	-	-	-	-	35 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IRF640NSTRLPBF Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R international rectifier	询价	3D2PAK	Surface Mount	Tape & Reel	Tape & Reel (TR)	Surface Mount	D2PAK	150W	D2PAK	Lead free / RoHS Compliant	800	N-Channel	SMD/SMT	150 W	RoHS Compliant	Enhancement	200 V	18 A	150@10V mOhm	±20 V	10 ns	19 ns	23 ns	-55 to 175 °C	Standard	18A (Tc)	4V @ 250µA	200V	150 mOhm @ 11A, 10V	MOSFET N-Channel, Metal Oxide	1160pF @ 25V	67nC @ 10V	+/- 20 V	18 A	200 V	44.7 nC	D2PAK	2 +Tab	D2PAK	N-MOSFET	150W	800	0.43 g	800	800	5.5 ns	Single	- 55 C	+ 175 C	N	Power MOSFET	Military	No	D2Pak	150W	200V	unipolar	18A	�20 V	0.15 ohm	-55C to 175C	1	200 V	18A	67nC	N-Channel	0.15Ohm	23ns	10ns	200V	1.3V	±20V	-	-	-	+175°C	-55°C	6.8S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	-	-	-	-	-	-	-	-	-	-	-	-	19 ns	Compliant	-	-	150 mOhms	5.5 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	IRF640NSTRLPBFCT	-	-	-	-	-	-	-	6.8 S	N	-	-	-	-	200V	-	1°C/W	-	-	-	-	-	-	-	-	roll	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRF7313PBF Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC international rectifier	询价	8SOIC	Surface Mount	Rail / Tube	Tube	Surface Mount	8-SO	2W	SOIC-8	Lead free / RoHS Compliant	95	N-Channel	SMD/SMT	2 W	RoHS Compliant	Enhancement	30 V	6.5 A	29@10V mOhm	±20 V	8.1 ns	8.9 ns	26 ns	-55 to 150 °C	Standard	6.5A	1V @ 250µA	30V	29 mOhm @ 5.8A, 10V	2 N-Channel (Dual)	650pF @ 25V	33nC @ 10V	20 V	6.5 A	30 V	22 nC	SOIC	8	SO8	N-MOSFET x2	2W	1	0.2 g	665	665	17 ns	Dual, Dual Drain	-55 °C	+150 °C	N	Power MOSFET	Military	No	SO-8	2W	30V	unipolar	6.5A	�20 V	0.029 ohm	-55C to 150C	2	30 V	6.5A	22nC	N-Channel	0.029Ohms	26ns	8.1ns	30V	1.2V	±20V	N	0.0005	85412900	-	-	14S	2	:6.5A	:30V	:29mohm	:10V	:1V	:2W	:-55°C	:150°C	:SOIC	:8	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	6.5 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.5mm	:1V	:10V	Power MOSFET	0.029 Ω	2 W	22 nC V @ 10	650 pF V @ 25	:30A	22nC	20V	29mΩ	8.9 ns	Compliant	:6.5A	:30V	46 mOhms	17 ns	5 x 4 x 1.5mm	5mm	4mm	-	-	-	-	-	-	-	-	-	-	-	8-SOIC (0.154", 3.90mm Width)	-	:25°C	:25°C	:2	-	-	:7313	-	-	-	:5.2mm	:1.75mm	:4.05mm	62.5K/W	-	-	-	:6.3mm	-	-	-	-	-	-	-	-	:-55°C	-	-	-	:6.5A	:30V	:150°C	:Dual	:0.032ohm	-55to150°C	62.5°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRF7413PBF Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R international rectifier	询价	8SOIC	Surface Mount	Rail / Tube	Tape and Reel	Surface Mount	8-SO	2.5W	8-SOIC (0.154", 3.90mm Width)	Lead free / RoHS Compliant	95	N-Channel	SMD/SMT	2.5 W	RoHS Compliant	Enhancement	30 V	13 A	11@10V mOhm	±20 V	8.6 ns	50 ns	52 ns	-55 to 150 °C	Logic Level Gate	13A (Ta)	3V @ 250µA	30V	11 mOhm @ 7.3A, 10V	MOSFET N-Channel, Metal Oxide	1800pF @ 25V	79nC @ 10V	20 V	13 A	30 V	44 nC	SOIC	8	SO8	N-MOSFET	2.5W	1	0.18 g	285	285	46 ns	Quad Drain, Single, Triple Source	-55 °C	+150 °C	N	Power MOSFET	Military	No	SO-8	2.5W	30V	unipolar	13A	�20 V	0.011 ohm	-55C to 150C	1	30 V	13A	52nC	N-Channel	0.011Ohm	52ns	8.6ns	30V	1V	±20V	N	0.0005	85412900	+150°C	-55°C	10S	1	:12A	:30V	:10mohm	:10V	:3V	:2.5W	:-55°C	:150°C	:SOIC	:8	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	13 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.5mm	:3V	:10V	Power MOSFET	0.011 Ω	2.5 W	52 nC V @ 10	1800 pF V @ 25	:58A	44nC	20V	11mΩ	50 ns	Compliant	:13A	:30V	18 mOhms	46 ns	5 x 4 x 1.5mm	5mm	4mm	Compliant	150	SOIC	-55	SOIC	2500	Gull-wing	±20	11@10V	30	13	-	-	:25°C	:25°C	:1	-	-	:F7413	-	-	-	:5.2mm	:1.75mm	:4.05mm	50K/W	-	:1 S	-	:6.3mm	:b	-	-	-	-	-	-	-	:-55°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IRF7493PBF Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC international rectifier	询价	8SOIC	Surface Mount	Rail / Tube	Tube	Surface Mount	8-SO	2.5W	8-SOIC (0.154", 3.90mm Width)	Lead free / RoHS Compliant	95	N-Channel	SMD/SMT	2.5 W	RoHS Compliant	Enhancement	80 V	9.3 A	15@10V mOhm	±20 V	8.3 ns	7.5 ns	30 ns	-55 to 150 °C	Logic Level Gate	9.3A (Tc)	4V @ 250µA	80V	15 mOhm @ 5.6A, 10V	MOSFET N-Channel, Metal Oxide	1510pF @ 25V	53nC @ 10V	20 V	9.2 A	80 V	31 nC	SOIC	8	SO8	N-MOSFET	2.5W	1	0.22 g	100	100	12 ns	Quad Drain, Single, Triple Source	-55 °C	+150 °C	N	Power MOSFET	Military	No	SO-8	2.5W	80V	unipolar	9.2A	�20 V	0.015 ohm	-55C to 150C	1	80 V	9.3A	35nC	N-Channel	11.5Milliohms	30ns	8.3ns	80V	1.3V	±20V	N	0.0005	85412900	+150°C	-55°C	13S	1	:9.3A	:80V	:15mohm	:10V	:4V	:2.5W	:-55°C	:150°C	:SOIC	:8	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	9.3 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.5mm	:20V	:10V	Power MOSFET	0.015 Ω	2.5 W	35 nC V @ 10	1510 pF V @ 25	:74A	31nC	20V	15mΩ	7.5 ns	Compliant	:9.3A	:80V	15 mOhms	12 ns	5 x 4 x 1.5mm	5mm	4mm	Compliant	150	SOIC	-55	SOIC	2500	Gull-wing	±20	15@10V	80	9.3	-	-	-	-	:1	:SMD	-	-	-	-	-	-	-	-	50K/W	-	-	-	-	:(1+2+3)S,4G, (8+7+6+5)D	-	1.5(Max)	4(Max)	5(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	:12ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRF7809AVPBF Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC international rectifier	询价	8SOIC	Surface Mount	Rail / Tube	Tube	Surface Mount	8-SO	2.5W	8-SOIC (0.154", 3.90mm Width)	Lead free / RoHS Compliant	95	N-Channel	SMD/SMT	2.5 W	RoHS Compliant	Enhancement	30 V	13.3 A	9@4.5V mOhm	±12 V	14 ns	36 ns	96 ns	-55 to 150 °C	Logic Level Gate	13.3A (Ta)	1V @ 250µA	30V	9 mOhm @ 15A, 4.5V	MOSFET N-Channel, Metal Oxide	3780pF @ 16V	62nC @ 5V	12 V	13.3 A	30 V	41 nC	SOIC	8	SO8	N-MOSFET	2.5W	1	0.43 g	95	95	10 ns	Quad Drain, Single, Triple Source	-55 °C	+150 °C	N	Power MOSFET	Military	No	SO-8	2.5W	30V	unipolar	13.3A	�12 V	0.009 ohm	-55C to 150C	1	30 V	13.3A	41nC	N-Channel	7Milliohms	96ns	14ns	30V	1.3V	±12V	N	0.0005	85412900	+150°C	-55°C	-	1	:14.5A	:30V	:8.5mohm	:4.5V	:1V	:2.5W	:-55°C	:150°C	:SOIC	:8	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:-55°C to +150°C	-	13.3 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.5mm	:1V	:4.5V	Power MOSFET	0.009 Ω	2.5 W	41 nC V @ 5	3780 pF V @ 16	:100A	-	-	-	36 ns	-	:13.3A	:30V	9 mOhms	10 ns	5 x 4 x 1.5mm	5mm	4mm	Compliant	150	SOIC	-55	SOIC	2500	Gull-wing	±12	9@4.5V	30	13.3	-	-	:25°C	:25°C	:1	-	-	:F7809	-	-	-	:5.2mm	:1.75mm	:4.05mm	-	-	:1 S	-	:6.3mm	:b	-	1.5(Max)	4(Max)	5(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRF7821PBF Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC international rectifier	询价	8SOIC	Surface Mount	Rail / Tube	Tube	Surface Mount	8-SO	2.5W	8-SOIC (0.154", 3.90mm Width)	Lead free / RoHS Compliant	95	N-Channel	SMD/SMT	2.5 W	RoHS Compliant	Enhancement	30 V	13.6 A	9.1@10V mOhm	±20 V	6.3 ns	2.7 ns	9.7 ns	-55 to 155 °C	Logic Level Gate	13.6A (Ta)	1V @ 250µA	30V	9.1 mOhm @ 13A, 10V	MOSFET N-Channel, Metal Oxide	1010pF @ 15V	14nC @ 4.5V	20 V	13.6 A	30 V	9.3 nC	SOIC	8	SO8	N-MOSFET	2.5W	1	0.16 g	665	665	7.3 ns	Quad Drain, Single, Triple Source	-55 °C	+155 °C	N	Power MOSFET	Military	No	SO-8	2.5W	30V	unipolar	13.6A	�20 V	0.0091 ohm	-55C to 155C	1	30 V	13.6A	9.3nC	N-Channel	7Milliohms	9.7ns	6.3ns	30V	1V	±20V	N	0.0005	85412900	+150°C	-55°C	22S	1	:13.6A	:30V	:9.1mohm	:10V	:1V	:2.5W	:-55°C	:155°C	:SOIC	:8	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:-55°C to +155°C	HEXFET	13.6 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.5mm	:1V	:10V	Power MOSFET	0.009 Ω	2.5 W	9.3 nC V @ 4.5	1010 pF V @ 15	:100A	9.3nC	20V	9.1mΩ	2.7 ns	Compliant	:13.6A	:30V	12.5 mOhms	7.3 ns	5 x 4 x 1.5mm	5mm	4mm	-	-	-	-	-	-	-	-	-	-	-	-	-	:25°C	:25°C	-	:SMD	-	:IRF7821PBF	-	22 S	-	:5.2mm	:1.75mm	:4.05mm	50K/W	-	-	-	:6.3mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IRFP90N20DPBF Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC international rectifier	询价	3TO-247AC	Through Hole	Rail / Tube	Bulk	Through Hole	TO-247AC	580W	TO-247AC	Lead free / RoHS Compliant	25	N-Channel	Through Hole	580 W	RoHS Compliant	Enhancement	200 V	94 A	23@10V mOhm	±30 V	23 ns	160 ns	43 ns	-55 to 175 °C	Standard	94A (Tc)	5V @ 250µA	200V	23 mOhm @ 56A, 10V	MOSFET N-Channel, Metal Oxide	6040pF @ 25V	270nC @ 10V	+/- 30 V	94 A	200 V	180 nC	TO-247AC	3	TO247AC	N-MOSFET	580W	1	7.21 g	50	50	79 ns	Single	-55 °C	+175 °C	N	Power MOSFET	Military	No	TO-247AC	580W	200V	unipolar	94A	�30 V	0.023 ohm	-55C to 175C	1	200 V	94A	180nC	N-Channel	0.023Ohm	43ns	23ns	200V	1.5V	±30V	N	0.006	85412900	+175°C	-55°C	39S	1	:94A	:200V	:23mohm	:10V	:5V	:580W	:-55°C	:175°C	:TO-247AC	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	94 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	20.3mm	:5V	:10V	Power MOSFET	0.023 Ω	580 W	180 nC V @ 10	6040 pF V @ 25	:380A	180nC	30V	23mΩ	160 ns	Compliant	:94A	:200V	23 mOhms	79 ns	15.9 x 5.3 x 20.3mm	15.9mm	5.3mm	Compliant	175	TO-247	-55	TO-247AC	580000	Through Hole	±30	23@10V	200	94	TO-247-3	*IRFP90N20DPBF	-	-	-	-	:0.26°C/W	-	260mK/W	39 S	N	-	-	-	-	200V	-	0.26°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:23mohm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRFR220NPBF Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK international rectifier	询价	3DPAK	Surface Mount	Rail / Tube	Tube	Surface Mount	D-Pak	43W	DPAK	Lead free / RoHS Compliant	75	N-Channel	SMD/SMT	43 W	RoHS Compliant	Enhancement	200 V	5 A	600@10V mOhm	±20 V	6.4 ns	11 ns	20 ns	-55 to 175 °C	Standard	5A (Tc)	4V @ 250µA	200V	600 mOhm @ 2.9A, 10V	MOSFET N-Channel, Metal Oxide	300pF @ 25V	23nC @ 10V	20 V	5 A	200 V	15 nC	DPAK	3	DPAK	N-MOSFET	43W	1	0.63 g	525	525	12 ns	Single	-55 °C	+175 °C	N	Power MOSFET	Military	No	D-Pak(TO-252AA)	43W	200V	unipolar	5A	�20 V	0.6 ohm	-55C to 175C	1	200 V	5A	15nC	N-Channel	600Milliohms	20ns	6.4ns	200V	1.3V	±20V	N	0.0004	85412900	+175°C	-55°C	2.6S	1	:5A	:200V	:600mohm	:10V	:4V	:43W	:-55°C	:175°C	:TO-252	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	5 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.39mm	:4V	:10V	Power MOSFET	0.6 Ω	43 W	15 nC V @ 10	300 pF V @ 25	:20A	15nC	20V	600mΩ	11 ns	-	:5A	:200V	600 mOhms	12 ns	6.73 x 6.22 x 2.39mm	6.73mm	6.22mm	Compliant	175	DPAK	-55	DPAK	43000	Gull-wing	±20	600@10V	200	5	TO-252-3, DPak (2 Leads + Tab), SC-63	-	-	-	-	:SMD	:3.5°C/W	:IRFR220N	3.5K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:D-PAK	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRFR9024NPBF Trans MOSFET P-CH 55V 11A 3-Pin(2+Tab) DPAK international rectifier	询价	3DPAK	Surface Mount	Rail / Tube	Tube	Surface Mount	D-Pak	38W	DPAK	Lead free / RoHS Compliant	75	P-Channel	SMD/SMT	38 W	RoHS Compliant	Enhancement	55 V	11 A	175@10V mOhm	±20 V	13 ns	55 ns	23 ns	-55 to 150 °C	Standard	11A (Tc)	4V @ 250µA	55V	175 mOhm @ 6.6A, 10V	MOSFET P-Channel, Metal Oxide	350pF @ 25V	19nC @ 10V	20 V	11 A	- 55 V	12.7 nC	DPAK	3	DPAK	P-MOSFET	38W	1	0.72 g	450	450	37 ns	Single	-55 °C	+150 °C	P	Power MOSFET	Military	No	D-Pak(TO-252AA)	38W	-55V	unipolar	-11A	�20 V	0.175 ohm	-55C to 150C	1	55 V	-11A	19nC	P-Channel	0.175Ohm	23ns	13ns	-55V	-1.6V	±20V	P	0.0004	85412900	+150°C	-55°C	2.5S	1	:11A	:55V	:175mohm	:-10V	:-4V	:38W	:-55°C	:150°C	:TO-252	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	11 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.39mm	:-4V	:-10V	Power MOSFET	0.175 Ω	38 W	19 nC V @ 10	350 pF V @ 25	:44A	12.7nC	20V	175mΩ	-	Compliant	:-11A	:55V	-	-	6.73 x 6.22 x 2.39mm	6.73mm	6.22mm	Compliant	150	DPAK	-55	DPAK	38000	Gull-wing	±20	175@10V	55	11	TO-252-3, DPak (2 Leads + Tab), SC-63	-	-	-	-	:SMD	:3.3°C/W	:IRFR9024N	3.3K/W	-	P	-	-	-	-	–55V	-	-	-	-	:-4V	2.39(Max)	6.22(Max)	6.73(Max)	2	-	-	-	:D-PAK	New At Mouser	-	-	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRFZ44EPBF Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	110W	TO-220-3	Lead free / RoHS Compliant	50	N-Channel	Through Hole	110 W	RoHS Compliant	Enhancement	60 V	48 A	23@10V mOhm	±20 V	12 ns	60 ns	70 ns	-55 to 175 °C	Standard	48A (Tc)	4V @ 250µA	60V	23 mOhm @ 29A, 10V	MOSFET N-Channel, Metal Oxide	1360pF @ 25V	60nC @ 10V	20 V	48 A	60 V	40 nC	TO-220AB	3	TO220AB	N-MOSFET	110W	1	2.85 g	50	50	-	Single	-55 °C	+175 °C	N	Power MOSFET	Military	No	TO-220AB	110W	60V	unipolar	48A	�20 V	0.023 ohm	-55C to 175C	1	60 V	48A	60nC	N-Channel	0.023Ohm	70ns	12ns	60V	1.3V	±20V	N	0.002	85412900	+175°C	-55°C	15S	1	:48A	:60V	:23mohm	:10V	:4V	:110W	:-55°C	:175°C	:TO-220AB	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	48 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	8.77mm	:4V	:10V	Power MOSFET	0.023 Ω	110 W	60 nC V @ 10	1360 pF V @ 25	:192A	40nC	20V	23mΩ	-	Compliant	:48A	:60V	-	-	-	-	-	Compliant	175	TO-220	-55	TO-220AB	110000	Through Hole	±20	23@10V	60	48	-	*IRFZ44EPBF	:25°C	:25°C	:1	:Through Hole	:1.4°C/W	-	1.4K/W	-	-	-	-	-	-	-	:1 g	-	-	-	-	-	-	-	-	:2.54mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRLL014NPBF Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 international rectifier	询价	4SOT-223	Surface Mount	Rail / Tube	Tube	Surface Mount	SOT-223	1W	TO-261-4, TO-261AA	Lead free / RoHS Compliant	80	N-Channel	SMD/SMT	2.1 W	RoHS Compliant	Enhancement	55 V	2.8 A	140@10V mOhm	±16 V	5.1 ns	4.9 ns	14 ns	-55 to 150 °C	Logic Level Gate	2A (Ta)	2V @ 250µA	55V	140 mOhm @ 2A, 10V	MOSFET N-Channel, Metal Oxide	230pF @ 25V	14nC @ 10V	16 V	2 A	55 V	9.5 nC	SOT-223	4	SOT223	N-MOSFET	2.1W	1	0.24 g	960	960	2.9 ns	Dual Drain, Single	-55 °C	+150 °C	N	Power MOSFET	Military	No	SOT-223	2.1W	55V	unipolar	2A	�16 V	0.14 ohm	-55C to 150C	1	55 V	2.8A	9.5nC	N-Channel	0.14Ohm	14ns	5.1ns	55V	1V	±16V	N	0.0002	85412900	+150°C	-55°C	2.3S	1	:2A	:55V	:140mohm	:10V	:2V	:2.1W	:-55°C	:150°C	:SOT-223	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	2.8 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.7mm	:2V	:10V	Power MOSFET	0.14 Ω	2.1 W	9.5 nC V @ 10	230 pF V @ 25	:16A	9.5nC	16V	140mΩ	4.9 ns	Compliant	:2A	:55V	0.14 Ohms	2.9 ns	6.7 x 3.7 x 1.7mm	6.7mm	3.7mm	-	-	-	-	-	-	-	-	-	-	-	-	-	:25°C	:25°C	:1	-	:60°C/W	:LL014N	-	2.3 S	-	:7.3mm	:1.7mm	:6.7mm	60K/W	-	-	-	-	-	:2V	-	-	-	-	-	-	-	-	-	:12mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRLL2705PBF Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 international rectifier	询价	4SOT-223	Surface Mount	Rail / Tube	Tube	Surface Mount	SOT-223	1W	TO-261-4, TO-261AA	Lead free / RoHS Compliant	80	N-Channel	SMD/SMT	2.1 W	RoHS Compliant	Enhancement	55 V	5.2 A	40@10V mOhm	±16 V	6.2 ns	12 ns	35 ns	-55 to 150 °C	Logic Level Gate	3.8A (Ta)	2V @ 250µA	55V	40 mOhm @ 3.8A, 10V	MOSFET N-Channel, Metal Oxide	870pF @ 25V	48nC @ 10V	16 V	3.8 A	55 V	32 nC	SOT-223	4	SOT223	N-MOSFET	2.1W	1	0.23 g	800	800	22 ns	Dual Drain, Single	-55 °C	+150 °C	N	Power MOSFET	Military	No	SOT-223	1W	55V	unipolar	3.8A	�16 V	0.04 ohm	-55C to 150C	1	55 V	3.8A	32nC	N-Channel	0.04Ohm	35ns	6.2ns	55V	1.3V	±16V	N	0.0002	85412100	+150°C	-55°C	5.1S	1	:3.8A	:55V	:40mohm	:10V	:2V	:2.1W	:-55°C	:150°C	:SOT-223	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +150°C	HEXFET	5.2 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	1.7mm	:2V	:10V	Power MOSFET	0.04 Ω	2.1 W	32 nC V @ 10	870 pF V @ 25	:30A	32nC	16V	40mΩ	12 ns	Compliant	:3.8A	:55V	0.04 Ohms	22 ns	6.7 x 3.7 x 1.7mm	6.7mm	3.7mm	-	-	-	-	-	-	-	-	-	-	-	-	-	:25°C	:25°C	:1	-	:60°C/W	:LL2705	-	5.1 S	-	:7.3mm	:1.7mm	:6.7mm	60K/W	-	-	-	-	-	:2.5V	-	-	-	-	-	-	-	-	-	:12mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRLMS2002TRPBF Trans MOSFET N-CH 20V 6.5A 6-Pin Micro T/R international rectifier	询价	6Micro	Surface Mount	Tape & Reel	Tape & Reel (TR)	Surface Mount	Micro6™(TSOP-6)	2W	TSOP-6	Lead free / RoHS Compliant	3000	N-Channel	SMD/SMT	2 W	RoHS Compliant	Enhancement	20 V	6.5 A	30@4.5V mOhm	±12 V	8.5 ns	11 ns	36 ns	-55 to 150 °C	Logic Level Gate, 2.5V Drive	6.5A (Ta)	1.2V @ 250µA	20V	30 mOhm @ 6.5A, 4.5V	MOSFET N-Channel, Metal Oxide	1310pF @ 15V	22nC @ 5V	12 V	6.5 A	20 V	15 nC	Micro	6	TSOP6	N-MOSFET	2W	3000	0.43 g	3000	3000	16 ns	Dual Dual Drain	- 55 C	+ 150 C	N	Power MOSFET	Military	No	Micro6	2W	20V	unipolar	6.5A	�12 V	0.03 ohm	-55C to 150C	1	20 V	6.5A	15nC	N-Channel	0.03Ohm	36ns	8.5ns	20V	1.2V	±12V	-	0.002	85412100	+150°C	-55°C	13S	-	:6.5A	:20V	:30mohm	:4.5V	:1.2V	-	-	-	-	-	-	-	-	HEXFET	6.5 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	-	-	-	-	-	-	-	-	-	-	-	-	11 ns	Compliant	-	-	0.03 Ohms	16 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	6-LSOP (0.063", 1.60mm Width)	IRLMS2002PBFTR	-	-	-	-	-	-	-	13 S	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	roll	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IRFB41N15DPBF Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	200W	TO-220AB-3	Lead free / RoHS Compliant	3000	N-Channel	Through Hole	200 W	RoHS Compliant	Enhancement	150 V	41 A	45@10V mOhm	±30 V	16 ns	63 ns	25 ns	-55 to 175 °C	Standard	41A (Tc)	5.5V @ 250µA	150V	45 mOhm @ 25A, 10V	MOSFET N-Channel, Metal Oxide	2520pF @ 25V	110nC @ 10V	30 V	41 A	150 V	72 nC	TO-220AB	3	TO220AB	N-MOSFET	200W	1	2.78 g	150	150	14 ns	Single	- 55 C	+ 175 C	N	Power MOSFET	Military	No	TO-220AB	200W	150V	unipolar	41A	�30 V	0.045 ohm	-55C to 175C	1	150 V	41A	72nC	N-Channel	0.045Ohm	25ns	16ns	150V	1.3V	±30V	N	0.002	85412900	+175°C	-55°C	18S	1	:41A	:150V	:45mohm	:10V	:5.5V	:200W	:-55°C	:175°C	:TO-220AB	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	-	-	-	-	-	-	-	:5.5V	:10V	-	-	-	-	-	:164A	72nC	30V	45mΩ	63 ns	-	:41A	:150V	45 mOhms	14 ns	-	-	-	Compliant	175	TO-220	-55	TO-220AB	3100	Through Hole	±30	45@10V	150	41	TO-220-3	*IRFB41N15DPBF	-	-	-	:Through Hole	:0.75°C/W	-	750mK/W	18 S	N	-	-	-	-	150V	-	0.75°C/W	-	-	:5.5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRG4PC50UDPBF Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC international rectifier	询价	3TO-247AC	Through Hole	Rail / Tube	Bulk	Through Hole	TO-247AC	200W	TO-247-3	Lead free / RoHS Compliant	25	:N Channel	Through Hole	200 W	RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-247AC	3	TO247AC	IGBT	200W	1	7.34 g	50	50	-	Single	-55 °C	+150 °C	N-Channel	Ultrafast	Military	No	TO-247AC	200W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	0.006	85412900	-	-	-	-	-	-	-	-	-	:200W	:-55°C	:150°C	:TO-247	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +150°C	-	-	-	-	-	-	-	20.7mm	-	-	-	-	-	-	-	-	-	-	-	:25ns	-	-	-	-	-	15.87 x 5.31 x 20.7mm	15.87mm	5.31mm	Compliant	150	TO-247	-55	TO-247AC	200000	Through Hole	-	-	-	-	-	*IRG4PC50UDPBF	:25°C	:25°C	:1	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	0.64°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600 V	55 A	±20 V	±20	55	600	180nC	55A	1.58mJ	46ns/140ns	2V @ 15V, 27A	600V	50ns	Standard	480V, 27A, 5 Ohm, 15V	220A	2 V	55 A	600 V	55 A	600 V	150C	-55C	�20 V	55 A	:IGBT	:55A	:2V	:600V	:55A	:110ns	:200W	:220A	:600V	4000pF	55A	1.58mJ	8to40kHz(HardSwitching),>200kHz(ResonantMode)	600V	2V	600V	55A	-
3 IRL2910STRLPBF Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R international rectifier	询价	3D2PAK	Surface Mount	Tape & Reel	Tape and Reel	Surface Mount	D2PAK	3.8W	D2PAK	Lead free / RoHS Compliant	800	N-Channel	SMD/SMT	3.8 W	RoHS Compliant	Enhancement	100 V	55 A	26@10V mOhm	±16 V	11 ns	100 ns	49 ns	-55 to 175 °C	Logic Level Gate	55A (Tc)	2V @ 250µA	100V	26 mOhm @ 29A, 10V	MOSFET N-Channel, Metal Oxide	3700pF @ 25V	140nC @ 5V	16 V	55 A	100 V	93.3 nC	D2PAK	3	D2PAK	N-MOSFET	3.8W	800	0.43 g	800	800	55 ns	-	-	-	N	Power MOSFET	Military	No	-	-	100V	unipolar	55A	�16 V	0.026 ohm	-55C to 175C	1	100 V	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	HEXFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Compliant	175	D2PAK	-55	D2PAK	3800	Gull-wing	±16	26@10V	100	55	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	IRL2910STRLPBFCT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 IRFZ34NPBF Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	68W	TO-220-3	Lead free / RoHS Compliant	50	N-Channel	Through Hole	56 W	RoHS Compliant	Enhancement	55 V	29 A	40@10V mOhm	±20 V	7 ns	49 ns	31 ns	-55 to 175 °C	Standard	29A (Tc)	4V @ 250µA	55V	40 mOhm @ 16A, 10V	MOSFET N-Channel, Metal Oxide	700pF @ 25V	34nC @ 10V	20 V	26 A	55 V	22.7 nC	TO-220AB	3	TO220AB	N-MOSFET	56W	1	2.85 g	500	500	40 ns	Single	-55 °C	+175 °C	N	Power MOSFET	Military	No	TO-220AB	68W	55V	unipolar	26A	�20 V	0.04 ohm	-55C to 175C	1	55 V	29A	34nC	N-Channel	0.04Ohm	31ns	7ns	55V	1.6V	±20V	N	0.002	85412900	+175°C	-55°C	6.5S	1	:29A	:55V	:40mohm	:10V	:4V	:68W	:-55°C	:175°C	:TO-220AB	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	29 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	8.77mm	:4V	:10V	Power MOSFET	0.04 Ω	68 W	34 nC V @ 10	700 pF V @ 25	:100A	22.7nC	20V	40mΩ	-	Compliant	-	-	-	-	-	-	-	Compliant	175	TO-220	-55	TO-220AB	68000	Through Hole	±20	40@10V	55	29	-	*IRFZ34NPBF	:25°C	:25°C	:1	:Through Hole	:2.7°C/W	-	2.7K/W	-	-	-	-	-	-	-	:1 g	-	-	-	-	-	-	-	-	:2.54mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:IRFZ34NPBF
10 IRF3205PBF Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	200W	TO-220AB	Lead free / RoHS Compliant	50	N-Channel	Through Hole	150 W	RoHS Compliant	Enhancement	55 V	110 A	8@10V mOhm	±20 V	14 ns	101 ns	50 ns	-55 to 175 °C	Standard	110A (Tc)	4V @ 250µA	55V	8 mOhm @ 62A, 10V	MOSFET N-Channel, Metal Oxide	3247pF @ 25V	146nC @ 10V	20 V	98 A	55 V	97.3 nC	TO-220AB	3	TO220AB	N-MOSFET	150W	1	2.71 g	50	50	65 ns	Single	-55 °C	+175 °C	-	-	-	-	TO-220AB	200W	55V	unipolar	98A	-	-	-	-	-	110A	146nC	N-Channel	8Milliohms	50ns	14ns	55V	1.3V	±20V	N	0.00204	85412100	+175°C	-55°C	44S	1	:110A	:55V	:8mohm	:10V	:4V	:150W	:-55°C	:175°C	:TO-220AB	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	-	-	-	-	-	-	8.77mm	:4V	:10V	Power MOSFET	0.008 Ω	200 W	146 nC V @ 10	3247 pF V @ 25	-	97.3nC	20V	8mΩ	-	-	:110A	:55V	-	-	10.54 x 4.69 x 8.77mm	10.54mm	4.69mm	Compliant	175	TO-220	-55	TO-220AB	200000	Through Hole	±20	8@10V	55	110	TO-220-3	*IRF3205PBF	-	-	-	-	-	-	1K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	New At Mouser	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRF4905PBF Trans MOSFET P-CH 55V 74A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Through Hole	Rail / Tube	Tube	Through Hole	TO-220AB	200W	TO-220AB	Lead free / RoHS Compliant	50	P-Channel	Through Hole	200 W	RoHS Compliant	Enhancement	55 V	74 A	20@10V mOhm	±20 V	18 ns	99 ns	61 ns	-55 to 175 °C	Standard	74A (Tc)	4V @ 250µA	55V	20 mOhm @ 38A, 10V	MOSFET P-Channel, Metal Oxide	3400pF @ 25V	180nC @ 10V	20 V	- 74 A	- 55 V	120 nC	TO-220AB	3	TO220AB	P-MOSFET	200W	1	3.02 g	50	50	96 ns	Single	-55 °C	+175 °C	P	Power MOSFET	Military	No	TO-220AB	200W	-55V	unipolar	-74A	�20 V	0.02 ohm	-55C to 175C	1	55 V	-74A	180nC	P-Channel	0.02Ohm	61ns	18ns	-55V	-1.6V	±20V	P	0.002	85412900	+175°C	-55°C	21S	1	:-74A	:-55V	:20mohm	:-10V	:-4V	:150W	:-55°C	:175°C	:TO-220AB	:3	:-	:No SVHC (20-Jun-2013)	:-55°C to +175°C	HEXFET	74 A	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	8.77mm	:-4V	:-10V	Power MOSFET	0.02 Ω	200 W	180 nC V @ 10	3400 pF V @ 25	:260A	120nC	20V	20mΩ	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-220-3	*IRF4905PBF	:25°C	:25°C	:1	:Through Hole	:0.75°C/W	-	750mK/W	-	P	-	-	-	-	–55V	:1 g	-	-	:a	-	-	-	-	-	:2.54mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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International Rectifier- 单场效应晶体管

单场效应晶体管 - 型号列表共 2,500 个型号

Current - Continuous Drain (Id) @ 25° C

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) @ Vds

Maximum Continuous Drain Current

Gate Charge (Qg) @ Vgs

Continuous Drain Current

Gate Charge Qg

Typical Turn-On Delay Time

Typical Rise Time

Typical Turn-Off Delay Time

Typical Fall Time

Drain current

RDS-on

Current,Drain

Time,Turn-OffDelay

Time,Turn-OnDelay

Drain-Source On-Res

GateCharge,Total

Transconductance,Forward

Gross weight

Continuous Drain Current Id

Drain Current (Max)

Resistance,DraintoSourceOn

Typical Input Capacitance @ Vds

On Resistance Rds(on)

Gate charge

Typical Gate Charge @ Vgs

Current Id Max

Power - Max

Power Dissipation

Rds On

Rise Time

Collective package [pcs]

spg

On-state resistance

Package / Case

Fall Time

PowerDissipation

Power

Maximum Drain Source Resistance

Pulse Current Idm

Maximum Continuous Drain Current

Other Names

Power Dissipation Pd

Maximum Drain Source Resistance

Drain-Source Breakdown Voltage

Drain-source voltage

Maximum Power Dissipation

Maximum Power Dissipation

Maximum Drain Source Voltage

Drain to Source Voltage (Vdss)

Drain-Source On-Volt

Voltage,Breakdown,DraintoSource

Drain Source Voltage Vds

Threshold Voltage Vgs

SMD Marking

Voltage Vgs Max

Package

Vgs(th) (Max) @ Id

Supplier Device Package

Factory Pack Quantity

Forward Transconductance - Min

Package Type

PackageType

Case

Maximum Drain Source Voltage

Junction to Case Thermal Resistance A

Junction-to-case thermal resistance

Gate-Source Breakdown Voltage

Package/Case

Voltage,Forward,Diode

Dimensions

Height

Length

Width

Transistor Case Style

Voltage Vds Typ

Weight (kg)