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International Rectifier
场效应晶体管（FET）

International Rectifier- 场效应晶体管（FET）

国际整流器公司（International Rectifier，简称IR）成立于1947年，总部位于美国加利福尼亚州埃尔塞贡多，是全球功率半导体和管理方案的先驱与领导厂商。IR于2015年被英飞凌科技收购，但其品牌和产品线依然作为核心部分延续至今。公司核心业务涵盖模拟与混合信号集成电路、先进功率器件和集成功率系统，广泛应用于高性能计算、高效电机驱动、汽车电子及航空航天等领域。其标志性产品系列包括HEXFET功率MOSFET、IGBT、高压集成电路（HVIC）、智能功率模块（IPM）以及各类电源管理芯片。IR凭借HEXFET技术彻底革新了功率MOSFET市场，确立了快速开关和低导通电阻的行业基准。这些创新帮助客户实现更高能效、更小尺寸和更低成本的电源转换与电机控制方案。在被收购前，IR长期位居全球分立功率半导体供应商前列，尤其在计算机电源和汽车电机驱动领域占有重要市场份额。凭借深厚的知识产权和数十年技术积淀，IR的解决方案成为下一代计算机、节能电器、照明、车辆和卫星系统的电源管理标杆。如今作为英飞凌的重要组成部分，IR继续通过遍布全球的设计中心、制造基地和分销网络推动电源管理技术进步，其中包括位于中国天津的大型封装和测试工厂，并在深圳、上海、北京等地设有代理和研发机构。

MODELS

场效应晶体管（FET） - 型号列表共 2,391 个型号

制造商零件编号	价格/库存	Package	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Maximum Gate Source Voltage	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Operating Temperature	Mounting	Standard Package	FET Feature	Packaging	Mounting Type	Current - Continuous Drain (Id) @ 25° C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Power - Max	Input Capacitance (Ciss) @ Vds	Gate Charge (Qg) @ Vgs	rohs	Power Dissipation	Typical Fall Time	Transistor Polarity	Continuous Drain Current	Gate-Source Voltage (Max)	Operating Temp Range	Package Type	Pin Count	Polarity	Type	Number of Elements	Operating Temperature Classification	Drain-Source On-Volt	Rad Hardened	Case	Transistor type	Power	Drain-source voltage	Polarisation	Drain current	Multiplicity	Gross weight	Collective package [pcs]	spg	Drain-Source On-Res	Current,Drain	GateCharge,Total	PackageType	Polarization	PowerDissipation	Resistance,DraintoSourceOn	Time,Turn-OffDelay	Time,Turn-OnDelay	Voltage,Breakdown,DraintoSource	Voltage,Forward,Diode	Voltage,GatetoSource	Frequency (Max)	Output Power (Max)	Noise Figure	Drain Efficiency	Power Gain	Transconductance,Forward	Package / Case	Factory Pack Quantity	Gate-Source Breakdown Voltage	Mounting Style	Drain-Source Breakdown Voltage	RoHS	Gate Charge Qg	Drain Current (Max)	Temperature,Operating,Maximum	Temperature,Operating,Minimum	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Weight (kg)	Tariff No.	DELETED	Number of Elements per Chip	Configuration	Minimum Operating Temperature	Maximum Operating Temperature	Transistor kind	No. of Pins	Package/Case	Rds On	Rise Time	Fall Time	Power Dissipation Pd	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	MSL	SVHC	Current Id Max	Operating Temperature Range	Pulse Current Idm	Voltage Vds Typ	Voltage Vgs Max	Voltage Vgs Rds on Measurement	Gate charge	gate-source voltage	On-state resistance	Category	Height	Maximum Drain Source Resistance	Maximum Power Dissipation	Typical Gate Charge @ Vgs	Typical Input Capacitance @ Vds	Maximum Gate Source Voltage	EU RoHS	Maximum Operating Temperature	Standard Package Name	Minimum Operating Temperature	Maximum Drain Source Resistance	Maximum Drain Source Voltage	Supplier Package	Maximum Power Dissipation	Maximum Continuous Drain Current	Lead Shape	Other Names	Dimensions	Length	Width	SMD Marking	Forward Transconductance - Min	ChannelType	Current Temperature	Full Power Rating Temperature	No. of Transistors	Junction-to-ambient thermal resistance	Junction to Case Thermal Resistance A	External Depth	External Length / Height	External Width	Termination Type	Voltage,DraintoSource	Package type	Package Height	Package Width	Package Length	PCB	Junction-to-case thermal resistance	Row Pitch	Voltage Vgs th Max	Resistance,Thermal,JunctiontoCase	Pin Configuration	Pin Format	Junction Temperature Tj Min	Temperature,Operating	ThermalResistance,JunctiontoAmbient	Alternate Case Style	Tape Width	Continuous Drain Current Id, N Channel	Drain Source Voltage Vds, N Channel	Junction Temperature Tj Max	Module Configuration	On Resistance Rds(on), N Channel	Fall Time tf	On State resistance @ Vgs = 10V	Life	Tab	Lead Spacing
IRFB4321GPBF Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Enhancement	150 V	83 A	15@10V mOhm	±30 V	18 ns	60 ns	25 ns	-55 to 175 °C	Through Hole	Rail / Tube	Standard	Tube	Through Hole	83A (Tc)	5V @ 250µA	150V	TO-220AB	15 mOhm @ 33A, 10V	MOSFET N-Channel, Metal Oxide	330W	4460pF @ 25V	110nC @ 10V	Lead free / RoHS Compliant	330 W	35 ns	N-Channel	83 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-220-3	50	30 V	Through Hole	150 V	RoHS Compliant	71 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IRF640NSTRLPBF Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R international rectifier	询价	3D2PAK	Enhancement	200 V	18 A	150@10V mOhm	±20 V	10 ns	19 ns	23 ns	-55 to 175 °C	Surface Mount	Tape & Reel	Standard	Tape & Reel (TR)	Surface Mount	18A (Tc)	4V @ 250µA	200V	D2PAK	150 mOhm @ 11A, 10V	MOSFET N-Channel, Metal Oxide	150W	1160pF @ 25V	67nC @ 10V	Lead free / RoHS Compliant	150 W	5.5 ns	N-Channel	18 A	�20 V	-55C to 175C	D2PAK	2 +Tab	N	Power MOSFET	1	Military	200 V	No	D2PAK	N-MOSFET	150W	200V	unipolar	18A	800	0.43 g	800	800	0.15 ohm	18A	67nC	D2Pak	N-Channel	150W	0.15Ohm	23ns	10ns	200V	1.3V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	6.8S	D2PAK	800	+/- 20 V	SMD/SMT	200 V	RoHS Compliant	44.7 nC	18 A	+175°C	-55°C	-	-	-	-	-	-	-	-	Compliant	-	Single	- 55 C	+ 175 C	-	-	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	150 mOhms	19 ns	5.5 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRF640NSTRLPBFCT	-	-	-	-	6.8 S	N	-	-	-	-	-	-	-	-	-	200V	roll	-	-	-	-	-	-	-	1°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRF7313PBF Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC international rectifier	询价	8SOIC	Enhancement	30 V	6.5 A	29@10V mOhm	±20 V	8.1 ns	8.9 ns	26 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Standard	Tube	Surface Mount	6.5A	1V @ 250µA	30V	8-SO	29 mOhm @ 5.8A, 10V	2 N-Channel (Dual)	2W	650pF @ 25V	33nC @ 10V	Lead free / RoHS Compliant	2 W	17 ns	N-Channel	6.5 A	�20 V	-55C to 150C	SOIC	8	N	Power MOSFET	2	Military	30 V	No	SO8	N-MOSFET x2	2W	30V	unipolar	6.5A	1	0.2 g	665	665	0.029 ohm	6.5A	22nC	SO-8	N-Channel	2W	0.029Ohms	26ns	8.1ns	30V	1.2V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	14S	SOIC-8	95	20 V	SMD/SMT	30 V	RoHS Compliant	22 nC	6.5 A	-	-	N	:6.5A	:30V	:29mohm	:10V	:1V	0.0005	85412900	Compliant	2	Dual, Dual Drain	-55 °C	+150 °C	HEXFET	:8	8-SOIC (0.154", 3.90mm Width)	46 mOhms	8.9 ns	17 ns	:2W	:-55°C	:150°C	:SOIC	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:6.5A	:-55°C to +150°C	:30A	:30V	:1V	:10V	22nC	20V	29mΩ	Power MOSFET	1.5mm	0.029 Ω	2 W	22 nC V @ 10	650 pF V @ 25	-	-	-	-	-	-	-	-	-	-	-	-	5 x 4 x 1.5mm	5mm	4mm	:7313	-	-	:25°C	:25°C	:2	62.5K/W	-	:5.2mm	:1.75mm	:4.05mm	-	-	-	-	-	-	-	-	:6.3mm	-	-	-	-	:-55°C	-55to150°C	62.5°C/W	-	-	:6.5A	:30V	:150°C	:Dual	:0.032ohm	-	-	-	-	-
6 IRF7413PBF Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R international rectifier	询价	8SOIC	Enhancement	30 V	13 A	11@10V mOhm	±20 V	8.6 ns	50 ns	52 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tape and Reel	Surface Mount	13A (Ta)	3V @ 250µA	30V	8-SO	11 mOhm @ 7.3A, 10V	MOSFET N-Channel, Metal Oxide	2.5W	1800pF @ 25V	79nC @ 10V	Lead free / RoHS Compliant	2.5 W	46 ns	N-Channel	13 A	�20 V	-55C to 150C	SOIC	8	N	Power MOSFET	1	Military	30 V	No	SO8	N-MOSFET	2.5W	30V	unipolar	13A	1	0.18 g	285	285	0.011 ohm	13A	52nC	SO-8	N-Channel	2.5W	0.011Ohm	52ns	8.6ns	30V	1V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	10S	8-SOIC (0.154", 3.90mm Width)	95	20 V	SMD/SMT	30 V	RoHS Compliant	44 nC	13 A	+150°C	-55°C	N	:12A	:30V	:10mohm	:10V	:3V	0.0005	85412900	Compliant	1	Quad Drain, Single, Triple Source	-55 °C	+150 °C	HEXFET	:8	-	18 mOhms	50 ns	46 ns	:2.5W	:-55°C	:150°C	:SOIC	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:13A	:-55°C to +150°C	:58A	:30V	:3V	:10V	44nC	20V	11mΩ	Power MOSFET	1.5mm	0.011 Ω	2.5 W	52 nC V @ 10	1800 pF V @ 25	±20	Compliant	150	SOIC	-55	11@10V	30	SOIC	2500	13	Gull-wing	-	5 x 4 x 1.5mm	5mm	4mm	:F7413	-	-	:25°C	:25°C	:1	50K/W	-	:5.2mm	:1.75mm	:4.05mm	-	-	-	-	-	-	-	-	:6.3mm	-	-	:b	:1 S	:-55°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IRF7493PBF Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC international rectifier	询价	8SOIC	Enhancement	80 V	9.3 A	15@10V mOhm	±20 V	8.3 ns	7.5 ns	30 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tube	Surface Mount	9.3A (Tc)	4V @ 250µA	80V	8-SO	15 mOhm @ 5.6A, 10V	MOSFET N-Channel, Metal Oxide	2.5W	1510pF @ 25V	53nC @ 10V	Lead free / RoHS Compliant	2.5 W	12 ns	N-Channel	9.2 A	�20 V	-55C to 150C	SOIC	8	N	Power MOSFET	1	Military	80 V	No	SO8	N-MOSFET	2.5W	80V	unipolar	9.2A	1	0.22 g	100	100	0.015 ohm	9.3A	35nC	SO-8	N-Channel	2.5W	11.5Milliohms	30ns	8.3ns	80V	1.3V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	13S	8-SOIC (0.154", 3.90mm Width)	95	20 V	SMD/SMT	80 V	RoHS Compliant	31 nC	9.3 A	+150°C	-55°C	N	:9.3A	:80V	:15mohm	:10V	:4V	0.0005	85412900	Compliant	1	Quad Drain, Single, Triple Source	-55 °C	+150 °C	HEXFET	:8	-	15 mOhms	7.5 ns	12 ns	:2.5W	:-55°C	:150°C	:SOIC	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:9.3A	:-55°C to +150°C	:74A	:80V	:20V	:10V	31nC	20V	15mΩ	Power MOSFET	1.5mm	0.015 Ω	2.5 W	35 nC V @ 10	1510 pF V @ 25	±20	Compliant	150	SOIC	-55	15@10V	80	SOIC	2500	9.3	Gull-wing	-	5 x 4 x 1.5mm	5mm	4mm	-	-	-	-	-	:1	50K/W	-	-	-	-	:SMD	-	-	1.5(Max)	4(Max)	5(Max)	8	-	-	-	-	:(1+2+3)S,4G, (8+7+6+5)D	-	-	-	-	-	-	-	-	-	-	-	:12ns	-	-	-	-
7 IRF7809AVPBF Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC international rectifier	询价	8SOIC	Enhancement	30 V	13.3 A	9@4.5V mOhm	±12 V	14 ns	36 ns	96 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tube	Surface Mount	13.3A (Ta)	1V @ 250µA	30V	8-SO	9 mOhm @ 15A, 4.5V	MOSFET N-Channel, Metal Oxide	2.5W	3780pF @ 16V	62nC @ 5V	Lead free / RoHS Compliant	2.5 W	10 ns	N-Channel	13.3 A	�12 V	-55C to 150C	SOIC	8	N	Power MOSFET	1	Military	30 V	No	SO8	N-MOSFET	2.5W	30V	unipolar	13.3A	1	0.43 g	95	95	0.009 ohm	13.3A	41nC	SO-8	N-Channel	2.5W	7Milliohms	96ns	14ns	30V	1.3V	±12V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	-	8-SOIC (0.154", 3.90mm Width)	95	12 V	SMD/SMT	30 V	RoHS Compliant	41 nC	13.3 A	+150°C	-55°C	N	:14.5A	:30V	:8.5mohm	:4.5V	:1V	0.0005	85412900	-	1	Quad Drain, Single, Triple Source	-55 °C	+150 °C	-	:8	-	9 mOhms	36 ns	10 ns	:2.5W	:-55°C	:150°C	:SOIC	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:13.3A	:-55°C to +150°C	:100A	:30V	:1V	:4.5V	-	-	-	Power MOSFET	1.5mm	0.009 Ω	2.5 W	41 nC V @ 5	3780 pF V @ 16	±12	Compliant	150	SOIC	-55	9@4.5V	30	SOIC	2500	13.3	Gull-wing	-	5 x 4 x 1.5mm	5mm	4mm	:F7809	-	-	:25°C	:25°C	:1	-	-	:5.2mm	:1.75mm	:4.05mm	-	-	-	1.5(Max)	4(Max)	5(Max)	8	-	:6.3mm	-	-	:b	:1 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IRF7821PBF Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC international rectifier	询价	8SOIC	Enhancement	30 V	13.6 A	9.1@10V mOhm	±20 V	6.3 ns	2.7 ns	9.7 ns	-55 to 155 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tube	Surface Mount	13.6A (Ta)	1V @ 250µA	30V	8-SO	9.1 mOhm @ 13A, 10V	MOSFET N-Channel, Metal Oxide	2.5W	1010pF @ 15V	14nC @ 4.5V	Lead free / RoHS Compliant	2.5 W	7.3 ns	N-Channel	13.6 A	�20 V	-55C to 155C	SOIC	8	N	Power MOSFET	1	Military	30 V	No	SO8	N-MOSFET	2.5W	30V	unipolar	13.6A	1	0.16 g	665	665	0.0091 ohm	13.6A	9.3nC	SO-8	N-Channel	2.5W	7Milliohms	9.7ns	6.3ns	30V	1V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	22S	8-SOIC (0.154", 3.90mm Width)	95	20 V	SMD/SMT	30 V	RoHS Compliant	9.3 nC	13.6 A	+150°C	-55°C	N	:13.6A	:30V	:9.1mohm	:10V	:1V	0.0005	85412900	Compliant	1	Quad Drain, Single, Triple Source	-55 °C	+155 °C	HEXFET	:8	-	12.5 mOhms	2.7 ns	7.3 ns	:2.5W	:-55°C	:155°C	:SOIC	:MSL 1 - Unlimited	:No SVHC (20-Jun-2013)	:13.6A	:-55°C to +155°C	:100A	:30V	:1V	:10V	9.3nC	20V	9.1mΩ	Power MOSFET	1.5mm	0.009 Ω	2.5 W	9.3 nC V @ 4.5	1010 pF V @ 15	-	-	-	-	-	-	-	-	-	-	-	-	5 x 4 x 1.5mm	5mm	4mm	:IRF7821PBF	22 S	-	:25°C	:25°C	-	50K/W	-	:5.2mm	:1.75mm	:4.05mm	:SMD	-	-	-	-	-	-	-	:6.3mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IRF7821TRPBF Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R international rectifier	询价	8SOIC	Enhancement	30 V	13.6 A	9.1@10V mOhm	±20 V	6.3 ns	2.7 ns	9.7 ns	-55 to 155 °C	Surface Mount	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	13.6A (Ta)	1V @ 250µA	30V	8-SO	9.1 mOhm @ 13A, 10V	MOSFET N-Channel, Metal Oxide	2.5W	1010pF @ 15V	14nC @ 4.5V	Lead free / RoHS Compliant	2.5 W	7.3 ns	:N Channel	13.6 A	�20 V	-55C to 155C	SOIC	8	N	Power MOSFET	1	Military	30 V	No	SO8	N-MOSFET	2.5W	30V	unipolar	13.6A	4000	0.43 g	4000	4000	0.0091 ohm	13.6A	9.3nC	SO-8	N-Channel	2.5W	7Milliohms	9.7ns	6.3ns	30V	1V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	22S	-	-	-	-	-	-	-	13.6 A	+150°C	-55°C	N	:13.6A	:30V	:7mohm	:10V	:1V	0.002	85412100	Compliant	1	-	-	-	-	:8	8-SOIC (0.154", 3.90mm Width)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±20	Compliant	155	SOIC	-55	9.1@10V	30	SOIC	2500	13.6	Gull-wing	IRF7821PBFTR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	roll	1.5(Max)	4(Max)	5(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IRFP90N20DPBF Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC international rectifier	询价	3TO-247AC	Enhancement	200 V	94 A	23@10V mOhm	±30 V	23 ns	160 ns	43 ns	-55 to 175 °C	Through Hole	Rail / Tube	Standard	Bulk	Through Hole	94A (Tc)	5V @ 250µA	200V	TO-247AC	23 mOhm @ 56A, 10V	MOSFET N-Channel, Metal Oxide	580W	6040pF @ 25V	270nC @ 10V	Lead free / RoHS Compliant	580 W	79 ns	N-Channel	94 A	�30 V	-55C to 175C	TO-247AC	3	N	Power MOSFET	1	Military	200 V	No	TO247AC	N-MOSFET	580W	200V	unipolar	94A	1	7.21 g	50	50	0.023 ohm	94A	180nC	TO-247AC	N-Channel	580W	0.023Ohm	43ns	23ns	200V	1.5V	±30V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	39S	TO-247AC	25	+/- 30 V	Through Hole	200 V	RoHS Compliant	180 nC	94 A	+175°C	-55°C	N	:94A	:200V	:23mohm	:10V	:5V	0.006	85412900	Compliant	1	Single	-55 °C	+175 °C	HEXFET	:3	TO-247-3	23 mOhms	160 ns	79 ns	:580W	:-55°C	:175°C	:TO-247AC	:-	:No SVHC (20-Jun-2013)	:94A	:-55°C to +175°C	:380A	:200V	:5V	:10V	180nC	30V	23mΩ	Power MOSFET	20.3mm	0.023 Ω	580 W	180 nC V @ 10	6040 pF V @ 25	±30	Compliant	175	TO-247	-55	23@10V	200	TO-247AC	580000	94	Through Hole	*IRFP90N20DPBF	15.9 x 5.3 x 20.3mm	15.9mm	5.3mm	-	39 S	N	-	-	-	-	:0.26°C/W	-	-	-	-	200V	-	-	-	-	-	260mK/W	-	-	0.26°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	:23mohm	-	-	-
7 IRFR220NPBF Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK international rectifier	询价	3DPAK	Enhancement	200 V	5 A	600@10V mOhm	±20 V	6.4 ns	11 ns	20 ns	-55 to 175 °C	Surface Mount	Rail / Tube	Standard	Tube	Surface Mount	5A (Tc)	4V @ 250µA	200V	D-Pak	600 mOhm @ 2.9A, 10V	MOSFET N-Channel, Metal Oxide	43W	300pF @ 25V	23nC @ 10V	Lead free / RoHS Compliant	43 W	12 ns	N-Channel	5 A	�20 V	-55C to 175C	DPAK	3	N	Power MOSFET	1	Military	200 V	No	DPAK	N-MOSFET	43W	200V	unipolar	5A	1	0.63 g	525	525	0.6 ohm	5A	15nC	D-Pak(TO-252AA)	N-Channel	43W	600Milliohms	20ns	6.4ns	200V	1.3V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.6S	DPAK	75	20 V	SMD/SMT	200 V	RoHS Compliant	15 nC	5 A	+175°C	-55°C	N	:5A	:200V	:600mohm	:10V	:4V	0.0004	85412900	-	1	Single	-55 °C	+175 °C	HEXFET	:3	TO-252-3, DPak (2 Leads + Tab), SC-63	600 mOhms	11 ns	12 ns	:43W	:-55°C	:175°C	:TO-252	:-	:No SVHC (20-Jun-2013)	:5A	:-55°C to +175°C	:20A	:200V	:4V	:10V	15nC	20V	600mΩ	Power MOSFET	2.39mm	0.6 Ω	43 W	15 nC V @ 10	300 pF V @ 25	±20	Compliant	175	DPAK	-55	600@10V	200	DPAK	43000	5	Gull-wing	-	6.73 x 6.22 x 2.39mm	6.73mm	6.22mm	:IRFR220N	-	-	-	-	-	-	:3.5°C/W	-	-	-	:SMD	-	-	-	-	-	-	3.5K/W	-	-	-	-	-	-	-	-	:D-PAK	-	-	-	-	-	-	-	-	-	-	-
7 IRFR9024NPBF Trans MOSFET P-CH 55V 11A 3-Pin(2+Tab) DPAK international rectifier	询价	3DPAK	Enhancement	55 V	11 A	175@10V mOhm	±20 V	13 ns	55 ns	23 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Standard	Tube	Surface Mount	11A (Tc)	4V @ 250µA	55V	D-Pak	175 mOhm @ 6.6A, 10V	MOSFET P-Channel, Metal Oxide	38W	350pF @ 25V	19nC @ 10V	Lead free / RoHS Compliant	38 W	37 ns	P-Channel	11 A	�20 V	-55C to 150C	DPAK	3	P	Power MOSFET	1	Military	55 V	No	DPAK	P-MOSFET	38W	-55V	unipolar	-11A	1	0.72 g	450	450	0.175 ohm	-11A	19nC	D-Pak(TO-252AA)	P-Channel	38W	0.175Ohm	23ns	13ns	-55V	-1.6V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.5S	DPAK	75	20 V	SMD/SMT	- 55 V	RoHS Compliant	12.7 nC	11 A	+150°C	-55°C	P	:11A	:55V	:175mohm	:-10V	:-4V	0.0004	85412900	Compliant	1	Single	-55 °C	+150 °C	HEXFET	:3	TO-252-3, DPak (2 Leads + Tab), SC-63	-	-	-	:38W	:-55°C	:150°C	:TO-252	:-	:No SVHC (20-Jun-2013)	:-11A	:-55°C to +150°C	:44A	:55V	:-4V	:-10V	12.7nC	20V	175mΩ	Power MOSFET	2.39mm	0.175 Ω	38 W	19 nC V @ 10	350 pF V @ 25	±20	Compliant	150	DPAK	-55	175@10V	55	DPAK	38000	11	Gull-wing	-	6.73 x 6.22 x 2.39mm	6.73mm	6.22mm	:IRFR9024N	-	P	-	-	-	-	:3.3°C/W	-	-	-	:SMD	–55V	-	2.39(Max)	6.22(Max)	6.73(Max)	2	3.3K/W	-	:-4V	-	-	-	-	-	-	:D-PAK	-	-	-	-	-	-	-	-	New At Mouser	Tab	-
6 IRFZ44EPBF Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Enhancement	60 V	48 A	23@10V mOhm	±20 V	12 ns	60 ns	70 ns	-55 to 175 °C	Through Hole	Rail / Tube	Standard	Tube	Through Hole	48A (Tc)	4V @ 250µA	60V	TO-220AB	23 mOhm @ 29A, 10V	MOSFET N-Channel, Metal Oxide	110W	1360pF @ 25V	60nC @ 10V	Lead free / RoHS Compliant	110 W	-	N-Channel	48 A	�20 V	-55C to 175C	TO-220AB	3	N	Power MOSFET	1	Military	60 V	No	TO220AB	N-MOSFET	110W	60V	unipolar	48A	1	2.85 g	50	50	0.023 ohm	48A	60nC	TO-220AB	N-Channel	110W	0.023Ohm	70ns	12ns	60V	1.3V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	15S	TO-220-3	50	20 V	Through Hole	60 V	RoHS Compliant	40 nC	48 A	+175°C	-55°C	N	:48A	:60V	:23mohm	:10V	:4V	0.002	85412900	Compliant	1	Single	-55 °C	+175 °C	HEXFET	:3	-	-	-	-	:110W	:-55°C	:175°C	:TO-220AB	:-	:No SVHC (20-Jun-2013)	:48A	:-55°C to +175°C	:192A	:60V	:4V	:10V	40nC	20V	23mΩ	Power MOSFET	8.77mm	0.023 Ω	110 W	60 nC V @ 10	1360 pF V @ 25	±20	Compliant	175	TO-220	-55	23@10V	60	TO-220AB	110000	48	Through Hole	*IRFZ44EPBF	-	-	-	-	-	-	:25°C	:25°C	:1	-	:1.4°C/W	-	-	-	:Through Hole	-	-	-	-	-	-	1.4K/W	-	-	-	-	:1 g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:2.54mm
7 IRLL014NPBF Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 international rectifier	询价	4SOT-223	Enhancement	55 V	2.8 A	140@10V mOhm	±16 V	5.1 ns	4.9 ns	14 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tube	Surface Mount	2A (Ta)	2V @ 250µA	55V	SOT-223	140 mOhm @ 2A, 10V	MOSFET N-Channel, Metal Oxide	1W	230pF @ 25V	14nC @ 10V	Lead free / RoHS Compliant	2.1 W	2.9 ns	N-Channel	2 A	�16 V	-55C to 150C	SOT-223	4	N	Power MOSFET	1	Military	55 V	No	SOT223	N-MOSFET	2.1W	55V	unipolar	2A	1	0.24 g	960	960	0.14 ohm	2.8A	9.5nC	SOT-223	N-Channel	2.1W	0.14Ohm	14ns	5.1ns	55V	1V	±16V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.3S	TO-261-4, TO-261AA	80	16 V	SMD/SMT	55 V	RoHS Compliant	9.5 nC	2.8 A	+150°C	-55°C	N	:2A	:55V	:140mohm	:10V	:2V	0.0002	85412900	Compliant	1	Dual Drain, Single	-55 °C	+150 °C	HEXFET	:3	-	0.14 Ohms	4.9 ns	2.9 ns	:2.1W	:-55°C	:150°C	:SOT-223	:-	:No SVHC (20-Jun-2013)	:2A	:-55°C to +150°C	:16A	:55V	:2V	:10V	9.5nC	16V	140mΩ	Power MOSFET	1.7mm	0.14 Ω	2.1 W	9.5 nC V @ 10	230 pF V @ 25	-	-	-	-	-	-	-	-	-	-	-	-	6.7 x 3.7 x 1.7mm	6.7mm	3.7mm	:LL014N	2.3 S	-	:25°C	:25°C	:1	60K/W	:60°C/W	:7.3mm	:1.7mm	:6.7mm	-	-	-	-	-	-	-	-	-	:2V	-	-	-	-	-	-	-	:12mm	-	-	-	-	-	-	-	-	-	-
7 IRLL2705PBF Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 international rectifier	询价	4SOT-223	Enhancement	55 V	5.2 A	40@10V mOhm	±16 V	6.2 ns	12 ns	35 ns	-55 to 150 °C	Surface Mount	Rail / Tube	Logic Level Gate	Tube	Surface Mount	3.8A (Ta)	2V @ 250µA	55V	SOT-223	40 mOhm @ 3.8A, 10V	MOSFET N-Channel, Metal Oxide	1W	870pF @ 25V	48nC @ 10V	Lead free / RoHS Compliant	2.1 W	22 ns	N-Channel	3.8 A	�16 V	-55C to 150C	SOT-223	4	N	Power MOSFET	1	Military	55 V	No	SOT223	N-MOSFET	2.1W	55V	unipolar	3.8A	1	0.23 g	800	800	0.04 ohm	3.8A	32nC	SOT-223	N-Channel	1W	0.04Ohm	35ns	6.2ns	55V	1.3V	±16V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	5.1S	TO-261-4, TO-261AA	80	16 V	SMD/SMT	55 V	RoHS Compliant	32 nC	5.2 A	+150°C	-55°C	N	:3.8A	:55V	:40mohm	:10V	:2V	0.0002	85412100	Compliant	1	Dual Drain, Single	-55 °C	+150 °C	HEXFET	:3	-	0.04 Ohms	12 ns	22 ns	:2.1W	:-55°C	:150°C	:SOT-223	:-	:No SVHC (20-Jun-2013)	:3.8A	:-55°C to +150°C	:30A	:55V	:2V	:10V	32nC	16V	40mΩ	Power MOSFET	1.7mm	0.04 Ω	2.1 W	32 nC V @ 10	870 pF V @ 25	-	-	-	-	-	-	-	-	-	-	-	-	6.7 x 3.7 x 1.7mm	6.7mm	3.7mm	:LL2705	5.1 S	-	:25°C	:25°C	:1	60K/W	:60°C/W	:7.3mm	:1.7mm	:6.7mm	-	-	-	-	-	-	-	-	-	:2.5V	-	-	-	-	-	-	-	:12mm	-	-	-	-	-	-	-	-	-	-
5 IRLML2502TRPBF Trans MOSFET N-CH 20V 4.2A 3-Pin Micro T/R international rectifier	询价	3Micro	Enhancement	20 V	4.2 A	45@4.5V mOhm	±12 V	7.5 ns	10 ns	54 ns	-55 to 150 °C	Surface Mount	Tape & Reel	Logic Level Gate	Tape & Reel (TR)	Surface Mount	4.2A (Ta)	1.2V @ 250µA	20V	Micro3™/SOT-23	45 mOhm @ 4.2A, 4.5V	MOSFET N-Channel, Metal Oxide	1.25W	740pF @ 15V	12nC @ 5V	Lead free / RoHS Compliant	1.25 W	26 ns	:N Channel	4.2 A	�12 V	-55C to 150C	Micro	3	N	Power MOSFET	1	Military	20 V	No	SOT23	N-MOSFET	1.25W	20V	unipolar	4.2A	1	0.07 g	3000	3000	0.045 ohm	4.2A	8nC	Micro3	N-Channel	1.25W	0.045Ohm	54ns	7.5ns	20V	1.2V	±12V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	5.8S	-	-	-	-	-	-	-	4.2 A	+150°C	-55°C	-	:4.2A	:20V	:0.035ohm	:4.5V	:1.2V	0	85412900	Compliant	-	-	-	-	HEXFET	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8nC	12V	45mΩ	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRLML2502PBFTR	-	-	-	-	-	N	-	-	-	100K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IRLMS2002TRPBF Trans MOSFET N-CH 20V 6.5A 6-Pin Micro T/R international rectifier	询价	6Micro	Enhancement	20 V	6.5 A	30@4.5V mOhm	±12 V	8.5 ns	11 ns	36 ns	-55 to 150 °C	Surface Mount	Tape & Reel	Logic Level Gate, 2.5V Drive	Tape & Reel (TR)	Surface Mount	6.5A (Ta)	1.2V @ 250µA	20V	Micro6™(TSOP-6)	30 mOhm @ 6.5A, 4.5V	MOSFET N-Channel, Metal Oxide	2W	1310pF @ 15V	22nC @ 5V	Lead free / RoHS Compliant	2 W	16 ns	N-Channel	6.5 A	�12 V	-55C to 150C	Micro	6	N	Power MOSFET	1	Military	20 V	No	TSOP6	N-MOSFET	2W	20V	unipolar	6.5A	3000	0.43 g	3000	3000	0.03 ohm	6.5A	15nC	Micro6	N-Channel	2W	0.03Ohm	36ns	8.5ns	20V	1.2V	±12V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	13S	TSOP-6	3000	12 V	SMD/SMT	20 V	RoHS Compliant	15 nC	6.5 A	+150°C	-55°C	-	:6.5A	:20V	:30mohm	:4.5V	:1.2V	0.002	85412100	Compliant	-	Dual Dual Drain	- 55 C	+ 150 C	HEXFET	-	6-LSOP (0.063", 1.60mm Width)	0.03 Ohms	11 ns	16 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRLMS2002PBFTR	-	-	-	-	13 S	N	-	-	-	-	-	-	-	-	-	-	roll	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 IRF7306TRPBF Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R international rectifier	询价	8SOIC	Enhancement	30 V	3.6 A	100@10V mOhm	±20 V	11 ns	17 ns	25 ns	-55 to 150 °C	Surface Mount	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	3.6A	1V @ 250µA	30V	8-SO	100 mOhm @ 1.8A, 10V	2 P-Channel (Dual)	2W	440pF @ 25V	25nC @ 10V	Lead free / RoHS Compliant	2 W	18 ns	-	3.6 A	�20 V	-55C to 150C	SOIC	8	P	Power MOSFET	2	Military	30 V	No	SO8	P-MOSFET	2W	-30V	unipolar	-3.6A	4000	0.43 g	4000	4000	0.1 ohm	-3.6A	25nC	SO-8	DualP-Channel	2W	0.1Ohm	25ns	11ns	-30V	-1V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	2.5S	-	-	-	-	-	-	-	3.6 A	+150°C	-55°C	P	-	-	-	-	-	-	-	Compliant	2	-	-	-	-	-	8-SOIC (0.154", 3.90mm Width)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±20	Compliant	150	SOIC	-55	100@10V	30	SOIC	2000	3.6	Gull-wing	IRF7306PBFTR	-	-	-	-	-	P	-	-	-	-	-	-	-	-	-	-30V	roll	1.5(Max)	4(Max)	5(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IRF7319TRPBF Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R international rectifier	询价	8SOIC	Enhancement	30 V	6.5@N Channel\|4.9@P Channel A	29@10V@N Channel\|58@10V@P Channel mOhm	±20 V	8.1@N Channel\|13@P Channel ns	8.9@N Channel\|13@P Channel ns	26@N Channel\|34@P Channel ns	-55 to 150 °C	Surface Mount	Tape & Reel	Logic Level Gate	Tape & Reel (TR)	Surface Mount	6.5A, 4.9A	1V @ 250µA	30V	8-SO	29 mOhm @ 5.8A, 10V	N and P-Channel	2W	650pF @ 25V	33nC @ 10V	Lead free / RoHS Compliant	2 W	17@N Channel\|32@P Channel ns	:N and P Channel	-	�20 V	-55C to 150C	SOIC	8	N/P	Power MOSFET	2	Military	30 V	No	SO8	N/P-MOSFET	2W	30V	unipolar	6.5A	4000	0.43 g	4000	4000	-	6.5/-4.9A	22/23nC	SO-8	N-ChannelandP-Channel	2W	0.029/0.058Ohms	26/34ns	8.1/13ns	30/-30V	0.78/-0.78V	±20V	Not Required MHz	Not Required W	Not Required dB	Not Required %	Not Required dB	14/7.7S	-	-	-	-	-	-	-	-	-	-	N\|P	:6.5A	:30V	:23mohm	:10V	:1V	0.002	85412100	Compliant	-	-	-	-	-	-	8-SOIC (0.154", 3.90mm Width)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRF7319PBFDKR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	roll	-	-	-	-	-	-	-	-	-	-	-	-55to150°C	62.5°C/W	-	-	-	-	-	-	-	-	-	-	-	-
4 IRFB41N15DPBF Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB international rectifier	询价	3TO-220AB	Enhancement	150 V	41 A	45@10V mOhm	±30 V	16 ns	63 ns	25 ns	-55 to 175 °C	Through Hole	Rail / Tube	Standard	Tube	Through Hole	41A (Tc)	5.5V @ 250µA	150V	TO-220AB	45 mOhm @ 25A, 10V	MOSFET N-Channel, Metal Oxide	200W	2520pF @ 25V	110nC @ 10V	Lead free / RoHS Compliant	200 W	14 ns	N-Channel	41 A	�30 V	-55C to 175C	TO-220AB	3	N	Power MOSFET	1	Military	150 V	No	TO220AB	N-MOSFET	200W	150V	unipolar	41A	1	2.78 g	150	150	0.045 ohm	41A	72nC	TO-220AB	N-Channel	200W	0.045Ohm	25ns	16ns	150V	1.3V	±30V	-	-	-	-	-	18S	TO-220AB-3	3000	30 V	Through Hole	150 V	RoHS Compliant	72 nC	-	+175°C	-55°C	N	:41A	:150V	:45mohm	:10V	:5.5V	0.002	85412900	-	1	Single	- 55 C	+ 175 C	HEXFET	:3	TO-220-3	45 mOhms	63 ns	14 ns	:200W	:-55°C	:175°C	:TO-220AB	:-	:No SVHC (20-Jun-2013)	:41A	:-55°C to +175°C	:164A	:150V	:5.5V	:10V	72nC	30V	45mΩ	-	-	-	-	-	-	±30	Compliant	175	TO-220	-55	45@10V	150	TO-220AB	3100	41	Through Hole	*IRFB41N15DPBF	-	-	-	-	18 S	N	-	-	-	-	:0.75°C/W	-	-	-	:Through Hole	150V	-	-	-	-	-	750mK/W	-	:5.5V	0.75°C/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IRL2910STRLPBF Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R international rectifier	询价	3D2PAK	Enhancement	100 V	55 A	26@10V mOhm	±16 V	11 ns	100 ns	49 ns	-55 to 175 °C	Surface Mount	Tape & Reel	Logic Level Gate	Tape and Reel	Surface Mount	55A (Tc)	2V @ 250µA	100V	D2PAK	26 mOhm @ 29A, 10V	MOSFET N-Channel, Metal Oxide	3.8W	3700pF @ 25V	140nC @ 5V	Lead free / RoHS Compliant	3.8 W	55 ns	N-Channel	55 A	�16 V	-55C to 175C	D2PAK	3	N	Power MOSFET	1	Military	100 V	No	D2PAK	N-MOSFET	3.8W	100V	unipolar	55A	800	0.43 g	800	800	0.026 ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	D2PAK	800	16 V	SMD/SMT	100 V	RoHS Compliant	93.3 nC	-	-	-	N	-	-	-	-	-	-	-	-	1	-	-	-	HEXFET	-	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±16	Compliant	175	D2PAK	-55	26@10V	100	D2PAK	3800	55	Gull-wing	IRL2910STRLPBFCT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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International Rectifier- 场效应晶体管（FET）

场效应晶体管（FET） - 型号列表共 2,391 个型号

Current - Continuous Drain (Id) @ 25° C

Maximum Continuous Drain Current

Typical Turn-On Delay Time

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) @ Vds

RDS-on

Typical Rise Time

Typical Fall Time

Gate Charge (Qg) @ Vgs

Continuous Drain Current

Time,Turn-OnDelay

Typical Turn-Off Delay Time

Current,Drain

GateCharge,Total

Drain current

Gate Charge Qg

Drain-Source On-Res

Time,Turn-OffDelay

Drain Current (Max)

Resistance,DraintoSourceOn

Transconductance,Forward

On Resistance Rds(on)

Gross weight

Continuous Drain Current Id

Power - Max

Power Dissipation

Rds On

Collective package [pcs]

spg

Current Id Max

Gate charge

Rise Time

Fall Time

PowerDissipation

Power

Typical Gate Charge @ Vgs

Typical Input Capacitance @ Vds

Maximum Continuous Drain Current

Other Names

Voltage,Breakdown,DraintoSource

Drain-source voltage

Pulse Current Idm

On-state resistance

Maximum Drain Source Resistance

Package / Case

Drain-Source Breakdown Voltage

Maximum Drain Source Resistance

Package

Maximum Drain Source Voltage

Drain to Source Voltage (Vdss)

Supplier Device Package

Drain-Source On-Volt

PackageType

Case

Threshold Voltage Vgs

Power Dissipation Pd

SMD Marking

Voltage Vgs Max

Maximum Power Dissipation

Vgs(th) (Max) @ Id

Factory Pack Quantity

Package/Case

Forward Transconductance - Min

Package Type

Voltage,Forward,Diode

Maximum Power Dissipation

Drain Source Voltage Vds

Maximum Drain Source Voltage

Gate-Source Breakdown Voltage

Voltage Vds Typ

Weight (kg)

Junction to Case Thermal Resistance A

FET Type

Configuration

Maximum Operating Temperature

Pin Count

Height

Transistor Case Style