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Infineon Technologies AG
绝缘栅双极型晶体管和功率驱动器

Infineon Technologies AG- 绝缘栅双极型晶体管和功率驱动器

英飞凌科技股份公司（Infineon Technologies AG）于1999年5月1日由西门子半导体部门独立并更名成立，总部位于德国慕尼黑。公司是全球领先的半导体解决方案提供商，核心业务涵盖汽车、工业、通信及消费电子领域。主要产品线包括功率器件（如CoolMOS、OptiMOS、CoolSiC、CoolGaN系列）、微控制器（AURIX、TRAVEO、XMC系列）、传感器（磁性传感器、压力传感器、雷达芯片）以及安全芯片（SLE 78、OPTIGA系列）等。英飞凌致力于应对能源效率、出行和安全三大社会核心挑战。公司在全球多个国家拥有制造基地和研发中心，构建了完整的产业链。英飞凌在汽车电子和功率半导体领域居于市场领导地位，是全球最大的汽车半导体供应商之一。其企业口号为'永不停止思考'，彰显持续创新的精神。在中国，英飞凌曾投资成立奇梦达生产内存产品，并与本地代理商广泛合作。凭借先进的工艺技术和系统级方案，英飞凌不断推动智能化和绿色电子系统发展。

MODELS

绝缘栅双极型晶体管和功率驱动器 - 型号列表共 144 个型号

制造商零件编号	价格/库存	Configuration	Maximum Collector Emitter Voltage	Maximum Continuous Collector Current	Maximum Gate Emitter Voltage	DC Collector Current	Collector Emitter Voltage Vces	Power Dissipation Pd	Collector Emitter Voltage V(br)ceo	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	No. of Pins	Weight (kg)	Tariff No.	Mounting	Package	Package / Case	Collector- Emitter Voltage VCEO Max	Mounting Style	Minimum Operating Temperature	Maximum Operating Temperature	RoHS	Operating Temperature Range	Power Dissipation Max	MSL	Mounting Type	rohs	Standard Package	Gate Charge	Current - Collector (Ic) (Max)	Switching Energy	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Packaging	Power - Max	Input Type	IGBT Type	Test Condition	Current - Collector Pulsed (Icm)	Series	Part # Aliases	Transistor Type	Transistor Polarity	Pin Count	P(tot)	Matchcode	I(C)	Unit Pack	Standard Leadtime	MOQ	Leadfree Defin.	td(off)	Technology	Automotive	V(CE)	V(CEsat)	Bodydiode	Product Category	td(on)	t(r)	Continuous Collector Current Ic Max	Continuous Collector Current at 25 C	Dimensions	Height	Length	Package Type	Width	Gate-Emitter Leakage Current	Collector-Emitter Saturation Voltage	Power Dissipation	Current Ic Continuous a Max	Termination Type	Voltage Vces	Maximum Power Dissipation	Reverse Recovery Time (trr)	No. of Transistors	Channel Type	Product	Case	Transistor type	Power	Collector-emitter voltage	Multiplicity	Collector current	Gross weight	Collective package [pcs]	spg	Factory Pack Quantity	Module Configuration	Current Temperature	Full Power Rating Temperature	Pulsed Current Icm	Collector Current (DC) (Max)	Collector-Emitter Voltage	Operating Temperature (Max)	Operating Temperature (Min)	Operating Temperature Classification	Gate to Emitter Voltage (Max)	Rad Hardened	DELETED	Collector Current (DC)	Current Ic @ Vce Sat	Device Marking	Fall Time tf	Junction Temperature Tj Max	Junction Temperature Tj Min	Power Dissipation Ptot Max	Rise Time	Voltage Vce Sat Typ
5 IKW30N60T Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	600 V	60 A	±20 V	:60A	:2.05V	:187W	:600V	:-40°C	:175°C	:TO-247	:3	0.0049	85412900	Through Hole	3TO-247	TO-247-3	600 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +175°C	:187W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	167nC	60A	1.46mJ	23ns/254ns	2.05V @ 15V, 30A	600V	PG-TO247-3	Tube	187W	Standard	Trench and Field Stop	400V, 30A, 10.6 Ohm, 15V	90A	IKW30N60	IKW30N60TFKSA1 SP000054887	:IGBT	:N Channel	-	187W	IKW30N60T	60A	30	22 weeks	240	RoHS-conform	254nS	TrenchStop	NO	600V	2.05V	YES	IGBT Transistors	23nS	21nS	60 A	-	-	-	-	-	-	-	-	-	:25A	:Through Hole	:600V	-	143ns	:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IKW15T120 Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	1200 V	30 A	±20 V	:30A	:2.2V	:110W	:1.2kV	:-40°C	:150°C	:TO-247	:3	0.0049	85412900	Through Hole	3TO-247	TO-247-3	1200 V	Through Hole	-40 °C	+150 °C	RoHS Compliant	:-40°C to +150°C	:110W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	85nC	30A	2.7mJ	50ns/520ns	2.2V @ 15V, 15A	1200V	PG-TO247-3	Tube	110W	Standard	NPT, Trench and Field Stop	600V, 15A, 56 Ohm, 15V	45A	IKW15T120	IKW15T120FKSA1 SP000013938	:IGBT	:N Channel	3	110W	IKW15T120	30A	240	22 weeks	240	RoHS-conform	520nS	TrenchStop	NO	1200V	2.2V	YES	IGBT Transistors	50nS	30nS	30 A	-	16.03 x 21.1 x 5.16mm	5.16mm	16.03mm	PG-TO-247-3	21.1mm	-	-	-	:15A	:Through Hole	:1.2kV	110 W	140ns	:1	-	-	TO247	IGBT	110W	1.2kV	1	30A	8.32 g	5	5	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IGW75N60T Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	600 V	150 A	±20 V	:75A	:2V	:428W	:600V	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	600 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +175°C	:428W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	470nC	150A	4.5mJ	33ns/330ns	2V @ 15V, 75A	600V	PG-TO247-3	Tube	428W	Standard	Trench and Field Stop	400V, 75A, 5 Ohm, 15V	225A	IGW75N60	IGW75N60TFKSA1 IGW75N60TXK SP000054927	:IGBT	-	3	428W	IGW75N60T	150A	240	21 weeks	240	RoHS-conform	330nS	2-20kHz	NO	600V	1.5V	NO	IGBT Transistors	33nS	36nS	150 A	-	16.13 x 21.1 x 5.21mm	5.21mm	16.13mm	PG-TO-247-3	21.1mm	-	-	-	-	-	-	428 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 FF450R12KT4 Trans IGBT Module N-CH 1.2KV 580A 7-Pin 62MM infineon technologies	询价	Dual	1200 V	580 A	±20 V	:580A	:1.75V	:2.4kW	:1.2kV	:-40°C	:150°C	:Module	:7	0.25	85412900	Screw	762MM	62 mm	1200 V	Screw	-40 °C	+150 °C	RoHS Compliant	-	-	:MSL 1 - Unlimited	Screw	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Dual NPN	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	580 A	106.4 x 61.4 x 30.9mm	30.9mm	106.4mm	-	61.4mm	400 nA	2.1 V	2400 W	-	-	-	2400 W	-	-	N	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IHW15N120R3 Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	1200 V	30 A	±25 V	:15A	:1.7V	:254W	:1.2kV	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	-	-	-	-	RoHS Compliant	:-40°C to +175°C	:254W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	165nC	30A	700µJ (off)	-/300ns	1.7V @ 15V, 15A	1200V	PG-TO247-3	Tube	254W	Standard	Trench	600V, 15A, 14.6 Ohm, 15V	45A	IHW15N120	IHW15N120R3FKSA1 SP000521590	:IGBT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IKW25T120 Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	1200 V	50 A	±20 V	:50A	:2.2V	:190W	:1.2kV	:-40°C	:150°C	:TO-247	:3	0.0049	85412900	Through Hole	3TO-247	TO-247-3	1200 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +150°C	:190W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	155nC	50A	4.2mJ	50ns/560ns	2.2V @ 15V, 25A	1200V	PG-TO247-3	Tube	190W	Standard	NPT, Trench and Field Stop	600V, 25A, 22 Ohm, 15V	75A	IKW25T120	IKW25T120FKSA1 SP000013939	:IGBT	:N Channel	3 +Tab	190W	IKW25T120	50A	30	22 weeks	240	RoHS-conform	560nS	TrenchStop	NO	1200V	2.2V	YES	IGBT Transistors	50nS	30nS	50 A	-	-	-	-	TO-247	-	-	-	-	:25A	:Through Hole	:1.2kV	-	200ns	:1	N	-	TO247	IGBT	190W	1.2kV	1	50A	8.37 g	5	5	-	-	-	-	-	50 A	1200 V	150C	-40C	Automotive	�20 V	No	Compliant	50 A	-	-	-	-	-	-	-	-
6 SGW30N60 Trans IGBT Chip N-CH 600V 41A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	600 V	41 A	±20 V	:41A	:2.4V	:250W	:600V	:-55°C	:150°C	:TO-247AC	:3	0.006	85412900	Through Hole	3TO-247	TO-247-3	600 V	Through Hole	-55 °C	+150 °C	RoHS Compliant	:-55°C to +150°C	:250W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	140nC	41A	1.29mJ	44ns/291ns	2.4V @ 15V, 30A	600V	PG-TO247-3	Tube	250W	Standard	NPT	400V, 30A, 11 Ohm, 15V	112A	SGW30N60	SGW30N60FKSA1 SP000012467	:IGBT	:N Channel	3	250W	SGW30N60	41A	30	22 weeks	30	RoHS-conform	389nS	Fast IGBT	NO	600V	2.4V	NO	IGBT Transistors	53nS	40nS	41 A	-	15.9 x 5.3 x 20.95mm	20.95mm	15.9mm	TO-247	5.3mm	-	-	-	:41A	:Through Hole	:600V	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	:25°C	:25°C	:112A	-	-	-	-	-	-	-	-	-	:30A	:SGW30N60	:70ns	:150°C	:-55°C	:250W	:35ns	-
7 IKW40N120H3 Trans IGBT Chip N-CH 400V 3-Pin(3+Tab) TO-247 T/R infineon technologies	询价	Single Quad Collector Triple Emitter	400 V	80 A	±6 V	:40A	:2.4V	:483W	:1.2kV	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	1200 V	Through Hole	-40 °C	+175 °C	RoHS Compliant	:-40°C to +175°C	:483W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	185nC	80A	4.4mJ	30ns/290ns	2.4V @ 15V, 40A	1200V	PG-TO247-3	Tube	483W	Standard	Trench and Field Stop	600V, 40A, 12 Ohm, 15V	160A	IKW40N120	IKW40N120H3FKSA1 SP000674416	:IGBT	-	3	483W	IKW40N120H3	80A	30	21 weeks	240	RoHS-conform	290nS	HighSpeed	NO	1200V	2.40V	YES	IGBT Transistors	30nS	57nS	80 A	80 A	16.03 x 5.16 x 21.1mm	21.1mm	16.03mm	PG-TO-247-3	5.16mm	600 nA	2.05 V	483 W	-	-	-	483 W	355ns	-	N	-	-	-	-	-	-	-	-	-	-	240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IHW20N120R3 Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	1200 V	40 A	±25 V	:20A	:1.7V	:310W	:1.2kV	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	1200 V	Through Hole	- 40 C	+ 175 C	RoHS Compliant	:-40°C to +175°C	:310W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	211nC	40A	950µJ (off)	-/387ns	1.7V @ 15V, 20A	1200V	PG-TO247-3	Tube	310W	Standard	Trench	600V, 20A, 15 Ohm, 15V	60A	IHW20N120	IHW20N120R3FKSA1 SP000437702	:IGBT	-	-	310W	IHW20N120R3	40A	240	18 weeks	240	RoHS-conform	387nS	TRENCHSTOP	NO	1200V	1.48V	YES	-	-	-	-	40 A	-	-	-	-	-	100 nA	1.48 V	310 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FF200R12KE4 Trans IGBT Module N-CH 1.2KV 240A 7-Pin 62MM infineon technologies	询价	Dual	1200 V	240 A	±20 V	:240A	:1.75V	:1.1kW	:1.2kV	:-40°C	:150°C	:Module	:7	0.25	85412900	Screw	762MM	62 mm	1200 V	Screw	- 40 C	+ 150 C	RoHS Compliant	-	-	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Dual NPN	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	240 A	-	-	-	-	-	400 nA	2.05 V	1100 W	-	-	-	-	-	-	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IKP15N60T Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220AB infineon technologies	询价	Single	600 V	30 A	±20 V	:30A	:2.05V	:130W	:600V	:-40°C	:175°C	:TO-220	:3	0.0018	85412900	Through Hole	3TO-220AB	TO-220-3	600 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +175°C	:130W	:-	Through Hole	Lead free / RoHS Compliant	Tape & Reel	87nC	30A	570µJ	17ns/188ns	2.05V @ 15V, 15A	600V	PG-TO220-3	Tube	130W	Standard	Trench and Field Stop	400V, 15A, 15 Ohm, 15V	45A	IKP15N60	IKP15N60TXKSA1 SP000683064	:IGBT	:N Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IGBT Transistors	-	-	30 A	-	-	-	-	-	-	-	-	-	:15A	:Through Hole	:600V	-	34ns	:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IGW50N60H3 Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	600 V	100 A	±20 V	:50A	:2.3V	:333W	:600V	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	600 V	Through Hole	-40 °C	+175 °C	RoHS Compliant	:-40°C to +175°C	:333W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	315nC	100A	2.36mJ	23ns/235ns	2.3V @ 15V, 50A	600V	PG-TO247-3	Tube	333W	Standard	Trench and Field Stop	400V, 50A, 7 Ohm, 15V	200A	IGW50N60	IGW50N60H3FKSA1 SP000702548	:IGBT	-	3	333W	IGW50N60H3	100A	30	22 weeks	240	RoHS-conform	235nS	TrenchStop	NO	600V	2V	NO	-	23nS	24nS	-	50 A	16.13 x 5.21 x 21.1mm	21.1mm	16.13mm	PG-TO-247-3	5.21mm	100 nA	1.85 V	333 W	-	-	-	333 W	-	-	N	-	-	-	-	-	-	-	-	-	-	240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FF200R17KE4 Trans IGBT Module N-CH 1.7KV 310A infineon technologies	询价	Dual	1700 V	310 A	±20 V	:310A	:1.95V	:1.25kW	:1.7kV	:-40°C	:150°C	:Module	:7	0.25	85412900	-	-	62 mm	1700 V	Screw	- 40 C	+ 150 C	RoHS Compliant	-	-	:MSL 1 - Unlimited	-	-	Trays	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Dual NPN	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	310 A	-	-	-	-	-	100 nA	2.45 V	1250 W	-	-	-	-	-	-	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 FF450R17IE4 Trans IGBT Module N-CH 1.7KV 620A 10-Pin infineon technologies	询价	Dual	1700 V	620 A	±20 V	:450A	:2V	:900W	:1.7kV	:-40°C	:150°C	:Module	:10	0.825	85413000	Screw	-	-	-	-	-	-	-	:-40°C to +150°C	:2.8kW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	10	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Dual	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 BSM25GD120DN2 Trans IGBT Module N-CH 1.2KV 35A 17-Pin EconoPACK 2A infineon technologies	询价	Hex	1200 V	35 A	±20 V	:35A	:3V	:200W	:1.2kV	:-40°C	:125°C	:EconoPACK	:17	0.18	85415000	Screw	17EconoPACK 2A	EconoPACK 2A	1200 V	Screw	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +125°C	:200W	-	Through Hole	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	17	-	-	-	-	-	-	-	-	-	-	-	-	-	IGBT Modules	-	-	-	35 A	107.5 x 45 x 17mm	17mm	107.5mm	ECONOPACK 2	45mm	180 nA	2.5 V	200 W	:25A	:Solder	:1.2kV	200 W	-	:6	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	500	:Six	:80°C	:25°C	:50A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:2.5V
3 FP35R12W2T4 Trans IGBT Module N-CH 1.2KV 54A 23-Pin EASY2B infineon technologies	询价	Hex	1200 V	54 A	±20 V	:35A	:1.85V	:215W	:1.2kV	:-40°C	:150°C	:Module	:23	0.039	85413000	Screw	23EASY2B	EASY2B	1200 V	Screw	- 40 C	+ 150 C	-	:-40°C to +150°C	:215W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	23	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	54 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IGW40N60H3 Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	600 V	80 A	±20 V	:40A	:2.4V	:306W	:600V	:-40°C	:175°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	600 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +175°C	:306W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	223nC	80A	1.68mJ	19ns/197ns	2.4V @ 15V, 40A	600V	PG-TO247-3	Tube	306W	Standard	Trench and Field Stop	400V, 40A, 7.9 Ohm, 15V	160A	IGW40N60	IGW40N60H3FKSA1 SP000769926	:IGBT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40 A	-	-	-	-	-	100 nA	1.95 V	306 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IGW25T120 Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 infineon technologies	询价	Single	1200 V	50 A	±20 V	:25A	:2.2V	:190W	:1.2kV	:-40°C	:150°C	:TO-247	:3	0.00542	85412900	Through Hole	3TO-247	TO-247-3	1200 V	Through Hole	- 40 C	+ 150 C	RoHS Compliant	:-40°C to +150°C	:190W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	155nC	50A	4.2mJ	50ns/560ns	2.2V @ 15V, 25A	1200V	PG-TO247-3	Tube	190W	Standard	NPT, Trench and Field Stop	600V, 25A, 22 Ohm, 15V	75A	IGW25T120	IGW25T120FKSA1 SP000013887	:IGBT	-	-	190W	IGW25T120	50A	240	21 weeks	240	RoHS-conform	660nS	2-20kHz	NO	1200V	2.2V	NO	IGBT Transistors	50nS	32nS	50 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 IKP10N60T Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220AB infineon technologies	询价	Single	600 V	20 A	±20 V	:20A	:2.05V	:110W	:600V	:-40°C	:175°C	:TO-220	:3	0.0018	85412900	Through Hole	3TO-220AB	TO-220-3	600 V	Through Hole	-40 °C	+175 °C	RoHS Compliant	:-40°C to +175°C	:110W	:-	Through Hole	Lead free / RoHS Compliant	Rail / Tube	62nC	20A	430µJ	12ns/215ns	2.05V @ 15V, 10A	600V	PG-TO220-3	Tube	110W	Standard	NPT, Trench and Field Stop	400V, 10A, 23 Ohm, 15V	30A	IKP10N60	IKP10N60TXKSA1 SP000683062	:IGBT	:N Channel	3	110W	IKP10N60T	10A	50	20 weeks	500	RoHS-conform	215nS	TrenchStop	NO	600V	2.05V	YES	IGBT Transistors	12nS	8nS	20 A	-	10.36 x 4.57 x 15.95mm	15.95mm	10.36mm	PG-TO-220-3-1	4.57mm	-	-	-	:10A	:Through Hole	:600V	110 W	115ns	:1	N	-	TO220	IGBT	110W	600V	500	10A	3.81 g	6	6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 F430R06W1E3 Trans IGBT Module N-CH 600V 48A 18-Pin EASY1B infineon technologies	询价	Quad	600 V	48 A	±20 V	:30A	:1.55V	:165W	:600V	:-40°C	:150°C	:Module	:15	0.024	85413000	Screw	18EASY1B	-	-	-	-	-	-	:-40°C to +150°C	:165W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:N Channel	18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Quad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Infineon Technologies AG- 绝缘栅双极型晶体管和功率驱动器

绝缘栅双极型晶体管和功率驱动器 - 型号列表共 144 个型号

Power Dissipation Pd

Maximum Continuous Collector Current

Power Dissipation Max

DC Collector Current

Series

Part # Aliases

Gate Charge

Switching Energy

Td (on/off) @ 25°C

Test Condition

Vce(on) (Max) @ Vge, Ic

Power - Max

Collector Emitter Voltage Vces

Matchcode

td(off)

I(C)

Current - Collector (Ic) (Max)

Current - Collector Pulsed (Icm)

Weight (kg)

P(tot)

t(r)

Dimensions

Continuous Collector Current at 25 C

Power Dissipation

V(CEsat)

Continuous Collector Current Ic Max

Height

Pin Count

Width

Collector-Emitter Saturation Voltage

Package

td(on)

Reverse Recovery Time (trr)

No. of Pins

Length

Maximum Power Dissipation

Configuration

Technology

Package / Case

Transistor Case Style

Maximum Collector Emitter Voltage

Standard Leadtime

IGBT Type

Maximum Operating Temperature

Current Ic Continuous a Max

Operating Temperature Range

Package Type

Gate-Emitter Leakage Current

Maximum Gate Emitter Voltage

Standard Package

Unit Pack

MOQ

Collector- Emitter Voltage VCEO Max

Minimum Operating Temperature

Collector Emitter Voltage V(br)ceo

Operating Temperature Max

Tariff No.

Collector current

Gross weight

Module Configuration

Mounting

V(CE)

Bodydiode

Mounting Type

Voltage - Collector Emitter Breakdown (Max)

Supplier Device Package

rohs

Product Category

Mounting Style

Operating Temperature Min

MSL

No. of Transistors

Termination Type

Transistor Polarity

Voltage Vces

Case

Power

Collector-emitter voltage