Infineon Technologies AG- 单场效应晶体管

英飞凌科技股份公司（Infineon Technologies AG）于1999年5月1日由西门子半导体部门独立并更名成立，总部位于德国慕尼黑。公司是全球领先的半导体解决方案提供商，核心业务涵盖汽车、工业、通信及消费电子领域。主要产品线包括功率器件（如CoolMOS、OptiMOS、CoolSiC、CoolGaN系列）、微控制器（AURIX、TRAVEO、XMC系列）、传感器（磁性传感器、压力传感器、雷达芯片）以及安全芯片（SLE 78、OPTIGA系列）等。英飞凌致力于应对能源效率、出行和安全三大社会核心挑战。公司在全球多个国家拥有制造基地和研发中心，构建了完整的产业链。英飞凌在汽车电子和功率半导体领域居于市场领导地位，是全球最大的汽车半导体供应商之一。其企业口号为'永不停止思考'，彰显持续创新的精神。在中国，英飞凌曾投资成立奇梦达生产内存产品，并与本地代理商广泛合作。凭借先进的工艺技术和系统级方案，英飞凌不断推动智能化和绿色电子系统发展。

MODELS

单场效应晶体管 - 型号列表共 8,700 个型号

制造商零件编号	价格/库存	Package / Case	RoHS	Package	Mounting	Mounting Style	Configuration	Maximum Operating Temperature	Standard Package	Packaging	Minimum Operating Temperature	Part # Aliases	Factory Pack Quantity	Transistor Polarity	Product Category	Operating Temperature	Series	Brand	Mounting Type	Supplier Device Package	Power - Max	rohs	Transistor Type	Length	Height	Maximum Collector Emitter Voltage	Collector- Emitter Voltage VCEO Max	Width	Pin Count	Pd - Power Dissipation	Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Technology	Power Dissipation	Minimum DC Current Gain	Channel Mode	Maximum Drain Source Voltage	Maximum Continuous Drain Current	RDS-on	Maximum Gate Source Voltage	Typical Turn-On Delay Time	Typical Rise Time	Typical Turn-Off Delay Time	Fall Time	Rise Time	Continuous Collector Current	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Other Names	Tradename	Typical Fall Time	Continuous Drain Current	Rds On	Drain-Source Breakdown Voltage	DC Collector/Base Gain hfe Min	Operating Temperature Range	Maximum Power Dissipation	Maximum Continuous Collector Current	Maximum Gate Emitter Voltage	Peak DC Collector Current	Collector-Emitter Saturation Voltage	P(tot)	Matchcode	Unit Pack	Standard Leadtime	MOQ	Automotive	Leadfree Defin.	FET Feature	Current - Continuous Drain (Id) @ 25° C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) @ Vds	Gate Charge (Qg) @ Vgs	Gate-Source Breakdown Voltage	Power Dissipation Pd	Operating Temperature Min	Operating Temperature Max	Transistor Case Style	No. of Pins	MSL	Weight (kg)	Tariff No.	Channel Type	Number of Elements per Chip	Vds - Drain-Source Breakdown Voltage	Number of Channels	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Product	Maximum DC Collector Current	Maximum Operating Frequency	Maximum Collector Emitter Saturation Voltage	Gain Bandwidth Product fT	Emitter- Base Voltage VEBO	Collector- Base Voltage VCBO	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	Typical Input Resistor	Typical Resistor Ratio	I(C)	td(on)	t(r)	td(off)	V(CE)	V(CEsat)	Bodydiode	Gate Charge	Switching Energy	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Input Type	IGBT Type	Test Condition	Current - Collector Pulsed (Icm)	Continuous Collector Current Ic Max	Termination Type	Maximum Gate Source Voltage	EU RoHS	Maximum Operating Temperature	Standard Package Name	Package Height	Maximum Power Dissipation	Maximum Drain Source Resistance	Minimum Operating Temperature	Maximum Drain Source Voltage	Package Width	Supplier Package	Package Length	PCB	Maximum Continuous Drain Current	Lead Shape	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Vgs - Gate-Source Voltage	Forward Transconductance - Min	Vr - Reverse Voltage	长度	最高工作温度	晶体管类型	安装类型	高度	最大功率耗散	宽度	封装类型	最大集电极-发射极电压	引脚数目	最小直流电流增益	尺寸	晶体管配置	最大发射极-基极电压	最大集电极-发射极饱和电压	每片芯片元件数目	Package/Case	Dimensions	Package Type	Continuous Drain Current Id	Drain Source Voltage Vds	On Resistance Rds(on)	Rds(on) Test Voltage Vgs	Threshold Voltage Vgs	Current Id Max	Voltage Vgs Max	DC Collector Current	Collector Emitter Voltage Vces	Collector Emitter Voltage V(br)ceo	Current Ic Continuous a Max	No. of Transistors	Power Dissipation Max	Voltage Vces	DC Current Gain hFE Max	Gate-Emitter Leakage Current	Continuous Collector Current at 25 C	Tab	Gate Charge Qg	Peak Reverse Repetitive Voltage	Peak Average Forward Current	Peak Reverse Recovery Time	Peak Reverse Current	Peak Forward Voltage	Peak Non-Repetitive Surge Current	Vf - Forward Voltage	Termination Style	trr - Reverse Recovery time	Ifsm - Forward Surge Current	Ir - Reverse Current	If - Forward Current	Output Current	Reverse Voltage	Gate Trigger Current - Igt	最大直流集电极电流	晶体管材料	最大基极-发射极饱和电压	最大集电极-基极电压	典型输入电阻器	典型电阻比	最大连续集电极电流	Current - Collector Cutoff (Max)	R(thJC)	LogicLevel	Q(g)	LLRDS(on)	LLRDS(on)at	I(D)	V(DS)	RDS(on)at10V	Category	Maximum Drain Source Resistance	Typical Gate Charge @ Vgs	Typical Input Capacitance @ Vds	Pulse Current Idm	Voltage Vds	Voltage Vds Typ	Voltage Vgs Rds on Measurement	Maximum Collector Base Voltage	Case	Transistor type	Power	Collector-emitter voltage	Multiplicity	Collector current	Gross weight	Collective package [pcs]	spg
BSC020N03LSGATMA1 Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP infineon technologies	询价	TDSON-8	RoHS Compliant	8TDSON EP	Surface Mount	SMD/SMT	1 N-Channel	+ 150 C	Tape & Reel	Reel	- 55 C	-	5000	N-Channel	-	-55 to 150 °C	-	Infineon Technologies	-	-	-	-	1 N-Channel	5.9 mm	1.27 mm	-	-	5.15 mm	8	96 W	-	-	-	Si	-	-	Enhancement	30 V	28 A	2@10V mOhm	±20 V	11 ns	7 ns	42 ns	7 ns	7 ns	-	-	-	-	-	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	1	30 V	1 Channel	100 A	1.7 mOhms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±20	Compliant	150	SON	1	2500	2@10V	-55	30	5.9	TDSON EP	5.15	8	28	No Lead	1 V	93 nC	20 V	65 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPP20N60CFDXKSA1 Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB infineon technologies	询价	TO-220	RoHS Compliant	3TO-220AB	Through Hole	Through Hole	Single	+ 150 C	Rail / Tube	Tube	- 55 C	SP000681060	500	N-Channel	-	-55 to 150 °C	SPP20N60	Infineon Technologies	-	-	-	-	1 N-Channel	10 mm	15.65 mm	-	-	4.4 mm	3	208 W	-	-	-	Si	208 W	-	Enhancement	650 V	20.7 A	220@10V mOhm	±20 V	12 ns	15 ns	59 ns	6.4 ns	15 ns	-	-	-	-	-	CoolMOS	6.4 ns	20.7 A	190 mOhms	600 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	1	600 V	1 Channel	20.7 A	190 mOhms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±20	Compliant	150	TO-220	9.25	208000	220@10V	-55	650	4.4	TO-220AB	10	3	20.7	Through Hole	4 V	95 nC	-	17.5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tab	95 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR133E6327XT Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R infineon technologies	询价	SOT-23	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Cut Tape	Reel	-	133 BCR BCR133E6327HTSA1 E6327 SP000010757	3000	NPN	-	-65 to 150 °C	-	Infineon Technologies	-	-	-	-	-	-	-	50 V	50 V	-	-	200 mW	NPN	-	-	-	-	30@5mA@5V	-	-	-	-	-	-	-	-	-	-	100 mA	-	-	-	-	-	-	-	-	-	30	-	-	-	-	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BAT64E6327XT Diode Schottky 40V 0.25A 3-Pin SOT-23 T/R infineon technologies	询价	SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Tape & Reel	Reel	- 55 C	64 BAT BAT64E6327HTSA1 E6327 SP000010307	3000	-	-	-55 to 150 °C	-	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	250 mW	Schottky Diode	-	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	- 55 C to + 150 C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Schottky Diodes	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40 V	0.25 A	5 ns	2@30V uA	0.75@0.1A V	0.8 A	570 mV	SMD/SMT	5 ns	800 mA	2 uA	250 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DZ1070N22K Discrete Semiconductor Modules 2200V 1700A infineon technologies	询价	DZ107	No	-	-	Screw	-	-	-	-	-	DZ1070N2200	50	-	Discrete Semiconductor Modules	-	-	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	-	Rectifier Diode Module	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2200 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1700 A	2200 V	150 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BC 858B E6327 Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R infineon technologies	询价	TO-236-3, SC-59, SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	-	Single	+ 150 C	3,000	Tape & Reel (TR)	-	BC858BE6327HTSA1 SP000010634	3000	PNP	Transistors Bipolar - BJT	-65 to 150 °C	BC858	-	Surface Mount	PG-SOT23-3	330mW	Lead free / RoHS Compliant	PNP	-	-	30 V	30 V	-	3	-	PNP	100mA	30V	-	-	220@2mA@5V	-	-	-	-	-	-	-	-	-	-	-	250MHz	650mV @ 5mA, 100mA	220 @ 2mA, 5V	BC 858B E6327CT	-	-	-	-	-	220 at 2 mA at 5 V	-	330 mW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.1 A	250(Typ) MHz	0.3@0.5mA@10mA\|0.65@5mA@100mA V	250 MHz (Typ)	5 V	30 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.9mm	+150 °C	PNP	表面贴装	0.9mm	330 mW	1.3mm	SOT-23	30 V	3	125	2.9 x 1.3 x 0.9mm	单	5 V	650 mV	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.1 A	Si	850 mV	30 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 BCR 116 E6327 Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R infineon technologies	询价	TO-236-3, SC-59, SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Tape & Reel	Tape & Reel (TR)	- 65 C	BCR116E6327HTSA1 SP000010749	3000	NPN	Transistors Switching - Resistor Biased	-65 to 150 °C	BCR116	Infineon Technologies	Surface Mount	PG-SOT23-3	200mW	Lead free / RoHS Compliant	NPN - Pre-Biased	2.9 mm	1 mm	50 V	50 V	1.3 mm	-	-	NPN	100mA	50V	-	-	70@5mA@5V	-	-	-	-	-	-	-	-	-	-	100 mA	150MHz	300mV @ 500µA, 10mA	70 @ 5mA, 5V	BCR 116 E6327CT	-	-	-	-	-	70	-	-	-	-	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.7k	47k	4.7 KOhms	0.1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.9mm	+150 °C	NPN	表面贴装	0.9mm	200 mW	1.3mm	SOT-23	50 V	3	70	2.9 x 1.3 x 0.9mm	单	5 V	0.3 V	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.7 kΩ	0.1	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BCX 41 E6327 Trans GP BJT NPN 125V 0.8A 3-Pin SOT-23 T/R infineon technologies	询价	TO-236-3, SC-59, SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Tape & Reel	Tape & Reel (TR)	- 65 C	BCX41E6327HTSA1 BCX41E6327XT SP000010894	3000	NPN	-	-65 to 150 °C	BCX41	Infineon Technologies	Surface Mount	PG-SOT23-3	330mW	Lead free / RoHS Compliant	NPN	2.9 mm	1 mm	125 V	125 V	1.3 mm	3	330 mW	NPN	800mA	125V	-	-	25@100uA@1V\|63@100mA@1V\|40@200mA@1V	-	-	-	-	-	-	-	-	-	-	800 mA	100MHz	900mV @ 30mA, 300mA	40 @ 200mA, 1V	BCX 41 E6327CT	-	-	-	-	-	-	-	330 mW	-	-	-	0.9 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.8 A	100(Typ) MHz	0.9@30mA@300mA V	100 MHz	5 V	125 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 BSC120N03MS G Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP infineon technologies	询价	TDSON	RoHS Compliant	8TDSON EP	Surface Mount	SMD/SMT	Quad Drain, Single Gate, Triple Source	+150 °C	Tape & Reel	Tape & Reel (TR)	-55 °C	BSC120N03MSGATMA1 SP000311516	-	N-Channel	MOSFET	-55 to 150 °C	BSC120N03	-	Surface Mount	PG-TDSON-8 (5.15x6.15)	28W	Lead free / RoHS Compliant	:Power MOSFET	5.35mm	1.1mm	-	-	6.1mm	8	-	-	-	-	OptiMOS	2.5 W	-	Enhancement	30 V	11 A	12@10V mOhm	±16 V	7.9 ns	4.4 ns	7 ns	5 ns	4.4 ns	-	-	-	-	BSC120N03MSGINCT	OptiMOS	5 ns	11 A	12 mOhms	30 V	-	:-55°C to +150°C	28 W	-	-	-	-	28W	BSC120N03MS G	5000	22 weeks	5000	NO	RoHS-conform	Logic Level Gate	11A (Ta), 39A (Tc)	2V @ 250µA	30V	12 mOhm @ 30A, 10V	MOSFET N-Channel, Metal Oxide	1500pF @ 15V	20nC @ 10V	+/- 16 V	:28W	:-55°C	:150°C	:PG-TSDSON	:8	:MSL 1 - Unlimited	0.002	85412900	N	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8-PowerTDFN	5.35 x 6.1 x 1.1mm	PG-TDSON-8	:39A	:30V	:10mohm	:10V	:1V	:39A	:20V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.5K/W	YES	10nC	0.014Ohm	4.5V	39A	30V	0.012Ohm	5 V Driver, SMPS	14 mΩ	15 nC V @ 0 → 10	1100 pF V @ 15	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IKW30N60T Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 infineon technologies	询价	TO-247-3	RoHS Compliant	3TO-247	Through Hole	Through Hole	Single	+ 150 C	Rail / Tube	Tube	- 40 C	IKW30N60TFKSA1 SP000054887	-	:N Channel	IGBT Transistors	-	IKW30N60	-	Through Hole	PG-TO247-3	187W	Lead free / RoHS Compliant	:IGBT	-	-	600 V	600 V	-	-	-	-	60A	600V	TrenchStop	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:-40°C to +175°C	-	60 A	±20 V	-	-	187W	IKW30N60T	30	22 weeks	240	NO	RoHS-conform	-	-	-	-	-	-	-	-	-	:187W	:-40°C	:175°C	:TO-247	:3	:-	0.0049	85412900	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	60A	23nS	21nS	254nS	600V	2.05V	YES	167nC	1.46mJ	23ns/254ns	2.05V @ 15V, 30A	143ns	Standard	Trench and Field Stop	400V, 30A, 10.6 Ohm, 15V	90A	60 A	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:60A	:2.05V	:600V	:25A	:1	:187W	:600V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SPA06N80C3 Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP infineon technologies	询价	TO-220-3 FP	RoHS Compliant	3TO-220FP	Through Hole	Through Hole	Single	+ 150 C	Rail / Tube	Tube	- 55 C	SP000216302 SPA06N80C3XKSA1	500	N-Channel	MOSFET	-55 to 150 °C	SPA06N80	-	Through Hole	PG-TO220-FP	39W	Lead free / RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	39 W	-	Enhancement	800 V	6 A	900@10V mOhm	±20 V	25 ns	15 ns	65 ns	8 ns	15 ns	-	-	-	-	-	CoolMOS	8 ns	6 A	900 mOhms	800 V	-	:-55°C to +150°C	-	-	-	-	-	-	-	-	-	-	-	-	Standard	6A (Tc)	3.9V @ 250µA	800V	900 mOhm @ 3.8A, 10V	MOSFET N-Channel, Metal Oxide	785pF @ 100V	41nC @ 10V	+/- 20 V	:39W	:-55°C	:150°C	:TO-220F	:3	:-	0.0018	85412900	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-220-3 Full Pack	-	-	:6A	:800V	:900mohm	:10V	:3V	:6A	:20V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:18A	:800V	:800V	:10V	-	-	-	-	-	-	-	-	-	-
2 SPA07N65C3 Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-220FP infineon technologies	询价	TO-220-3 Full Pack	RoHS Compliant	3TO-220FP	Through Hole	Through Hole	Single	+ 150 C	Rail / Tube	Tube	- 55 C	SP000216305 SPA07N65C3XKSA1	500	N-Channel	MOSFET	-55 to 150 °C	SPA07N65	Infineon Technologies	Through Hole	PG-TO220FP	32W	Lead free / RoHS Compliant	1 N-Channel	10.65 mm	16.15 mm	-	-	4.85 mm	-	32 W	-	-	-	Si	32 W	-	Enhancement	650 V	7.3 A	600@10V mOhm	±20 V	6 ns	3.5 ns	60 ns	7 ns	3.5 ns	-	-	-	-	-	CoolMOS	7 ns	7.3 A	600 mOhms	650 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Standard	7.3A (Tc)	3.9V @ 350µA	650V	600 mOhm @ 4.6A, 10V	MOSFET N-Channel, Metal Oxide	790pF @ 25V	27nC @ 10V	+/- 20 V	-	-	-	-	-	-	-	-	-	-	650 V	1 Channel	7.3 A	600 mOhms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BC 857BL3 E6327 Trans GP BJT PNP 45V 0.1A 3-Pin TSLP T/R infineon technologies	询价	SC-101, SOT-883	RoHS Compliant	3TSLP	Surface Mount	SMD/SMT	Single	+ 150 C	30,000	Tape & Reel (TR)	- 65 C	BC857BL3E6327XTMA1 SP000013556	15000	PNP	Transistors Bipolar - BJT	-65 to 150 °C	BC857BL3	Infineon Technologies	Surface Mount	PG-TSLP-3	250mW	Lead free / RoHS Compliant	PNP	1 mm	0.45 mm	45 V	45 V	0.6 mm	3	250 mW	PNP	100mA	45V	-	-	220@2mA@5V	-	-	-	-	-	-	-	-	-	-	0.1 A	250MHz	650mV @ 5mA, 100mA	220 @ 2mA, 5V	-	-	-	-	-	-	-	-	250 mW	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.1 A	250(Typ) MHz	0.3@0.5mA@10mA\|0.65@5mA@100mA V	250 MHz (Typ)	5 V	50 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50 V	-	-	-	-	-	-	-	-	-
BCR 112 E6327 Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R infineon technologies	询价	TO-236-3, SC-59, SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Tape & Reel	Tape & Reel (TR)	- 65 C	BCR112E6327HTSA1 SP000010747	3000	NPN	Transistors Switching - Resistor Biased	-65 to 150 °C	BCR112	Infineon Technologies	Surface Mount	PG-SOT23-3	200mW	Lead free / RoHS Compliant	NPN - Pre-Biased	2.9 mm	1 mm	50 V	50 V	1.3 mm	-	-	NPN	100mA	50V	-	-	20@5mA@5V	-	-	-	-	-	-	-	-	-	-	100 mA	140MHz	300mV @ 500µA, 10mA	20 @ 5mA, 5V	BCR 112 E6327CT	-	-	-	-	-	20	-	-	-	-	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.7k	4.7k	4.7 KOhms	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR 183 E6327 Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R infineon technologies	询价	TO-236-3, SC-59, SOT-23-3	RoHS Compliant	3SOT-23	Surface Mount	SMD/SMT	Single	+ 150 C	Tape & Reel	Tape & Reel (TR)	- 65 C	BCR183E6327HTSA1 SP000010794	3000	PNP	Transistors Switching - Resistor Biased	-65 to 150 °C	BCR183	Infineon Technologies	Surface Mount	PG-SOT23-3	200mW	Lead free / RoHS Compliant	PNP - Pre-Biased	2.9 mm	1 mm	50 V	50 V	1.3 mm	-	-	PNP	100mA	50V	-	-	30@5mA@5V	-	-	-	-	-	-	-	-	-	-	100 mA	200MHz	300mV @ 500µA, 10mA	30 @ 5mA, 5V	BCR 183 E6327CT	-	-	-	-	-	30	-	-	-	-	100 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10k	10k	10 KOhms	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM75GD120DN2 Trans IGBT Module N-CH 1.2KV 103A 21-Pin EconoPACK 3A infineon technologies	询价	EconoPACK 3A	RoHS Compliant	21EconoPACK 3A	Screw	Screw	Hex	+ 150 C	-	-	- 40 C	-	500	-	IGBT Modules	-	-	Infineon Technologies	-	-	-	-	-	122 mm	17 mm	1200 V	1200 V	-	21	520 W	-	-	-	-	520 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	103 A	±20 V	-	2.5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	320 nA	103 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM75GP60 Trans IGBT Module N-CH 600V 100A 24-Pin EconoPIM3 infineon technologies	询价	Econo PIM3	No	24EconoPIM3	Screw	Screw	Hex	+ 125 C	-	-	- 40 C	-	500	-	IGBT Modules	-	-	Infineon Technologies	-	-	-	-	-	122 mm	17 mm	600 V	600 V	-	24	310 W	-	-	-	-	310 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100 A	±20 V	-	2.2 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IGBT Silicon Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	300 nA	100 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSP135 L6906 Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R infineon technologies	询价	TO-261-4, TO-261AA	RoHS Compliant	4SOT-223	Surface Mount	SMD/SMT	Single Dual Drain	+ 150 C	1,000	Tape & Reel (TR)	- 55 C	BSP135L6906HTSA1	-	N-Channel	MOSFET	-55 to 150 °C	BSP135	-	Surface Mount	PG-SOT223-4	1.8W	Lead free / RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	1800 mW	-	Depletion	600 V	0.12 A	45000@10V mOhm	±20 V	5.4 ns	5.6 ns	28 ns	5.6 ns	5.6 ns	-	-	-	-	-	-	182 ns	0.12 A	45000 mOhms	600 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Depletion Mode	120mA (Ta)	1V @ 94µA	600V	45 Ohm @ 120mA, 10V	MOSFET N-Channel, Metal Oxide	146pF @ 25V	4.9nC @ 5V	+/- 20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IKW15N120T2 Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 infineon technologies	询价	TO-247-3	RoHS Compliant	3TO-247	Through Hole	Through Hole	Single	+ 150 C	Rail / Tube	Tube	- 40 C	IKW15N120T2FKSA1 SP000244961	-	-	IGBT Transistors	-	IKW15N120	-	Through Hole	PG-TO247-3	235W	Lead free / RoHS Compliant	-	-	-	1200 V	1200 V	-	-	-	-	30A	1200V	TrenchStop	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30 A	±20 V	-	2.2 V	235W	IKW15N120T2	30	22 weeks	30	NO	RoHS-conform	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30A	32nS	25nS	362nS	1200V	2.2V	YES	93nC	2.05mJ	32ns/362ns	2.2V @ 15V, 15A	300ns	Standard	Trench	600V, 15A, 41.8 Ohm, 15V	60A	30 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 IKW15T120 Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 infineon technologies	询价	TO-247-3	RoHS Compliant	3TO-247	Through Hole	Through Hole	Single	+150 °C	Rail / Tube	Tube	-40 °C	IKW15T120FKSA1 SP000013938	-	:N Channel	IGBT Transistors	-	IKW15T120	-	Through Hole	PG-TO247-3	110W	Lead free / RoHS Compliant	:IGBT	16.03mm	5.16mm	1200 V	1200 V	21.1mm	3	-	-	30A	1200V	TrenchStop	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:-40°C to +150°C	110 W	30 A	±20 V	-	-	110W	IKW15T120	240	22 weeks	240	NO	RoHS-conform	-	-	-	-	-	-	-	-	-	:110W	:-40°C	:150°C	:TO-247	:3	:-	0.0049	85412900	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30A	50nS	30nS	520nS	1200V	2.2V	YES	85nC	2.7mJ	50ns/520ns	2.2V @ 15V, 15A	140ns	Standard	NPT, Trench and Field Stop	600V, 15A, 56 Ohm, 15V	45A	30 A	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	16.03 x 21.1 x 5.16mm	PG-TO-247-3	-	-	-	-	-	-	-	:30A	:2.2V	:1.2kV	:15A	:1	:110W	:1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO247	IGBT	110W	1.2kV	1	30A	8.32 g	5	5

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Infineon Technologies AG- 单场效应晶体管

单场效应晶体管 - 型号列表共 8,700 个型号

Part # Aliases

Package / Case

Series

Power - Max

Package

Length

Height

Pd - Power Dissipation

Width

Transistor Type

Power Dissipation

Supplier Device Package

Maximum Continuous Drain Current

RDS-on

Typical Turn-On Delay Time

Typical Turn-Off Delay Time

Standard Package

Maximum Collector Emitter Voltage

Collector- Emitter Voltage VCEO Max

Product Category

Voltage - Collector Emitter Breakdown (Max)

Other Names

Typical Rise Time

Factory Pack Quantity

Fall Time

Configuration

Minimum Operating Temperature

Rise Time

Typical Fall Time

Continuous Drain Current

Rds On

Minimum DC Current Gain

Frequency - Transition

DC Current Gain (hFE) (Min) @ Ic, Vce

Maximum Drain Source Voltage

Pin Count

Transistor Polarity

Drain-Source Breakdown Voltage

Type

DC Collector/Base Gain hfe Min

Operating Temperature Range

Maximum Power Dissipation

Current - Collector (Ic) (Max)

P(tot)

Matchcode

Current - Continuous Drain (Id) @ 25° C

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) @ Vds

Gate Charge (Qg) @ Vgs

Power Dissipation Pd

Maximum Continuous Collector Current

Mounting

Vds - Drain-Source Breakdown Voltage

Mounting Style

Maximum Operating Temperature

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Packaging

Technology

Continuous Collector Current

Vce Saturation (Max) @ Ib, Ic

Collector- Base Voltage VCBO

Resistor - Emitter Base (R2) (Ohms)

Collector-Emitter Saturation Voltage

Unit Pack

MOQ

FET Feature

Transistor Case Style

Weight (kg)

td(on)

t(r)

td(off)

Gate Charge

Switching Energy

Td (on/off) @ 25°C

Reverse Recovery Time (trr)