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Fairchild Semiconductor International, Inc.

Fairchild Semiconductor International, Inc.- 红外发射器、激光二极管与光纤

飞兆半导体(仙童半导体)于1957年在美国加利福尼亚州帕洛阿尔托成立,是全球半导体行业的先驱之一。总部设在加利福尼亚州圣何塞,该公司逐步发展为领先的功率模拟、功率分立及光电元件全球供应商。其产品线涵盖功率MOSFET、IGBT、二极管、整流器、稳压器和电机控制IC等功率管理解决方案。公司以“功率特许经营®”(The Power Franchise®)品牌著称,专注于系统能效优化。核心产品系列包括PowerTrench® MOSFET、Hyperfast™二极管和智能功率模块。应用市场覆盖汽车、工业、消费电子、计算机和通信领域,尤其在节能应用中占据重要地位。在全球电子元器件市场中,飞兆半导体曾是功率分立器件领域的头部企业,拥有领先的市场份额和技术优势。通过持续投入先进材料科学与供应链创新,公司在LED照明、移动设备和汽车电子等领域推动了能效提升。2016年9月,飞兆半导体被安森美半导体(现onsemi)收购,成为其功率管理业务的重要组成部分。

02
MODELS

红外发射器、激光二极管与光纤 - 型号列表153 个型号

Viewing Angle

Part # Aliases

Intensity

Package/Case

Series

Standard Package

Factory Pack Quantity

Other Names

Package

Radiant Intensity (Ie) Min @ If

Unit Weight

Power Dissipation

Lens Dimensions

Rise Time

Maximum Light Current

Type

Product Category

Wavelength

Package / Case

Viewing Angle

Peak Wavelength

Supplier Package

Standard Package Name

Luminous Intensity

Package Height

Half Intensity Angle Degrees

Fall Time

Peak Wavelength

Beam Angle

Minimum Operating Temperature

Maximum Power Dissipation

Lum Intensity

Package Type

Maximum Rise Time

Maximum Fall Time

Maximum Collector Current

Maximum Rise Time

视角

Light Current

Pin Count

Lens Appearance

Maximum Operating Temperature

Packaging

Forward Voltage

Maximum Forward Voltage per Color

Voltage - Forward (Vf) Typ

Lens Type

Product Depth (mm)

Product Height (mm)

Product Length (mm)

Radiant Intensity

Lens Dimensions

Tariff No.

Maximum Collector Current

Half Intensity Angle Degrees

封装/外壳

Package Width

Package Length

Lens Shape Type

Mounting Orientation

Mounting

Mounting Style

Power Rating

Maximum Forward Current

Minimum Operating Temperature

Maximum Operating Temperature

LED Material

Orientation

Mounting Type

Current - DC Forward (If)

Maximum Forward Current

Operating Temp Range

Operating Temperature Classification

Forward Current

Reverse Voltage

Test Current (It)

Chip Material

PCB

Package Diameter

Lead Shape

Weight (kg)

Viewing Orientation

Polarity

Maximum Power Dissipation

Maximum Dark Current

Maximum Dark Current

Power - Max

取向

装配类型

功率 - 最大值

波长

No. of Pins

Input Current Max

Maximum Reverse Voltage

Maximum Reverse Voltage

Operating Temperature

不同 If 时的辐射强度 (Ie)(最小值)

Dark Current

Dark Current (Max)

半感光角度

高度

宽度

封装类型

检测到的最大波长

长度

Half-Intensity Angle

Collector Current (DC)

制造商零件编号价格/库存TypeStandard PackageProduct CategoryRoHSPackagingFactory Pack QuantityPin CountMaximum Operating TemperatureMinimum Operating TemperatureEU RoHSMinimum Operating Temperature Maximum Operating Temperature rohsWavelengthMaximum Power Dissipation Supplier PackageStandard Package NamePackage/CaseViewing AnglePackage / CasePeak Wavelength Lens Shape TypePackagePeak WavelengthMountingMounting TypeSeriesOrientationUnit WeightMounting StylePower DissipationPCBPackage Height Lens DimensionsRise TimeIllumination ColorPart # AliasesMaximum Forward Current Operating Temp RangePackage TypeOperating Temperature ClassificationRad HardenedLead ShapeHalf Intensity Angle DegreesPolarityFall TimeNumber of LEDsIntensityLens AppearanceMounting OrientationForward VoltagePower RatingViewing Angle Reverse Voltage Maximum Forward Voltage per Color LED MaterialHigh BrightnessCurrent - DC Forward (If)Number of ElementsMaximum Dark CurrentMaximum Light Current Maximum Fall Time Maximum Dark Current Maximum Rise Time Beam AngleVoltage - Forward (Vf) TypRadiant Intensity (Ie) Min @ IfReverse VoltagePhototransistor TypeMaximum Emitter Collector VoltageLens ColorViewing OrientationMaximum Rise TimeCollector- Emitter Voltage VCEO MaxNumber of Channels per ChipMaximum Collector Emitter Voltage Voltage - Collector Emitter Breakdown (Max)Other NamesLens ShapeMaximum Forward CurrentForward CurrentLens TypeLens Dimensions Package Diameter Cut-off FilterMaximum Power DissipationMaximum Collector Emitter Saturation Voltage Maximum Collector Current Half Intensity Angle Degrees Maximum Emitter Collector Voltage Current - Dark (Id) (Max)Power - Max视角封装/外壳波长LifeShape TypeTest Current (It)Chip MaterialMain CategoryProduct Depth (mm)Product Height (mm)Product Length (mm)Luminous IntensityDELETEDWeight (kg)Tariff No.Dark CurrentLum IntensityMaximum Collector Current取向装配类型No. of PinsInput Current MaxLeaded Process CompatibleNo. of ChannelsPackage Width Package Length Dark Current (Max)Light CurrentRadiant IntensityTransistor PolarityWavelength TypPower ConsumptionOperating Temperature MaxMaximum Reverse VoltageMaximum Reverse Voltage Operating TemperatureCollector-Emitter VoltageEmitter-Collector Voltage (Max)Half-Intensity AngleCollector-Emitter Sat Volt (max)电流 - 暗 (Id)(最大值)功率 - 最大值电压 - 集射极击穿(最大值)不同 If 时的辐射强度 (Ie)(最小值)Maximum Light CurrentMaximum Rise Time RangePhotodiode MaterialProductPhotocurrentPhotodiode TypeSpectral RangeActive AreaCurrent - Dark (Typ)Voltage - DC Reverse (Vr) (Max)Response TimeDiode Type电流 - 暗(典型值)电压 - DC 反向 (Vr)(最大值)操作温度响应时间有效面积二极管类型频谱范围检测频谱半感光角度高度安装类型宽度封装类型针数目检测到的最大波长长度Collector Current (DC)Forward Current If(AV)Fall Time tfForward Voltage VF MaxDiode Case StyleMaximum On-State Collector Current系列Current - DC Forward (If) (Max)Voltage - Forward (Vf) (Typ)Maximum Collector Emitter VoltageLead FinishOutput DeviceSlot WidthAperture WidthSensing DistanceSensing MethodGap Width Slit Width Output ConfigurationOptocoupler Output TypeInput CurrentOutput VoltageOpto Case StyleVoltage RatingReverse Breakdown Voltage峰值灵敏度的波长检测到的最小波长二极管材料Current - Collector (Ic) (Max)电流 - 集电极 (Ic)(最大值)典型上升时间频谱范围内的灵敏度典型下降时间通道数目尺寸最大暗电流集电极电流Maximum Output VoltageOperating Supply VoltageTypical Operating Supply Voltage Maximum Propagation Delay Time Minimum Operating Supply Voltage Rise Time Supply Current Power Dissipation Maximum Operating Supply Voltage Maximum Output Voltage Output Current Fall Time Output Type
QEE123
3
QEE123

LED IrLED 890nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价IrLEDBulkInfrared EmittersRoHS CompliantBulk5002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880 nm100Side LookerSide LookerRadial50 °Side Looker890Circular2Side Looker890 nmThrough HoleThrough HoleQEE123Side View0.004762 ozThrough Hole100 W----InfraredQEE123_NL100-40C to 100CSide LookerIndustrialNo----19 mW/srNon DiffusedRight Angle1.7 V100 mW5051.7GaAlAsNo50mA1-----+/- 251.7V8mW/sr @ 100mA5 V----------Circular100 mA100 mANon Diffused--------------Circular100 mAGaAlAsIrLED2.54 mm5.08 mm4.44 mm9mW/srCompliant---9mW/sr mcd---------------------------------------------------------------------------------------------------------
QED234
5
QED234

T13-4 ALGAAS-GAAS LED

fairchild semiconductor

询价IrLED250Infrared EmittersRoHS CompliantBulk2502+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant940 nm200T-1 3/4T-1 3/4Radial40 degT-1 3/4940Circular-940 nmThrough HoleThrough HoleQED234Top View0.010032 ozThrough Hole200 W28.774.95x4.95x7.75 mm:1µsInfraredQED234_NL100-40C to 100CT-1 3/4IndustrialNoThrough Hole---127mW/sr(Min)Colorless Non DiffusedTop Mount1.7 V200 mW4051.6GaAsNo100mA1-----+/- 201.6V27mW/sr @ 100mA5 V----------Circular100 mA100 mA-4.95x4.95x7.756.1(Max)------------Circular20 mAGaAsIrLED6.1 mm8.77 mm6.1 mm27mW/srCompliant0.00285411000-27mW/sr mcd-----------27 mW/sr--------------------------------------------:100mA:1µs:1.6V:T-1 3/4---------------------------------------------
QSE122
4
QSE122

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价IR ChipBulkPhototransistorsRoHS CompliantBulk5002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880nm100Side LookerSide LookerRadial50°Side Looker880Domed2Side Looker880 nm-Through Hole*Side View0.004762 oz----1.65 mm8 us-QSE122_NL------25 °NPN8 us-------------100 nA120008000(Typ)1008000(Typ)----Phototransistor5 VBlack TransparentSide View8000(Typ) ns30 V13030V-------Visible Cut-off100 mW0.415255100nA100mW50°Radial880nm--------------15 mASide ViewThrough Hole--------------------100nA100mW30V----------------------------------12 mA*-------------------------------------------
QSD123
5
QSD123

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk

fairchild semiconductor

询价IR ChipBulkPhototransistorsRoHS CompliantBulk2502+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880nm100T-1 3/4T-1 3/4T 1 3/424°T-1 3/4880Domed2T-1 3/4880 nmThrough HoleThrough Hole*Top View0.010018 oz--28.774.95 mm7 us-QSD123_NL-----Through Hole24 °NPN7 us-------------100 nA160007000(Typ)1007000(Typ)----Phototransistor5 VBlack TransparentTop View7000(Typ) ns30 V13030V------6.1(Max)Visible Cut-off100 mW0.425125100nA100mW-------------0.00285365005-----:2:100µA:Yes:1-----:NPN:880nm:100mW:100°C-----------------------------------------------------------------------------------------
QEE113E3R0
2
QEE113E3R0

SIDELOOKER GAAS LED T-R

fairchild semiconductor

询价IrLED2,000Infrared EmittersRoHS CompliantReel20002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant940 nm100Side LookerSide LookerRadial50 °Side Looker945Circular2Side Looker945 nmThrough HoleThrough HoleQEE113Side View0.004762 ozThrough Hole100 W----InfraredQEE113E3R0_NL50-40C to 100CSide LookerIndustrialNo----17.5 mW/srNon DiffusedRight Angle1.5 V100 mW5051.5GaAsNo50mA1-----+/- 251.5V3mW/sr @ 100mA5 V---------QEE113E3R0CTCircular50 mA50 mANon Diffused--------------Circular100 mAGaAsIrLED2.54 mm5.08 mm4.44 mm7.5mW/srCompliant---------------12 mW/sr--------------------------------------------------50mA1.5V-----------------------------------------
QVE11233
3
QVE11233

Photointerrupter Transmissive 3.81mm Phototransistor 4-Pin Rail

fairchild semiconductor

询价Transmissive50Optical Switches, Transmissive, Phototransistor OutputRoHS CompliantTube50485 °C-40 °CCompliant-4085Lead free / RoHS Compliant-100--PCB Mount------Through HoleThrough Hole---Through Hole100 mW411.68---QVE11233_NL50----Through Hole--------------50mA---------------30 V13030V--50 mA50 mA--------------Obsolete---------0.0006885411000--20 mA--:4:20mA:Yes:16.3512.7-------5 V5-40°C ~ 85°C---------------------------------------------30 VMatte TinPhototransistor3.81 mm2.03 mm3.81 mmTransmissive, Slotted3.812Phototransistor:Phototransistor:20mA:30V:Through Hole:5V--------------------------
QEB363ZR
3
QEB363ZR

T3-4 GAAS LED Z BEND T-R

fairchild semiconductor

询价IrLEDTape & ReelInfrared EmittersRoHS CompliantReel10002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant940 nm100T-3/4T-3/42-SMD, Z-Bend24 °T-3/4940Circular2T-3/4940 nmSurface MountSurface MountQEB363Top View0.003460 ozThrough Hole100 W23(Max)1.9x1.9x1.5 mm-Infrared-50-40C to 100CT-3/4IndustrialNo----18(Min) mW/srColorless Non DiffusedTop Mount1.6 V100 mW2451.6GaAsNo50mA1-----+/- 241.6V8mW/sr @ 100mA5 V---------QEB363ZRCTCircular50 mA50 mA-1.9x1.9x1.5---------24°2-SMD, Z-Bend940nm-Circular100 mAGaAsIrLED2.2 mm3 mm2.7 mm8mW/srCompliant---8mW/sr mcd-Top ViewSurface Mount----2.2(Max)2.7(Max)-----------------8mW/sr @ 100mA------------------------------------------------------------------------------
QEC113C6R0
QEC113C6R0

QEC113 T-R

fairchild semiconductor

询价IrLED2,000Infrared EmittersRoHS CompliantReel20002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant940 nm100T-1T-1Radial18 degT-1940Circular--Through HoleThrough Hole-Top View-Through Hole-25.66--Infrared-50----Through Hole---140mW/srColored Non DiffusedTop Mount1.5 V100 mW1851.5GaAsNo50mA------+/- 81.5V14mW/sr @ 100mA---------------2.95x2.95x4.93.94-----------Obsolete----------------------------------------------------------------------------------------------------------------------
QSB34GR
4
QSB34GR

Photodiode PIN Chip 940nm 2-Pin PLCC T/R

fairchild semiconductor

询价ChipTape & ReelPhotodiodesRoHS CompliantReel1000285 °C-25 °CCompliant-2585Lead free / RoHS Compliant940 nm150PLCCPLCC2-SMD, Gull Wing120°PLCC-2940-2PLCC940 nmSurface Mount-QSB34-0.004540 ozSMD/SMT150 mW21.2-50 ns----25C to 85CPLCCCommercialNoJ-Lead60 degForward50 ns-------------30 nA37(Typ)50(Typ)3050(Typ)---32 V---------QSB34GRCT--------------120°2-SMD, Gull Wing940nm------------30 nA--------4(Max)4.5(Max)30 nA37 uA-----32(Min) V32(Min)-25°C ~ 85°C--------37(Typ) uA15 to 250 nsSiPIN Photodiodes37 uAPIN730nm ~ 1100nm2.55mm x 2.55mm (6.5mm²)30nA32V50nsPIN30nA32V-25°C ~ 85°C50ns2.55mm x 2.55mm (6.5mm²)Pin730nm ~ 1100nm红外60 °1.2mm表面安装4mmPLCC 2L21100nm4.5mm------------------------32 V940nm730nmSi----------------------
QSB34ZR
3
QSB34ZR

Photodiode PIN Chip 940nm 2-Pin PLCC T/R

fairchild semiconductor

询价ChipTape & ReelPhotodiodesRoHS CompliantReel1000285 °C-25 °CCompliant-2585Lead free / RoHS Compliant940 nm150PLCCPLCC2-SMD, Z-Bend120°PLCC-2940-2PLCC940 nmSurface Mount-QSB34-0.004540 ozSMD/SMT150 mW21.2-50 ns-------J-Lead60 degForward50 ns-------------30 nA37(Typ)50(Typ)3050(Typ)---32 V---------QSB34ZRCT--------------120°2-SMD, Z-Bend940nm------------30 nA--------4(Max)4.5(Max)-------32(Min) V32(Min)-25°C ~ 85°C--------37(Typ) uA15 to 250 nsSiPIN Photodiodes37 uAPIN730nm ~ 1100nm2.55mm x 2.55mm (6.5mm²)30nA32V50nsPIN30nA32V-25°C ~ 85°C50ns2.55mm x 2.55mm (6.5mm²)Pin730nm ~ 1100nm-----------------------------------------------------------
QSB363ZR
4
QSB363ZR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

fairchild semiconductor

询价IR ChipTape & ReelPhototransistorsRoHS CompliantReel10002+ 85 C- 25 CCompliant-4085Lead free / RoHS Compliant940nm75T-3/4T-3/42-SMD, Z-Bend24°T-3/4940Domed2T-3/4940 nmSurface MountSurface MountQSB363Top View0.003175 oz-0.075 W--1.91 mm15 us----25C to 85CT-3/4CommercialNo-24 °NPN15 us------------1100 nA1500(Typ)15000(Typ)10015000(Typ)----Phototransistor5 VBlack TransparentTop View15000(Typ) ns30 V13030VQSB363ZRCT---Black Transparent--Visible Cut-off75 mW0.42245100nA75mW24°2-SMD, Z-Bend940nm------------100 nA-2 mATop ViewSurface Mount------100 nA1500 uA--------30 V5 V24 deg0.4 V100nA75mW30V--------------------红外12 °3mm表面安装2.2mm超微型2940nm2.7mm0.002 A---------------------------2mA2mA15µs940 nm15µs12.7 x 2.2 x 3mm100nA1.5mA-------------
QSE159E3R0
QSE159E3R0

Photodetector Optoschmitt 3-Pin Side Looker T/R

fairchild semiconductor

询价OptoschmittTape & ReelPhoto IC SensorsRoHS CompliantReel20003+ 85 C- 40 CCompliant-4085Lead free / RoHS Compliant*-Side LookerSide LookerTO-18 small----3Side Looker---*--Through Hole100 mW---100(Max) ns----------100 ns-------------------------------------------------Obsolete---------------------------------------------------------------------------------------------------------35 V4 to 16 V5|9|12|156000(Typ)4100(Max)5100163550100(Max)*
QEC313
QEC313

LED.T-1 NARW ANGLE I/R

fairchild semiconductor

询价-5,000Infrared EmittersRoHS CompliantBulk5000------Lead free / RoHS Compliant----------------Through Hole-----Infrared-----------------------------------------------------------Obsolete----------------------------------------------------------------------------------------------------------------------
QED633
QED633

T13-4 ALGAAS-GAAS LED 55 DEG

fairchild semiconductor

询价IrLED-Infrared EmittersRoHS CompliantBulk2502+ 100 C- 40 CCompliant-40100-940 nm200T-1 3/4T-1 3/4-55 degT-1 3/4940Circular--Through Hole------28.77--Infrared-100----Through Hole---125mW/srColorless Non DiffusedTop Mount1.6 V200 mW5551.6GaAsNo---------------------Circular---4.95x4.95x7.756.1(Max)-----------Obsolete------------------------25 mW/sr---------------------------------------------------------------------------------------------
QSE114
6
QSE114

Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk

fairchild semiconductor

询价IR ChipBulkPhototransistorsRoHS CompliantBulk5002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880nm100Side LookerSide LookerRadial50°Side Looker880Domed2Side Looker880 nmThrough HoleThrough Hole*Side View0.004762 oz-0.1 W--1.65 mm8 us-QSE114_NL--40C to 100CSide LookerIndustrialNo-50 °NPN8 us------------1100 nA1000(Min)8000(Typ)1008000(Typ)----Phototransistor5 VBlack TransparentSide View8000(Typ) ns30 V13030V----Black Transparent--Visible Cut-off100 mW0.45255100nA100mW-------------0.00285414090100 nA----:2:100µA:Yes:1--100 nA1000 uA-:NPN:880nm:100mW:100°C---30 V5 V50 deg0.4 V----------------------------------------------------------------------------------
QSB363YR
QSB363YR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

fairchild semiconductor

询价IR ChipTape & ReelPhototransistorsRoHS CompliantReel10002+ 85 C- 25 CCompliant-4085Lead free / RoHS Compliant940nm75T-3/4T-3/4T 3/424°T-3/4940Domed2T-3/4940 nm-Surface MountQSB363Top View0.003175 oz----1.91 mm15 us--------24 °NPN15 us-------------100 nA1500(Typ)15000(Typ)10015000(Typ)----Phototransistor5 VBlack TransparentTop View15000(Typ) ns30 V13030VQSB363YRCT------Visible Cut-off75 mW0.42245100nA75mW-----------------2 mA--------------------------------------------------------------------------------------------------------
QED223A4R0
3
QED223A4R0

LED IrLED 890nm 2-Pin T-1 3/4 T/R

fairchild semiconductor

询价IrLEDTape & ReelInfrared EmittersRoHS CompliantReel12002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880 nm200T-1 3/4T-1 3/4Radial40 °T-1 3/4890Circular2T-1 3/4890 nmThrough HoleThrough HoleQED223Top View0.010032 ozThrough Hole200 W28.774.95x4.95x7.75 mm-InfraredQED223A4R0_NL100-40C to 100CT-1 3/4IndustrialNoThrough Hole---125(Min) mW/srColored Non DiffusedTop Mount1.7 V200 mW4051.7GaAlAsNo100mA1-----+/- 201.7V25mW/sr @ 100mA5 V---------QED223A4R0CTCircular100 mA100 mAColored Non Diffused4.95x4.95x7.756.1(Max)--------40°Radial880nm-Circular100 mAGaAlAsIrLED6.1 mm8.77 mm6.1 mm25mW/srCompliant---25mW/sr mcd-Top ViewThrough Hole-----------------------25mW/sr @ 100mA------------------------------------------------------------------------------
QSC112_0056K
QSC112_0056K

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 Bulk

fairchild semiconductor

询价IR ChipBulk-------------------Domed2T-1880 nm---------2.95 mm---------8 °NPN-----------------------Phototransistor5 VBlack TransparentTop View5000(Typ) ns---------------------------------------------------------------------------------------------------------------------------------------------
QSD124
5
QSD124

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk

fairchild semiconductor

询价IR ChipBulkPhototransistorsRoHS CompliantBulk2502+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880nm100T-1 3/4T-1 3/4T 1 3/424°T-1 3/4880Domed2T-1 3/4880 nmThrough HoleThrough Hole*Top View0.010018 oz-0.1 W28.774.95 mm7 us-QSD124_NL--40C to 100CT-1 3/4IndustrialNoThrough Hole24 °NPN7 us------------1100 nA6000(Min)7000(Typ)1007000(Typ)----Phototransistor5 VBlack TransparentTop View7000(Typ) ns30 V13030V----Black Transparent-6.1(Max)Visible Cut-off100 mW0.425125100nA100mW-------------0.00285411000100 nA----:2:100µA:Yes:1--100 nA6000 uA-:NPN:880nm:100mW:100°C---30 V5 V24 deg0.4 V--------------------------------0.025 A-------------------------------------------------
QEB373YR
QEB373YR

T3-4 ALGAAS LED YOKE T-R

fairchild semiconductor

询价IrLED1,000Infrared EmittersRoHS CompliantReel10002+ 100 C- 40 CCompliant-40100Lead free / RoHS Compliant880 nm100T-3/4T-3/42-SMD, Yoke Bend12 degT-3/4875Circular---Surface Mount-Top View-Through Hole-----Infrared-50--------116mW/sr(Min)Non DiffusedTop Mount1.7 V100 mW2451.7GaAlAsNo50mA------+/- 241.7V16mW/sr @ 100mA---------------1.9x1.9x1.5------------Obsolete----------------------------------------------------------------------------------------------------------------------
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