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制造商
Fairchild Semiconductor International, Inc.
绝缘栅双极型晶体管和功率驱动器

Fairchild Semiconductor International, Inc.- 绝缘栅双极型晶体管和功率驱动器

飞兆半导体（仙童半导体）于1957年在美国加利福尼亚州帕洛阿尔托成立，是全球半导体行业的先驱之一。总部设在加利福尼亚州圣何塞，该公司逐步发展为领先的功率模拟、功率分立及光电元件全球供应商。其产品线涵盖功率MOSFET、IGBT、二极管、整流器、稳压器和电机控制IC等功率管理解决方案。公司以“功率特许经营®”（The Power Franchise®）品牌著称，专注于系统能效优化。核心产品系列包括PowerTrench® MOSFET、Hyperfast™二极管和智能功率模块。应用市场覆盖汽车、工业、消费电子、计算机和通信领域，尤其在节能应用中占据重要地位。在全球电子元器件市场中，飞兆半导体曾是功率分立器件领域的头部企业，拥有领先的市场份额和技术优势。通过持续投入先进材料科学与供应链创新，公司在LED照明、移动设备和汽车电子等领域推动了能效提升。2016年9月，飞兆半导体被安森美半导体（现onsemi）收购，成为其功率管理业务的重要组成部分。

MODELS

绝缘栅双极型晶体管和功率驱动器 - 型号列表共 98 个型号

制造商零件编号	价格/库存	Package	Configuration	Mounting	Standard Package	Packaging	Package / Case	rohs	Supplier Package	EU RoHS	Pin Count	Mounting Type	Maximum Collector Emitter Voltage	Maximum Continuous Collector Current	Maximum Operating Temperature	Minimum Operating Temperature	Power Dissipation Pd	Operating Temperature Min	No. of Pins	Weight (kg)	Tariff No.	Maximum Gate Emitter Voltage	Channel Type	Gate Charge	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Power - Max	Input Type	Factory Pack Quantity	Mounting Style	Minimum Operating Temperature	Maximum Operating Temperature	RoHS	DC Collector Current	Collector Emitter Voltage Vces	Collector Emitter Voltage V(br)ceo	Operating Temperature Max	Transistor Case Style	SVHC	Operating Temperature Range	Maximum Gate Emitter Voltage	Maximum Continuous Collector Current	Standard Package Name	Maximum Collector Emitter Voltage	Maximum Power Dissipation	Switching Energy	Current - Collector Pulsed (Icm)	Product Category	Series	Package Type	Transistor Type	Lead Shape	Unit Weight	Operating Temperature (Max)	Operating Temperature (Min)	Rad Hardened	Collector- Emitter Voltage VCEO Max	MSL	Collector-Emitter Saturation Voltage	Continuous Collector Current Ic Max	Continuous Collector Current at 25 C	Power Dissipation	Collector-Emitter Voltage	Operating Temperature Classification	Gate to Emitter Voltage (Max)	Collector Current (DC)	Power Dissipation Max	Transistor Polarity	Gate-Emitter Leakage Current	Test Condition	Part # Aliases	Current Ic Continuous a Max	Voltage Vces	Termination Type	Height	Length	Collector Current (DC) (Max)	Dimensions	Width	Package Width	Package Height	PCB	Package Length	Reverse Recovery Time (trr)	Tab	Pulsed Current Icm	Rise Time	IGBT Type	Operating Temperature	Current Temperature	Fall Time tf	Full Power Rating Temperature	No. of Transistors	Other Names	Device Marking	Pin Format	Power Dissipation Ptot Max	Case	Transistor type	Power	Collector-emitter voltage	Multiplicity	Collector current	Gross weight	Collective package [pcs]	spg	Voltage - Isolation	Current	Voltage	Type	IPM Power Device	Voltage Rating (Vces / Vdss)	Current Rating (Ic / Id)	Isolation Voltage	IPM Mounting Type	Brand	Alternate Case Style	Fall Time Typ	Product	Maximum Power Dissipation	IPM Case Style	IPM Series	Operating Supply Voltage	Case Length	Screening Level	Technology	Pd - Power Dissipation	Continuous Collector Current	Current Ic @ Vce Sat	Fall Time Max	输入类型	不同 Vge、Ic 时的 Vce(on)	Td (on/off) A 25°C	封装/外壳	闸极电荷	功率 - 最大值	电流 - 集电极 (Ic)（最大值）	电压 - 集射极击穿（最大值）	Gate-emitter voltage	Turn-on time	Turn-off time	Pulsed collector current	Maximum Output Current	Number of Outputs	Output Current	Load Voltage	Output Voltage	Supply Current	Continuous Drain Current Id	Current Id Max	Drain Source Voltage Vds	Driver Case Style	Input Voltage	Junction Temperature Tj Max	Junction Temperature Tj Min	No. of Outputs	On Resistance Rds(on)	Pulse Current Idm	Storage Temperature Max	Storage Temperature Min	Supply Voltage Max	Supply Voltage Min	Supply Voltage Range	Voltage Regulator Case Style	Switching Speed	Case Height	DELETED
5 HGTG11N120CND Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	1200 V	43 A	150	-55	:298W	:-55°C	:3	0.0001	85412100	±20 V	N	100nC	43A	23ns/180ns	2.4V @ 15V, 11A	1200V	TO-247	298W	Standard	150	Through Hole	- 55 C	+ 150 C	RoHS Compliant By Exemption	:43A	:2.4V	:1.2kV	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	43	TO-247	1200	298000	950µJ (on), 1.3mJ (off)	80A	IGBT Transistors	HGTG11	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-55C	No	1200 V	:-	2.1 V	43 A	43 A	298 W	1200 V	Military	�20 V	43 A	:298W	:N Channel	+/- 250 nA	960V, 11A, 10 Ohm, 15V	HGTG11N120CND_NL	:43A	:1.2kV	:SMD	-	-	43 A	-	-	-	-	-	-	32ns	-	-	-	NPT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 HGTD1N120BNS9A Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R fairchild semiconductor	询价	3DPAK	Single	Surface Mount	Tape & Reel	Tape and Reel	TO-252-3, DPak (2 Leads + Tab), SC-63	Lead free / RoHS Compliant	DPAK	Compliant	3	Surface Mount	1200 V	5.3 A	150	-55	-	-	-	-	-	±20 V	N	14nC	5.3A	15ns/67ns	2.9V @ 15V, 1A	1200V	TO-252AA	60W	Standard	2500	SMD/SMT	- 55 C	+ 150 C	RoHS Compliant By Exemption	-	-	-	-	-	-	-	±20	5.3	DPAK	1200	60000	70µJ (on), 90µJ (off)	6A	IGBT Transistors	HGTD1N120BNS	-	-	Gull-wing	0.009184 oz	-	-	-	1200 V	-	2.5 V	5.3 A	5.3 A	60 W	-	-	-	-	-	-	+/- 250 nA	960V, 1A, 82 Ohm, 15V	-	-	-	-	2.3 mm	6.6 mm	-	-	-	-	-	-	-	-	-	-	-	NPT	-	-	-	-	-	HGTD1N120BNS9ACT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Fairchild Semiconductor	-	-	-	-	-	-	-	-	-	Si	60 W	5.3 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 HGTP7N60C3D Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail fairchild semiconductor	询价	3TO-220AB	Single	Through Hole	Rail / Tube	Rail	TO-220-3	Lead free / RoHS Compliant	TO-220AB	Compliant	3	Through Hole	600 V	14 A	150	-40	:60W	:-40°C	:3	0.00204	85412900	±20 V	N	23nC	14A	8.5ns/350ns	2V @ 15V, 7A	600V	TO-220AB	60W	Standard	-	-	-40 °C	+150 °C	-	:14A	:1.6V	:600V	:150°C	:TO-220AB	:No SVHC (20-Jun-2013)	:-40°C to +150°C	±20	14	TO-220	600	60000	165µJ (on), 600µJ (off)	56A	-	-	TO-220AB	:IGBT	Through Hole	-	150C	-40C	No	-	:-	-	-	-	-	600 V	Automotive	�20 V	14 A	-	-	-	-	-	-	-	-	9.02mm	10.28mm	14 A	10.28 x 4.57 x 9.02mm	4.57mm	4.83(Max)	9.4(Max)	3	10.67(Max)	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 HGTG12N60C3D Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	24 A	150	-40	:104W	:-40°C	:3	0.2	85412900	±20 V	N	48nC	24A	14ns/270ns	2.2V @ 15V, 15A	600V	TO-247	104W	Standard	150	Through Hole	-40 °C	+150 °C	RoHS Compliant By Exemption	:24A	:2V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-40°C to +150°C	±20	24	TO-247	600	104000	380µJ (on), 900µJ (off)	96A	IGBT Transistors	HGTG12	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-40C	No	600 V	:-	1.65 V	24 A	24 A	104 W	600 V	Automotive	�20 V	24 A	:104W	:N Channel	+/- 100 nA	-	HGTG12N60C3D_NL	:24A	:600V	:Through Hole	20.82mm	15.87mm	24 A	15.87 x 4.82 x 20.82mm	4.82mm	-	-	-	-	30ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 HGTG18N120BND Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	1200 V	54 A	150	-55	:390W	:-55°C	:3	0.00546	85423990	±20 V	N	165nC	54A	23ns/170ns	2.7V @ 15V, 18A	1200V	TO-247	390W	Standard	150	Through Hole	- 55 C	+ 150 C	RoHS Compliant	:54A	:2.7V	:1.2kV	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	54	TO-247	1200	390000	1.9mJ (on), 1.8mJ (off)	160A	IGBT Transistors	HGTG18N120BND	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-55C	No	1200 V	:-	2.45 V	54 A	54 A	390 W	1200 V	Military	�20 V	54 A	:390W	:N Channel	+/- 250 nA	960V, 18A, 3 Ohm, 15V	HGTG18N120BND_NL	:54A	:1.2kV	:Through Hole	-	-	54 A	-	-	4.82	20.82(Max)	3	15.87(Max)	44ns	Tab	:160A	:22ns	NPT	-	-	-	-	-	-	:HGTG18N120BND	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:SOT-249	:90ns	-	-	-	-	-	-	-	-	-	-	:18A	:140ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 ISL9V3036S3ST Trans IGBT Chip N-CH 350V 21A 3-Pin(2+Tab) D2PAK T/R fairchild semiconductor	询价	3D2PAK	Single	Surface Mount	Tape & Reel	Reel	TO-263AB	Lead free / RoHS Compliant	D2PAK	Compliant	3	Surface Mount	350 V	21 A	175	-40	-	-	-	-	-	±10 V	N	17nC	21A	-/4.8µs	1.6V @ 4V, 6A	360V	TO-263AB	150W	Logic	800	SMD/SMT	- 40 C	+ 175 C	RoHS Compliant	-	-	-	-	-	-	- 40 C to + 175 C	±10	21	D2PAK	350	150000	-	-	Motor / Motion / Ignition Controllers & Drivers	ISL9V3036S3S	-	-	Gull-wing	0.046296 oz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	300V, 1 kOhm, 5V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	- 40 C to + 175 C	-	-	-	-	ISL9V3036S3STCT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Fairchild Semiconductor	-	-	Electronic Ignition Drivers	-	-	-	-	-	-	-	-	-	-	-	Logic	1.6V @ 4V, 6A	-/4.8µs	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	17nC	150W	21A	360V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 HGTP20N60A4 Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-220AB Rail fairchild semiconductor	询价	3TO-220AB	Single	Through Hole	Rail / Tube	Rail	TO-220-3	Lead free / RoHS Compliant	TO-220AB	Compliant	3	Through Hole	600 V	70 A	150	-55	:290W	:-55°C	:3	0.002033	85423990	±20 V	N	142nC	70A	15ns/73ns	2.7V @ 15V, 20A	600V	TO-220AB	290W	Standard	-	-	-	-	-	:70A	:2.7V	:600V	:150°C	:TO-220AB	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	70	TO-220	600	290000	105µJ (on), 150µJ (off)	280A	-	-	TO-220AB	:IGBT	Through Hole	-	150C	-55C	No	-	:-	-	-	-	-	600 V	Military	�20 V	70 A	:290W	:N Channel	-	390V, 20A, 3 Ohm, 15V	-	:70A	:600V	:Through Hole	-	-	70 A	-	-	4.83(Max)	9.4(Max)	3	10.67(Max)	-	Tab	:280A	:12ns	-	-	:25°C	:32ns	:25°C	:1	-	-	:GCE	:290W	TO220	IGBT	290W	600V	1	70A	3.02 g	100	100	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 HGTP7N60A4 Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-220AB Rail fairchild semiconductor	询价	3TO-220AB	Single	Through Hole	Rail / Tube	Tube	TO-220AB-3	Lead free / RoHS Compliant	TO-220AB	Compliant	3	Through Hole	600 V	34 A	150	-55	:125W	:-55°C	:3	0.002033	85423990	±20 V	N	37nC	34A	11ns/100ns	2.7V @ 15V, 7A	600V	TO-220AB	125W	Standard	400	Through Hole	- 55 C	+ 150 C	RoHS Compliant	:34A	:2.7V	:600V	:150°C	:TO-220AB	:No SVHC (16-Dec-2013)	:-55°C to +150°C	±20	34	TO-220	600	125000	55µJ (on), 60µJ (off)	56A	IGBT Transistors	-	TO-220AB	:IGBT	Through Hole	-	150C	-55C	No	600 V	:-	1.9 V	34 A	34 A	125 W	600 V	Military	�20 V	34 A	:125W	:N Channel	+/- 250 nA	390V, 7A, 25 Ohm, 15V	HGTP7N60A4_NL	:34A	:600V	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	:56A	:11ns	-	-	:25°C	:45ns	:25°C	:1	-	-	:GCE	:125W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 HGTG20N60A4 Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	70 A	150	-55	:290W	:-55°C	:3	0.00546	85416000	±20 V	N	142nC	70A	15ns/73ns	2.7V @ 15V, 20A	600V	TO-247	290W	Standard	30	Through Hole	-55 °C	+150 °C	RoHS Compliant	:70A	:2.7V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	70	TO-247	600	290000	105µJ (on), 150µJ (off)	280A	IGBT Transistors	HGTG20N60A4	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-55C	No	600 V	:-	1.8 V	70 A	70 A	290 W	600 V	Military	�20 V	70 A	:290W	:N Channel	+/- 250 nA	390V, 20A, 3 Ohm, 15V	HGTG20N60A4_NL	:70A	:600V	:Through Hole	20.82mm	15.87mm	-	15.87 x 4.82 x 20.82mm	4.82mm	4.82	20.82(Max)	3	15.87(Max)	-	Tab	:280A	:12ns	-	-	:25°C	:32ns	:25°C	:1	-	:HGTG20N60A4	:GCE	:290W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:SOT-249	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 HGTG30N60B3 Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	60 A	150	-55	:208W	:-55°C	:3	0.2	85412900	±20 V	N	170nC	60A	36ns/137ns	1.9V @ 15V, 30A	600V	TO-247	208W	Standard	150	Through Hole	- 55 C	+ 150 C	RoHS Compliant By Exemption	:60A	:1.45V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	60	TO-247	600	208000	500µJ (on), 680µJ (off)	220A	IGBT Transistors	HGTG30N60B3	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-55C	No	600 V	:-	1.45 V	60 A	60 A	208 W	600 V	Military	�20 V	60 A	:208W	:N Channel	+/- 250 nA	-	HGTG30N60B3_NL	:60A	:1.45V	:Through Hole	-	-	-	-	-	4.82	20.82	3	15.87	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 FGH60N60SFTU Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247AB Tube fairchild semiconductor	询价	3TO-247AB	Single	Through Hole	Rail / Tube	Tube	TO-247-3	Lead free / RoHS Compliant	TO-247AB	Compliant	3	Through Hole	600 V	120 A	150	-55	:378W	:-55°C	:3	0.00542	85412900	±20 V	N	198nC	120A	22ns/134ns	2.9V @ 15V, 60A	600V	TO-247	378W	Standard	150	Through Hole	-55 °C	+150 °C	RoHS Compliant	:120A	:600V	:600V	:150°C	:TO-247AB	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	120	-	600	378000	1.79mJ (on), 670µJ (off)	180A	IGBT Transistors	FGH60N60SF	TO-247	:IGBT	-	0.225401 oz	150C	-55C	No	600 V	:-	-	120 A	-	-	600 V	Military	�20 V	120 A	-	-	-	400V, 60A, 5 Ohm, 15V	-	-	-	-	20.6mm	15.6mm	120 A	15.6 x 4.7 x 20.6mm	4.7mm	-	-	-	-	-	-	-	-	Field Stop	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	378 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 HGTG40N60B3 Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	70 A	150	-55	:290W	:-55°C	:3	0.21	85411000	±20 V	N	250nC	70A	47ns/170ns	2V @ 15V, 40A	600V	TO-247	290W	Standard	150	Through Hole	-55 °C	+150 °C	RoHS Compliant By Exemption	:70A	:2V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	70	TO-247	600	290000	1050µJ (on), 800µJ (off)	330A	IGBT Transistors	HGTG40	TO-247	:IGBT	Through Hole	-	150C	-55C	No	600 V	:-	1.4 V	70 A	70 A	290 W	600 V	Military	�20 V	70 A	:290W	:N Channel	+/- 100 nA	-	HGTG40N60B3_NL	:70A	:600V	:Through Hole	20.82mm	15.87mm	70 A	15.87 x 4.82 x 20.82mm	4.82mm	4.82	20.82	3	15.87	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 HGTG27N120BN Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	1200 V	72 A	150	-55	:500W	:-55°C	:3	0.2	85411000	±20 V	N	270nC	72A	24Ns/195ns	2.7V @ 15V, 27A	1200V	TO-247	500W	Standard	-	-	-	-	-	:72A	:2.7V	:1.2kV	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	72	TO-247	1200	500000	2.2mJ (on), 2.3mJ (off)	216A	-	-	TO-247	:IGBT	Through Hole	-	150C	-55C	No	-	:-	-	-	-	-	1200 V	Military	�20 V	72 A	:500W	:N Channel	-	960V, 27A, 3 Ohm, 15V	-	:72A	:1.2kV	:Through Hole	-	-	72 A	-	-	-	-	-	-	-	-	-	-	NPT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SGL50N60RUFDTU Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-264 Rail fairchild semiconductor	询价	3TO-264	Single	Through Hole	Rail / Tube	Tube	TO-264-3, TO-264AA	Lead free / RoHS Compliant	-	-	-	Through Hole	600 V	80 A	-	-	:250W	:-55°C	:3	0	85412900	±20 V	-	145nC	80A	26ns/66ns	2.8V @ 15V, 50A	600V	TO-264	250W	Standard	25	Through Hole	- 55 C	+ 150 C	RoHS Compliant	:80A	:2.5V	:600V	-	-	-	-	-	-	-	-	-	2.71mJ	150A	IGBT Transistors	SGL50N60RUFD	-	:IGBT	-	0.238311 oz	-	-	-	600 V	-	2.2 V	80 A	80 A	250 W	-	-	-	-	-	-	250 W	300V, 50A, 5.9 Ohm, 15V	SGL50N60RUFDTU_NL	-	-	-	-	-	-	-	-	-	-	-	-	70ns	-	-	-	-	-	-	-	-	-	-	-	-	-	TO264	IGBT	250W	600V	1	80A	0.01 kg	25	25	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 FSAM10SH60A 10A, SMART POWER MODULE (SPM) fairchild semiconductor	询价	32SPM32-AA	3 Phase	Through Hole	Rail / Tube	Rail	SPM32AA	Lead free / RoHS Compliant	SPM32-AA	Compliant	32	-	-	-	125	-20	:43W	:-20°C	:32	0.035	85423990	-	-	-	-	-	-	-	-	-	-	8	SMD/SMT	-	-	RoHS Compliant By Exemption	:10A	:2.5V	:600V	:125°C	:SPM32-AA	:No SVHC (20-Jun-2013)	:-20°C to +125°C	-	-	-	-	-	-	-	IGBT Transistors	FSAM	-	-	-	1.149226 oz	-	-	-	600 V	-	2.5 V	-	10 A	43 W	-	-	-	-	:43W	:N Channel	-	-	-	:10A	:600V	-	-	-	-	-	-	31	7.2	32	60	-	-	:20A	:270ns	-	-20 to 125 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2500Vrms	10A	600V	IGBT	:IGBT	:600V	:10A	:2500Vrms	:PCB	-	-	-	-	-	:SPM32-AA	:SPM2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 HGTG30N60C3D Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	63 A	150	-40	:208W	:-40°C	:3	0.005	85412900	±20 V	N	162nC	63A	40ns/320ns	1.8V @ 15V, 30A	600V	TO-247	208W	Standard	150	Through Hole	-40 °C	+150 °C	RoHS Compliant	:63A	:1.8V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-40°C to +150°C	±20	63	TO-247	600	208000	1050µJ (on), 2500µJ (off)	252A	IGBT Transistors	HGTG30	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-40C	No	600 V	:-	1.5 V	63 A	63 A	208 W	600 V	Automotive	�20 V	63 A	:208W	-	+/- 100 nA	-	HGTG30N60C3D_NL	-	-	-	20.82mm	15.87mm	63 A	15.87 x 4.82 x 20.82mm	4.82mm	-	-	-	-	42ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 HGTG20N60A4D Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	70 A	150	-55	:290W	:-55°C	:3	0.006	85412900	±20 V	N	142nC	70A	15ns/73ns	2.7V @ 15V, 20A	600V	TO-247	290W	Standard	150	Through Hole	-55 °C	+150 °C	RoHS Compliant By Exemption	:70A	:2.7V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	70	TO-247	600	290000	105µJ (on), 150µJ (off)	280A	IGBT Transistors	HGTG20	TO-247	:IGBT	Through Hole	0.225401 oz	-	-	-	600 V	:-	1.8 V	70 A	70 A	290 W	-	-	-	-	:290W	:N Channel	+/- 250 nA	390V, 20A, 3 Ohm, 15V	HGTG20N60A4D_NL	:70A	:600V	:Through Hole	20.82mm	15.87mm	-	15.87 x 4.82 x 20.82mm	4.82mm	-	-	-	-	26ns	-	:280A	:12ns	-	-	:25°C	:32ns	:25°C	:1	-	:HGTG20N60A4D	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:32ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 HGTG30N60B3D Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail fairchild semiconductor	询价	3TO-247	Single	Through Hole	Rail / Tube	Rail	TO-247-3	Lead free / RoHS Compliant	TO-247	Compliant	3	Through Hole	600 V	60 A	150	-55	:208W	:-55°C	:3	0.005	85412900	±20 V	N	170nC	60A	36ns/137ns	1.9V @ 15V, 30A	600V	TO-247	208W	Standard	150	Through Hole	- 55 C	+ 150 C	RoHS Compliant	:60A	:1.9V	:600V	:150°C	:TO-247	:No SVHC (20-Jun-2013)	:-55°C to +150°C	±20	60	TO-247	600	208000	550µJ (on), 680µJ (off)	220A	-	HGTG30	TO-247	:IGBT	Through Hole	0.225401 oz	150C	-55C	No	600 V	:-	1.45 V	60 A	60 A	208 W	600 V	Military	�20 V	60 A	:208W	-	+/- 250 nA	-	HGTG30N60B3D_NL	-	-	-	-	-	-	-	-	-	-	-	-	32ns	-	-	-	-	-	-	-	-	-	-	-	-	-	TO247	IGBT	208W	600V	1	60A	7.24 g	300	300	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.45V	25ns	90ns	220A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 FSB50450S 500V, 3.0 A , SMART POWER MODULE fairchild semiconductor	询价	23SPM23-BA	3 Phase	Surface Mount	Tape & Reel	Reel	SPM23BA	Lead free / RoHS Compliant	SPM23-BA	Compliant	23	Surface Mount	-	-	-	-	:10W	:-20°C	:23	0.005	85412900	-	-	-	-	-	-	-	-	-	-	450	SMD/SMT	-20 °C	+125 °C	RoHS Compliant	-	-	-	:150°C	:SPM23-BA	:No SVHC (16-Dec-2013)	:-20°C to +150°C	-	-	-	-	-	-	-	Motor / Motion / Ignition Controllers & Drivers	FSB50450S	SPM23 BA	:MOSFET	-	0.142860 oz	125C	-20C	No	-	-	-	-	-	-	-	-	-	-	-	:N Channel	-	-	-	-	-	-	3.05mm	29mm	-	29 x 12 x 3.05mm	12mm	-	-	-	-	-	-	-	-	-	-20 to 125 °C	-	-	-	-	FSB50450STR	-	-	-	-	-	-	-	-	-	-	-	-	1500Vrms	1.5A	500V	FET	:MOSFET	:500V	:3A	:1500Vrms	:PCB	-	-	-	Fan / Motor Controllers / Drivers	-	:SPM23-BA	:SPM5	13.5 V to 16.5 V	29 mm	Commercial	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3A	3	1.5 A	300 V	300 V	160 uA	:1.5A	:1.5A	:500V	:SPM23BA	:500V	:150°C	:-20°C	:3	:2.4ohm	:3A	:150°C	:-50°C	:16.5V	:13.5V	:13.5V to 16.5V	:SMD	-	-	-
6 FSBB30CH60C Smart Power Module 27-Pin SPM27-EC Rail fairchild semiconductor	询价	27SPM27-EC	3 Phase	Through Hole	Rail / Tube	Rail	SPM27CC	Lead free / RoHS Compliant	SPM27-EC	Compliant	27	Through Hole	600 V	30 A	150	-40	:106W	:-40°C	:27	0.01	85423990	-	N	-	-	-	-	-	-	-	-	10	Through Hole	-40 °C	+150 °C	RoHS Compliant	:30A	:2V	:600V	:150°C	:SPMEC-027	:No SVHC (16-Dec-2013)	-	-	-	SPM27-EC	-	-	-	-	Motor / Motion / Ignition Controllers & Drivers	FSBB30CH60C	SPM27 EC	-	-	0.775251 oz	150C	-40C	No	-	-	-	-	-	-	-	-	-	-	-	:Six NPN	-	-	-	-	-	-	5.5mm	44mm	-	44 x 26.8 x 5.5mm	26.8mm	26.8	5.5	27	44	-	-	-	-	-	-40 to 150 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2500Vrms	30A	600V	IGBT	:IGBT	:600V	:30A	:2.5kV	:PCB	-	-	-	-	106 W	-	-	13.5 V to 16.5 V	44 mm	Automotive	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20kHz	5.5 mm	Compliant

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Fairchild Semiconductor International, Inc.- 绝缘栅双极型晶体管和功率驱动器

绝缘栅双极型晶体管和功率驱动器 - 型号列表共 98 个型号

Series

Maximum Continuous Collector Current

Gate Charge

Switching Energy

Td (on/off) @ 25°C

Vce(on) (Max) @ Vge, Ic

Current - Collector (Ic) (Max)

DC Collector Current

Power Dissipation Pd

Maximum Continuous Collector Current

Current - Collector Pulsed (Icm)

Weight (kg)

Power - Max

Part # Aliases

Maximum Power Dissipation

Collector-Emitter Saturation Voltage

Continuous Collector Current Ic Max

Continuous Collector Current at 25 C

Collector Current (DC)

Package

Package / Case

Test Condition

Factory Pack Quantity

Power Dissipation

Collector Emitter Voltage Vces

Supplier Package

Collector Current (DC) (Max)

Current Ic Continuous a Max

Power Dissipation Max

Unit Weight

Reverse Recovery Time (trr)

Transistor Case Style

Height

Length

Standard Package Name

Supplier Device Package

Minimum Operating Temperature

Operating Temperature Range

Tariff No.

Package Height

Package Length

Dimensions

Width

Packaging

Pin Count

Maximum Operating Temperature

Package Type

No. of Pins

Package Width

Pulsed Current Icm

Rise Time

Maximum Collector Emitter Voltage

Maximum Operating Temperature

Maximum Collector Emitter Voltage

Minimum Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

Gate-Emitter Leakage Current

Operating Temperature (Min)

Operating Temperature Min

Voltage Vces

Other Names

PCB

Device Marking

Operating Temperature

Case

Power

Collector current

Gross weight

Collective package [pcs]

spg

Current

Current Rating (Ic / Id)

Isolation Voltage

Configuration

Maximum Gate Emitter Voltage

Mounting

Standard Package

Maximum Gate Emitter Voltage