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Excelitas Technologies Corp.

Excelitas Technologies Corp.- 硬件/配件

埃赛力达科技公司是一家全球领先的光电子技术企业,为高性能应用提供创新解决方案。公司成立于2010年,从珀金埃尔默的照明与探测业务剥离而来,随后通过多次收购实现增长。总部位于美国宾夕法尼亚州匹兹堡,业务遍及北美、欧洲和亚洲。公司的核心业务领域涵盖传感、探测、成像和照明技术。重点产品系列包括高灵敏度传感器,如雪崩光电二极管和光电倍增管,定制固态照明模块,脉冲氙灯和LED光源,以及先进激光器。Excelitas服务于医疗诊断、工业自动化、国防和航空航天等多元市场。公司以X-Cite荧光照明系统和OmniCure UV LED固化系统闻名。在电子元器件领域,Excelitas专注于为关键任务应用提供传感器和发射器组件。其NimBLE单光子探测模块在量子与激光雷达系统中处于市场领先地位。凭借强大的知识产权组合和全球制造布局,Excelitas在高端光电子元器件市场占据重要地位。

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硬件/配件 - 型号列表

139 个型号

电阻

有效面积

暗电流 Id(最大)

短路电流

电容

暗电流(典型值)

重量

冷却的封装

光谱范围

海关税号

二极管配置

工作温度

开路电压

感应角度

响应类型

波长

灵敏度

峰值波长

击穿电压

额定功率

底座类型

引脚数

传感器类型

系列

制造商零件编号库存价格工作温度重量海关税号引脚数峰值波长二极管配置暗电流(典型值)电阻有效面积暗电流 Id(最大)光谱范围冷却的封装电容击穿电压开路电压短路电流主要材料感应角度灵敏度响应类型波长传感器类型安装类型包装数量RoHSSPG单元数量测试温度额定功率额定电压底座类型直流反向电压(Vr)(最大)基极电阻(R1)系列步进角有铅工艺兼容SVHC深度宽度长度二极管类型电流 - UL视角晶体管类型供电电压平均正向功率上升时间(典型)上升/下降时间(典型)间隙尺寸/外形外径引线长度结工作温度包装方式电阻材料
VTB-1013BH

DIODE, PHOTO, 580NM, 35°, TO-46-2

EXCELITAS TECH

591: ¥163.08:-40°C0.0002390318038:2:580nm:TO-46:20pA----------:35°-------------------------------------
VTB1113H
2

DIODE, PHOTO, 920NM, 15°, TO-46-2 SILICON PHOTODIODES Photodiode; 920nm; 320-1100nm; Mounting: THT; 30nA

EXCELITAS TECH

21911: ¥26.86:-40°C0.00285411000:2:920nm:TO-46:20pA7 Gigaohms0.0025 sq.in.20 pA320 to 1100 nmTO-460.31 nF40 V490 mV60 μAPhoto:15°0.19 A/W±15 °320-1100nmphotodiodeTHT1000RoHS Compliant Part10001----------------------------
VTB5041BH

DIODE, PHOTO, 580NM, 45°, TO-5-2

EXCELITAS TECH

141: ¥235.56:-40°C085411000:2:580nm:TO-5:100pA----------:45°-------------------------------------
VTB5051BH
2

DIODE, PHOTO, 580NM, 50°, TO-5-2 SILICON PHOTODIODES

EXCELITAS TECH

571: ¥380.52:-40°C0.0011390318038:2:580nm:TO-5:250pA0.56 Gigaohms0.023 sq.in.250 pA330 to 720 nmTO-53 nF40 V420 mV13 μAPhoto:50°-±50 °----RoHS Compliant Part------------------------------
VTB5051H
2

DIODE, PHOTO, 920NM, 50°, TO-5-2 Photodiode; 920nm; 320-1100nm; Mounting: THT; 85nA

EXCELITAS TECH

101: ¥80.0872:-40°C0.0011385414090:2:920nm:TO-5:250pA-14.8mm285nA-------:50°--320-1100nmphotodiodeTHT1000-------------------------------
VTB5051JH
2

DIODE, PHOTO, 920NM, 50°, TO-5-3 Photodiode; 920nm; 320-1100nm; Mounting: THT; 85nA

EXCELITAS TECH

9791: ¥199.32:-40°C0.00285414090:3:920nm:TO-5:250pA-14.8mm285nA-------:50°--320-1100nmphotodiodeTHT1000-10001----------------------------
VTB5051UVJH
2

PHOTO DIODE SILICON PHOTODIODES

EXCELITAS TECH

1351: ¥195.704:-40°C to +110°C085414090:3:920nm:TO-5:250pA0.56 Gigaohms0.023 sq.in.250 pA200 to 1100 nmTO-53 nF40 V490 mV130 μAPhoto-0.1 A/W±50 °----RoHS Compliant Part--:Yes------:50°:Yes-------------------
VTB6061H

SILICON PHOTODIODES

EXCELITAS TECH

971: ¥171.768-40 to +110 °C------0.1 Gigaohms0.058 sq.in.2 pA320 to 1100 nmTO-88 nF40 V490 mV350 μAPhoto-0.1 A/W±55 °-----------------------------------
VTB8440BH
2

PHOTODIODE, IR FILTERED Excelitas Technologies 可见光 硅 光电二极管, 通孔安装, 陶瓷 封装

EXCELITAS TECH

20061: ¥27.18:-20°C0.0000285414090:2:580nm:Planar:2nA-:5.16mm²-:720nm--:40V---:50°-------------:40V----:No SVHC (20-Jun-2013):1.8mm:8mm:6mm:Photodiode--------------
VTB8441BH.
3

OPTO-SENSOR, PHOTODETECTOR SILICON PHOTODIODES Photodiode; 580nm; 330-720nm; Mounting: THT; 4nA

EXCELITAS TECH

8611: ¥29.988:-20°C0.000190318038:2:580nm:Planar:100pA1.4 Gigaohms0.008 sq.in.100 pA330 to 720 nmCase 21F1 nF:40V420 mV5 μAPhoto:50°-±50 °330-720nmphotodiodeTHT1000RoHS Compliant Part10001----:40V-----------------------
VTP100H
2

DIODE, PHOTO, 925NM, 70°, SIDE LOOKING SILICON PHOTODIODES Photodiode; 925nm; 725-1150nm; Mounting: THT; 30nA

EXCELITAS TECH

101: ¥18.3926:-40°C0.0002385411000:2:925nm:-:30nA0.25 Gigaohms0.012 sq.in.30 nA725 to 1150 nmCase 52 Flat Sidelooker50 pF140 V300 mV55 μAPhoto:70°0.5 A/W±70 °725-1150nmphotodiodeTHT1000RoHS Compliant Part10001----------------------------
VTP1188SH

SILICON PHOTODIODES Photodiode; 925nm; 400-1100nm; Mounting: THT; 30nA

EXCELITAS TECH

3011: ¥19.448-20 to +75 °C0.38 g--925nm--67 Gigaohms0.017 sq.in.3 nA400 to 1100 nmCase 120.18 nF-0.33 mV200 μAPhoto-0.55 A/W-400-1100nmphotodiodeTHT1000-10001----------------------------
VTP3310LAH

SILICON PHOTODIODES

EXCELITAS TECH

4291: ¥6.052-40 to +100 °C------10 Gigaohms0.0011 sq.in.35 nA400 to 1150 nmT-125 pF140 V350 mV36 μAPhoto-0.55 A/W±20 °-----------------------------------
VTS2086H

PHOTO DIODE

EXCELITAS TECH

101: ¥8.976:-40°C085414010:2:925nm:44B:10nA------------------------------------------------
VTS3082H

DIODE, PHOTO, 925NM, SIDE LOOKING Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg

EXCELITAS TECH

10100: ¥87.2318:-40°C0.00585411000:2:925nm:44A:50nA1.2 Megohms0.144 sq.in.0.05 μA400 to 1100 nmCase 44A1.75 nF6 V0.45 V0.69 mAPhoto-0.6 A/W-----RoHS Compliant Part--:Yes---------------------------
VTS3085H
2

DIODE, PHOTO, 925NM, SIDE LOOKING Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2

EXCELITAS TECH

1171: ¥34.34:-40°C0.00290318038:2:925nm:44A:20nA3 Megohms0.032 sq.in.0.02 μA400 to 1100 nmCase 44A0.5 nF6 V0.45 V0.16 mAPhoto-0.6 A/W--------:Yes---------------------------
VTT1115H
2

TRANSISTOR, PHOTO, NPN, TO-46-3 Phototransistor; 100V; 15°; 400-1050nm

EXCELITAS TECH

1951: ¥90.60-0.00200000000:3----------------400-1050nmphototransistorTHT1000-10001:Yes-------------1mA:15°:NPN100V:250mW---------
VT20N2
2

LDR, 500KOHM, 50mW, VT200 SERIES Photoconductive Cell; 34 Kilohms (Typ.); 500 Kilohms (Min.); 0.80 (Typ.)

EXCELITAS TECH

541: ¥86.70:-40°C0.00285331000:2---:500kohm---TO-46----------------:50mW:100V:TO-46-:--------------78 ms (Typ.) @ 1 fc8 ms (Typ.) @ 1 fc0.80 (Typ.)0.178 in. L x 0.140 in. H x 0.209 in. Dia.0.016 in.1 in.75 °C--
VT30N1
2

LDR, 200KOHM, 125mW, VT300 SERIES HERMETIC PHOTOCELL

EXCELITAS TECH

991: ¥63.852:-40°C0.00285411000----:200kohm--------------------:125mW:100V:TO-5-:-:VT300---------------------
VT90N1
2

LDR, 200KOHM, 80MW, VT900 SERIES PINNED PHOTO CELL

EXCELITAS TECH

35121: ¥18.36:-40°C0.00285331000:2---:200kohm--------------------:80mW:100V:---:VT900-------------------:Each:-
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