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fairchild semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Supplier Package | TO-92 |
| Maximum Gate Source Voltage | -40 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | TO-92 |
| Channel Type | N |
| Packaging | Bulk |
| Maximum Power Dissipation | 625 |
| Maximum Drain Gate Voltage | 40 |
| Minimum Operating Temperature | -55 |
| Configuration | Single |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Mounting Type | Through Hole |
| Current - Drain (Idss) @ Vds (Vgs=0) | 15mA @ 20V |
| Resistance - RDS(On) | 50 Ohm |
| Supplier Device Package | TO-92-3 |
| Voltage - Cutoff (VGS off) @ Id | 2V @ 1nA |
| FET Type | N-Channel |
| Power - Max | 625mW |
| Standard Package | 2,000 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Input Capacitance (Ciss) @ Vds | 16pF @ 20V |
| rohs | Lead free / RoHS Compliant |
| Factory Pack Quantity | 2000 |
| Product Category | JFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | - 40 V |
| Unit Weight | 0.007090 oz |
| Rds On | 50 Ohms |
| Power Dissipation | 625 mW |
| Mounting Style | Through Hole |
| Drain-Source Current at Vgs=0 | 15 mA |
| Gate-Source Cutoff Voltage | - 7 V |
| RoHS | RoHS Compliant |
| 不同 Vds 时的输入电容 (Ciss) | 16pF @ 20V |
| FET 类型 | N-Channel |
| 电压 - 击穿 (V(BR)GSS) | 40V |
| 不同 Id 时的电压 - 截止（VGS 关） | 2V @ 1nA |
| 封装/外壳 | TO-226-3, TO-92-3 (TO-226AA) |
| 电阻 - RDS（开） | 50 Ohm |
| 功率 - 最大值 | 625mW |
| 不同 Vds (Vgs=0) 时的电流 - 漏极 (Idss) | 15mA @ 20V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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