所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Maximum Base Emitter Saturation Voltage | 2@2mA@1A |
| Supplier Package | TO-226 |
| Minimum DC Current Gain | 25000@200mA@5V|15000@500mA@5V|400... |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Maximum Collector Emitter Voltage | 50 |
| Maximum Emitter Base Voltage | 12 |
| Packaging | Ammo |
| Maximum Collector Emitter Saturation Voltage | 1@2mA@200mA|1.5@2mA@1A |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60 |
| Maximum Continuous DC Collector Current | 1.2 |
| Minimum Operating Temperature | -55 |
| Type | NPN |
| Pin Count | 3 |
| Maximum Power Dissipation | 1000 |
| Current - Collector (Ic) (Max) | 1.2A |
| Transistor Type | NPN - Darlington |
| Mounting Type | Through Hole |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Standard Package | 2,000 |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | TO-226 |
| Power - Max | 1W |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
| rohs | Lead free / RoHS Compliant |
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