fairchild semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 3TO-226 |
| Configuration | Single |
| Type | NPN |
| Maximum Collector Emitter Voltage | 50 V |
| Peak DC Collector Current | 1.2 A |
| Minimum DC Current Gain | 25000@200mA@5V|15000@500mA@5V|4000@1A@5V |
| Maximum Collector Emitter Saturation Voltage | 1@2mA@200mA|1.5@2mA@1A V |
| Maximum Collector Base Voltage | 60 V |
| Mounting | Through Hole |
| Standard Package | Bulk |
| Current - Collector (Ic) (Max) | 1.2A |
| Transistor Type | NPN - Darlington |
| Mounting Type | Through Hole |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | TO-226 |
| Packaging | Bulk |
| Power - Max | 1W |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
| rohs | Lead free / RoHS Compliant |
| 不同 Ib、Ic 时的 Vce 饱和值（最大值） | 1.5V @ 2mA, 1A |
| 晶体管类型 | NPN - Darlington |
| 不同 Ic、Vce 时的 DC 电流增益 (hFE)（最小值） | 4000 @ 1A, 5V |
| 封装/外壳 | TO-226-3, TO-92-3 Long Body |
| 功率 - 最大值 | 1W |
| 电流 - 集电极 (Ic)（最大值） | 1.2A |
| 电压 - 集射极击穿（最大值） | 50V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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