infineon technologies
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| Type | Description |
|---|---|
| Package | 3TO-220FP |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 650 V |
| Maximum Continuous Drain Current | 7.3 A |
| RDS-on | 600@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 6 ns |
| Typical Rise Time | 3.5 ns |
| Typical Turn-Off Delay Time | 60 ns |
| Typical Fall Time | 7 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Through Hole |
| Standard Package | Rail / Tube |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Through Hole |
| Current - Continuous Drain (Id) @ 25° C | 7.3A (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Drain to Source Voltage (Vdss) | 650V |
| Supplier Device Package | PG-TO220FP |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 32W |
| Package / Case | TO-220-3 Full Pack |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| rohs | Lead free / RoHS Compliant |
| Factory Pack Quantity | 500 |
| Transistor Polarity | N-Channel |
| Continuous Drain Current | 7.3 A |
| Part # Aliases | SP000216305 SPA07N65C3XKSA1 |
| Fall Time | 7 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Tradename | CoolMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| RoHS | RoHS Compliant |
| Gate-Source Breakdown Voltage | +/- 20 V |
| Series | SPA07N65 |
| Rds On | 600 mOhms |
| Power Dissipation | 32 W |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 3.5 ns |
| Drain-Source Breakdown Voltage | 650 V |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.85 mm |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.3 A |
| Length | 10.65 mm |
| Rds On - Drain-Source Resistance | 600 mOhms |
| Height | 16.15 mm |
| Pd - Power Dissipation | 32 W |
| Technology | Si |
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