ON Semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Product Category | MOSFET |
| RoHS | RoHS Compliant |
| Transistor Polarity | P-Channel |
| Drain-Source Breakdown Voltage | - 20 V |
| Gate-Source Breakdown Voltage | +/- 20 V |
| Continuous Drain Current | - 0.4 A |
| Resistance Drain-Source RDS (on) | 0.55 Ohms |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23 |
| Packaging | Reel |
| Fall Time | 6 ns |
| Forward Transconductance gFS (Max / Min) | 0.5 S |
| Minimum Operating Temperature | - 55 C |
| Power Dissipation | 0.225 W |
| Rise Time | 6 ns |
| Factory Pack Quantity | 10000 |
| Typical Turn-Off Delay Time | 18 ns |
| Life | Obsolete |
| Maximum Gate Source Voltage | ±20 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Channel Mode | Enhancement |
| Standard Package Name | SOT-23 |
| Minimum Operating Temperature | -55 |
| Channel Type | P |
| Maximum Drain Source Resistance | 800@10V |
| Maximum Drain Source Voltage | 20 |
| Number of Elements per Chip | 1 |
| Supplier Package | SOT-23 |
| Maximum Power Dissipation | 225 |
| Maximum Continuous Drain Current | 0.4 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| FET Feature | Logic Level Gate |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 400mA (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 200mA, 10V |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Power - Max | 225mW |
| Standard Package | 10,000 |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) @ Vds | 70pF @ 5V |
| Gate Charge (Qg) @ Vgs | 2.18nC @ 10V |
| rohs | Lead free / RoHS Compliant |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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