NTE ELECTRONICS
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Capacitance, Input | 2 pF |
| Current, Collector | 50 mA |
| Current, Collector Cutoff | 0.01 μA |
| Current, Gain | 20 |
| 频率 | 600 MHz |
| 包装类型 | TO-72 |
| 极性 | NPN |
| 功率耗散 | 200 mW |
| Primary Type | Si |
| Temperature, Junction, Maximum | 200 °C |
| Temperature, Junction, Minimum | -65 °C |
| 晶体管极性 | NPN |
| 类型 | Amplifier, Oscillator |
| Voltage, Breakdown, Collector to Base | 30 V |
| Voltage, Breakdown, Collector to Emitter | 45 V |
| Voltage, Breakdown, Emitter to Base | 3 V |
| Voltage, Collector to Base | 45 V |
| Voltage, Collector to Emitter | 45 V |
| Voltage, Collector to Emitter, Saturation | 0.4 V |
| Voltage, Emitter to Base | 3 V |
| Voltage, Saturation, Base to Emitter | 1 V |
| Voltage, Saturation, Collector to Emitter | 0.4 V |
| Amplification | ...20 |
| Collector-emitter voltage | 45 |
| Transit frequency | 600 |
| Collector current | 50 mA |
| Power dissipation | 300 |
| Housing type | TO-72 |
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