厂商型号:

JAN1N5614US

芯天下内部编号:
253-JAN1N5614US
生产厂商:

microsemi

microsemi
描述:
D
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 2A-MELF
Type Switching Diode
Configuration Single
Peak Reverse Repetitive Voltage 200 V
Peak Average Forward Current 1@Ta=55C A
Peak Reverse Recovery Time 2000 ns
Peak Reverse Current 0.5 uA
Peak Forward Voltage 1.3@3A V
Peak Non-Repetitive Surge Current 30 A
Operating Temperature -65 to 200 °C
Mounting Surface Mount
Standard Package Bulk
Packaging *
Current - Reverse Leakage @ Vr 500nA @ 200V
Mounting Type Surface Mount
Voltage - Forward (Vf) (Max) @ If 1.3V @ 3A
Voltage - DC Reverse (Vr) (Max) 200V
Thermal Resistance 38°C/W Jl
Supplier Device Package *
Reverse Recovery Time (trr) 2µs
Operating Temperature - Junction -65°C ~ 200°C
Current - Average Rectified (Io) 1A
Package/Case *
Speed Standard Recovery >500ns, > 200mA (Io)
Other Names 1086-2102
Diode Type Standard
rohs Contains lead / RoHS non-compliant
Package / Case *
Vr - Reverse Voltage 200 V
Product Rectifiers
If - Forward Current 1 A
Ir - Reverse Current 500 nA
Brand Microsemi
Recovery Time 2 us
RoHS No
Minimum Operating Temperature - 65 C
Vf - Forward Voltage 1.3 V
Maximum Operating Temperature + 200 C
Max Surge Current 30 A

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