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Thumbnail J109_D26Z Thumbnail J109_D26Z
厂商型号:

J109_D26Z

芯天下内部编号:
3-J109-D26Z
生产厂商:

fairchild semiconductor

microsemi
描述:
T
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 3TO-92
Configuration Single
Maximum Gate Source Voltage -25 V
Maximum Drain Gate Voltage 25 V
Operating Temperature -55 to 150 °C
Mounting Through Hole
Standard Package Tape & Reel
Product Category JFET
RoHS RoHS Compliant
Transistor Polarity N-Channel
Drain Current (Idss at Vgs=0) 40 mA
Gate-Source Breakdown Voltage - 25 V
Mounting Style Through Hole
Package / Case TO-92-3 Kinked Lead
Packaging Reel
Gate-Source Cutoff Voltage - 6 V
Power Dissipation 625 mW
Resistance Drain-Source RDS (on) 12 Ohms
Series J109
Factory Pack Quantity 2000
Supplier Package TO-92
Maximum Gate Source Voltage -25
EU RoHS Compliant
Maximum Operating Temperature 150
Standard Package Name TO-92
Channel Type N
Maximum Power Dissipation 625
Maximum Drain Gate Voltage 25
Minimum Operating Temperature -55
Pin Count 3
Lead Shape Formed
Voltage - Breakdown (V(BR)GSS) 25V
Mounting Type Through Hole
Current - Drain (Idss) @ Vds (Vgs=0) 40mA @ 15V
Resistance - RDS(On) 12 Ohm
Supplier Device Package TO-92-3
Voltage - Cutoff (VGS off) @ Id 2V @ 10nA
FET Type N-Channel
Power - Max 625mW
rohs Lead free / RoHS Compliant
Unit Weight 0.007090 oz
Rds On 12 Ohms
Drain-Source Current at Vgs=0 40 mA
Other Names J109_D26ZCT
FET 类型 N-Channel
电压 - 击穿 (V(BR)GSS) 25V
不同 Id 时的电压 - 截止(VGS 关) 2V @ 10nA
封装/外壳 TO-226-3, TO-92-3 (TO-226AA) Formed Leads
电阻 - RDS(开) 12 Ohm
功率 - 最大值 625mW
不同 Vds (Vgs=0) 时的电流 - 漏极 (Idss) 40mA @ 15V
Brand Fairchild Semiconductor
Rds On - Drain-Source Resistance 12 Ohms
Pd - Power Dissipation 625 mW
Vgs - Gate-Source Breakdown Voltage - 25 V

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