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厂商型号:

IRFB4321PBF

芯天下内部编号:
176-IRFB4321PBF
生产厂商:

international rectifier

microsemi
描述:
T
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 3TO-220AB
Channel Mode Enhancement
Maximum Drain Source Voltage 150 V
Maximum Continuous Drain Current 85 A
RDS-on 15@10V mOhm
Maximum Gate Source Voltage ±30 V
Typical Turn-On Delay Time 18 ns
Typical Rise Time 60 ns
Typical Turn-Off Delay Time 25 ns
Typical Fall Time 35 ns
Operating Temperature -55 to 175 °C
Mounting Through Hole
Standard Package Rail / Tube
Maximum Gate Source Voltage ±30
EU RoHS Compliant
Maximum Operating Temperature 175
Standard Package Name TO-220
Minimum Operating Temperature -55
Channel Type N
Maximum Drain Source Resistance 15@10V
Maximum Drain Source Voltage 150
Number of Elements per Chip 1
Supplier Package TO-220AB
Maximum Power Dissipation 350000
Maximum Continuous Drain Current 85
Pin Count 3
Lead Shape Through Hole
FET Feature Standard
Packaging Tube
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25° C 85A (Tc)
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 150V
Supplier Device Package TO-220AB
Rds On (Max) @ Id, Vgs 15 mOhm @ 33A, 10V
FET Type MOSFET N-Channel, Metal Oxide
Power - Max 350W
Input Capacitance (Ciss) @ Vds 4460pF @ 50V
Gate Charge (Qg) @ Vgs 110nC @ 10V
Package/Case TO-220-3
rohs Lead free / RoHS Compliant
Category Power MOSFET
Configuration Single
Dimensions 10.66 x 4.82 x 9.02mm
Height 9.02mm
Length 10.66mm
Maximum Drain Source Resistance 0.015 Ω
Maximum Operating Temperature +175 °C
Maximum Power Dissipation 350 W
Minimum Operating Temperature -55 °C
Package Type TO-220AB
Typical Gate Charge @ Vgs 71 nC V @ 10
Typical Input Capacitance @ Vds 4460 pF V @ 25
Width 4.82mm
Factory Pack Quantity 50
Transistor Polarity N-Channel
Gate-Source Breakdown Voltage 30 V
Continuous Drain Current 83 A
Mounting Style Through Hole
Power Dissipation 330 W
Package / Case TO-220AB
Drain-Source Breakdown Voltage 150 V
RoHS RoHS Compliant
Gate Charge Qg 71 nC
Drain Current (Max) 85 A
Frequency (Max) Not Required MHz
Gate-Source Voltage (Max) �30 V
Output Power (Max) Not Required W
Noise Figure Not Required dB
Drain-Source On-Res 0.015 ohm
Operating Temp Range -55C to 175C
Polarity N
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Drain Efficiency Not Required %
Drain-Source On-Volt 150 V
Power Gain Not Required dB
Rad Hardened No
DELETED Compliant
Continuous Drain Current Id :83A
Drain Source Voltage Vds :150V
On Resistance Rds(on) :15mohm
Rds(on) Test Voltage Vgs :10V
Threshold Voltage Vgs :5V
Power Dissipation Pd :330W
Operating Temperature Min :-55°C
Operating Temperature Max :175°C
Transistor Case Style :TO-220AB
No. of Pins :3
MSL :-
SVHC :No SVHC (20-Jun-2013)
Base Number :4321
Current Id Max :83A
N-channel Gate Charge :71nC
Operating Temperature Range :-55°C to +175°C
Pulse Current Idm :330A
Termination Type :Through Hole
Voltage Vds Typ :150V
Voltage Vgs Max :5V
Voltage Vgs Rds on Measurement :10V
Voltage Vgs th Max :5V
Voltage Vgs th Min :3V
Weight (kg) 0.0005
Tariff No. 85412900
Case TO220AB
Gate charge 71nC
Transistor kind HEXFET
Transistor type N-MOSFET
Power 330W
Drain-source voltage 150V
Polarisation unipolar
Drain current 83A
Multiplicity 1
Gross weight 2.8 g
gate-source voltage 30V
On-state resistance 15mΩ
Collective package [pcs] 100
Junction-to-case thermal resistance 450mK/W
spg 100

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