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| Type | Description |
|---|---|
| Package | 3TO-220AB |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 150 V |
| Maximum Continuous Drain Current | 85 A |
| RDS-on | 15@10V mOhm |
| Maximum Gate Source Voltage | ±30 V |
| Typical Turn-On Delay Time | 18 ns |
| Typical Rise Time | 60 ns |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Fall Time | 35 ns |
| Operating Temperature | -55 to 175 °C |
| Mounting | Through Hole |
| Standard Package | Rail / Tube |
| Maximum Gate Source Voltage | ±30 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 175 |
| Standard Package Name | TO-220 |
| Minimum Operating Temperature | -55 |
| Channel Type | N |
| Maximum Drain Source Resistance | 15@10V |
| Maximum Drain Source Voltage | 150 |
| Number of Elements per Chip | 1 |
| Supplier Package | TO-220AB |
| Maximum Power Dissipation | 350000 |
| Maximum Continuous Drain Current | 85 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Through Hole |
| Current - Continuous Drain (Id) @ 25° C | 85A (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain to Source Voltage (Vdss) | 150V |
| Supplier Device Package | TO-220AB |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 350W |
| Input Capacitance (Ciss) @ Vds | 4460pF @ 50V |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package/Case | TO-220-3 |
| rohs | Lead free / RoHS Compliant |
| Category | Power MOSFET |
| Configuration | Single |
| Dimensions | 10.66 x 4.82 x 9.02mm |
| Height | 9.02mm |
| Length | 10.66mm |
| Maximum Drain Source Resistance | 0.015 Ω |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 350 W |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Typical Gate Charge @ Vgs | 71 nC V @ 10 |
| Typical Input Capacitance @ Vds | 4460 pF V @ 25 |
| Width | 4.82mm |
| Factory Pack Quantity | 50 |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 30 V |
| Continuous Drain Current | 83 A |
| Mounting Style | Through Hole |
| Power Dissipation | 330 W |
| Package / Case | TO-220AB |
| Drain-Source Breakdown Voltage | 150 V |
| RoHS | RoHS Compliant |
| Gate Charge Qg | 71 nC |
| Drain Current (Max) | 85 A |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | �30 V |
| Output Power (Max) | Not Required W |
| Noise Figure | Not Required dB |
| Drain-Source On-Res | 0.015 ohm |
| Operating Temp Range | -55C to 175C |
| Polarity | N |
| Type | Power MOSFET |
| Number of Elements | 1 |
| Operating Temperature Classification | Military |
| Drain Efficiency | Not Required % |
| Drain-Source On-Volt | 150 V |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| DELETED | Compliant |
| Continuous Drain Current Id | :83A |
| Drain Source Voltage Vds | :150V |
| On Resistance Rds(on) | :15mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :5V |
| Power Dissipation Pd | :330W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-220AB |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Base Number | :4321 |
| Current Id Max | :83A |
| N-channel Gate Charge | :71nC |
| Operating Temperature Range | :-55°C to +175°C |
| Pulse Current Idm | :330A |
| Termination Type | :Through Hole |
| Voltage Vds Typ | :150V |
| Voltage Vgs Max | :5V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :5V |
| Voltage Vgs th Min | :3V |
| Weight (kg) | 0.0005 |
| Tariff No. | 85412900 |
| Case | TO220AB |
| Gate charge | 71nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET |
| Power | 330W |
| Drain-source voltage | 150V |
| Polarisation | unipolar |
| Drain current | 83A |
| Multiplicity | 1 |
| Gross weight | 2.8 g |
| gate-source voltage | 30V |
| On-state resistance | 15mΩ |
| Collective package [pcs] | 100 |
| Junction-to-case thermal resistance | 450mK/W |
| spg | 100 |
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