厂商型号:

IRFB4321GPBF

芯天下内部编号:
176-IRFB4321GPBF
生产厂商:

international rectifier

microsemi
描述:
T
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 3TO-220AB
Channel Mode Enhancement
Maximum Drain Source Voltage 150 V
Maximum Continuous Drain Current 83 A
RDS-on 15@10V mOhm
Maximum Gate Source Voltage ±30 V
Typical Turn-On Delay Time 18 ns
Typical Rise Time 60 ns
Typical Turn-Off Delay Time 25 ns
Typical Fall Time 35 ns
Operating Temperature -55 to 175 °C
Mounting Through Hole
Standard Package Rail / Tube
FET Feature Standard
Packaging Tube
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25° C 83A (Tc)
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 150V
Supplier Device Package TO-220AB
Rds On (Max) @ Id, Vgs 15 mOhm @ 33A, 10V
FET Type MOSFET N-Channel, Metal Oxide
Power - Max 330W
Package / Case TO-220-3
Input Capacitance (Ciss) @ Vds 4460pF @ 25V
Gate Charge (Qg) @ Vgs 110nC @ 10V
rohs Lead free / RoHS Compliant
Factory Pack Quantity 50
Transistor Polarity N-Channel
Gate-Source Breakdown Voltage 30 V
Continuous Drain Current 83 A
Mounting Style Through Hole
Power Dissipation 330 W
Drain-Source Breakdown Voltage 150 V
RoHS RoHS Compliant
Gate Charge Qg 71 nC

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