toshiba
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| Type | Description |
|---|---|
| Package | 3TO-3PN |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 30 A |
| Maximum Gate Emitter Voltage | ±20 V |
| Mounting | Through Hole |
| Standard Package | Rail / Tube |
| Supplier Package | TO-3PN |
| Maximum Gate Emitter Voltage | ±20 |
| Maximum Continuous Collector Current | 30 |
| EU RoHS | Not Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | TO-3PN |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 |
| Maximum Power Dissipation | 170000 |
| Minimum Operating Temperature | -55 |
| Pin Count | 3 |
| Transistor Type | :IGBT |
| DC Collector Current | :30A |
| Collector Emitter Voltage Vces | :2.45V |
| Power Dissipation Pd | :170W |
| Collector Emitter Voltage V(br)ceo | :600V |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-3P |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Ic Continuous a Max | :30A |
| Fall Time Typ | :50ns |
| Junction Temperature Tj Max | :150°C |
| Junction to Case Thermal Resistance A | :0.735°C/W |
| Operating Temperature Range | :-55°C to +150°C |
| Power Dissipation Max | :170W |
| Pulsed Current Icm | :60A |
| Rise Time | :70ns |
| Termination Type | :Through Hole |
| Transistor Polarity | :N Channel |
| Voltage Vces | :600V |
| Weight (kg) | 0.0046 |
| Tariff No. | 85412900 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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