Toshiba
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Supplier Package | TO-3P |
| Maximum Gate Emitter Voltage | ±20 |
| Maximum Continuous Collector Current | 25 |
| EU RoHS | Not Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | TO-3P |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 |
| Maximum Power Dissipation | 200000 |
| Minimum Operating Temperature | -55 |
| Pin Count | 3 |
| DC Collector Current | :25A |
| Collector Emitter Voltage Vces | :2.7V |
| Power Dissipation Pd | :200W |
| Collector Emitter Voltage V(br)ceo | :1.2kV |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-3P |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Ic Continuous a Max | :25A |
| Fall Time Typ | :160ns |
| Operating Temperature Range | :-55°C to +150°C |
| Power Dissipation Max | :200W |
| Pulsed Current Icm | :50A |
| Rise Time | :100ns |
| Termination Type | :Through Hole |
| Transistor Polarity | :N Channel |
| Transistor Type | :IGBT |
| Voltage Vces | :1.2kV |
| Weight (kg) | 0.00975 |
| Tariff No. | 85412900 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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