Fairchild Semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Product Category | IGBT Transistors |
| RoHS | RoHS Compliant |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Maximum Gate Emitter Voltage | +/- 20 V |
| Gate-Emitter Leakage Current | +/- 250 nA |
| Power Dissipation | 167 W |
| Maximum Operating Temperature | + 150 C |
| Package / Case | TO-263AB-3 |
| Packaging | Tube |
| Continuous Collector Current Ic Max | 45 A |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Factory Pack Quantity | 50 |
| Life | Obsolete |
| Supplier Package | TO-263AB |
| Maximum Gate Emitter Voltage | ±20 |
| Maximum Continuous Collector Current | 45 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | D2PAK |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 |
| Maximum Power Dissipation | 167000 |
| Minimum Operating Temperature | -55 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| Gate Charge | 23nC |
| Current - Collector (Ic) (Max) | 45A |
| Mounting Type | Surface Mount |
| Standard Package | 50 |
| Switching Energy | 55µJ (on), 100µJ (off) |
| Td (on/off) @ 25°C | 6ns/40ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Supplier Device Package | TO-263AB |
| Reverse Recovery Time (trr) | 35ns |
| Power - Max | 167W |
| Input Type | Standard |
| Test Condition | 390V, 12A, 10 Ohm, 15V |
| Current - Collector Pulsed (Icm) | 108A |
| rohs | Lead free / RoHS Compliant |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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