diodes, inc
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Supplier Package | SOT-363 |
| Standard Package Name | SOT-26 |
| Minimum DC Current Gain | 30@5mA@5V |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Screening Level | Commercial |
| Minimum Operating Temperature | -55 |
| Package Height | 1(Max) |
| Typical Input Resistor | 10 |
| Maximum Power Dissipation | 200 |
| Packaging | Tape and Reel |
| Maximum Continuous DC Collector Current | 100 |
| Package Width | 1.35(Max) |
| Mounting | Surface Mount |
| PCB | 6 |
| Package Length | 2.2(Max) |
| Typical Resistor Ratio | 1 |
| Configuration | Dual |
| Type | PNP |
| Pin Count | 6 |
| Lead Shape | Gull-wing |
| Unit Pack | 0 |
| MOQ | 1 |
| Current - Collector (Ic) (Max) | 100mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) (Ohms) | 10k |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | SOT-363 |
| Resistor - Emitter Base (R2) (Ohms) | 10k |
| Power - Max | 200mW |
| Standard Package | 3,000 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| rohs | Lead free / RoHS Compliant |
| Other Names | DDA114EU-FDICT |
| Factory Pack Quantity | 3000 |
| Product Category | Transistors Switching - Resistor Biased |
| Transistor Polarity | PNP |
| Typical Input Resistor | 10 KOhms |
| DC Collector/Base Gain hfe Min | 100 |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Emitter- Base Voltage VEBO | - 5 V |
| Power Dissipation | 0.2 W |
| Peak DC Collector Current | 100 mA |
| Mounting Style | SMD/SMT |
| Continuous Collector Current | - 0.1 A |
| RoHS | RoHS Compliant |
| Package Type | SOT-363 |
| DC Current Gain (Min) | 30 |
| Rad Hardened | No |
| Collector-Emitter Voltage | 50 V |
| Operating Temperature Classification | Military |
| DC Current Gain | 30 |
| 频率 - 跃迁 | 250MHz |
| 不同 Ib、Ic 时的 Vce 饱和值（最大值） | 300mV @ 500µA, 10mA |
| 晶体管类型 | 2 PNP - Pre-Biased (Dual) |
| 电阻器 - 基底 (R1) (Ω) | 10k |
| 电流 - 集电极截止（最大值） | 500nA |
| 不同 Ic、Vce 时的 DC 电流增益 (hFE)（最小值） | 30 @ 5mA, 5V |
| 偏置电阻系列 | R1=R2 |
| 电阻器 - 发射极基底 (R2) (Ω) | 10k |
| 功率 - 最大值 | 200mW |
| 电流 - 集电极 (Ic)（最大值） | 100mA |
| 电压 - 集射极击穿（最大值） | 50V |
| Series | DDA114 |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 600 |
| Height | 1 mm |
| Length | 2.2 mm |
| Pd - Power Dissipation | 0.2 W |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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