所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 2SMT |
| Type | Chip |
| Wavelength | 880 nm |
| Maximum Reverse Voltage | 20 V |
| Maximum Light Current | 34 uA |
| Maximum Rise Time Range | 15 to 250 ns |
| Maximum Dark Current | 30 nA |
| Photodiode Material | Si |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | 100 °C |
| Standard Package | Rail / Tube |
| Reverse V/Veco | 20V |
| Matchcode | BP104FAS |
| Photo curr.min. | 25µA |
| Power dissip | 150mW |
| Unit Pack | 1500 |
| Standard Leadtime | 10 weeks |
| MOQ | 3000 |
| Sens.range min | 730nm |
| Rise/Fall time | 20ns |
| Op.temp.max. | 100°C |
| Packaging | TUBE |
| Detection angle | 120° |
| SMD/THT | SMD |
| Sensitive Area | 4.84mm² |
| Op.temp.min. | -40°C |
| Dark current | 2nA |
| Automotive | CERTIFICAT |
| Max.sensivity | 880nm |
| Sens.range max. | 1100nm |
| rohs | RoHS Compliant Part |
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