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| Type | Description |
|---|---|
| FET Feature | Logic Level Gate |
| Packaging | Tube |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 56A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Drain to Source Voltage (Vdss) | 75V |
| Standard Package | 75 |
| Supplier Device Package | D-Pak |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 46A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 140W |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Input Capacitance (Ciss) @ Vds | 3070pF @ 50V |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Drain |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 9 mΩ |
| Maximum Drain Source Voltage | 75 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 140 W |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-252AA |
| Pin Count | 4 |
| Typical Gate Charge @ Vgs | 56 nC V @ 10 |
| Typical Input Capacitance @ Vds | 3070 pF V @ 50 |
| Typical Turn-Off Delay Time | 43 ns |
| Typical Turn-On Delay Time | 16 ns |
| Width | 6.22mm |
| rohs | Compliant |
| Factory Pack Quantity | 75 |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 20 V |
| Continuous Drain Current | 80 A |
| Mounting Style | SMD/SMT |
| Power Dissipation | 140 W |
| Drain-Source Breakdown Voltage | 75 V |
| RoHS | RoHS Compliant |
| Gate Charge Qg | 56 nC |
| Gate-Source Voltage (Max) | �20 V |
| Mounting | Surface Mount |
| Operating Temp Range | -55C to 175C |
| Polarity | N |
| Type | Power MOSFET |
| Number of Elements | 1 |
| Operating Temperature Classification | Military |
| Drain-Source On-Volt | 75 V |
| Rad Hardened | No |
| Continuous Drain Current Id | :56A |
| Drain Source Voltage Vds | :75V |
| On Resistance Rds(on) | :0.00734ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2V |
| Power Dissipation Pd | :140W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-252AA |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Operating Temperature Range | :-55°C to +175°C |
| Weight (kg) | 0.0045 |
| Tariff No. | 85412900 |
| Case | DPAK |
| Transistor type | N-MOSFET |
| Power | 140W |
| Drain-source voltage | 75V |
| Polarisation | unipolar |
| Drain current | 80A |
| Multiplicity | 1 |
| Gross weight | 0.61 g |
| Collective package [pcs] | 30 |
| spg | 30 |
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