所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 4SOT-89 |
| Configuration | Single Dual Source |
| Maximum Drain Source Voltage | 7 V |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Gate Source Voltage | 1 V |
| Maximum Drain Gate Voltage | -5 to 1 V |
| Operating Temperature | -65 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| Supplier Package | SOT-89 |
| Maximum Gate Source Voltage | 1 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Package Width | 2.5 |
| Standard Package Name | SOT-89 |
| Package Height | 1.5 |
| Maximum Power Dissipation | 1000 |
| Maximum Drain Gate Voltage | -5 to 1 |
| Packaging | Tape and Reel |
| Maximum Drain Source Voltage | 7 |
| Tab | Tab |
| Maximum Continuous Drain Current | 300 |
| PCB | 3 |
| Package Length | 4.5 |
| Minimum Operating Temperature | -65 |
| Pin Count | 4 |
| Lead Shape | Flat |
| Transistor Type | pHEMT FET |
| Voltage - Rated | 7V |
| Noise Figure | 0.8dB |
| Supplier Device Package | SOT-89-3 |
| Voltage - Test | 4V |
| Frequency | 900MHz |
| Gain | 17.2dB |
| Package / Case | TO-243AA |
| Current - Test | 135mA |
| Current Rating | 300mA |
| Power - Output | 21.7dBm |
| rohs | Lead free / RoHS Compliant |
| Type | GaAs EpHEMT |
| Factory Pack Quantity | 3000 |
| Drain Source Voltage VDS | 7 V |
| Product Category | Transistors RF JFET |
| RoHS | RoHS Compliant |
| Gate-Source Breakdown Voltage | - 5 V to 1 V |
| Continuous Drain Current | 300 mA |
| Forward Transconductance - Min | 650 mmho |
| Product | RF JFET |
| Power Dissipation | 1 W |
| Mounting Style | SMD/SMT |
| Maximum Operating Temperature | + 150 C |
| P1dB | 23 dBm |
| Vds - Drain-Source Breakdown Voltage | 7 V |
| P1dB - Compression Point | 23 dBm |
| Brand | Broadcom / Avago |
| Id - Continuous Drain Current | 300 mA |
| NF - Noise Figure | 0.85 dB |
| Pd - Power Dissipation | 1 W |
| Operating Frequency | 2 GHz |
| Vgs - Gate-Source Breakdown Voltage | - 5 V to 1 V |
| Technology | GaAs |
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