Integrated Device Technology (IDT)
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Capacitance,Input | 8pF |
| Capacitance,Output | 8pF |
| Current,Input,Leakage | 5μA |
| Current,Operating | 95mA |
| Current,Output,Leakage | 5μA |
| 密度 | 16K |
| 接口 | ParallelBus |
| MemoryType | SRAM |
| 组织 | 2K×8 |
| PackageType | SO-24-2 |
| PowerDissipation | 1W |
| Temperature,Operating | 0to+70°C |
| Time,Access | 35ns |
| Time,AddressHold | 5ns |
| Time,Fall | 5ns |
| Time,Rise | 5ns |
| Voltage,Input,High | 5.5V |
| Voltage,Input,Low | 0.8V |
| Voltage,Output,High | 2.4V |
| Voltage,Output,Low | 0.4V |
| Voltage,Supply | 5V |
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