vishay / siliconix
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 4TO-206AF |
| Configuration | Single |
| Maximum Gate Source Voltage | -35 V |
| Operating Temperature | -55 to 150 °C |
| Mounting | Through Hole |
| Standard Package | Bulk |
| Supplier Package | TO-206AF |
| Maximum Gate Source Voltage | -35 |
| EU RoHS | Not Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | TO-206AF |
| Channel Type | N |
| Maximum Power Dissipation | 300 |
| Maximum Drain Gate Voltage | -35 |
| Minimum Operating Temperature | -55 |
| Pin Count | 4 |
| Unit Pack | 0 |
| MOQ | 1 |
| Packaging | Bulk |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Mounting Type | Through Hole |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Supplier Device Package | TO-206AF (TO-72) |
| Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
| FET Type | N-Channel |
| Power - Max | 300mW |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Input Capacitance (Ciss) @ Vds | 4pF @ 15V |
| rohs | Contains lead / RoHS non-compliant |
| Factory Pack Quantity | 200 |
| Drain Source Voltage VDS | 35 V |
| Product Category | JFET |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | - 35 V |
| Forward Transconductance - Min | 0.0045 S |
| Mounting Style | Through Hole |
| Rds On | 150 Ohms |
| Drain-Source Current at Vgs=0 | 5 mA |
| Gate-Source Cutoff Voltage | - 6 V |
| RoHS | No RoHS Version Available |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -55C |
| Operating Temperature Classification | Military |
| Rad Hardened | No |
| Gate-Source Voltage (Max) | -35 V |
| Package Type | TO-206AF |
| Drain-Gate Voltage (Max) | -35 V |
| DELETED | Not Compliant |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
|
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